EP0334751A1 - Verfahren und Vorrichtung zum Spalten von Siliciumwafern - Google Patents

Verfahren und Vorrichtung zum Spalten von Siliciumwafern Download PDF

Info

Publication number
EP0334751A1
EP0334751A1 EP89400793A EP89400793A EP0334751A1 EP 0334751 A1 EP0334751 A1 EP 0334751A1 EP 89400793 A EP89400793 A EP 89400793A EP 89400793 A EP89400793 A EP 89400793A EP 0334751 A1 EP0334751 A1 EP 0334751A1
Authority
EP
European Patent Office
Prior art keywords
wafer
plate
cleavage
positioning
tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89400793A
Other languages
English (en)
French (fr)
Other versions
EP0334751B1 (de
Inventor
Claude Cornu
André Poinard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP0334751A1 publication Critical patent/EP0334751A1/de
Application granted granted Critical
Publication of EP0334751B1 publication Critical patent/EP0334751B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking

Definitions

  • the invention relates to the field of cleavage of silicon wafers intended to be used as integrated circuit supports.
  • the invention relates to both a method and a device for cleaving such a wafer.
  • Cleavage that is to say the action of splitting an object in the direction of the layers which constitute it, is necessary at different stages of the manufacture of silicon wafers. Indeed, it is essential to carry out, during manufacture, several analyzes on these silicon wafers, in order to monitor and verify their correct manufacture. Observations and verifications under the microscope are generally always practiced. For this purpose, it is therefore necessary to take samples of platelets by splitting them. Currently, these verifications are carried out by operators, either manually with all the uncertainties that this represents, or by means of different equipment. Grinding wheels, diamond saws can be used to perform the cutting, but have many disadvantages. These are among others, a high cost, long production times, polluting work.
  • the object of the invention is to overcome these drawbacks.
  • a first main object of the invention is a method of cleavage of a silicon wafer having at least one flat machined on the circumference of said wafer and oriented at 90 ° relative to the cleavage lines of the wafer, the method being characterized in that it comprises the following stages: - positioning of the plate relative to a constraint tool in a determined position, - fixing of the plate in said position determined at using fixing means, and - Cleavage of the wafer by controlled action on the wafer of said constraint tool which consists of a tip of a material of great hardness.
  • the latter advantageously consists of a diamond point.
  • the positioning of the plate is also carried out using at least one flat, and relative to the fixing means which are themselves positioned relative to the constraint tool.
  • a particular embodiment of the invention provides that the fixing means have a means for separating the plate from the two sides of the cleavage line on which the pressure is applied and perpendicular to the flat used for positioning.
  • the method according to the invention makes it possible, once a first cleavage has been carried out, to effect a second by using, for positioning the wafer, either a second flat, or the first cleavage.
  • a second main object of the invention is a cleavage device using the method described above, and characterized in that: the positioning means consist of a jack actuating a support for the wafer and a base constituting a bearing surface on which the wafer is positioned, -
  • the fixing means consist of the base and a flange, means for bringing this base and this flange closer together are provided for fixing the plate, the constraint tool is movable parallel to the support for its positioning and is movable perpendicular to the support for its action on the wafer, and in that it comprises a mobile optical sighting device parallel to the support for precisely positioning the wafer on the support.
  • a particular embodiment of the device according to the invention provides that the base of the fixing means comprises a "V" edge, thus constituting the means for separating the wafer.
  • the insert support can be moved horizontally and perpendicular to the horizontal movement of the tool, thanks to a micrometric screw.
  • the tightening of the wafer by tightening the flange towards the base, and in particular towards the "V" of the base, can be carried out by means of the jack actuating the support of the wafer vertically.
  • a silicon wafer 2 is shown, placed on a support 4, against a base 6.
  • a silicon wafer of this type has at minus one flat, two flat 8 have been shown here. It is by bringing a flat 8 into contact with the base 6 that we position along an axis XX ′ perpendicular to the contact surface of the base, the silicon wafer 2. Its positioning along an axis YY ′, perpendicular to the first axis XX ′ is ensured by a displacement of the support 4 along this axis YY ′.
  • the silicon wafers have, because of their crystal structure, cleavage lines, identified in this figure, generally oriented at 90 ° relative to each other. This orientation is identified by the two flats 8 machined on the circumference of the silicon wafer 2. It will be recalled that mechanical stresses exist inside the silicon wafer, and are arranged in the axis of the cleavage lines. They allow instant breakage of the wafer, when a slight pressure is exerted on these stresses, using a tip of a material of very high hardness, for example a diamond tip.
  • the means for positioning the silicon wafer 2 are completed by a first small-sized jack 12, called a micro jack, which actuates the support 4 of the wafer 2 vertically.
  • the transverse displacement of the wafer along the axis YY ′ is obtained using a micrometric screw 32 which drives the micro-jack 12 and the support 4. This movement makes it possible to bring the wafer on the axis XX ′ of the figure 1.
  • the method according to the invention uses a constraint tool 14 to exert pressure on the wafer.
  • This constraint tool 14 should preferably act perpendicular to the surface of the silicon wafer 2. It consists of a point made of a material of very high hardness, preferably a diamond point.
  • this constraint tool 14 is carried by a tool holder 16 which is mounted movable in translation along the axis XX ′ previously defined, and this by means of two guide bars 18.
  • an aiming device 20 is used, also mounted in translation on the two guide bars 18.
  • Fixing means are used for this purpose, which here consist mainly of the base 6 previously used for positioning the wafer. The clamping of the latter against the base 6 is ensured by a flange 22.
  • the clamping lugs 24 of the flange 22 can be lowered against the silicon wafer 2, which is in abutment against the base 6.
  • a means for separating the latter from the two sides of the cleavage line on which the pressure is applied are provided.
  • a V-shaped edge 26 is provided on the base 6, the point of the "V” being oriented upwards and constituting a support for the plate. This "V" point 26 is oriented along the cleavage line which will be used during the cleavage, that is to say perpendicular to the flat 8 bearing against the base.
  • This “V” point 26 furthermore makes it possible to prevent the flange 22 from flaking during cleavage, or even in certain cases, breaking the silicon wafer 2. On the other hand, it eliminates parasitic stresses and allows the symmetrical distribution of the tensions created by the flange 22.
  • a possible embodiment of the tightening can be controlled by the micro-jack 12 used for positioning the support 4.
  • an arm 30 is used which is integral with the movable piston of the jack and carrying a rod 28, placed vertically, so as to come to bear below the flange 22.
  • the support is also in the high position, as is this rod 28.
  • the plate of silicon 2 is in the cleavage position, and the flange 22 is raised by the rod 28, the fixing means being in the loosened position.
  • the mobile piston of the micro-jack 12 is lowered, as well as the support 4 and the rod 28.
  • the flange 22 can therefore descend to come and tighten the silicon wafer 2.
  • the force of this tightening is calibrated and can be obtained by means of a second cylinder 34.
  • the following operation consists in putting the constraint tool 14 in position for cleavage.
  • the latter is located as close as possible to the base 6, between the two clamping tabs 24 of the flange 22.
  • the constraint tool is as close as possible to the silicon wafer 2, the cleavage can take place.
  • the method according to the invention provides that the pressure action exerted by the constraint tool on the wafer is controlled, and calibrated.
  • This pressure action is not carried out by the operator but is applied for example by a calibrated spring, housed in the tool holder 16 of the constraint tool 14.
  • This pressure is preferably perpendicular to the plane of the insert.
  • the cleavage of the silicon wafer is instantaneous and is carried out along the cleavage line perpendicular to the flat surface 8 for positioning against the base 6.
  • the method according to the invention allows, after a first cleavage, to carry out a second. Indeed, and for this purpose, one can use a second flat, perpendicular to the first in the case where one wants to perform a cleavage perpendicular to the first. If we want to make this second cleavage parallel to the first, it is possible to use as flat positioning the new edge created by the previous cleavage.
  • the method and the device according to the invention offer the following advantages.
  • the state of the wafer after cleavage allows direct control of the sample taken.
  • the system according to the invention makes it possible to eliminate polishing and cleaning operations.
  • the limitation or absence of machining permitted by the use of the device according to the invention eliminates or limits the splashing of splinters which are, in certain machining cases, a danger for the operator.
  • the device according to the invention In the case of a circuit very advanced in its production, the device according to the invention remains of rapid use, although reduced operations of polishing and cleaning are in this case necessary.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP19890400793 1988-03-23 1989-03-21 Verfahren und Vorrichtung zum Spalten von Siliciumwafern Expired - Lifetime EP0334751B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8803794 1988-03-23
FR8803794A FR2629008B1 (fr) 1988-03-23 1988-03-23 Procede et dispositif de clivage d'une plaquette de silicium

Publications (2)

Publication Number Publication Date
EP0334751A1 true EP0334751A1 (de) 1989-09-27
EP0334751B1 EP0334751B1 (de) 1992-05-20

Family

ID=9364560

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890400793 Expired - Lifetime EP0334751B1 (de) 1988-03-23 1989-03-21 Verfahren und Vorrichtung zum Spalten von Siliciumwafern

Country Status (3)

Country Link
EP (1) EP0334751B1 (de)
DE (1) DE68901566D1 (de)
FR (1) FR2629008B1 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0432422A3 (en) * 1989-12-11 1991-12-11 Naoetsu Electronics Company Method and apparatus for mounting slice base on wafer of semiconductor
US7262115B2 (en) 2005-08-26 2007-08-28 Dynatex International Method and apparatus for breaking semiconductor wafers
CN103713102A (zh) * 2013-12-30 2014-04-09 哈尔滨工业大学 大口径光学元件表面微缺陷修复用二维大行程联动装置
CN107527841A (zh) * 2017-08-25 2017-12-29 浙江羿阳太阳能科技有限公司 一种硅片生产用加工装置
US10065340B2 (en) 2011-11-10 2018-09-04 LatticeGear, LLC Device and method for cleaving
US10773420B2 (en) 2011-11-10 2020-09-15 LatticeGear, LLC Device and method for cleaving a substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105082385A (zh) * 2015-08-10 2015-11-25 浙江辉弘光电能源有限公司 一种硅碇夹具用定位支撑座

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790051A (en) * 1971-09-07 1974-02-05 Radiant Energy Systems Semiconductor wafer fracturing technique employing a pressure controlled roller
FR2192481A5 (de) * 1972-07-13 1974-02-08 Bosonnet Mauric
GB2063149A (en) * 1979-11-13 1981-06-03 Arndrove Fabrications Ltd Pressure-applying hand tool for severing a scored ceramic tile
US4498451A (en) * 1983-08-05 1985-02-12 At&T Technologies, Inc. Cutting articles along known planes
US4653680A (en) * 1985-04-25 1987-03-31 Regan Barrie F Apparatus for breaking semiconductor wafers and the like

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790051A (en) * 1971-09-07 1974-02-05 Radiant Energy Systems Semiconductor wafer fracturing technique employing a pressure controlled roller
FR2192481A5 (de) * 1972-07-13 1974-02-08 Bosonnet Mauric
GB2063149A (en) * 1979-11-13 1981-06-03 Arndrove Fabrications Ltd Pressure-applying hand tool for severing a scored ceramic tile
US4498451A (en) * 1983-08-05 1985-02-12 At&T Technologies, Inc. Cutting articles along known planes
US4653680A (en) * 1985-04-25 1987-03-31 Regan Barrie F Apparatus for breaking semiconductor wafers and the like

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0432422A3 (en) * 1989-12-11 1991-12-11 Naoetsu Electronics Company Method and apparatus for mounting slice base on wafer of semiconductor
US7262115B2 (en) 2005-08-26 2007-08-28 Dynatex International Method and apparatus for breaking semiconductor wafers
US10065340B2 (en) 2011-11-10 2018-09-04 LatticeGear, LLC Device and method for cleaving
US10773420B2 (en) 2011-11-10 2020-09-15 LatticeGear, LLC Device and method for cleaving a substrate
CN103713102A (zh) * 2013-12-30 2014-04-09 哈尔滨工业大学 大口径光学元件表面微缺陷修复用二维大行程联动装置
CN103713102B (zh) * 2013-12-30 2015-04-29 哈尔滨工业大学 大口径光学元件表面微缺陷修复用二维大行程联动装置
CN107527841A (zh) * 2017-08-25 2017-12-29 浙江羿阳太阳能科技有限公司 一种硅片生产用加工装置

Also Published As

Publication number Publication date
DE68901566D1 (de) 1992-06-25
FR2629008B1 (fr) 1991-10-11
FR2629008A1 (fr) 1989-09-29
EP0334751B1 (de) 1992-05-20

Similar Documents

Publication Publication Date Title
EP0738572B1 (de) Verfahren zur Orientierung von Einkristallen zum Schneiden in eine Schneidemaschine und Einrichtung zur Durchführung des Verfahrens
EP0640435B1 (de) Schleifmaschine
EP0040580B1 (de) Vorrichtung zum Ausrichten eines Werkstücks mit einem Träger
CH691045A5 (fr) Procédé pour l'orientation de plusieurs pièces cristallines posées côte à côte sur un support de découpage en vue d'une découpe simultanée dans une machine de découpage et dispositif pour la
EP0402230B1 (de) Verfahren und Vorrichtung zur Markierung und Spaltung von monokristallinen halbleitenden Plättchen
EP0249803B1 (de) Einrichtung zur Steuerung der Näherungsgeschwindigkeit an ein Werkstück
FR2640905A1 (de)
EP0334751B1 (de) Verfahren und Vorrichtung zum Spalten von Siliciumwafern
WO2000059675A1 (fr) Procede de maintien en position d'une piece dans un poste d'assemblage
FR2507520A1 (fr) Pince pour dispositif de levage destine a la manutention de pieces
EP1011917B1 (de) Vorrichtung zum voreinstellen und wuchtungsausgleichen eines werkzeughalters
EP0029383B1 (de) Vorrichtung zum Zusammenfügen der Enden optischer Fasern
FR2694101A1 (fr) Procédé et dispositifs pour couper obliquement un ruban de fibres optiques.
WO1984004480A1 (fr) Machine a rectifier
EP0603074A1 (de) Verfahren zur Kontrolle der Anpassung einer zu schleifenden Linse an ein Brillengestell auf einer Schleifmaschine
EP0177744B1 (de) Messkopf zur Diametermessung von zylindrischen Objekten
FR2832087A1 (fr) Machine a encocher une piece tubulaire a usiner utilisable pour des operations generales de meulage
CH717274A2 (fr) Pince pour machine réglante d'horlogerie.
EP0785409A2 (de) Vorrichtung zum Lesen von Konturen, besonders für Brillengläser
CA2037362C (fr) Pince de coupe, a faible encombrement, pour fibre optique
EP0086155A1 (de) Verfahren zum Polieren optischer Fibern, Anwendung für die Herstellung optischer Kupplungsvorrichtungen
FR2850050A1 (fr) Procede de meulage d'une lentille ophtalmique et machine de meulage associee
EP4096864B1 (de) Portable numerical machining device for a workpiece
FR2492363A1 (fr) Procede de coupe d'une fibre optique et dispositif pour la mise en oeuvre de ce procede
CH365968A (fr) Procédé pour le débordage de lentilles ou verres de lunettes et dispositif pour la mise en oeuvre de ce procédé

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE GB IT NL

17P Request for examination filed

Effective date: 19900303

17Q First examination report despatched

Effective date: 19910115

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE GB IT NL

REF Corresponds to:

Ref document number: 68901566

Country of ref document: DE

Date of ref document: 19920625

ITF It: translation for a ep patent filed
GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19950307

Year of fee payment: 7

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19950309

Year of fee payment: 7

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 19950331

Year of fee payment: 7

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Effective date: 19960321

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Effective date: 19961001

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19960321

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 19961001

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Effective date: 19961203

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20050321