EG18056A - Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices - Google Patents

Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices

Info

Publication number: EG18056A
Authority: EG; Egypt
Prior art keywords: fabrication; amorphous silicon; hydrogenated amorphous; silicon alloys; useful
Prior art date: 1986-02-18

Application number

EG77/87A

Other languages

English (en)

Original Assignee

Solarex Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-02-18

Filing date

1987-02-10

Publication date

1991-11-30

1987-02-10 Application filed by Solarex Corp filed Critical Solarex Corp

1991-11-30 Application granted granted Critical

1991-11-30 Publication of EG18056A publication Critical patent/EG18056A/xx

Links

238000004519 manufacturing process Methods 0.000 title abstract 5
229910045601 alloy Inorganic materials 0.000 title abstract 4
239000000956 alloy Substances 0.000 title abstract 4
229910021417 amorphous silicon Inorganic materials 0.000 title abstract 4
239000000463 material Substances 0.000 title abstract 2
239000004065 semiconductor Substances 0.000 title 1
229910052736 halogen Inorganic materials 0.000 abstract 4
125000004429 atom Chemical group 0.000 abstract 3
150000002367 halogens Chemical group 0.000 abstract 3
229910052739 hydrogen Inorganic materials 0.000 abstract 3
239000001257 hydrogen Substances 0.000 abstract 3
125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 3
239000000203 mixture Chemical group 0.000 abstract 3
230000015572 biosynthetic process Effects 0.000 abstract 2
239000002019 doping agent Substances 0.000 abstract 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
229910052787 antimony Inorganic materials 0.000 abstract 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
229910052785 arsenic Inorganic materials 0.000 abstract 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
229910052797 bismuth Inorganic materials 0.000 abstract 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 abstract 1
150000001875 compounds Chemical class 0.000 abstract 1
230000008021 deposition Effects 0.000 abstract 1
125000005843 halogen group Chemical group 0.000 abstract 1
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
- H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Photovoltaic Devices (AREA)
Silicon Compounds (AREA)
Chemical Vapour Deposition (AREA)

EG77/87A 1986-02-18 1987-02-10 Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices EG18056A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US83007386A	1986-02-18	1986-02-18

Publications (1)

Publication Number	Publication Date
EG18056A true EG18056A (en)	1991-11-30

Family

ID=25256250

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EG77/87A EG18056A (en)	1986-02-18	1987-02-10	Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices

Country Status (12)

Country	Link
EP (1)	EP0233613B1 (de)
JP (1)	JPH06103667B2 (de)
KR (1)	KR910001876B1 (de)
CN (1)	CN1024929C (de)
AT (1)	ATE120884T1 (de)
AU (3)	AU604227B2 (de)
CA (1)	CA1332343C (de)
DE (1)	DE3751209T2 (de)
EG (1)	EG18056A (de)
ES (1)	ES2074041T3 (de)
IE (1)	IE870367L (de)
IN (1)	IN168381B (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EG18056A (en) *	1986-02-18	1991-11-30	Solarex Corp	Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
CA2019923C (en) *	1989-06-28	1993-12-14	Kenji Miyachi	Semiconductor film and process for its production
DE3941997C1 (en) *	1989-12-20	1991-01-24	Phototronics Solartechnik Gmbh, 8011 Putzbrunn, De	Prepn. of di-, tri- or tetra-silyl-methane - by reacting aryl-halo-silane with di-, tri- or tetra -halo-methane in presence of reducing metal, and reacting prod. with hydrogen halide
DE3942058A1 (de) *	1989-12-20	1991-06-27	Phototronics Solartechnik Gmbh	Tetrasilylmethan und verfahren zu dessen herstellung
CN1250655C (zh)	1999-03-30	2006-04-12	捷时雅株式会社	涂料组合物
WO2002080244A2 (en) *	2001-02-12	2002-10-10	Asm America, Inc.	Improved process for deposition of semiconductor films
US7186630B2 (en)	2002-08-14	2007-03-06	Asm America, Inc.	Deposition of amorphous silicon-containing films
JP4970267B2 (ja) *	2004-09-14	2012-07-04	アリゾナボードオブリージェンツアボディーコーポレートアクティングオンビハーフオブアリゾナステイトユニバーシティ	珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法
US7312128B2 (en) *	2004-12-01	2007-12-25	Applied Materials, Inc.	Selective epitaxy process with alternating gas supply
KR101014143B1 (ko) *	2005-11-23	2011-02-14	아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인	규소-게르마늄 수소화물 및 그의 제조 및 사용 방법
EP1919264A1 (de)	2006-11-02	2008-05-07	Dow Corning Corporation	Vorrichtung zur Herstellung eines Films durch Abscheidung von einem Plasma
EP1923483A1 (de)	2006-11-02	2008-05-21	Dow Corning Corporation	Abscheidung von amorphen Siliziumschichten durch Elektronzyclotron-Wellenresonanz
EP1918965A1 (de)	2006-11-02	2008-05-07	Dow Corning Corporation	Verfahren und Apparat zur Erzeugung eines Films durch Abscheidung aus einem Plasma
EP1918967B1 (de)	2006-11-02	2013-12-25	Dow Corning Corporation	Verfahren zur Herstellung einer Schicht durch Abscheidung aus einem Plasma
EP1918414A1 (de)	2006-11-02	2008-05-07	Dow Corning Corporation	Verfahren zur Bildung eines Films aus amorphen Materialen mit gradiertem Bandabstand durch Elektronzyklotronresonanz
EP1918966A1 (de) *	2006-11-02	2008-05-07	Dow Corning Corporation	Verfahren zur Herstellung einer Schicht mit gradiertem Bandabstand durch Abscheidung eines amorphen Stoffes aus einem Plasma
KR20100025507A (ko)	2007-03-30	2010-03-09	레브 리뉴어블 에너지 벤쳐스 인코포레이티드	실리콘 테트라할라이드 또는 유기할로실란의 플라즈마를 이용한 유기작용화
KR101501700B1 (ko) *	2007-04-02	2015-03-11	아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인	신규한 할로실릴게르만의 제조 및 사용 방법
NO342873B1 (no)	2008-02-11	2018-08-20	Inst Energiteknik	Halvlederkomponent
CN103628044A (zh) *	2013-11-07	2014-03-12	中山市创科科研技术服务有限公司	一种利用光化学气相沉积制备α_SiH膜的设备
CN109686802A (zh) *	2018-11-09	2019-04-26	惠州凯珑光电有限公司	一种电子元器件和模组的封装工艺
TWI838011B (zh) *	2021-12-23	2024-04-01	法商液態空氣喬治斯克勞帝方法研究開發股份有限公司	Ｖ族元素的新型無機矽基和聚矽基衍生物及其合成方法和使用其沈積之方法
CN115117201B (zh) *	2022-06-24	2024-03-12	英利能源发展有限公司	一种硅片磷或硼掺杂的方法
CN117116769A (zh) *	2023-09-20	2023-11-24	苏州华太电子技术股份有限公司	超级结器件的制造方法及超级结器件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4226897A (en) *	1977-12-05	1980-10-07	Plasma Physics Corporation	Method of forming semiconducting materials and barriers
FR2485810A1 (fr) *	1980-06-24	1981-12-31	Thomson Csf	Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede
JPS59182521A (ja) *	1983-04-01	1984-10-17	Mitsui Toatsu Chem Inc	水素化シリコン薄膜の形成方法
JPS59200248A (ja) *	1983-04-28	1984-11-13	Canon Inc	像形成部材の製造法
DE3429899A1 (de) *	1983-08-16	1985-03-07	Canon K.K., Tokio/Tokyo	Verfahren zur bildung eines abscheidungsfilms
JPS60117712A (ja) *	1983-11-30	1985-06-25	Toshiba Corp	薄膜形成方法
JPS60154521A (ja) *	1984-01-23	1985-08-14	Semiconductor Energy Lab Co Ltd	炭化珪素被膜作製方法
JPH0669029B2 (ja) *	1984-07-25	1994-08-31	工業技術院長	Ｐ型半導体薄膜の形成方法
US4695331A (en) *	1985-05-06	1987-09-22	Chronar Corporation	Hetero-augmentation of semiconductor materials
GB2177119B (en) *	1985-06-26	1989-04-26	Plessey Co Plc	Organometallic chemical vapour deposition
IL79612A0 (en) *	1985-08-09	1986-11-30	American Cyanamid Co	Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources
EG18056A (en) *	1986-02-18	1991-11-30	Solarex Corp	Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US4690830A (en) *	1986-02-18	1987-09-01	Solarex Corporation	Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices

1987
- 1987-02-10 EG EG77/87A patent/EG18056A/xx active
- 1987-02-12 IE IE721419A patent/IE870367L/xx unknown
- 1987-02-13 IN IN123/CAL/87A patent/IN168381B/en unknown
- 1987-02-13 AT AT87102090T patent/ATE120884T1/de active
- 1987-02-13 ES ES87102090T patent/ES2074041T3/es not_active Expired - Lifetime
- 1987-02-13 DE DE3751209T patent/DE3751209T2/de not_active Expired - Fee Related
- 1987-02-13 EP EP87102090A patent/EP0233613B1/de not_active Expired - Lifetime
- 1987-02-16 CA CA000529799A patent/CA1332343C/en not_active Expired - Fee Related
- 1987-02-16 AU AU68839/87A patent/AU604227B2/en not_active Ceased
- 1987-02-17 JP JP62034388A patent/JPH06103667B2/ja not_active Expired - Lifetime
- 1987-02-18 CN CN87100729A patent/CN1024929C/zh not_active Expired - Fee Related
- 1987-02-18 KR KR1019870001347A patent/KR910001876B1/ko not_active Expired
1990
- 1990-09-24 AU AU63080/90A patent/AU640408B2/en not_active Ceased
- 1990-11-30 AU AU67671/90A patent/AU637852B2/en not_active Ceased

Also Published As

Publication number	Publication date
JPS6351680A (ja)	1988-03-04
AU6767190A (en)	1991-03-14
ES2074041T3 (es)	1995-09-01
AU604227B2 (en)	1990-12-13
ATE120884T1 (de)	1995-04-15
AU640408B2 (en)	1993-08-26
JPH06103667B2 (ja)	1994-12-14
EP0233613A2 (de)	1987-08-26
CN1024929C (zh)	1994-06-08
IN168381B (de)	1991-03-23
EP0233613A3 (en)	1990-11-28
DE3751209T2 (de)	1995-08-10
AU6308090A (en)	1990-12-13
KR870008376A (ko)	1987-09-26
KR910001876B1 (ko)	1991-03-28
CA1332343C (en)	1994-10-11
EP0233613B1 (de)	1995-04-05
CN87100729A (zh)	1987-11-25
DE3751209D1 (de)	1995-05-11
IE870367L (en)	1987-08-18
AU637852B2 (en)	1993-06-10
AU6883987A (en)	1987-08-20

Publication	Publication Date	Title
EP0233613A3 (en)	1990-11-28	Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
ATE135849T1 (de)	1996-04-15	Photovoltaisches bauelement mit einer halbleiterschicht aus nichteinkristallinem stoff, welches zumindest zn,se und h in einer menge von 1 bis 4 atom enthält
EP0715344A3 (de)	1996-06-12	Verfahren zur Bildung von Gatteroxyden mit verschiedener Dicke auf einem Halbleitersubstrat
EP0619615A3 (de)	1995-03-15	Arsen-Passivierung für die epitaktische Ablagerung von ternären Chalcogenid-Halbleiterschichten auf Silizium Substraten.
EP0363689A3 (de)	1990-07-18	Herstellung von Halbleiterbauelementen durch selektives epitaxiales Anwachsen und Poly-Si-Beschichten in demselben Apparat
EP0352607A3 (de)	1990-11-14	Substitute für Arsim, Antimon und Phosphin
FR2763425B1 (fr)	2002-01-04	Dispositif a semiconducteurs ayant une grille en silicium polycristallin contenant une impurete de dopage et de l'azote, et procede de fabrication
EP0130311A3 (de)	1987-08-05	Stabile Suspensionen von Bor, Phosphor, Antimon oder Arsen enthaltenden Dotierungsstoffen
TW369420B (en)	1999-09-11	Health support device and method of producing the same
TW269052B (en)	1996-01-21	Process for semiconductor wafer, semiconductor integrated circuit and devices thereof
CA2275298A1 (en)	1999-10-29	Semiconductor component, in particular a solar cell, and process for manufacture of same
EP0311354A3 (de)	1989-09-27	Integrierte Schaltungen mit Isolationszonen
KR970003428A (ko)	1997-01-28	에피탁시 반도체 웨이퍼(epitaxially coated semiconductor wafer)의 제조방법
CA2018976A1 (en)	1990-12-31	Doping procedures for semiconductor devices
JPS55105344A (en)	1980-08-12	Semiconductor device
JPS5457861A (en)	1979-05-10	Manufacture of semiconductor device
JPS5583256A (en)	1980-06-23	Semiconductor integrated circuit
JPS5527612A (en)	1980-02-27	Silicon base
TW289134B (en)	1996-10-21	Method of forming interconnection insulator
JPS57201061A (en)	1982-12-09	Manufacture of thin semiconductor film resistor
MADAN et al.	1985	Narrow band gap amorphous silicon semiconductors(Patent Application)
JPS6445115A (en)	1989-02-17	Manufacture of hydrogen-bonded amorphous silicon carbide film
CA2008946A1 (en)	1990-07-30	Vapor-phase epitaxial growth method
JPS56122174A (en)	1981-09-25	Manufacture of silicon solar battery cell
TW238404B (en)	1995-01-11	Fabrication of twin-well