DK1371746T3 - Filmdannelsesfremgangsmåde og filmdannelsesindretning - Google Patents

Filmdannelsesfremgangsmåde og filmdannelsesindretning

Info

Publication number
DK1371746T3
DK1371746T3 DK02710513T DK02710513T DK1371746T3 DK 1371746 T3 DK1371746 T3 DK 1371746T3 DK 02710513 T DK02710513 T DK 02710513T DK 02710513 T DK02710513 T DK 02710513T DK 1371746 T3 DK1371746 T3 DK 1371746T3
Authority
DK
Denmark
Prior art keywords
substrate
film
film forming
target material
deposition
Prior art date
Application number
DK02710513T
Other languages
English (en)
Inventor
Shuji Hahakura
Kazuya Ohmatsu
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of DK1371746T3 publication Critical patent/DK1371746T3/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Magnetic Heads (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Extrusion Moulding Of Plastics Or The Like (AREA)
  • Manufacturing Of Electric Cables (AREA)
DK02710513T 2001-02-08 2002-02-05 Filmdannelsesfremgangsmåde og filmdannelsesindretning DK1371746T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001032280A JP2002235168A (ja) 2001-02-08 2001-02-08 成膜方法および成膜装置

Publications (1)

Publication Number Publication Date
DK1371746T3 true DK1371746T3 (da) 2006-07-31

Family

ID=18896239

Family Applications (1)

Application Number Title Priority Date Filing Date
DK02710513T DK1371746T3 (da) 2001-02-08 2002-02-05 Filmdannelsesfremgangsmåde og filmdannelsesindretning

Country Status (13)

Country Link
US (1) US20040096580A1 (da)
EP (1) EP1371746B1 (da)
JP (1) JP2002235168A (da)
KR (1) KR100819719B1 (da)
CN (1) CN1265016C (da)
AT (1) ATE321154T1 (da)
AU (1) AU2002228436B2 (da)
CA (1) CA2436750C (da)
DE (1) DE60210045T2 (da)
DK (1) DK1371746T3 (da)
ES (1) ES2261642T3 (da)
NZ (1) NZ527521A (da)
WO (1) WO2002063063A1 (da)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006028977B4 (de) * 2006-06-23 2012-04-12 Qimonda Ag Sputterdepositions-Vorrichtung
JP5244725B2 (ja) * 2009-07-21 2013-07-24 株式会社日立ハイテクノロジーズ 成膜装置
EP2810298A1 (en) * 2012-02-03 2014-12-10 Seagate Technology LLC Methods of forming layers
CN106544634B (zh) * 2015-09-17 2019-03-12 宁波江丰电子材料股份有限公司 一种膜层的形成方法、靶材及靶材制作方法
CN107630188A (zh) * 2017-10-31 2018-01-26 安徽富芯微电子有限公司 一种用于提高金属层镀膜均匀性的镀膜机构及其使用方法
EP3728685B1 (en) 2017-12-22 2024-04-17 Institute Of Geological And Nuclear Sciences Limited Ion beam sputtering apparatus and method
CN108165934B (zh) * 2018-01-19 2020-06-16 武汉华美晨曦光电有限责任公司 一种蒸镀设备
CN114250164B (zh) * 2020-09-23 2023-11-17 中国农业大学 一种具有固氮、解磷能力的不动杆菌1502ipr-05及其应用
CN117716061A (zh) * 2021-07-28 2024-03-15 马克斯·普朗克科学促进学会 用于热蒸镀系统的设备和涂布基板前表面上涂层区域的方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736437A (en) * 1980-08-14 1982-02-27 Fuji Photo Film Co Ltd Producing device of magnetic recording medium
JPS6194242A (ja) * 1984-10-16 1986-05-13 Fuji Photo Film Co Ltd 磁気記録媒体の製造方法
JPH0533124A (ja) * 1991-07-26 1993-02-09 Olympus Optical Co Ltd レーザフラツシユ蒸着装置
US5332133A (en) * 1991-11-01 1994-07-26 Nisshin Flour Milling Co., Ltd. Powder supplying apparatus and powder spraying apparatus
JPH06101037A (ja) * 1992-09-22 1994-04-12 Hitachi Ltd イオンビームスパッタ装置
US5650378A (en) * 1992-10-02 1997-07-22 Fujikura Ltd. Method of making polycrystalline thin film and superconducting oxide body
JP2996568B2 (ja) * 1992-10-30 2000-01-11 株式会社フジクラ 多結晶薄膜の製造方法および酸化物超電導導体の製造方法
WO1994020295A1 (en) * 1993-03-12 1994-09-15 Neocera, Inc. Superconducting films on alkaline earth fluoride substrates with multiple buffer layers
JPH06271394A (ja) * 1993-03-19 1994-09-27 Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai レーザ蒸着装置用ターゲット及びこれを用いた酸化物超電導体の製造方法
US5411772A (en) * 1994-01-25 1995-05-02 Rockwell International Corporation Method of laser ablation for uniform thin film deposition
JPH0870144A (ja) * 1994-08-26 1996-03-12 Sumitomo Electric Ind Ltd 超電導部品の作製方法
JPH08144051A (ja) * 1994-11-21 1996-06-04 Matsushita Electric Ind Co Ltd レーザ・アブレーションを用いた薄膜形成法およびレーザ・アブレーション装置
US5624722A (en) * 1995-03-07 1997-04-29 Sumitomo Electric Industries, Ltd. Apparatus and method for depositing films on substrate via on-axis laser ablation
JPH08246134A (ja) * 1995-03-07 1996-09-24 Sumitomo Electric Ind Ltd レーザー蒸着法による薄膜製造方法及び薄膜製造装置
JP3771012B2 (ja) * 1997-09-02 2006-04-26 株式会社フジクラ 酸化物超電導導体
US6090207A (en) * 1998-04-02 2000-07-18 Neocera, Inc. Translational target assembly for thin film deposition system
JP3877903B2 (ja) * 1999-04-28 2007-02-07 株式会社フジクラ 薄膜の形成方法
JP2002266072A (ja) * 2001-03-09 2002-09-18 Sumitomo Electric Ind Ltd 積層膜および成膜方法

Also Published As

Publication number Publication date
KR20030076664A (ko) 2003-09-26
NZ527521A (en) 2006-04-28
ES2261642T3 (es) 2006-11-16
DE60210045D1 (de) 2006-05-11
CN1489638A (zh) 2004-04-14
CA2436750C (en) 2008-12-30
AU2002228436B2 (en) 2007-05-24
EP1371746B1 (en) 2006-03-22
CN1265016C (zh) 2006-07-19
DE60210045T2 (de) 2007-03-29
ATE321154T1 (de) 2006-04-15
JP2002235168A (ja) 2002-08-23
EP1371746A1 (en) 2003-12-17
EP1371746A4 (en) 2004-06-16
KR100819719B1 (ko) 2008-04-07
WO2002063063A1 (fr) 2002-08-15
US20040096580A1 (en) 2004-05-20
CA2436750A1 (en) 2002-08-15

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