EP0137123A2 - Solution de décapage contenant du sulfate d'ammonium et procédé pour sa régénération - Google Patents
Solution de décapage contenant du sulfate d'ammonium et procédé pour sa régénération Download PDFInfo
- Publication number
- EP0137123A2 EP0137123A2 EP84107605A EP84107605A EP0137123A2 EP 0137123 A2 EP0137123 A2 EP 0137123A2 EP 84107605 A EP84107605 A EP 84107605A EP 84107605 A EP84107605 A EP 84107605A EP 0137123 A2 EP0137123 A2 EP 0137123A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- etching solution
- etching
- ammonium sulfate
- solution
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
Definitions
- the invention relates to an ammoniacal etching solution specified in the preamble of claim 1 and to a regeneration process of the; Art.
- Alkaline etchants such as ammoniacal copper tetrammine salt solutions, are used for etching metallic objects, in particular for the production of printed circuit boards, which are also known under the name “printed circuits”, especially when the printed circuit boards to be etched are metal parts that are not resistant to acidic etching media, for example made of lead, tin or nickel.
- a re-oxidation of the alkaline etching solution after etching off the metal is carried out with the addition of ammonia gas and / or ammonium salt in the presence of oxygen or air.
- the object of the invention is to provide an ammoniacal etching solution in which, without the addition of suspended catalyst particles, the regeneration of the etching solution is accelerated as well as the deposition - etched copper in an electrolysis cell is made possible with extensive oxygen development at the anode, whereby the electrolyte is degraded and one C hlorinal to be substantially avoided.
- An etching solution having the chlorine ion concentration specified in claim 2 is preferably used.
- a solution of 150 g of ammonium sulfate and 50 g of copper per liter was adjusted to a pH of 9.5 by adding gaseous ammonia.
- the solution was gassed with air for oxidation.
- the potential the solution was measured at room temperature using a platinum pen against a mercury / mercury oxide reference electrode.
- etching solutions containing ammonium sulfate the invention is also applicable to etching solutions which, like the aforementioned etching solution, contain oxygen-containing anions, such as, for example, etching solutions containing ammonium nitrate or ammonium carbonate.
- Another embodiment shows that the addition of chlorine ions also increases the etching rate that can be achieved with the etching solution.
- copper-coated circuit boards were etched at a temperature of 40 ° C. using an etching solution of 150 g per liter of ammonium sulfate and 80 g per liter of copper in the form of copper tetramine sulfate, which was adjusted to a pH of 9.2 by gassing with ammonia.
- the mean etching rate achieved with this starting solution was 7.8 ⁇ m per minute.
- ammonium chloride an additional 0.2% by weight of chlorine ions were dissolved in the etching solution. With this etching solution, the etching speed could be increased to 11.7 ⁇ m per minute.
- a further increase in the chlorine ion concentration by adding ammonium chloride to a total of 0.4% by weight increases the etching rate only slightly. The etching rate at this concentration was 12.3 ⁇ m per minute.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3324450 | 1983-07-07 | ||
| DE3324450A DE3324450A1 (de) | 1983-07-07 | 1983-07-07 | Ammoniumsulfathaltige aetzloesung sowie verfahren zur regeneration der aetzloesung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0137123A2 true EP0137123A2 (fr) | 1985-04-17 |
| EP0137123A3 EP0137123A3 (en) | 1986-05-07 |
| EP0137123B1 EP0137123B1 (fr) | 1988-06-01 |
Family
ID=6203349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP84107605A Expired EP0137123B1 (fr) | 1983-07-07 | 1984-06-30 | Solution de décapage contenant du sulfate d'ammonium et procédé pour sa régénération |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4564428A (fr) |
| EP (1) | EP0137123B1 (fr) |
| JP (1) | JPH07100875B2 (fr) |
| DE (2) | DE3324450A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3429902A1 (de) * | 1984-08-14 | 1986-02-27 | Hans Höllmüller Maschinenbau GmbH & Co, 7033 Herrenberg | Verfahren zum aetzen von kupferfilmen auf leiterplatten unter elektrolytischer rueckgewinnung von kupfer aus der aetzloesung |
| US4784785A (en) * | 1987-12-29 | 1988-11-15 | Macdermid, Incorporated | Copper etchant compositions |
| US5248398A (en) * | 1990-11-16 | 1993-09-28 | Macdermid, Incorporated | Process for direct electrolytic regeneration of chloride-based ammoniacal copper etchant bath |
| US5085730A (en) * | 1990-11-16 | 1992-02-04 | Macdermid, Incorporated | Process for regenerating ammoniacal chloride etchants |
| CN102019430B (zh) * | 2009-09-18 | 2012-09-05 | 福建师范大学福清分校 | 一种碱性蚀刻废液回收铜及碱性蚀刻液的回收方法 |
| US11037792B2 (en) * | 2018-10-25 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure etching solution and method for fabricating a semiconductor structure using the same etching solution |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE789944A (fr) * | 1971-10-12 | 1973-02-01 | Shipley Co | Regeneration d'une solution usagee d'attaque du cuivre |
| DE2216269A1 (de) * | 1972-04-05 | 1973-10-18 | Hoellmueller Maschbau H | Verfahren zum aetzen von kupfer und kupferlegierungen |
| CH568225A5 (fr) * | 1973-06-22 | 1975-10-31 | Sulzer Ag | |
| US3999564A (en) * | 1976-01-09 | 1976-12-28 | Pesek Engineering & Mfg. Co. | Continuous etching and etched material recovery system |
| DE2850564C2 (de) * | 1978-11-22 | 1982-12-23 | Kernforschungsanlage Jülich GmbH, 5170 Jülich | Verfahren und Vorrichtung zum Regenerieren einer Kupfer(II)-Chlorid und/oder Eisen(III)-Chlorid enthaltenden Ätzlösung in einer Elektrolysezelle |
| DE2917597A1 (de) * | 1979-04-30 | 1980-11-13 | Siemens Ag | Verfahren zur regenerierung ammoniakalischer aetzloesungen zum aetzen von metallischem kupfer |
| JPS5610677A (en) * | 1979-07-06 | 1981-02-03 | Tokyo Shibaura Electric Co | Refrigerating plant |
| DE3031567A1 (de) * | 1980-08-21 | 1982-04-29 | Elochem Ätztechnik GmbH, 7758 Meersburg | Verfahren zum regenerieren einer ammoniakalischen aetzloesung |
-
1983
- 1983-07-07 DE DE3324450A patent/DE3324450A1/de not_active Withdrawn
-
1984
- 1984-06-26 US US06/624,585 patent/US4564428A/en not_active Expired - Lifetime
- 1984-06-30 EP EP84107605A patent/EP0137123B1/fr not_active Expired
- 1984-06-30 DE DE8484107605T patent/DE3471693D1/de not_active Expired
- 1984-07-07 JP JP59139788A patent/JPH07100875B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07100875B2 (ja) | 1995-11-01 |
| EP0137123A3 (en) | 1986-05-07 |
| EP0137123B1 (fr) | 1988-06-01 |
| DE3471693D1 (en) | 1988-07-07 |
| US4564428A (en) | 1986-01-14 |
| JPS6052600A (ja) | 1985-03-25 |
| DE3324450A1 (de) | 1985-01-17 |
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