ATE130636T1 - Verfahren zur abscheidung von einem aluminium als hauptbestandteil enthaltenden metallischen film mittels eines alkylaluminiumhydrids. - Google Patents

Verfahren zur abscheidung von einem aluminium als hauptbestandteil enthaltenden metallischen film mittels eines alkylaluminiumhydrids.

Info

Publication number
ATE130636T1
ATE130636T1 AT90309832T AT90309832T ATE130636T1 AT E130636 T1 ATE130636 T1 AT E130636T1 AT 90309832 T AT90309832 T AT 90309832T AT 90309832 T AT90309832 T AT 90309832T AT E130636 T1 ATE130636 T1 AT E130636T1
Authority
AT
Austria
Prior art keywords
deposing
main component
film containing
metallic film
aluminum hydride
Prior art date
Application number
AT90309832T
Other languages
English (en)
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1233925A external-priority patent/JP2781219B2/ja
Priority claimed from JP1233927A external-priority patent/JP2781220B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE130636T1 publication Critical patent/ATE130636T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
AT90309832T 1989-09-09 1990-09-07 Verfahren zur abscheidung von einem aluminium als hauptbestandteil enthaltenden metallischen film mittels eines alkylaluminiumhydrids. ATE130636T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1233925A JP2781219B2 (ja) 1989-09-09 1989-09-09 堆積膜形成法
JP1233927A JP2781220B2 (ja) 1989-09-09 1989-09-09 堆積膜形成法

Publications (1)

Publication Number Publication Date
ATE130636T1 true ATE130636T1 (de) 1995-12-15

Family

ID=26531261

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90309832T ATE130636T1 (de) 1989-09-09 1990-09-07 Verfahren zur abscheidung von einem aluminium als hauptbestandteil enthaltenden metallischen film mittels eines alkylaluminiumhydrids.

Country Status (10)

Country Link
EP (1) EP0417997B1 (de)
KR (1) KR940011006B1 (de)
AT (1) ATE130636T1 (de)
DE (1) DE69023724T2 (de)
DK (1) DK0417997T3 (de)
ES (1) ES2079445T3 (de)
GR (1) GR3018958T3 (de)
MY (1) MY107426A (de)
PT (1) PT95233B (de)
SG (1) SG43271A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0498580A1 (de) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Verfahren zur Herstellung einer abgeschiedenen Metallschicht, die Aluminium enthält, mit Anwendung von Alkylaluminiumhalid
GB2320129B (en) * 1996-06-24 2001-09-26 United Microelectronics Corp Method of fabricating an aluminium plug for contact with a semiconductor device

Also Published As

Publication number Publication date
MY107426A (en) 1995-12-30
EP0417997B1 (de) 1995-11-22
DE69023724D1 (de) 1996-01-04
ES2079445T3 (es) 1996-01-16
GR3018958T3 (en) 1996-05-31
KR910007076A (ko) 1991-04-30
DE69023724T2 (de) 1996-05-09
DK0417997T3 (da) 1995-12-27
EP0417997A1 (de) 1991-03-20
PT95233B (pt) 1998-06-30
SG43271A1 (en) 1997-10-17
PT95233A (pt) 1991-05-22
KR940011006B1 (ko) 1994-11-22

Similar Documents

Publication Publication Date Title
DE69024607D1 (de) Verfahren zur Abscheidung von einem Film mittels eines Alkylaluminiumhydrids
SG43924A1 (en) Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride
PT95430A (pt) Processo de producao de uma pelicula de aluminio ou de metal contendo aluminio depositada
EP0448223A3 (en) Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride
DE69026669D1 (de) Verfahren zur Herstellung einer abgeschiedenen Schicht unter Verwendung von Alkylaluminiumhydrid und Verfahren zur Herstellung eines Halbleiterbauelements
DE69501274D1 (de) Verfahren zur Abscheidung einer keramischen Beschichtung aus der Dampfphase unter Verwendung eines wasserdampfhaltigen Trägergases und nicht-Alkoxy-Silan Precursoren
DE69600258D1 (de) Verfahren zur Beschichtung der Oberfläche eines Werkstücks aus Aluminium oder einer Aluminiumlegierung
ATE121461T1 (de) Verfahren und vorrichtung zur abscheidung einer schicht.
ATE167462T1 (de) Silicium- oder siliciumdioxid-substrat mit modifizierter oberfläche und verfahren zu dessen herstellung
DE69023724D1 (de) Verfahren zur Abscheidung von einem Aluminium als Hauptbestandteil enthaltenden metallischen Film mittels eines Alkylaluminiumhydrids.
ES8406982A1 (es) Procedimiento para la preparacion de compuestos de hidruro de silicio o silanos
EP0298155A3 (de) Verfahren zur Herstellung einer schmelzfesten Metallschicht
JP4453793B2 (ja) ホウ素膜の形成方法
JPS5759909A (en) Preparation of highly stereoregular alpha-olefinic polymer
HU896057D0 (en) (15,25,3r,5r)-2-[(3s)]-2-halogen-3-hydroxy-1-alkene-inyl]-3-trialkyl-silyl-oxy-7,7-(2,2-dimethyl-trimethylene-dioxy)-bicyclo(3.3.0) octane derivatives and process for producing them
GB1500971A (en) Electroplating process for chrome
GB781533A (en) Process for the preparation of silicon compounds
ES8203911A1 (es) Procedimiento para preparar una solucion hidrocarbonada de un compuesto de alquilsodio
KR970017960A (ko) 대 표면 영역 실리콘 기판
RU93055559A (ru) Способ получения дисилана
JPS57115407A (en) Preparation of solid catalytic system for olefin polymerization
ATE180021T1 (de) Verfahren zur herstellung von diamantschichten
Nakamatsu et al. Photo-assisted CVD of Epitaxial SiC Films on α-Al2O3 Substrate and Light Irradiation Effects

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee