EP0280362B1 - Elément chauffant en couche mince - Google Patents
Elément chauffant en couche mince Download PDFInfo
- Publication number
- EP0280362B1 EP0280362B1 EP88200279A EP88200279A EP0280362B1 EP 0280362 B1 EP0280362 B1 EP 0280362B1 EP 88200279 A EP88200279 A EP 88200279A EP 88200279 A EP88200279 A EP 88200279A EP 0280362 B1 EP0280362 B1 EP 0280362B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- metal oxide
- heating element
- oxide film
- doped
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/20—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by pyrolytic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed with two or more layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
Definitions
- the invention relates to a thin-film heating element, consisting of a temperature-stable, electrically insulating substrate with a thin, electrically conductive, with mutually compensating foreign atoms from at least one element forming an acceptor and at least one element forming a donor-doped metal oxide layer, which is provided with connection electrodes .
- An acceptor represents a local defect in a semiconductor that can accept an electron or, in an equivalent manner, can emit a defect electron.
- the associated electronic energy level lies in the forbidden band, whereby the exact position together with the cross-section for electrons determines the effect of the acceptor.
- the host lattice atom is replaced by an atom that has one valence electron less than the host lattice atom.
- a donor is an impurity in a semiconductor that can donate an electron located at it.
- the associated electronic energy level lies in the forbidden band, whereby the exact position and the cross-section for electrons and defect electrons determine the effect of the donor.
- a host lattice atom is replaced by an atom that has one valence electron more than the host lattice atom.
- glass or ceramic substrates are coated in a pyrolytic process from solutions which contain, for example, the chlorides, bromides, iodides, sulfates, nitrates, oxalates or acetates of tin, indium, cadmium, tin and antimony, tin and indium or tin and cadmium contain no dopant additives such as tin, iron, copper or chrome.
- the layers formed by pyrolytic deposition then consist of the corresponding metal oxide (s).
- thin-film heating elements that reach surface temperatures higher than 500 ° C.
- US Pat. No. 2,564,709 discloses thin, electrically conductive indium oxide layers which are doped with each other in pairs to compensate for foreign atoms composed of at least one acceptor and at least one donor-forming element in an amount of up to 10 atom%. however, the amounts of the acceptor and donor-forming elements each differ by more than 10%.
- This known layer material has proven to be insufficiently stable at higher surface temperatures.
- the invention has for its object to provide a thin-film heating element that is stable up to temperatures of over 600 ° C and high-resistance enough to operate it on mains voltage.
- the metal oxide layer is doped with amounts of the mutually compensating foreign atoms which differ by no more than 10% in an amount of up to 10 atom% each.
- the invention is based on the knowledge that with thin, electrically conductive metal oxide layers on appropriately temperature-stable substrates, surface temperatures of 1000 ° C. at power densities of more than 10 W / cm2, corresponding to current densities of more than 1000 A / cm2 with a low positive temperature coefficient of electrical resistance ⁇ ⁇ 3.10 ⁇ 4 K ⁇ 1 can be achieved if the metal oxide layers are doped with both relatively high and approximately equal amounts of mutually compensating foreign atoms each consisting of at least one element forming acceptors and at least one element forming donors.
- the relatively high doping leads to reduced electron mobility and thus to relatively high resistance values.
- the low positive temperature coefficient of the electrical resistance and its temperature stability of the layers according to the invention is attributed to the pairwise compensation of the elements forming the acceptors and donors.
- SnO2 layers on hard glass, quartz glass or glass ceramic substrates are used as metal oxide layers for the construction of the heating element.
- the metal oxide layers are not to be considered independently of the substrate, in particular the thermal stability, the thermal expansion coefficient of the substrate material and also a possible diffusion of foreign substances from the substrate into the metal oxide layer.
- quartz glasses and glass ceramics with their extremely low expansion coefficients ( ⁇ 0/1000 ⁇ 0.5 or 0.1.10 ⁇ 6 K ⁇ 1) are suitable for a coating with doping SnO2 or In2O3 layers ( ⁇ ⁇ 4.10 ⁇ 6 K ⁇ 1) have been found to be equally suitable substrates, such as hard glasses with an expansion coefficient ⁇ ⁇ 3 to 4.10 ⁇ 6 K ⁇ 1.
- a SnO2 layer is doped with indium, boron and / or aluminum as the acceptor-forming element (s) and with antimony and / or fluorine as the donor-forming element (s).
- the metal oxide layer is doped with at least one acceptor and one donor-forming element in an amount of 3 to 5 atom% each.
- the advantages achieved by the invention are, in particular, that heating elements are created which can be switched on and off abruptly, which due to their low heat capacity have already reached their final temperature after a relatively short period ( ⁇ 4 to 5 minutes), and which have been switched off cool down the power supply just as quickly.
- Another advantage is that the metal oxide layers according to the invention are optically clear, free from streaks, streak-free and crack-free and have a high degree of transparency. These properties of the metal oxide layers according to the invention have a particularly advantageous effect if transparent substrates are used; For example, a bread roaster can be equipped with transparent heating disks, with which the browning of the toasted goods can easily be checked visually.
- the heating elements according to the invention retain unchanged properties in air for several 1000 operating hours and switching cycles. This also applies to large-area heating elements of more than 1dm2.
- Another advantage is that the sheet resistance of the layers according to the invention can be selected such that they can be operated directly from the mains voltage after electrodes, for example metal layer electrodes, have been attached.
- Layers according to the invention were produced from a solution by spray pyrolysis.
- 9.6 g SbCl3 and 9.3 g InCl3 were dissolved as dopants in a solution of 100 ml SnCl4 in 500 ml butyl acetate.
- This addition of dopant corresponds to a doping of 4.5 atom% Sb and 4.5 atom% In.
- SnO2 layers with a density of free charge carriers of N ⁇ 6.1020 / cm3 were made by spraying the above solution as a fine aerosol on about 500 ° C hot substrates with a dimension of 15x15 cm2 from a hard glass, as sprayed commercially under the trademarks Pyrex or Tempax.
- the layers had a layer thickness of 0.1 ⁇ m and, after an annealing process (forming process) in air at a temperature of 600 ° C. over a period of 1 h, a sheet resistance of 160 ⁇ .
- the metal oxide layers produced in the context of the invention have surface resistances of between approximately 20 and 500 ⁇ with layer thicknesses in the range from 0.05 to 0.5 ⁇ m.
- substrates of 15x15 cm2 made of glass ceramic were also coated with SnO2 layers with a thickness of 0.3 ⁇ m. These layers also had a stable sheet resistance of ⁇ 60 ⁇ after a formation process at a temperature of ⁇ 600 ° C for a period of ⁇ 1 h.
- Metal-layer electrodes were also attached to the substrates coated in this way and electrically heated hot plates were built from these heating elements, which were operated at a mains voltage of 220 V with an output of 800 W and a surface temperature of 600 ° C. After 200 turns on and off, the electrical resistance of the layers was unchanged. This heating element was still operational even with an output of 1.1 kW.
- Quartz glass tubes can e.g. use as a heat exchanger in instantaneous water heaters, in coffee machines or in general as a heat exchanger in professional applications.
- While continuous operation of the heating elements up to a recrystallization temperature of around 700 ° C is possible on glass ceramic substrates, operating temperatures of 1000 ° C can be achieved on quartz glass tubes, quartz glass rods or quartz glass plates. For example, a 1 dm2 quartz glass plate with a sheet resistance of R 37 ⁇ was operated at this temperature for a period of 1000 h.
- Heating elements with plate-shaped substrates can be used as heating disks for toasters, heating or hot plates, warming plates, table ovens, irons, as floor heating in heatable thermos jugs or similar devices.
- Heating elements with tubular substrates can be used as heat exchangers for instantaneous heaters, coffee machines, dishwashers, washing machines, tumble dryers, room air heaters, hair dryers or similar devices.
- Heating elements with rod-shaped or tubular substrates can be used, for example, as infrared radiators or radiation ovens.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Claims (13)
- Elément de chauffage à couche mince comportant un substrat stable en température électriquement isolant présentant une couche métallique dopée d'atomes étrangers mutuellement compensés par paires, chacun constitué au moins d'un élément constituant un accepteur et d'un élément constituant un donneur, la couche métallique comportant des électrodes de connexion, caractérisé en ce que la couche en oxyde métallique est dopée tout au plus de 10% de chacun des atomes étrangers qui se compensent mutuellement par paires, les quantités d'atomes présentant une différence maximale de 10%.
- Elément de chauffage selon la revendication 1, caractérisé en ce que la couche en oxyde métallique est une couche de SnO₂.
- Elément de chauffage selon la revendication 2, caractérisé en ce que la couche en oxyde métallique est dopée d'indium, de bore et/ou d'aluminium comme élément(s) formant des accepteurs.
- Elément de chauffage selon la revendication 2, caractérisé en ce que la couche en oxyde métallique est dopée d'antimoine et/ou de fluor comme élément(s) formant des donneurs.
- Elément de chauffage selon la revendication 2, caractérisé en ce que la couche en oxyde métallique est dopée de zinc comme élément formant des accepteurs.
- Elément de chauffage selon la revendication 1, caractérisé en ce que la couche en oxyde métallique est dopée d'un élément formant au moins des accepteurs et des donneurs dans une quantité comprise entre 3 et 5% en atomes.
- Elément de chauffage selon l'une quelconque des revendications précédentes, caractérisé en ce que la couche métallique est fabriquée par pyrolyse d'une solution contenant les éléments indispensables pour la fabrication de ladite couche.
- Elément de chauffage selon au moins l'une quelconque des revendications précédentes, caractérisé en ce que le substrat est constitué de verre dur.
- Elément de chauffage selon au moins l'une quelconque des revendications précédentes, caractérisé en ce que le substrat est constitué de verte de quartz.
- Elément de chauffage selon au moins l'une quelconque des revendications précédentes, caractérisé en ce que le substrat est constitué de céramique de verte.
- Utilisation selon les revendications 1 à 10 de l'élément de chauffage comme élément de chauffage pour grille-pain, plaques de chauffage ou de cuisson, réchauds, fours de table, fers à repasser, ou bouteilles isolantes pouvant être chauffées.
- Utilisation selon les revendications 1 à 10 d'éléments de chauffage tubulaires comme échangeur de chaleur pour chauffe-eau instantanés, cafetières, lave-vaisselle, machines à laver, sèche-linge, dispositifs de chauffage à air chaud ou sèche-cheveux.
- Utilisation selon les revendications 1 à 10 d'éléments de chauffage en forme de tube ou de tige comme radiateurs aux rayons infra-rouge ou comme fours de rayonnement.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873705639 DE3705639A1 (de) | 1987-02-21 | 1987-02-21 | Duennschicht-heizelement |
| DE3705639 | 1987-02-21 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0280362A2 EP0280362A2 (fr) | 1988-08-31 |
| EP0280362A3 EP0280362A3 (en) | 1990-01-31 |
| EP0280362B1 true EP0280362B1 (fr) | 1994-05-04 |
Family
ID=6321510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP88200279A Expired - Lifetime EP0280362B1 (fr) | 1987-02-21 | 1988-02-16 | Elément chauffant en couche mince |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4889974A (fr) |
| EP (1) | EP0280362B1 (fr) |
| JP (1) | JP2616947B2 (fr) |
| DE (2) | DE3705639A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202008008709U1 (de) | 2008-06-28 | 2009-11-19 | Moser, Helmut | Tisch sowie Tischplatte eines Tisches |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2640803B1 (fr) * | 1988-12-15 | 1991-01-04 | Neiman Sa | Resistance en ceramique a haute temperature |
| JPH02220386A (ja) * | 1989-02-21 | 1990-09-03 | Nippon Electric Glass Co Ltd | 遠赤外線ヒーター |
| US5408574A (en) * | 1989-12-01 | 1995-04-18 | Philip Morris Incorporated | Flat ceramic heater having discrete heating zones |
| GB9211331D0 (en) * | 1992-05-28 | 1992-07-15 | Chinacraft Ltd | Hot plate for food |
| JP2961466B2 (ja) * | 1992-08-19 | 1999-10-12 | 株式会社河合楽器製作所 | ヒーター |
| US5468936A (en) * | 1993-03-23 | 1995-11-21 | Philip Morris Incorporated | Heater having a multiple-layer ceramic substrate and method of fabrication |
| US5725912A (en) * | 1993-11-22 | 1998-03-10 | Lin; Pan-Tien | Method of manufacturing an electric heating film of semiconductor |
| EP0654956A1 (fr) * | 1993-11-24 | 1995-05-24 | U'LAMP ENTERPRISES Co., Ltd. | Méthode de fabrication d'une couche chauffée électriquement |
| US5616266A (en) * | 1994-07-29 | 1997-04-01 | Thermal Dynamics U.S.A. Ltd. Co. | Resistance heating element with large area, thin film and method |
| US5577158A (en) * | 1995-07-17 | 1996-11-19 | White Consolidated Industries, Inc. | Capacitive leakage current cancellation for heating panel |
| DE19535068C2 (de) * | 1995-09-21 | 1997-08-21 | Lpkf Cad Cam Systeme Gmbh | Beschichtung zur strukturierten Erzeugung von Leiterbahnen auf der Oberfläche von elektrisch isolierenden Substraten, Verfahren zum Herstellen der Beschichtung und von strukturierten Leiterbahnen |
| US5940579A (en) * | 1997-02-26 | 1999-08-17 | White Consolidated Industries, Inc. | Capacitive leakage current cancellation for heating panel |
| US5932128A (en) * | 1997-02-26 | 1999-08-03 | White Consolidated Industries, Inc. | Switching control system for heating panel with leakage current cancellation |
| US6037572A (en) * | 1997-02-26 | 2000-03-14 | White Consolidated Industries, Inc. | Thin film heating assemblies |
| WO1998051127A1 (fr) | 1997-05-06 | 1998-11-12 | Thermoceramix, L.L.C. | Revetements resistants obtenus par formation d'un depot |
| FR2778304B1 (fr) * | 1998-05-04 | 2000-06-02 | Production De L Aube Soc Ind D | Procede d'apport de chaleur a un objet et conteneur de maintien et de remise en temperature de plats |
| AUPP599598A0 (en) * | 1998-09-18 | 1998-10-08 | Email Limited | Self-regulating nanoscale heating element |
| US6111224A (en) * | 1999-12-02 | 2000-08-29 | Hatco Corporation | Food warming oven with transparent heating shelves |
| US7081602B1 (en) | 2000-02-01 | 2006-07-25 | Trebor International, Inc. | Fail-safe, resistive-film, immersion heater |
| US6663914B2 (en) | 2000-02-01 | 2003-12-16 | Trebor International | Method for adhering a resistive coating to a substrate |
| US6674053B2 (en) | 2001-06-14 | 2004-01-06 | Trebor International | Electrical, thin film termination |
| US6580061B2 (en) * | 2000-02-01 | 2003-06-17 | Trebor International Inc | Durable, non-reactive, resistive-film heater |
| JP2004528677A (ja) | 2000-11-29 | 2004-09-16 | サーモセラミックス インコーポレイテッド | 抵抗加熱器及びその使用法 |
| US6728479B2 (en) * | 2001-06-11 | 2004-04-27 | Aoyagi (H.K.) Ltd. | Panel-type heating element and method for the manufacture thereof |
| DE10258727A1 (de) * | 2002-12-05 | 2004-06-24 | Schott Glas | Ofen |
| AU2003290429A1 (en) * | 2002-12-25 | 2004-07-22 | Casio Computer Co., Ltd. | Optical dna sensor, dna reading apparatus, identification method of dna and manufacturing method of optical dna sensor |
| US6991003B2 (en) * | 2003-07-28 | 2006-01-31 | M.Braun, Inc. | System and method for automatically purifying solvents |
| DE602004011386T2 (de) * | 2003-11-20 | 2009-01-08 | Koninklijke Philips Electronics N.V. | Dünnschichtheizelement |
| DE102004019715A1 (de) * | 2004-04-20 | 2005-11-17 | Daimlerchrysler Ag | Kraftstoffbehälter |
| EP1653778A1 (fr) * | 2004-10-26 | 2006-05-03 | Cheng-Ping Lin | Film de chauffage avec stabilisation de température automatisée |
| EP1681905A1 (fr) * | 2005-01-17 | 2006-07-19 | Cheng-Ping Lin | Méthode de fabrication d'un film électrique chauffant à semiconducteur |
| AU2008219092A1 (en) * | 2007-02-20 | 2008-08-28 | Thermoceramix Inc. | Gas heating apparatus and methods |
| DE102008050895A1 (de) | 2008-09-25 | 2010-04-01 | E.G.O. Elektro-Gerätebau GmbH | Pumpe für Fluide |
| GB0908860D0 (en) * | 2009-05-22 | 2009-07-01 | Sagentia Ltd | Iron |
| DE102010063934A1 (de) * | 2010-12-22 | 2012-06-28 | BSH Bosch und Siemens Hausgeräte GmbH | Heizkörper sowie Haushaltsgerät mit einem Heizkörper und Verfahren zum Herstellen |
| US9408497B2 (en) | 2013-08-21 | 2016-08-09 | Whirlpool Corporation | Multi-functional toasting platform utilizing a coated clear-glass heating element |
| US20150297029A1 (en) | 2014-04-16 | 2015-10-22 | Spectrum Brands, Inc. | Cooking appliance using thin-film heating element |
| EP3132653A4 (fr) | 2014-04-16 | 2018-06-06 | Spectrum Brands, Inc. | Système de récipient portable pour chauffer une boisson |
| WO2015161110A1 (fr) * | 2014-04-16 | 2015-10-22 | Spectrum Brands, Inc. | Grille-pain utilisant un élément chauffant à film mince |
| KR101737693B1 (ko) * | 2015-07-02 | 2017-05-18 | 구각회 | 저전력 고열 면상 발열체 |
| EP3317134B1 (fr) * | 2015-07-03 | 2022-01-12 | Kautex Textron GmbH & Co. KG | Dispositif de décongélation pour réservoir de liquide fonctionnel |
| WO2018136689A1 (fr) | 2017-01-20 | 2018-07-26 | Bunn-O-Matic Corporation | Chauffe-eau à la demande à réponse instantanée |
| EP3447304B1 (fr) * | 2017-08-25 | 2026-04-15 | Sanhua AWECO Appliance Systems GmbH | Élément de chauffage en couches minces pour une pompe à fluide |
| CN111447695B (zh) * | 2020-05-05 | 2022-12-30 | 中山市烯帝科技有限公司 | 石墨烯远红外发热板的制作方法及其配方 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2564709A (en) * | 1950-11-24 | 1951-08-21 | Corning Glass Works | Electrically conducting coating on glass and other ceramic bodies |
| US3108019A (en) * | 1958-02-14 | 1963-10-22 | Corning Glass Works | Method of stabilizing the electrical resistance of a metal oxide film |
| US3044903A (en) * | 1958-08-25 | 1962-07-17 | Philco Corp | Thin film resistors |
| US3551195A (en) * | 1968-08-29 | 1970-12-29 | Matsushita Electric Industrial Co Ltd | Resistor composition and article |
| SU577700A1 (ru) * | 1975-12-08 | 1977-10-25 | Предприятие П/Я Р-6707 | Токопровод щий материал дл пленочных электронагревателей |
| US4340508A (en) * | 1979-01-29 | 1982-07-20 | Trw Inc. | Resistance material, resistor and method of making the same |
-
1987
- 1987-02-21 DE DE19873705639 patent/DE3705639A1/de not_active Withdrawn
-
1988
- 1988-02-16 EP EP88200279A patent/EP0280362B1/fr not_active Expired - Lifetime
- 1988-02-16 DE DE3889359T patent/DE3889359D1/de not_active Expired - Fee Related
- 1988-02-18 JP JP63034117A patent/JP2616947B2/ja not_active Expired - Lifetime
- 1988-02-22 US US07/158,522 patent/US4889974A/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202008008709U1 (de) | 2008-06-28 | 2009-11-19 | Moser, Helmut | Tisch sowie Tischplatte eines Tisches |
Also Published As
| Publication number | Publication date |
|---|---|
| US4889974A (en) | 1989-12-26 |
| EP0280362A3 (en) | 1990-01-31 |
| JPS63252378A (ja) | 1988-10-19 |
| DE3705639A1 (de) | 1988-09-01 |
| DE3889359D1 (de) | 1994-06-09 |
| JP2616947B2 (ja) | 1997-06-04 |
| EP0280362A2 (fr) | 1988-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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