PT95233A - Processo de producao de uma pelicula metalica depositada contendo aluminio - Google Patents

Processo de producao de uma pelicula metalica depositada contendo aluminio

Info

Publication number
PT95233A
PT95233A PT95233A PT9523390A PT95233A PT 95233 A PT95233 A PT 95233A PT 95233 A PT95233 A PT 95233A PT 9523390 A PT9523390 A PT 9523390A PT 95233 A PT95233 A PT 95233A
Authority
PT
Portugal
Prior art keywords
metal film
production process
film containing
containing aluminum
deposited metal
Prior art date
Application number
PT95233A
Other languages
English (en)
Other versions
PT95233B (pt
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1233925A external-priority patent/JP2781219B2/ja
Priority claimed from JP1233927A external-priority patent/JP2781220B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of PT95233A publication Critical patent/PT95233A/pt
Publication of PT95233B publication Critical patent/PT95233B/pt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42Silicides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20Deposition of aluminium only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
PT95233A 1989-09-09 1990-09-06 Processo de producao de uma pelicula metalica depositada contendo aluminio PT95233B (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1233925A JP2781219B2 (ja) 1989-09-09 1989-09-09 堆積膜形成法
JP1233927A JP2781220B2 (ja) 1989-09-09 1989-09-09 堆積膜形成法

Publications (2)

Publication Number Publication Date
PT95233A true PT95233A (pt) 1991-05-22
PT95233B PT95233B (pt) 1998-06-30

Family

ID=26531261

Family Applications (1)

Application Number Title Priority Date Filing Date
PT95233A PT95233B (pt) 1989-09-09 1990-09-06 Processo de producao de uma pelicula metalica depositada contendo aluminio

Country Status (10)

Country Link
EP (1) EP0417997B1 (pt)
KR (1) KR940011006B1 (pt)
AT (1) ATE130636T1 (pt)
DE (1) DE69023724T2 (pt)
DK (1) DK0417997T3 (pt)
ES (1) ES2079445T3 (pt)
GR (1) GR3018958T3 (pt)
MY (1) MY107426A (pt)
PT (1) PT95233B (pt)
SG (1) SG43271A1 (pt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
GB2320129B (en) * 1996-06-24 2001-09-26 United Microelectronics Corp Method of fabricating an aluminium plug for contact with a semiconductor device

Also Published As

Publication number Publication date
ES2079445T3 (es) 1996-01-16
KR910007076A (ko) 1991-04-30
KR940011006B1 (ko) 1994-11-22
EP0417997B1 (en) 1995-11-22
DE69023724D1 (de) 1996-01-04
DK0417997T3 (da) 1995-12-27
MY107426A (en) 1995-12-30
ATE130636T1 (de) 1995-12-15
PT95233B (pt) 1998-06-30
SG43271A1 (en) 1997-10-17
DE69023724T2 (de) 1996-05-09
EP0417997A1 (en) 1991-03-20
GR3018958T3 (en) 1996-05-31

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Legal Events

Date Code Title Description
BB1A Laying open of patent application

Effective date: 19901228

FG3A Patent granted, date of granting

Effective date: 19980303

MM4A Annulment/lapse due to non-payment of fees, searched and examined patent

Free format text: LAPSE DUE TO NON-PAYMENT OF FEES

Effective date: 20120903

MM4A Annulment/lapse due to non-payment of fees, searched and examined patent

Free format text: MAXIMUM VALIDITY LIMIT REACHED

Effective date: 20130304