EP0334751B1 - Verfahren und Vorrichtung zum Spalten von Siliciumwafern - Google Patents

Verfahren und Vorrichtung zum Spalten von Siliciumwafern Download PDF

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Publication number
EP0334751B1
EP0334751B1 EP19890400793 EP89400793A EP0334751B1 EP 0334751 B1 EP0334751 B1 EP 0334751B1 EP 19890400793 EP19890400793 EP 19890400793 EP 89400793 A EP89400793 A EP 89400793A EP 0334751 B1 EP0334751 B1 EP 0334751B1
Authority
EP
European Patent Office
Prior art keywords
wafer
support
positioning
tool
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP19890400793
Other languages
English (en)
French (fr)
Other versions
EP0334751A1 (de
Inventor
Claude Cornu
André Poinard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP0334751A1 publication Critical patent/EP0334751A1/de
Application granted granted Critical
Publication of EP0334751B1 publication Critical patent/EP0334751B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking

Definitions

  • the invention relates to the field of cleavage of silicon wafers having at least one flat on their circumference intended to be used as integrated circuit supports.
  • the invention relates to a device for cleaving such a wafer.
  • Cleavage that is to say the action of splitting an object in the direction of the layers which constitute it, is necessary at different stages of the manufacture of silicon wafers. Indeed, it is essential to carry out, during manufacture, several analyzes on these silicon wafers, in order to monitor and verify their correct manufacture. Observations and verifications under the microscope are generally always practiced. For this purpose, it is therefore necessary to take samples of platelets by splitting them. Currently, these verifications are carried out by operators, either manually with all the uncertainties that this represents, or by means of different equipment. Grinding wheels, diamond saws can be used to perform the cutting, but have many disadvantages. These are among others, a high cost, long production times, polluting work.
  • the object of the invention is to overcome these drawbacks.
  • the insert support can be moved horizontally and perpendicular to the horizontal movement of the tool, thanks to a micrometric screw.
  • the tightening of the wafer by tightening the flange towards the base, and in particular towards the "V" of the base, can be carried out by means of the jack actuating the support of the wafer vertically.
  • a silicon wafer 2 is shown, placed on a support 4, against a base 6.
  • a silicon wafer of this type has at minus one flat, two flat 8 have been shown here. It is by bringing a flat 8 into contact with the base 6 that we position along an axis XX ′ perpendicular to the contact surface of the base, the silicon wafer 2. Its positioning along an axis YY ′, perpendicular to the first axis XX ′ is ensured by a displacement of the support 4 along this axis YY ′.
  • the silicon wafers have, by their crystal structure, cleavage lines, identified in this figure, generally oriented at 90 ° relative to each other. This orientation is identified by the two flats 8 machined on the circumference of the silicon wafer 2. It is recalled that mechanical stresses exist inside the silicon wafer, and are arranged in the axis of the cleavage lines. They allow instant breakage of the wafer, when a slight pressure is exerted on these stresses, using a tip of a material of very high hardness, for example a diamond tip.
  • the means for positioning the silicon wafer 2 are completed by a first small-sized jack 12, called a micro jack, which actuates the support 4 of the wafer 2 vertically.
  • the transverse displacement of the wafer along the axis YY ′ is obtained using a micrometric screw 32 which drives the micro-jack 12 and the support 4. This movement makes it possible to bring the wafer on the axis XX ′ of the figure 1.
  • the method according to the invention uses a constraint tool 14 to exert pressure on the wafer.
  • This constraint tool 14 should preferably act perpendicular to the surface of the silicon wafer 2. It consists of a point made of a material of very high hardness, preferably a diamond point.
  • this constraint tool 14 is carried by a tool holder 16 which is mounted movable in translation along the axis XX ′ previously defined, and this by means of two guide bars 18.
  • an aiming device 20 is used, also mounted in translation on the two guide bars 18.
  • Fixing means are used for this purpose, which here consist mainly of the base 6 previously used for positioning the wafer. The clamping of the latter against the base 6 is ensured by a flange 22.
  • the clamping lugs 24 of the flange 22 can be lowered against the silicon wafer 2, which is in abutment against the base 6.
  • a means for separating the latter from the two sides of the cleavage line on which the pressure is applied are provided.
  • a V-shaped edge 26 is provided on the base 6, the point of the "V” being oriented upwards and constituting a support for the plate. This "V" point 26 is oriented along the cleavage line which will be used during the cleavage, that is to say perpendicular to the flat 8 bearing against the base.
  • This “V” point 26 furthermore makes it possible to prevent the flange 22 from flaking during cleavage, or even in certain cases, breaking the silicon wafer 2. On the other hand, it eliminates parasitic stresses and allows the symmetrical distribution of the tensions created by the flange 22.
  • a possible embodiment of the tightening can be controlled by the micro-jack 12 used for positioning the support 4.
  • an arm 30 is used which is integral with the movable piston of the jack and carrying a rod 28, placed vertically, so as to come to bear below the flange 22.
  • the support is also in the high position, as is this rod 28.
  • the plate of silicon 2 is in the cleavage position, and the flange 22 is raised by the rod 28, the fixing means being in the loosened position.
  • the mobile piston of the micro-jack 12 is lowered, as well as the support 4 and the rod 28.
  • the flange 22 can therefore descend to come and tighten the silicon wafer 2.
  • the force of this tightening is calibrated and can be obtained by means of a second cylinder 34.
  • the following operation consists in putting the constraint tool 14 in position for cleavage.
  • the latter is located as close as possible to the base 6, between the two clamping tabs 24 of the flange 22.
  • the constraint tool is as close as possible to the silicon wafer 2, the cleavage can take place.
  • the method according to the invention provides that the pressure action exerted by the constraint tool on the wafer is controlled, and calibrated.
  • This pressure action is not carried out by the operator but is applied for example by a calibrated spring, housed in the tool holder 16 of the constraint tool 14.
  • This pressure is preferably perpendicular to the plane of the insert.
  • the cleavage of the silicon wafer is instantaneous and is carried out along the cleavage line perpendicular to the flat surface 8 for positioning against the base 6.
  • the method according to the invention allows, after a first cleavage, to carry out a second. Indeed, and for this purpose, it is possible to use a second flat, perpendicular to the first in the case where it is desired to carry out a cleavage perpendicular to the first. If we want to make this second cleavage parallel to the first, it is possible to use as a flat positioning the new edge created by the previous cleavage.
  • the method and the device according to the invention offer the following advantages.
  • the state of the wafer after cleavage allows direct control of the sample taken.
  • the system according to the invention makes it possible to eliminate polishing and cleaning operations.
  • the limitation or absence of machining permitted by the use of the device according to the invention eliminates or limits the splashing of splinters which are, in certain machining cases, a danger for the operator.
  • the device according to the invention In the case of a circuit very advanced in its production, the device according to the invention remains of rapid use, although reduced operations of polishing and cleaning are in this case necessary.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Claims (5)

1. Vorrichtung zum Spalten eines Siliziumwafers (2), der wenigstens eine Abflachung (8) auf seinem Umfang besitzt, mit:
- einer Vorrichtung zum Positionieren des Wafers (2) bezüglich eines Spannwerkzeugs (14);
- einer Vorrichtung zum Befestigen (6, 22) des Wafers ( 2 ) in einer vorgegebenen Position;
- einer Vorrichtung zum Spalten des Wafers (2) durch ein kontrolliertes Einwirken des Spannwerkzeugs (14) auf den Wafer, welches aus einer Spitze aus einem sehr harten Material besteht, die für ihre Wirkung auf den Wafer (2) senkrecht zur einer Auflageoberfläche der Positioniervorrichtung und senkrecht zu einer Stütze (4) beweglich ist,
und die eine optische Zielvorrichtung (20) umfaßt, die parallel zur Stütze (4) beweglich ist, um den Wafer genau auf der Stütze (4) anzuordnen,
dadurch gekennzeichnet, daß
- die Positioniervorrichtung aus einer Mikrometerschraube (12), die auf die Stütze (4) des Wafers (2) wirkt und aus einer Sitzfläche (6) besteht, wobei der Wafer (2) gegen eine Auflagefläche derselben positioniert ist, wobei die Positionierung des Wafers (2) durch Positionierung der wenigstens einen Abflachung (8) bezüglich der Befestigungsvorrichtung (6, 22) durchgeführt wird, die selbst bezüglich dem Spannwerkzeug (14) positioniert ist;
- die Befestigungsvorrichtung aus der Sitzfläche (6), die einen V-förmigen Anschlag umfaßt und eine Trennvorrichtung für den Wafer (2) bildet, den beiden Seiten der Spaltlinie, auf die man die Spannung anbringt, und senkrecht zur Abflachung (8) des Wafers (2), die man zur Positionierung verwendet, aus einer Schulter (22) und einer Annäherungsvorrichtung für die Sitzfläche (6) an diese Schulter (22) zum Befestigen des Wafers (2) besteht.
2. Vorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß das Spannwerkzeug (14) auf einem Werkzeugträger (16) montiert ist und daß der Werkzeugträger (16) und die Zielvorrichtung (20) in Translationsrichtung entlang zwei derselben Führungsstäbe (18) beweglich montiert sind.
3. Vorrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Stütze (4) in Translationsrichtung senkrecht zur Bewegung der Zielvorrichtung (20) und zum Werkzeugträger (16) dank einer Mikrometerschraube (32) beweglich ist.
4. Vorrichtung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die bewegliche Achse der Mikrometerschraube (12) an einem Schaft (28) befestigt ist, um die Verriegelung des Wafers (2) zur gleichen Zeit wie die Abwärtsbewegung der Stütze ( 4 ) zur steuern.
5. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß das Spannwerkzeug (14) aus einer Diamantspitze besteht.
EP19890400793 1988-03-23 1989-03-21 Verfahren und Vorrichtung zum Spalten von Siliciumwafern Expired - Lifetime EP0334751B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8803794 1988-03-23
FR8803794A FR2629008B1 (fr) 1988-03-23 1988-03-23 Procede et dispositif de clivage d'une plaquette de silicium

Publications (2)

Publication Number Publication Date
EP0334751A1 EP0334751A1 (de) 1989-09-27
EP0334751B1 true EP0334751B1 (de) 1992-05-20

Family

ID=9364560

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890400793 Expired - Lifetime EP0334751B1 (de) 1988-03-23 1989-03-21 Verfahren und Vorrichtung zum Spalten von Siliciumwafern

Country Status (3)

Country Link
EP (1) EP0334751B1 (de)
DE (1) DE68901566D1 (de)
FR (1) FR2629008B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105082385A (zh) * 2015-08-10 2015-11-25 浙江辉弘光电能源有限公司 一种硅碇夹具用定位支撑座

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03181131A (ja) * 1989-12-11 1991-08-07 Naoetsu Denshi Kogyo Kk 半導体ウエハの補強材形成方法および装置
US7262115B2 (en) 2005-08-26 2007-08-28 Dynatex International Method and apparatus for breaking semiconductor wafers
US10773420B2 (en) 2011-11-10 2020-09-15 LatticeGear, LLC Device and method for cleaving a substrate
US10065340B2 (en) 2011-11-10 2018-09-04 LatticeGear, LLC Device and method for cleaving
CN103713102B (zh) * 2013-12-30 2015-04-29 哈尔滨工业大学 大口径光学元件表面微缺陷修复用二维大行程联动装置
CN107527841A (zh) * 2017-08-25 2017-12-29 浙江羿阳太阳能科技有限公司 一种硅片生产用加工装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790051A (en) * 1971-09-07 1974-02-05 Radiant Energy Systems Semiconductor wafer fracturing technique employing a pressure controlled roller
FR2192481A5 (de) * 1972-07-13 1974-02-08 Bosonnet Mauric
GB2063149B (en) * 1979-11-13 1983-02-16 Arndrove Fabrications Ltd Pressure-applying hand tools for severing a scored ceramic tile
US4498451A (en) * 1983-08-05 1985-02-12 At&T Technologies, Inc. Cutting articles along known planes
US4653680A (en) * 1985-04-25 1987-03-31 Regan Barrie F Apparatus for breaking semiconductor wafers and the like

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105082385A (zh) * 2015-08-10 2015-11-25 浙江辉弘光电能源有限公司 一种硅碇夹具用定位支撑座

Also Published As

Publication number Publication date
DE68901566D1 (de) 1992-06-25
FR2629008B1 (fr) 1991-10-11
EP0334751A1 (de) 1989-09-27
FR2629008A1 (fr) 1989-09-29

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