DK0602278T3 - Bipolar højfrekvenstransistor - Google Patents
Bipolar højfrekvenstransistorInfo
- Publication number
- DK0602278T3 DK0602278T3 DK92121628T DK92121628T DK0602278T3 DK 0602278 T3 DK0602278 T3 DK 0602278T3 DK 92121628 T DK92121628 T DK 92121628T DK 92121628 T DK92121628 T DK 92121628T DK 0602278 T3 DK0602278 T3 DK 0602278T3
- Authority
- DK
- Denmark
- Prior art keywords
- high frequency
- frequency transistor
- bipolar high
- bipolar
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/926—Multiple bond pads having different sizes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP92121628A EP0602278B1 (de) | 1992-12-18 | 1992-12-18 | Bipolarer Hochfrequenztransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK0602278T3 true DK0602278T3 (da) | 1998-09-28 |
Family
ID=8210310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK92121628T DK0602278T3 (da) | 1992-12-18 | 1992-12-18 | Bipolar højfrekvenstransistor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5406114A (ja) |
| EP (1) | EP0602278B1 (ja) |
| JP (1) | JP3708972B2 (ja) |
| DE (1) | DE59209229D1 (ja) |
| DK (1) | DK0602278T3 (ja) |
| ES (1) | ES2113400T3 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5877555A (en) * | 1996-12-20 | 1999-03-02 | Ericsson, Inc. | Direct contact die attach |
| DE19960856A1 (de) * | 1999-12-16 | 2001-06-28 | Harting Kgaa | Steckverbinder |
| US6414371B1 (en) * | 2000-05-30 | 2002-07-02 | International Business Machines Corporation | Process and structure for 50+ gigahertz transistor |
| DE10204403A1 (de) * | 2002-02-04 | 2003-08-21 | Infineon Technologies Ag | Vorrichtung zur Verbindung eines IC-Anschlusses mit einem Bezugspotential |
| KR102168333B1 (ko) * | 2013-05-16 | 2020-10-22 | 내셔날 인스티튜트 오프 에어로스페이스 어소시에이츠 | 방사선 경화 마이크로전자 칩 패키징 기술 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1914442C3 (de) * | 1969-03-21 | 1978-05-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung |
| CA1056513A (en) * | 1975-06-19 | 1979-06-12 | Benjamin J. Sloan (Jr.) | Integrated logic circuit and method of fabrication |
| JPS58152650A (ja) * | 1982-03-05 | 1983-09-10 | 株式会社日立製作所 | ディーゼル電気機関車の通風冷却装置 |
| JPS59152650A (ja) * | 1983-02-21 | 1984-08-31 | Mitsubishi Electric Corp | 半導体装置 |
| EP0439652A1 (de) * | 1990-01-31 | 1991-08-07 | Siemens Aktiengesellschaft | Hochfrequenz-SMD-Transistor mit zwei Emitteranschlüssen |
| JPH04147658A (ja) * | 1990-10-09 | 1992-05-21 | Nec Yamagata Ltd | 半導体装置 |
-
1992
- 1992-12-18 ES ES92121628T patent/ES2113400T3/es not_active Expired - Lifetime
- 1992-12-18 DK DK92121628T patent/DK0602278T3/da active
- 1992-12-18 DE DE59209229T patent/DE59209229D1/de not_active Expired - Lifetime
- 1992-12-18 EP EP92121628A patent/EP0602278B1/de not_active Expired - Lifetime
-
1993
- 1993-12-01 US US08/159,598 patent/US5406114A/en not_active Expired - Lifetime
- 1993-12-10 JP JP34132793A patent/JP3708972B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0602278A1 (de) | 1994-06-22 |
| ES2113400T3 (es) | 1998-05-01 |
| DE59209229D1 (de) | 1998-04-16 |
| JPH06224320A (ja) | 1994-08-12 |
| JP3708972B2 (ja) | 2005-10-19 |
| US5406114A (en) | 1995-04-11 |
| EP0602278B1 (de) | 1998-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69213702D1 (de) | Feldeffekttransistor | |
| DE4394393T1 (de) | Kühlkörper | |
| DE69122748D1 (de) | Hochfrequenzvorrichtung | |
| DE69325673D1 (de) | Feldeffekttransistor | |
| FI931888L (fi) | Kramploesande cykliska fruktopyranossulfiter -och sulfater | |
| DE69127849D1 (de) | Bipolarer Transistor | |
| DE69330542D1 (de) | Halbleitertransistor | |
| FI924534A7 (fi) | Komposter | |
| DE69429127D1 (de) | Heteroübergang-Bipolartransistor | |
| DE69314519D1 (de) | Frequenzsynthetisierer | |
| FI900179A7 (fi) | Transistoripiiri | |
| DE69332184D1 (de) | NPN-Heteroübergang-Bipolartransistor | |
| DE69428407D1 (de) | Rauscharmer bipolarer Transistor | |
| DE69116076D1 (de) | Heterostruktur-Feldeffekttransistor | |
| DE69419331D1 (de) | Dielektrisch isolierter bipolarer Transistor | |
| DE69317945D1 (de) | Hochfrequenz-Halbleiterbauelement | |
| DE69221277D1 (de) | Hochfrequenzmischer | |
| DE69406722D1 (de) | Heteroübergang-Bipolartransistor | |
| DK0602278T3 (da) | Bipolar højfrekvenstransistor | |
| DE69332112D1 (de) | Verbesserter biolarer Transistor | |
| FI901221A7 (fi) | Suurtaajuinen transistorioskillaattori | |
| FI945766L (fi) | Eristimiä | |
| DE59205727D1 (de) | Hochspannungstransistor | |
| DE69230581D1 (de) | Frequenzsynthetisierer | |
| FI94U1 (fi) | Kompostor |