EP0112983A2 - ROM oder PLA FET-Struktur und Herstellungsverfahren - Google Patents

ROM oder PLA FET-Struktur und Herstellungsverfahren Download PDF

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Publication number
EP0112983A2
EP0112983A2 EP83109939A EP83109939A EP0112983A2 EP 0112983 A2 EP0112983 A2 EP 0112983A2 EP 83109939 A EP83109939 A EP 83109939A EP 83109939 A EP83109939 A EP 83109939A EP 0112983 A2 EP0112983 A2 EP 0112983A2
Authority
EP
European Patent Office
Prior art keywords
gate electrode
fet
fet device
source
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP83109939A
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English (en)
French (fr)
Other versions
EP0112983A3 (en
EP0112983B1 (de
Inventor
Al M. Bracco
Arthur R. Edenfeld
Harish N. Kotecha
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of EP0112983A2 publication Critical patent/EP0112983A2/de
Publication of EP0112983A3 publication Critical patent/EP0112983A3/en
Application granted granted Critical
Publication of EP0112983B1 publication Critical patent/EP0112983B1/de
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H10B20/387—Source region or drain region doping programmed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Definitions

  • This invention relates to field effect transistor semiconductor processing and structures.
  • ROM and PLA integrated circuits are widely used in data processing systems.
  • ROM and PLA integrated circuits typically store fixed information in binary form using electronic switching devices.
  • the personalization of binary information is generally carried out by forming electronic devices which are either electrically conductive or electrically nonconductive. Each of these alternate states is established during the device's fabrication.
  • MOSFET metal oxide silicon field effect transistor
  • FET field effect transistor
  • the personalization of the permanently stored binary state of read only memory or PLA FET devices is conventionally carried out by forming thick or thin gate insulator regions using photolithographic masking. For example, in self-aligned recessed oxide polycrystalline silicon gate MOSFET technologies, the thin gate insulator region is defined in the process.
  • This method of read only memory personalization has the disadvantage that it requires a long turnaround time before a particular pattern of binary bits can be embodied in a final read only memory product. As a result, the development times for systems employing conventional FET read only memories is relatively long and engineering changes considerably lengthen the development cycle time for a product.
  • Still another approach to reduce the overall turnaround time for fabricating ROM or PLA products with predefined permanent bit patterns is to use metal interconnection line personalization.
  • the metal interconnection lines which are employed to interconnect the various devices on the integrated circuit chip are established at a later time during the process cycle.
  • a device which is intended to be an electrically conductive device has its gate electrode connected to the word line by means of a metal interconnection line.
  • Those devices which are not designated as conductive devices do not have their gate electrodes so connected, but instead can have their gate electrode shorted to their source.
  • the turnaround time necessary to obtain a finished product employing this method is reduced with respect to the previously described processes, however, since an additional gate electrode contact is required for each storage cell, the cell size increases significantly, thereby reducing the overall density of the ROM or PLA product.
  • EEPROM electrically erasable programmable read only memories
  • the ROM or PLA device personality can be electrically changed over a period of several minutes to hours.
  • An example of EEPROM cells is found in U.S. Patent No. 4 334 292 to Koetcha.
  • the EEPROM cells typically incorporate capacitors and therefore the cell size becomes relatively large, thereby reducing the overall density of the resultant memory product.
  • a further benefit in such device structures is the reduction in hot electron effects as described by Ogura in “Elimination of Hot Electron Gate Current by the Lightly Doped Drain-Source Structure,” IEDM-81, pages 651-654.
  • an initial ion implantation step to form the lightly doped portions of source and drain adjacent to the edges of the gate is proposed, followed by the growth of silicon dioxide sidewalls which will serve as masks to limit the area of subsequent deep ion implantation to regions separated from the gate.
  • LDD lightly doped drain
  • a first object of this invention is to significantly reduce the turnaround time for personalizing a read only memory or programmable logic array and thus reduce the manufacturing cost.
  • Further objects of the invention are to provide a process for making read only memory or programmable logic array FET devices which have a higher breakdown voltage characteristic, a substantially zero channel hot electron effect, and/or a lower gate-to-source/drain diffusion overlap capacitance.
  • a process sequence is disclosed which applies a polycrystalline silicon gate material and then applies a chemical vapor deposition oxide over all surfaces, forming an effective sidewall on each of the polycrystalline silicon gate structures.
  • An ion implantation step is then carried out to implant source and drain diffusion regions whose proximate edges are not aligned with the edges of the polycrystalline silicon gate material itself, due to the masking effect of the sidewall portion of the chemical vapor deposition oxide layer.
  • the chemical vapor deposition oxide sidewall material is selectively removed for those FET device locations where an active FET device is desired to be formed in the operation of personalizing the read only storage or PLA product.
  • the commonly used method to personalize the ROM/PLA array is making the FET device nonconductive by either adjusting the threshold voltage or by shorting the device gate to its source during processing.
  • the techniques used to adjust the device threshold voltage is increasing the gate insulator thickness or ion implantation during fabrication.
  • electron charge injection can be used after fabrication to alter the threshold voltage, as is the case for EEPROMs.
  • a method for making the FET device nonconductive by severing the connection between the device source or drain and the device channel region. In this way, when biases are applied to the device, no source to drain conduction takes place because the channel inversion layer has no electrical conductive path to the source or drain contact.
  • This invention incorporates the cited high performance lightly doped drain-source FET and proposes to make the device nonconductive by selectively masking the drain or source implanted extensions to the device channel. In this manner, the connection between the source or drain and the channel inversion layer is severed.
  • portions of the source and/or drain can be formed remote from the edges of the gate by deep ion implantation to make all of the FET devices in the ROM or PLA array initially nonconductive.
  • the semiconductor wafer can then be stockpiled at this point. Later, when a specific bit pattern is to be embodied in the ROM or PLA chips on the wafer, the process selectively etches out the masking sidewall insulator so that the lightly doped drain-source regions can be ion implanted to selectively form conductive FET devices. For the case where the masking sidewall insulator remains, the device will remain nonconductive.
  • the personality mask When the personality data is available, the personality mask is used to form conductive/nonconductive devices.
  • the subsequent process steps to complete the fabrication are significantly few compared to state-of-the-art techniques of threshold adjustment during processing.
  • the resultant device size is not significantly increased since the added region for the lightly doped ion implant is compensated by a reduced channel length.
  • LDD devices can be used in all the circuitry, the final product can have channel hot electron immunity as well as improved circuit performance.
  • the key process elements start with the definition of the semi-recessed oxide or ROX patterns using a photoresist and then adjusting the field region threshold voltage by ion implanting the field region through windows in the photoresist.
  • the field region is the region surrounding and separate from the active device regions A and B where conductive and nonconductive FET devices will ultimately be formed. No ion implantation is yet conducted in the device regions A and B.
  • the ROX is formed by oxidizing the silicon substrate 2 in the field region.
  • a polysilicon gate structure 6 is patterned. The polysilicon typically forms the gate electrode 6 and also provides for interdevice wiring.
  • a 10 to 500 nm silicon dioxide layer is deposited conformally in a low pressure chemical vapor deposition (CVD) system.
  • the CVD silicon dioxide is next etched out using the directional reactive ion etching (RIE) technique to remove the CVD silicon dioxide leaving a sidewall spacer 14 and 18 all around the edges of the polysilicon gate 6.
  • RIE reactive ion etching
  • the disclosed process forms a read only memory FET device on a semiconductor substrate 2 of P-type conductivity type, having a gate insulator layer 4 deposited on the surface thereof with a polycrystalline silicon gate electrode 6 formed on the surface of the insulator layer 4, having a top surface 8 and first and second opposed sidewall surfaces 10 and 12.
  • Figure 1 shows the step of growing the silicon dioxide masking layer on the polycrystalline silicon gate electrode 6 with a first portion or sidewall spacer 14 thereof covering the first sidewall 10 and having an exposed surface forming a first edge 16, and a second portion or sidewall spacer 18 thereof covering the second sidewall-12 and having an exposed surface forming a second edge 20, to serve as an ion implantation blocking mask.
  • This insulating masking layer is formed using the cited teachings of U.S. Patent No. 4 234 362.
  • Figure 2 shows the second step of ion implanting (15) a source 22 and a drain 24 region of N-type conductivity into the semiconductor substrate 2, the first portion 14 of the masking layer blocking ion implantation into the substrate 2 adjacent to the first sidewall 10 and the second portion 18 of the masking layer blocking ion implantation into the substrate 2 adjacent to the second sidewall 12.
  • the source region 22 has a first terminal edge 26 aligned with the first edge 16 of the silicon dioxide masking layer and separated by a first non-implanted region 28 in the substrate 2 from alignment with the first sidewall 10 of the gate electrode 6 by the thickness of the first portion 14 of the masking layer.
  • the drain region 24 has a first terminal edge 30 aligned with the second edge 20 of the silicon dioxide masking layer and separated by a second non-implanted region 32 in the substrate 2 from alignment with the second sidewall 12 of the gate electrode 6 by the thickness of the second portion 18 of the masking layer, the first and second non-implanted regions 28 and 32 preventing FET action for the devices of Figure 2 at this point in the process.
  • the wafers can now be stock-piled ready to be personalized. When a given personality is required, the personality mask photolithography is carried out as is shown in Figures 3, 4 and 5.
  • Figure 3 shows how personalization takes place with a third step of selectively removing by wet chemical techniques the first and second portions 14 and 18 of the silicon dioxide masking layer from the first and second sidewalls 10 and 12 of the polycrystalline silicon gate electrode 6 of device A, exposing the first and second non-implanted regions 28 and 32 in the substrate 2.
  • Device B is covered with the photoresist 50 and therefore the ion-implant masking sidewall spacers remain intact.
  • Figure 4 and Figure 5 show a fourth step of ion implanting (25) a source extension 34 of N-type conductivity in the first non-implanted region 28 exposed by the selective removal step, extending the source region 22 from the first terminal edge 26 thereof to a second terminal edge 36 aligned with the first sidewall 10 of the gate electrode 6, and ion implanting a drain extension 38 of N-type conductivity in the second non-implanted region 32 exposed by the selective removal step, extending the drain region 24 from the first terminal edge 30 thereof to a second terminal edge 40 aligned with the second sidewall 12 of the gate electrode 6.
  • This is done for selectively enabling FET action for the device A of Figure 5, thereby representing a first stored binary state.
  • the read only memory or programmable logic array FET device can have its binary state selectively programmed at a relatively late stage of its fabrication. Subsequent steps can be carried out for forming ohmic contacts and metal wiring, passivation layer deposition, terminal metals, testing and packaging.

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  • Semiconductor Memories (AREA)
EP83109939A 1982-12-29 1983-10-05 ROM oder PLA FET-Struktur und Herstellungsverfahren Expired EP0112983B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/454,315 US4536944A (en) 1982-12-29 1982-12-29 Method of making ROM/PLA semiconductor device by late stage personalization
US454315 1982-12-29

Publications (3)

Publication Number Publication Date
EP0112983A2 true EP0112983A2 (de) 1984-07-11
EP0112983A3 EP0112983A3 (en) 1984-09-26
EP0112983B1 EP0112983B1 (de) 1987-06-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP83109939A Expired EP0112983B1 (de) 1982-12-29 1983-10-05 ROM oder PLA FET-Struktur und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US4536944A (de)
EP (1) EP0112983B1 (de)
JP (1) JPS59124158A (de)
DE (1) DE3372045D1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213983A3 (en) * 1985-07-29 1987-07-01 Thomson Components-Mostek Corporation Method of late programming a read only memory
EP0335148A3 (de) * 1988-03-28 1990-01-24 STMicroelectronics S.r.l. Verfahren zur Pragrammierung von MOS und CMOS-ROM-Speichern
GB2291255A (en) * 1994-07-12 1996-01-17 Mosel Vitelic Inc ROM coding by implant

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US4683641A (en) * 1983-08-01 1987-08-04 Gte Communication Systems Corp. Method of coding a MOS ROM array
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JP2515715B2 (ja) * 1984-02-24 1996-07-10 株式会社日立製作所 半導体集積回路装置の製造方法
JPH0693494B2 (ja) * 1984-03-16 1994-11-16 株式会社日立製作所 半導体集積回路装置の製造方法
FR2562327B1 (fr) * 1984-03-30 1986-06-20 Commissariat Energie Atomique Procede pour interconnecter les zones actives et/ou les grilles des circuits integres cmos
US4642878A (en) * 1984-08-28 1987-02-17 Kabushiki Kaisha Toshiba Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions
US4658496A (en) * 1984-11-29 1987-04-21 Siemens Aktiengesellschaft Method for manufacturing VLSI MOS-transistor circuits
JPS61156862A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 半導体記憶装置
US4653173A (en) * 1985-03-04 1987-03-31 Signetics Corporation Method of manufacturing an insulated gate field effect device
US4843023A (en) * 1985-09-25 1989-06-27 Hewlett-Packard Company Process for forming lightly-doped-drain (LDD) without extra masking steps
US4745086A (en) * 1985-09-26 1988-05-17 Motorola, Inc. Removable sidewall spacer for lightly doped drain formation using one mask level and differential oxidation
US4722909A (en) * 1985-09-26 1988-02-02 Motorola, Inc. Removable sidewall spacer for lightly doped drain formation using two mask levels
US5257095A (en) * 1985-12-04 1993-10-26 Advanced Micro Devices, Inc. Common geometry high voltage tolerant long channel and high speed short channel field effect transistors
US4701423A (en) * 1985-12-20 1987-10-20 Ncr Corporation Totally self-aligned CMOS process
US4703551A (en) * 1986-01-24 1987-11-03 Ncr Corporation Process for forming LDD MOS/CMOS structures
JPH0828431B2 (ja) * 1986-04-22 1996-03-21 日本電気株式会社 半導体記憶装置
DE3767431D1 (de) * 1986-04-23 1991-02-21 American Telephone & Telegraph Verfahren zur herstellung von halbleiterbauelementen.
US4682404A (en) * 1986-10-23 1987-07-28 Ncr Corporation MOSFET process using implantation through silicon
US4728617A (en) * 1986-11-04 1988-03-01 Intel Corporation Method of fabricating a MOSFET with graded source and drain regions
US4757026A (en) * 1986-11-04 1988-07-12 Intel Corporation Source drain doping technique
US4933994A (en) * 1987-06-11 1990-06-19 General Electric Company Method for fabricating a self-aligned lightly doped drain semiconductor device with silicide
US4753898A (en) * 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit
US5068603A (en) * 1987-10-07 1991-11-26 Xilinx, Inc. Structure and method for producing mask-programmed integrated circuits which are pin compatible substitutes for memory-configured logic arrays
US4907048A (en) * 1987-11-23 1990-03-06 Xerox Corporation Double implanted LDD transistor self-aligned with gate
JPH01276757A (ja) * 1988-04-28 1989-11-07 Fujitsu Ltd 半導体記憶装置の製造方法
US5053848A (en) * 1988-12-16 1991-10-01 Texas Instruments Incorporated Apparatus for providing single event upset resistance for semiconductor devices
IT1239707B (it) * 1990-03-15 1993-11-15 St Microelectrics Srl Processo per la realizzazione di una cella di memoria rom a bassa capacita' di drain
JP3202784B2 (ja) * 1992-04-13 2001-08-27 三菱電機株式会社 マスクｒｏｍ半導体装置およびその製造方法
US5432103A (en) * 1992-06-22 1995-07-11 National Semiconductor Corporation Method of making semiconductor ROM cell programmed using source mask
EP0575688B1 (de) * 1992-06-26 1998-05-27 STMicroelectronics S.r.l. Programmierung von LDD-ROM-Zellen
US5389565A (en) * 1994-01-07 1995-02-14 Zilog, Inc. Method of fabricating high threshold metal oxide silicon read-only-memory transistors
US5488009A (en) * 1994-11-23 1996-01-30 United Microelectronics Corporation Post-titanium nitride mask ROM programming method
KR100186503B1 (ko) * 1996-06-10 1999-04-15 문정환 반도체 소자의 제조 방법
US5981346A (en) * 1999-03-17 1999-11-09 National Semiconductor Corporation Process for forming physical gate length dependent implanted regions using dual polysilicon spacers
US6911695B2 (en) * 2002-09-19 2005-06-28 Intel Corporation Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain
US6803283B1 (en) * 2002-09-30 2004-10-12 Taiwan Semiconductor Manufacturing Co. Ltd. Method to code flashROM using LDD and source/drain implant
US7468299B2 (en) * 2005-08-04 2008-12-23 Macronix International Co., Ltd. Non-volatile memory cells and methods of manufacturing the same

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US4406049A (en) * 1980-12-11 1983-09-27 Rockwell International Corporation Very high density cells comprising a ROM and method of manufacturing same
EP0054102A3 (de) * 1980-12-11 1983-07-27 Rockwell International Corporation ROM-Zellen in sehr dichter Anordnung und Herstellungsverfahren
US4366613A (en) * 1980-12-17 1983-01-04 Ibm Corporation Method of fabricating an MOS dynamic RAM with lightly doped drain
US4380866A (en) * 1981-05-04 1983-04-26 Motorola, Inc. Method of programming ROM by offset masking of selected gates
JPS5830154A (ja) * 1981-08-17 1983-02-22 Toshiba Corp 固定記憶半導体装置およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213983A3 (en) * 1985-07-29 1987-07-01 Thomson Components-Mostek Corporation Method of late programming a read only memory
EP0335148A3 (de) * 1988-03-28 1990-01-24 STMicroelectronics S.r.l. Verfahren zur Pragrammierung von MOS und CMOS-ROM-Speichern
GB2291255A (en) * 1994-07-12 1996-01-17 Mosel Vitelic Inc ROM coding by implant

Also Published As

Publication number Publication date
EP0112983A3 (en) 1984-09-26
DE3372045D1 (en) 1987-07-16
JPS59124158A (ja) 1984-07-18
EP0112983B1 (de) 1987-06-10
US4536944A (en) 1985-08-27

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