DK0417997T3 - Fremgangsmåde til dannelse af en aflejret metalfilm indeholdende aluminium som hovedkomponent ved anvendelse af alkylaluminiumhydrid - Google Patents

Fremgangsmåde til dannelse af en aflejret metalfilm indeholdende aluminium som hovedkomponent ved anvendelse af alkylaluminiumhydrid

Info

Publication number
DK0417997T3
DK0417997T3 DK90309832.5T DK90309832T DK0417997T3 DK 0417997 T3 DK0417997 T3 DK 0417997T3 DK 90309832 T DK90309832 T DK 90309832T DK 0417997 T3 DK0417997 T3 DK 0417997T3
Authority
DK
Denmark
Prior art keywords
forming
metal film
main component
film containing
deposited metal
Prior art date
Application number
DK90309832.5T
Other languages
English (en)
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1233927A external-priority patent/JP2781220B2/ja
Priority claimed from JP1233925A external-priority patent/JP2781219B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of DK0417997T3 publication Critical patent/DK0417997T3/da

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42Silicides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20Deposition of aluminium only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
DK90309832.5T 1989-09-09 1990-09-07 Fremgangsmåde til dannelse af en aflejret metalfilm indeholdende aluminium som hovedkomponent ved anvendelse af alkylaluminiumhydrid DK0417997T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1233927A JP2781220B2 (ja) 1989-09-09 1989-09-09 堆積膜形成法
JP1233925A JP2781219B2 (ja) 1989-09-09 1989-09-09 堆積膜形成法

Publications (1)

Publication Number Publication Date
DK0417997T3 true DK0417997T3 (da) 1995-12-27

Family

ID=26531261

Family Applications (1)

Application Number Title Priority Date Filing Date
DK90309832.5T DK0417997T3 (da) 1989-09-09 1990-09-07 Fremgangsmåde til dannelse af en aflejret metalfilm indeholdende aluminium som hovedkomponent ved anvendelse af alkylaluminiumhydrid

Country Status (10)

Country Link
EP (1) EP0417997B1 (da)
KR (1) KR940011006B1 (da)
AT (1) ATE130636T1 (da)
DE (1) DE69023724T2 (da)
DK (1) DK0417997T3 (da)
ES (1) ES2079445T3 (da)
GR (1) GR3018958T3 (da)
MY (1) MY107426A (da)
PT (1) PT95233B (da)
SG (1) SG43271A1 (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
GB2320129B (en) * 1996-06-24 2001-09-26 United Microelectronics Corp Method of fabricating an aluminium plug for contact with a semiconductor device

Also Published As

Publication number Publication date
MY107426A (en) 1995-12-30
PT95233A (pt) 1991-05-22
KR940011006B1 (ko) 1994-11-22
GR3018958T3 (en) 1996-05-31
EP0417997B1 (en) 1995-11-22
ES2079445T3 (es) 1996-01-16
ATE130636T1 (de) 1995-12-15
PT95233B (pt) 1998-06-30
DE69023724T2 (de) 1996-05-09
EP0417997A1 (en) 1991-03-20
DE69023724D1 (de) 1996-01-04
SG43271A1 (en) 1997-10-17
KR910007076A (ko) 1991-04-30

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