ES2113400T3 - Transformador bipolar de alta frecuencia. - Google Patents

Transformador bipolar de alta frecuencia.

Info

Publication number
ES2113400T3
ES2113400T3 ES92121628T ES92121628T ES2113400T3 ES 2113400 T3 ES2113400 T3 ES 2113400T3 ES 92121628 T ES92121628 T ES 92121628T ES 92121628 T ES92121628 T ES 92121628T ES 2113400 T3 ES2113400 T3 ES 2113400T3
Authority
ES
Spain
Prior art keywords
collector
base
chip
box
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92121628T
Other languages
English (en)
Inventor
Knut Dipl-Ing Brenndorfer
Jakob Dipl-Phys Huber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Application granted granted Critical
Publication of ES2113400T3 publication Critical patent/ES2113400T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

LA INVENCION SE REFIERE A UN TRANSISTOR HF CON UN CHIP (1) SEMICONDUCTOR DOTADO Y ESTRUCTURADO DE FORMA ADECUADA QUE MUESTRA LOS CONTACTADOS (2,3,4) DE BASE, COLECTOR Y EMISOR. ESTANDO DOTADO EL CHIP DE UN SUBSTRATO SI, QUE ESTA RODEADO POR UNA CAJA (8) Y CUYO CONTACTADO ESTA UNIDO CON LAS RESPECTIVAS CONEXIONES (6,7,5) DE BASE, COLECTOR Y EMISOR DE LA CAJA. SE DEBE CONSEGUIR UNA ALTA AMPLIFICACION EN FRECUENCIAS POR ENCIMA DE 1 GHZ. EL CONTACTADO (2,3,4) DE BASE, COLECTOR Y EMISOR ESTA PREVISTO EN LA CARA SUPERIOR DEL CHIP (1) SEMICONDUCTOR. EL CHIP (1) SEMICONDUCTOR ESTA DISPUESTO CON SU CARA INFERIOR SOBRE LA CONEXION (5) EMISORA DE LA CAJA (8), QUE ESTA CONFIGURADA COMO MASA HF. EL CONTACTO (4) EMISOR ESTA UNIDO A DISTANCIA CORTA A LA CONEXION (5) EMISOR DE LA CAJA (8) Y LOS CONTACTOS (2,3) DE BASE Y COLECTOR ESTAN UNIDOS DE FORMA RESPECTIVA A TRAVES AL MENOS DE UN ALAMBRE (9) DE ENLACE CON LAS CORRESPONDIENTES CONEXIONES (6,7) DE BASE Y COLECTOR.
ES92121628T 1992-12-18 1992-12-18 Transformador bipolar de alta frecuencia. Expired - Lifetime ES2113400T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92121628A EP0602278B1 (de) 1992-12-18 1992-12-18 Bipolarer Hochfrequenztransistor

Publications (1)

Publication Number Publication Date
ES2113400T3 true ES2113400T3 (es) 1998-05-01

Family

ID=8210310

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92121628T Expired - Lifetime ES2113400T3 (es) 1992-12-18 1992-12-18 Transformador bipolar de alta frecuencia.

Country Status (6)

Country Link
US (1) US5406114A (es)
EP (1) EP0602278B1 (es)
JP (1) JP3708972B2 (es)
DE (1) DE59209229D1 (es)
DK (1) DK0602278T3 (es)
ES (1) ES2113400T3 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877555A (en) * 1996-12-20 1999-03-02 Ericsson, Inc. Direct contact die attach
DE19960856A1 (de) * 1999-12-16 2001-06-28 Harting Kgaa Steckverbinder
US6414371B1 (en) * 2000-05-30 2002-07-02 International Business Machines Corporation Process and structure for 50+ gigahertz transistor
DE10204403A1 (de) * 2002-02-04 2003-08-21 Infineon Technologies Ag Vorrichtung zur Verbindung eines IC-Anschlusses mit einem Bezugspotential
CA2912594A1 (en) * 2013-05-16 2015-02-19 National Institute Of Aerospace Associates Radiation hardened microelectronic chip packaging technology

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1914442C3 (de) * 1969-03-21 1978-05-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
CA1056513A (en) * 1975-06-19 1979-06-12 Benjamin J. Sloan (Jr.) Integrated logic circuit and method of fabrication
JPS58152650A (ja) * 1982-03-05 1983-09-10 株式会社日立製作所 ディーゼル電気機関車の通風冷却装置
JPS59152650A (ja) * 1983-02-21 1984-08-31 Mitsubishi Electric Corp 半導体装置
EP0439652A1 (de) * 1990-01-31 1991-08-07 Siemens Aktiengesellschaft Hochfrequenz-SMD-Transistor mit zwei Emitteranschlüssen
JPH04147658A (ja) * 1990-10-09 1992-05-21 Nec Yamagata Ltd 半導体装置

Also Published As

Publication number Publication date
US5406114A (en) 1995-04-11
DK0602278T3 (da) 1998-09-28
EP0602278B1 (de) 1998-03-11
DE59209229D1 (de) 1998-04-16
JPH06224320A (ja) 1994-08-12
JP3708972B2 (ja) 2005-10-19
EP0602278A1 (de) 1994-06-22

Similar Documents

Publication Publication Date Title
IT1167341B (it) Procedimento per la fabbricazione di circuiti integrati a semiconduttori con contatti autoallineati e circuiti integrati realizzati con tale procedimento
JPS5713777A (en) Semiconductor device and manufacture thereof
ES474421A1 (es) Un dispositivo semiconductor de alto rendimiento.
EP1410701A4 (en) METHOD FOR PRODUCING A SUPPORT FOR INTEGRATED CIRCUITS
JPS5515299A (en) Large power transistor
GB1547129A (en) Semiconductor device inclucing a thermal fuse
ATE381781T1 (de) Leistungshalbleiter
EP1399953A4 (en) INTEGRATION OF OPTOELECTRONIC COMPONENTS
CA1209716A (en) Semiconductor component and method of manufacture
ES2113400T3 (es) Transformador bipolar de alta frecuencia.
TW333692B (en) The leadframe with pedestal form raised pedestal on a leadframe die mount pad and form an electrical connection between the die mount pad and the semiconductor die.
ES481019A1 (es) Un dispositivo de caja de empalmes perfeccionado.
ES2040718T3 (es) Emisor laser con un laser semiconductor y un resonador externo.
MY104983A (en) Vertical bipolar transistor.
GB1202082A (en) Semiconductor devices
GB1244023A (en) Semiconductor arrangement
KR920003508A (ko) 반도체 디바이스 및 이를 제조하는 방법
JPS5432085A (en) Semiconductor intergrated circuit
CA1264380C (en) SEMICONDUCTOR DEVICE BOX WITH INTEGRATED GROUNDING CONDUCTOR AND SIDEWALL
DE59813600D1 (de) Vertikal igbt mit einer soi-struktur
ATE92211T1 (de) Programmierbarer kontaktfleck.
FR2341198A1 (fr) Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes
IT1258717B (it) Dispositivo a semiconduttore e procedimento per la sua fabbricazione.
GB1284015A (en) Improvements in or relating to transistors
JPS6484772A (en) Semiconductor laser and semiconductor laser light source device

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 602278

Country of ref document: ES