EP0137123A2 - Solution de décapage contenant du sulfate d'ammonium et procédé pour sa régénération - Google Patents

Solution de décapage contenant du sulfate d'ammonium et procédé pour sa régénération Download PDF

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Publication number
EP0137123A2
EP0137123A2 EP84107605A EP84107605A EP0137123A2 EP 0137123 A2 EP0137123 A2 EP 0137123A2 EP 84107605 A EP84107605 A EP 84107605A EP 84107605 A EP84107605 A EP 84107605A EP 0137123 A2 EP0137123 A2 EP 0137123A2
Authority
EP
European Patent Office
Prior art keywords
etching solution
etching
ammonium sulfate
solution
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP84107605A
Other languages
German (de)
English (en)
Other versions
EP0137123A3 (en
EP0137123B1 (fr
Inventor
Leander Fürst
Walter Holzer
Bertel Prof. Dr. Kastening
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elo Chem Atztechnik GmbH
Forschungszentrum Juelich GmbH
Original Assignee
Elo Chem Atztechnik GmbH
Forschungszentrum Juelich GmbH
Kernforschungsanlage Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elo Chem Atztechnik GmbH, Forschungszentrum Juelich GmbH, Kernforschungsanlage Juelich GmbH filed Critical Elo Chem Atztechnik GmbH
Publication of EP0137123A2 publication Critical patent/EP0137123A2/fr
Publication of EP0137123A3 publication Critical patent/EP0137123A3/de
Application granted granted Critical
Publication of EP0137123B1 publication Critical patent/EP0137123B1/fr
Expired legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/34Alkaline compositions for etching copper or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/46Regeneration of etching compositions

Definitions

  • the invention relates to an ammoniacal etching solution specified in the preamble of claim 1 and to a regeneration process of the; Art.
  • Alkaline etchants such as ammoniacal copper tetrammine salt solutions, are used for etching metallic objects, in particular for the production of printed circuit boards, which are also known under the name “printed circuits”, especially when the printed circuit boards to be etched are metal parts that are not resistant to acidic etching media, for example made of lead, tin or nickel.
  • a re-oxidation of the alkaline etching solution after etching off the metal is carried out with the addition of ammonia gas and / or ammonium salt in the presence of oxygen or air.
  • the object of the invention is to provide an ammoniacal etching solution in which, without the addition of suspended catalyst particles, the regeneration of the etching solution is accelerated as well as the deposition - etched copper in an electrolysis cell is made possible with extensive oxygen development at the anode, whereby the electrolyte is degraded and one C hlorinal to be substantially avoided.
  • An etching solution having the chlorine ion concentration specified in claim 2 is preferably used.
  • a solution of 150 g of ammonium sulfate and 50 g of copper per liter was adjusted to a pH of 9.5 by adding gaseous ammonia.
  • the solution was gassed with air for oxidation.
  • the potential the solution was measured at room temperature using a platinum pen against a mercury / mercury oxide reference electrode.
  • etching solutions containing ammonium sulfate the invention is also applicable to etching solutions which, like the aforementioned etching solution, contain oxygen-containing anions, such as, for example, etching solutions containing ammonium nitrate or ammonium carbonate.
  • Another embodiment shows that the addition of chlorine ions also increases the etching rate that can be achieved with the etching solution.
  • copper-coated circuit boards were etched at a temperature of 40 ° C. using an etching solution of 150 g per liter of ammonium sulfate and 80 g per liter of copper in the form of copper tetramine sulfate, which was adjusted to a pH of 9.2 by gassing with ammonia.
  • the mean etching rate achieved with this starting solution was 7.8 ⁇ m per minute.
  • ammonium chloride an additional 0.2% by weight of chlorine ions were dissolved in the etching solution. With this etching solution, the etching speed could be increased to 11.7 ⁇ m per minute.
  • a further increase in the chlorine ion concentration by adding ammonium chloride to a total of 0.4% by weight increases the etching rate only slightly. The etching rate at this concentration was 12.3 ⁇ m per minute.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
EP84107605A 1983-07-07 1984-06-30 Solution de décapage contenant du sulfate d'ammonium et procédé pour sa régénération Expired EP0137123B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3324450 1983-07-07
DE3324450A DE3324450A1 (de) 1983-07-07 1983-07-07 Ammoniumsulfathaltige aetzloesung sowie verfahren zur regeneration der aetzloesung

Publications (3)

Publication Number Publication Date
EP0137123A2 true EP0137123A2 (fr) 1985-04-17
EP0137123A3 EP0137123A3 (en) 1986-05-07
EP0137123B1 EP0137123B1 (fr) 1988-06-01

Family

ID=6203349

Family Applications (1)

Application Number Title Priority Date Filing Date
EP84107605A Expired EP0137123B1 (fr) 1983-07-07 1984-06-30 Solution de décapage contenant du sulfate d'ammonium et procédé pour sa régénération

Country Status (4)

Country Link
US (1) US4564428A (fr)
EP (1) EP0137123B1 (fr)
JP (1) JPH07100875B2 (fr)
DE (2) DE3324450A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3429902A1 (de) * 1984-08-14 1986-02-27 Hans Höllmüller Maschinenbau GmbH & Co, 7033 Herrenberg Verfahren zum aetzen von kupferfilmen auf leiterplatten unter elektrolytischer rueckgewinnung von kupfer aus der aetzloesung
US4784785A (en) * 1987-12-29 1988-11-15 Macdermid, Incorporated Copper etchant compositions
US5248398A (en) * 1990-11-16 1993-09-28 Macdermid, Incorporated Process for direct electrolytic regeneration of chloride-based ammoniacal copper etchant bath
US5085730A (en) * 1990-11-16 1992-02-04 Macdermid, Incorporated Process for regenerating ammoniacal chloride etchants
CN102019430B (zh) * 2009-09-18 2012-09-05 福建师范大学福清分校 一种碱性蚀刻废液回收铜及碱性蚀刻液的回收方法
US11037792B2 (en) * 2018-10-25 2021-06-15 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure etching solution and method for fabricating a semiconductor structure using the same etching solution

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789944A (fr) * 1971-10-12 1973-02-01 Shipley Co Regeneration d'une solution usagee d'attaque du cuivre
DE2216269A1 (de) * 1972-04-05 1973-10-18 Hoellmueller Maschbau H Verfahren zum aetzen von kupfer und kupferlegierungen
CH568225A5 (fr) * 1973-06-22 1975-10-31 Sulzer Ag
US3999564A (en) * 1976-01-09 1976-12-28 Pesek Engineering & Mfg. Co. Continuous etching and etched material recovery system
DE2850564C2 (de) * 1978-11-22 1982-12-23 Kernforschungsanlage Jülich GmbH, 5170 Jülich Verfahren und Vorrichtung zum Regenerieren einer Kupfer(II)-Chlorid und/oder Eisen(III)-Chlorid enthaltenden Ätzlösung in einer Elektrolysezelle
DE2917597A1 (de) * 1979-04-30 1980-11-13 Siemens Ag Verfahren zur regenerierung ammoniakalischer aetzloesungen zum aetzen von metallischem kupfer
JPS5610677A (en) * 1979-07-06 1981-02-03 Tokyo Shibaura Electric Co Refrigerating plant
DE3031567A1 (de) * 1980-08-21 1982-04-29 Elochem Ätztechnik GmbH, 7758 Meersburg Verfahren zum regenerieren einer ammoniakalischen aetzloesung

Also Published As

Publication number Publication date
JPH07100875B2 (ja) 1995-11-01
EP0137123A3 (en) 1986-05-07
EP0137123B1 (fr) 1988-06-01
DE3471693D1 (en) 1988-07-07
US4564428A (en) 1986-01-14
JPS6052600A (ja) 1985-03-25
DE3324450A1 (de) 1985-01-17

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