EP0176771A3 - Transistor bipolaire de puissance à tension de claquage variable - Google Patents

Transistor bipolaire de puissance à tension de claquage variable Download PDF

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Publication number
EP0176771A3
EP0176771A3 EP85110888A EP85110888A EP0176771A3 EP 0176771 A3 EP0176771 A3 EP 0176771A3 EP 85110888 A EP85110888 A EP 85110888A EP 85110888 A EP85110888 A EP 85110888A EP 0176771 A3 EP0176771 A3 EP 0176771A3
Authority
EP
European Patent Office
Prior art keywords
breakdown voltage
emitter
zone
conductivity type
power transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP85110888A
Other languages
German (de)
English (en)
Other versions
EP0176771A2 (fr
Inventor
Michael Dr. Dipl.-Phys. Stoisiek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0176771A2 publication Critical patent/EP0176771A2/fr
Publication of EP0176771A3 publication Critical patent/EP0176771A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components

Landscapes

  • Bipolar Transistors (AREA)
EP85110888A 1984-09-28 1985-08-29 Transistor bipolaire de puissance à tension de claquage variable Withdrawn EP0176771A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3435716 1984-09-28
DE3435716 1984-09-28

Publications (2)

Publication Number Publication Date
EP0176771A2 EP0176771A2 (fr) 1986-04-09
EP0176771A3 true EP0176771A3 (fr) 1988-01-13

Family

ID=6246662

Family Applications (1)

Application Number Title Priority Date Filing Date
EP85110888A Withdrawn EP0176771A3 (fr) 1984-09-28 1985-08-29 Transistor bipolaire de puissance à tension de claquage variable

Country Status (2)

Country Link
EP (1) EP0176771A3 (fr)
JP (1) JPS6185866A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0180003A3 (fr) * 1984-09-28 1988-01-13 Siemens Aktiengesellschaft Transistor bipolaire de puissance
US5128742A (en) * 1988-04-14 1992-07-07 Powerex, Inc. Variable gain switch
JP3323514B2 (ja) * 1996-09-06 2002-09-09 三菱電機株式会社 トランジスタおよびその製造方法
DE10205711A1 (de) * 2002-02-12 2003-08-21 Infineon Technologies Ag Verfahren und Vorrichtung zum Erfassen eines Durchbruchs eines Bipolartransistors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243669A (en) * 1962-06-11 1966-03-29 Fairchild Camera Instr Co Surface-potential controlled semiconductor device
US3271640A (en) * 1962-10-11 1966-09-06 Fairchild Camera Instr Co Semiconductor tetrode
FR2153038A1 (fr) * 1971-09-17 1973-04-27 Western Electric Co
EP0180025A2 (fr) * 1984-09-19 1986-05-07 Hitachi, Ltd. Dispositif semi-conducteur comprenant un transistor bipolaire et un MOSFET
EP0180003A2 (fr) * 1984-09-28 1986-05-07 Siemens Aktiengesellschaft Transistor bipolaire de puissance

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3243669A (en) * 1962-06-11 1966-03-29 Fairchild Camera Instr Co Surface-potential controlled semiconductor device
US3271640A (en) * 1962-10-11 1966-09-06 Fairchild Camera Instr Co Semiconductor tetrode
FR2153038A1 (fr) * 1971-09-17 1973-04-27 Western Electric Co
EP0180025A2 (fr) * 1984-09-19 1986-05-07 Hitachi, Ltd. Dispositif semi-conducteur comprenant un transistor bipolaire et un MOSFET
EP0180003A2 (fr) * 1984-09-28 1986-05-07 Siemens Aktiengesellschaft Transistor bipolaire de puissance

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, Band 17, Nr. 4, September 1974, Seite 1041, New York, US; H.M. DALAL et al.: "Gate controlled bistable bipolar transistor" *
IEEE ELECTRON DEVICE LETTERS, Band EDL-4, Nr. 4, April 1983, Seiten 78-80, IEEE, New York, US; C.-Y. WU et al.: "A new high-power voltage-controlled differential negative resistance device - The LAMBDA bipolar power transistor" *

Also Published As

Publication number Publication date
JPS6185866A (ja) 1986-05-01
EP0176771A2 (fr) 1986-04-09

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EP0176771A3 (fr) Transistor bipolaire de puissance à tension de claquage variable

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Inventor name: STOISIEK, MICHAEL, DR. DIPL.-PHYS.