DK0417997T3 - Fremgangsmåde til dannelse af en aflejret metalfilm indeholdende aluminium som hovedkomponent ved anvendelse af alkylaluminiumhydrid - Google Patents
Fremgangsmåde til dannelse af en aflejret metalfilm indeholdende aluminium som hovedkomponent ved anvendelse af alkylaluminiumhydridInfo
- Publication number
- DK0417997T3 DK0417997T3 DK90309832.5T DK90309832T DK0417997T3 DK 0417997 T3 DK0417997 T3 DK 0417997T3 DK 90309832 T DK90309832 T DK 90309832T DK 0417997 T3 DK0417997 T3 DK 0417997T3
- Authority
- DK
- Denmark
- Prior art keywords
- forming
- metal film
- main component
- film containing
- deposited metal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1233927A JP2781220B2 (ja) | 1989-09-09 | 1989-09-09 | 堆積膜形成法 |
| JP1233925A JP2781219B2 (ja) | 1989-09-09 | 1989-09-09 | 堆積膜形成法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK0417997T3 true DK0417997T3 (da) | 1995-12-27 |
Family
ID=26531261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK90309832.5T DK0417997T3 (da) | 1989-09-09 | 1990-09-07 | Fremgangsmåde til dannelse af en aflejret metalfilm indeholdende aluminium som hovedkomponent ved anvendelse af alkylaluminiumhydrid |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP0417997B1 (da) |
| KR (1) | KR940011006B1 (da) |
| AT (1) | ATE130636T1 (da) |
| DE (1) | DE69023724T2 (da) |
| DK (1) | DK0417997T3 (da) |
| ES (1) | ES2079445T3 (da) |
| GR (1) | GR3018958T3 (da) |
| MY (1) | MY107426A (da) |
| PT (1) | PT95233B (da) |
| SG (1) | SG43271A1 (da) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0498580A1 (en) * | 1991-02-04 | 1992-08-12 | Canon Kabushiki Kaisha | Method for depositing a metal film containing aluminium by use of alkylaluminium halide |
| GB2320129B (en) * | 1996-06-24 | 2001-09-26 | United Microelectronics Corp | Method of fabricating an aluminium plug for contact with a semiconductor device |
-
1990
- 1990-09-06 PT PT95233A patent/PT95233B/pt not_active IP Right Cessation
- 1990-09-07 ES ES90309832T patent/ES2079445T3/es not_active Expired - Lifetime
- 1990-09-07 SG SG1996006781A patent/SG43271A1/en unknown
- 1990-09-07 EP EP90309832A patent/EP0417997B1/en not_active Expired - Lifetime
- 1990-09-07 AT AT90309832T patent/ATE130636T1/de not_active IP Right Cessation
- 1990-09-07 DK DK90309832.5T patent/DK0417997T3/da active
- 1990-09-07 DE DE69023724T patent/DE69023724T2/de not_active Expired - Fee Related
- 1990-09-08 MY MYPI90001545A patent/MY107426A/en unknown
- 1990-09-10 KR KR1019900014260A patent/KR940011006B1/ko not_active Expired - Fee Related
-
1996
- 1996-02-14 GR GR960400359T patent/GR3018958T3/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SG43271A1 (en) | 1997-10-17 |
| MY107426A (en) | 1995-12-30 |
| PT95233B (pt) | 1998-06-30 |
| KR940011006B1 (ko) | 1994-11-22 |
| KR910007076A (ko) | 1991-04-30 |
| EP0417997A1 (en) | 1991-03-20 |
| PT95233A (pt) | 1991-05-22 |
| GR3018958T3 (en) | 1996-05-31 |
| DE69023724D1 (de) | 1996-01-04 |
| DE69023724T2 (de) | 1996-05-09 |
| ES2079445T3 (es) | 1996-01-16 |
| EP0417997B1 (en) | 1995-11-22 |
| ATE130636T1 (de) | 1995-12-15 |
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