EP0080567A2 - Source de courant intégrée à semiconducteurs - Google Patents

Source de courant intégrée à semiconducteurs Download PDF

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Publication number
EP0080567A2
EP0080567A2 EP82108273A EP82108273A EP0080567A2 EP 0080567 A2 EP0080567 A2 EP 0080567A2 EP 82108273 A EP82108273 A EP 82108273A EP 82108273 A EP82108273 A EP 82108273A EP 0080567 A2 EP0080567 A2 EP 0080567A2
Authority
EP
European Patent Office
Prior art keywords
current source
current
transistor
circuit
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP82108273A
Other languages
German (de)
English (en)
Other versions
EP0080567B1 (fr
EP0080567A3 (en
Inventor
Hans Ing. Grad. Kriedt
Andreas Dipl.-Ing. Dietze
Josef Dipl.-Ing. Fenk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0080567A2 publication Critical patent/EP0080567A2/fr
Publication of EP0080567A3 publication Critical patent/EP0080567A3/de
Application granted granted Critical
Publication of EP0080567B1 publication Critical patent/EP0080567B1/fr
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage

Definitions

  • the invention relates to an integrated semiconductor circuit having a current source which is designed as a current mirror and has a plurality of current sources which are used to act on a load element and which each have a transistor.
  • Power sources of this type are e.g. in "Philips Technische Rundschau" 32 (1971/72) No. 1, pp. 4-8.
  • the task of such current sources is to deliver a current which is as independent as possible of the voltage applied to the current source. You also want to control the amount of electricity delivered, which e.g. can be done by supplying a reference current.
  • a current mirror composed of npn transistors is combined with a current mirror composed of pnp transistors.
  • FIG. 2 A circuit example for such a current mirror is shown in FIG. 2, while the simple current mirror is shown in FIG.
  • connection -U B there are two supply connections + U B and -U B , one of which, in the example the connection -U B is grounded, that is to say as reference points tial connection is used.
  • Two npn transistors T1 and T2 are connected to their base connections, the collector of transistor T1 also being located at the base of these two transistors T1 and T2. Because of this connection, the transistor T1 acts as a diode and can therefore also be replaced by one if necessary.
  • the emitters of the two npn transistors T1 and T2 are either directly or via a resistor R1 and R2 at the reference potential -U B.
  • the loads L 3 , ... L n and L ' 3 ... L' n indicated in FIG. 2 are supplied by the current source transistors T3, ... T n , whose base potential is identical to the base potential of the npn transistors T1 and T2 or the pnp transistors T1 and T ' 2 .
  • circuit according to FIG. 2 for the power supply of an integrated circuit, which is combined monolithically with the current source, is that the circuit is still functional even at operating voltages UB ⁇ 1.5 V, which is not the case with normal current mirror current sources derived from constant voltage sources is guaranteed.
  • this circuit has a positive temperature coefficient that is favorable for many applications.
  • the object of the invention is now to compensate for the influence of such deviations on the currents emitted by the current source and to improve the independence of the supplied currents from the load on the current source.
  • the input-defined integrated semiconductor circuit is designed in such a way that, according to the invention, a current source as the actual. Value transmitter for a - a control circuit provided in the current source and containing this acting controlling actuator - serves and that as a setpoint generator for this control loop, a further constant current source is provided which is independent of the current source mentioned.
  • a circuit according to the invention is thus designed in such a way that an unloaded current source circuit serves as a setpoint generator for a control circuit which controls a second - loaded - current source.
  • FIG. 3 The embodiment of the invention corresponding to FIG. 1 is shown in FIG. 3 and the embodiment corresponding to FIG. 2 is shown in FIG. 4.
  • a node K lying between the reference current source J oR and a diode lying in the flow direction and provided by the npn transistor T 1R is used to act on the direct input + of the control amplifier OP, which also serves as a comparator is provided.
  • the inverting input of the control amplifier is located at the node K1 between the transistor T1 and the current source J o acting on it . This application is set by the actuator SG.
  • a reference circuit part composed of two mutually complementary current mirrors in the form of a so-called "PTC" system is now also provided as the setpoint generator.
  • This consists of the two npn transistors T 1R , T 2R combined to form an npn current mirror and the two p n p transistors t 1R and t 2R combined to form a pnp current mirror, which can be seen in the manner already shown in FIG -to each other and to the two.
  • Supply connections + U B and -U B are laid.
  • a switching point U R between the npn transistor T 1R connected as a diode and the pnp transistor t 2R not connected as a diode serves to apply the reference input of the control amplifier OP.
  • a resistor R r can be provided between said circuit point U R and the npn transistor T 2R connected as a diode, which will be discussed in more detail below.
  • the other signal input - of the control amplifier OP lies at a circuit point P between the npn transistor T1 connected as a diode and the pnp transistor T2 not connected as a diode, whose emitter-collector path is connected in series with that of the npn transistor T1.
  • a resistor R S corresponding to the resistor R r can be provided between the connection point P of the branch leading to the control amplifier OP and the npn transistor connected as a diode.
  • the starting circuit AS is a circuit part which is designed in a customary manner and which ensures that the required currents can build up in the setpoint generator after the supply voltage U B has been applied.
  • the starting circuit AS can consist of a resistor which forms a direct connection between the base of the npn transistor T 1R and the supply potential + U B.
  • the setpoint current is determined by the ratio of the emitter areas of the two transistors T 1R and T 2R , which is indicated by the labeling.
  • the control amplifier consists of the operational amplifier OP (which, among other things, has the function of the comparator for determining the control deviation) and the actuator acted upon by it. It is designed in a known manner so that a difference between the actual value currents and the setpoint currents (if necessary after converting the difference between the current values into a voltage difference) is output at the input of the control amplifier keys and is implemented so that at the summation point of the actual value current source with the control amplifier output, the actual value current coincides with the setpoint current.
  • the design of the control amplifier is a conventional measure, so that further explanations in this regard are unnecessary.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
EP82108273A 1981-09-16 1982-09-08 Source de courant intégrée à semiconducteurs Expired EP0080567B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3136780 1981-09-16
DE19813136780 DE3136780A1 (de) 1981-09-16 1981-09-16 Integrierte halbleiterschaltung

Publications (3)

Publication Number Publication Date
EP0080567A2 true EP0080567A2 (fr) 1983-06-08
EP0080567A3 EP0080567A3 (en) 1984-04-04
EP0080567B1 EP0080567B1 (fr) 1987-12-02

Family

ID=6141831

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82108273A Expired EP0080567B1 (fr) 1981-09-16 1982-09-08 Source de courant intégrée à semiconducteurs

Country Status (4)

Country Link
US (1) US4965510A (fr)
EP (1) EP0080567B1 (fr)
JP (1) JPS5866130A (fr)
DE (2) DE3136780A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015212412A1 (de) 2015-07-02 2017-01-05 Ifm Electronic Gmbh Elektronisch einstellbarer induktiver Näherungsschalter

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JPS6047505A (ja) * 1983-08-26 1985-03-14 Fuji Electric Corp Res & Dev Ltd 定電流回路
ATE37619T1 (de) * 1984-07-16 1988-10-15 Siemens Ag Integrierte konstantstromquelle.
JPH01152807A (ja) * 1987-12-09 1989-06-15 Nec Corp 電流供給回路
JP2778781B2 (ja) * 1990-01-29 1998-07-23 三菱電機株式会社 閾値電圧生成回路
DE4012847A1 (de) * 1990-04-23 1991-10-31 Philips Patentverwaltung Integrierbare schaltungsanordnung
US5084668A (en) * 1990-06-08 1992-01-28 Motorola, Inc. System for sensing and/or controlling the level of current in a transistor
JPH0470204A (ja) * 1990-07-11 1992-03-05 Sony Corp バイアス電圧発生回路及び演算増幅器
US5224007A (en) * 1990-12-27 1993-06-29 Raytheon Company Current window detection circuit
US5134310A (en) * 1991-01-23 1992-07-28 Ramtron Corporation Current supply circuit for driving high capacitance load in an integrated circuit
US5124632A (en) * 1991-07-01 1992-06-23 Motorola, Inc. Low-voltage precision current generator
US5157322A (en) * 1991-08-13 1992-10-20 National Semiconductor Corporation PNP transistor base drive compensation circuit
US5739681A (en) * 1992-02-07 1998-04-14 Crosspoint Solutions, Inc. Voltage regulator with high gain cascode current mirror
US5336986A (en) * 1992-02-07 1994-08-09 Crosspoint Solutions, Inc. Voltage regulator for field programmable gate arrays
US5519310A (en) * 1993-09-23 1996-05-21 At&T Global Information Solutions Company Voltage-to-current converter without series sensing resistor
DE69516767T2 (de) * 1994-02-14 2000-11-23 Koninklijke Philips Electronics N.V., Eindhoven Referenzschaltung mit kontrollierter temperaturabhängigkeit
US5661395A (en) * 1995-09-28 1997-08-26 International Business Machines Corporation Active, low Vsd, field effect transistor current source
US6624671B2 (en) * 2000-05-04 2003-09-23 Exar Corporation Wide-band replica output current sensing circuit
US7327186B1 (en) * 2005-05-24 2008-02-05 Spansion Llc Fast wide output range CMOS voltage reference
US7863985B1 (en) * 2009-07-29 2011-01-04 Texas Instruments Incorporation High frequency amplifier linearization technique
CN102055333B (zh) * 2009-11-10 2013-07-31 意法半导体研发(深圳)有限公司 电压调节器结构
US8587287B2 (en) * 2010-07-01 2013-11-19 Conexant Systems, Inc. High-bandwidth linear current mirror
JP5897938B2 (ja) * 2012-03-09 2016-04-06 新日本無線株式会社 Ｌｅｄ駆動装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2060504C3 (de) * 1970-12-09 1973-08-30 Itt Ind Gmbh Deutsche Monolithisch integrierbare Schaltungsanordnung zum Ansteuern eines oder mehrerer als stromkonstanthaltende Elemente angeordneter Transistoren
US3906332A (en) * 1972-11-18 1975-09-16 Itt Integrated circuit current supply
NL7307378A (fr) * 1973-05-28 1974-12-02
JPS5359851A (en) * 1976-11-10 1978-05-30 Toshiba Corp Constant current circuit
JPS5463662A (en) * 1977-10-28 1979-05-22 Nec Corp Current supply circuit
US4177416A (en) * 1978-03-09 1979-12-04 Motorola, Inc. Monolithic current supplies having high output impedances
JPS607846B2 (ja) * 1979-11-15 1985-02-27 ソニー株式会社 カレントミラ−回路
DE3146600A1 (de) * 1981-11-25 1983-07-07 Robert Bosch Gmbh, 7000 Stuttgart Ringstromquelle
JPS58101310A (ja) * 1981-12-11 1983-06-16 Toshiba Corp 電流制御回路
US4399399A (en) * 1981-12-21 1983-08-16 Motorola, Inc. Precision current source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015212412A1 (de) 2015-07-02 2017-01-05 Ifm Electronic Gmbh Elektronisch einstellbarer induktiver Näherungsschalter
DE102015212412B4 (de) 2015-07-02 2019-05-29 Ifm Electronic Gmbh Elektronisch einstellbarer induktiver Näherungsschalter

Also Published As

Publication number Publication date
DE3136780A1 (de) 1983-03-31
US4965510A (en) 1990-10-23
EP0080567B1 (fr) 1987-12-02
EP0080567A3 (en) 1984-04-04
DE3277786D1 (en) 1988-01-14
JPS5866130A (ja) 1983-04-20

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