EP0412537A2 - Procédé et appareil pour la remise en état de toiles de polissage mécano-chimique, en particulier pour disques de semi-conducteur - Google Patents

Procédé et appareil pour la remise en état de toiles de polissage mécano-chimique, en particulier pour disques de semi-conducteur Download PDF

Info

Publication number: EP0412537A2
Authority: EP; European Patent Office
Prior art keywords: polishing; polishing cloth; treatment liquid; base plate; cloth
Prior art date: 1989-08-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP90115269A

Other languages

German (de)

English (en)

Other versions

EP0412537B1 (fr

EP0412537A3 (en

Inventor

Helene Dr. Dipl.-Chem. Prigge

Josef Dipl.-Ing. Lang (Fh)

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siltronic AG

Original Assignee

Wacker Siltronic AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-08-11

Filing date

1990-08-09

Publication date

1991-02-13

1990-08-09 Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG

1991-02-13 Publication of EP0412537A2 publication Critical patent/EP0412537A2/fr

1991-04-24 Publication of EP0412537A3 publication Critical patent/EP0412537A3/de

1993-10-27 Application granted granted Critical

1993-10-27 Publication of EP0412537B1 publication Critical patent/EP0412537B1/fr

2010-08-09 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004744 fabric Substances 0.000 title claims abstract description 88
238000000034 method Methods 0.000 title claims abstract description 19
235000012431 wafers Nutrition 0.000 title claims abstract description 13
239000004065 semiconductor Substances 0.000 title claims abstract description 7
238000005498 polishing Methods 0.000 claims abstract description 157
239000007788 liquid Substances 0.000 claims abstract description 51
238000002360 preparation method Methods 0.000 claims abstract description 29
238000007517 polishing process Methods 0.000 claims abstract description 15
239000002585 base Substances 0.000 claims description 43
239000000654 additive Substances 0.000 claims description 9
239000007864 aqueous solution Substances 0.000 claims description 5
238000012545 processing Methods 0.000 claims description 5
239000012670 alkaline solution Substances 0.000 claims description 2
150000001283 organosilanols Chemical class 0.000 claims description 2
230000000996 additive effect Effects 0.000 claims 1
229910000288 alkali metal carbonate Inorganic materials 0.000 claims 1
150000008041 alkali metal carbonates Chemical class 0.000 claims 1
150000008044 alkali metal hydroxides Chemical class 0.000 claims 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
229910052710 silicon Inorganic materials 0.000 description 6
239000010703 silicon Substances 0.000 description 6
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
239000000243 solution Substances 0.000 description 5
239000003795 chemical substances by application Substances 0.000 description 4
230000000694 effects Effects 0.000 description 4
239000000463 material Substances 0.000 description 4
229920002635 polyurethane Polymers 0.000 description 4
239000004814 polyurethane Substances 0.000 description 4
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
239000011248 coating agent Substances 0.000 description 3
238000000576 coating method Methods 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
238000012360 testing method Methods 0.000 description 3
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
229910001218 Gallium arsenide Inorganic materials 0.000 description 2
BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
150000001298 alcohols Chemical class 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
230000006866 deterioration Effects 0.000 description 2
238000002845 discoloration Methods 0.000 description 2
238000004090 dissolution Methods 0.000 description 2
229910052732 germanium Inorganic materials 0.000 description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
238000005259 measurement Methods 0.000 description 2
239000012071 phase Substances 0.000 description 2
229920000728 polyester Polymers 0.000 description 2
-1 polypropylene Polymers 0.000 description 2
229920000915 polyvinyl chloride Polymers 0.000 description 2
239000004800 polyvinyl chloride Substances 0.000 description 2
BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
150000004760 silicates Chemical class 0.000 description 2
235000012239 silicon dioxide Nutrition 0.000 description 2
229910000838 Al alloy Inorganic materials 0.000 description 1
QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
229910052688 Gadolinium Inorganic materials 0.000 description 1
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
239000004743 Polypropylene Substances 0.000 description 1
ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
239000005708 Sodium hypochlorite Substances 0.000 description 1
229910000831 Steel Inorganic materials 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
238000005299 abrasion Methods 0.000 description 1
230000001476 alcoholic effect Effects 0.000 description 1
239000003513 alkali Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
239000008346 aqueous phase Substances 0.000 description 1
230000006399 behavior Effects 0.000 description 1
125000004432 carbon atom Chemical group C* 0.000 description 1
150000004649 carbonic acid derivatives Chemical class 0.000 description 1
229910052681 coesite Inorganic materials 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
238000009833 condensation Methods 0.000 description 1
230000005494 condensation Effects 0.000 description 1
238000011109 contamination Methods 0.000 description 1
229910052906 cristobalite Inorganic materials 0.000 description 1
230000000593 degrading effect Effects 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
239000000835 fiber Substances 0.000 description 1
239000002657 fibrous material Substances 0.000 description 1
230000009969 flowable effect Effects 0.000 description 1
239000002223 garnet Substances 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
230000002706 hydrostatic effect Effects 0.000 description 1
150000004679 hydroxides Chemical class 0.000 description 1
238000011068 loading method Methods 0.000 description 1
230000015654 memory Effects 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
GBMDVOWEEQVZKZ-UHFFFAOYSA-N methanol;hydrate Chemical compound O.OC GBMDVOWEEQVZKZ-UHFFFAOYSA-N 0.000 description 1
238000010327 methods by industry Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
239000002245 particle Substances 0.000 description 1
230000035515 penetration Effects 0.000 description 1
239000004033 plastic Substances 0.000 description 1
229920003023 plastic Polymers 0.000 description 1
239000006223 plastic coating Substances 0.000 description 1
229920001155 polypropylene Polymers 0.000 description 1
229920001343 polytetrafluoroethylene Polymers 0.000 description 1
239000004810 polytetrafluoroethylene Substances 0.000 description 1
229910052700 potassium Inorganic materials 0.000 description 1
239000011591 potassium Substances 0.000 description 1
229910000027 potassium carbonate Inorganic materials 0.000 description 1
239000008213 purified water Substances 0.000 description 1
239000010453 quartz Substances 0.000 description 1
230000001172 regenerating effect Effects 0.000 description 1
230000002787 reinforcement Effects 0.000 description 1
239000000523 sample Substances 0.000 description 1
238000007790 scraping Methods 0.000 description 1
SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
229910052708 sodium Inorganic materials 0.000 description 1
239000011734 sodium Substances 0.000 description 1
SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
239000007787 solid Substances 0.000 description 1
230000006641 stabilisation Effects 0.000 description 1
238000011105 stabilization Methods 0.000 description 1
239000010959 steel Substances 0.000 description 1
229910052682 stishovite Inorganic materials 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1
WVMSIBFANXCZKT-UHFFFAOYSA-N triethyl(hydroxy)silane Chemical compound CC[Si](O)(CC)CC WVMSIBFANXCZKT-UHFFFAOYSA-N 0.000 description 1
PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
AAPLIUHOKVUFCC-UHFFFAOYSA-N trimethylsilanol Chemical compound C[Si](C)(C)O AAPLIUHOKVUFCC-UHFFFAOYSA-N 0.000 description 1

Images

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces

Definitions

the base plate or the outlet openings can be supplied with treatment liquid, for example, by means of a feeder tions 8 take place.
the feed lines are expediently connected to one or more reservoirs in which the treatment liquid is placed.
the required working pressure can be generated in various ways, for example hydrostatically by means of an elevated position of the reservoirs in relation to the base plate, or by means of pressurized gases acting on the liquid, such as compressed air, or by pumps.
the working pressure is generally not subject to any restrictions, those pressures are generally only used in exceptional cases where the equipment, operation and safety requirements are disproportionately high.
the line pressure provided in the usual liquid supply systems for example water pipes, is sufficient anyway.

Landscapes

Engineering & Computer Science (AREA)
Mechanical Engineering (AREA)
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Mechanical Treatment Of Semiconductor (AREA)

EP90115269A 1989-08-11 1990-08-09 Procédé et appareil pour la remise en état de toiles de polissage mécano-chimique, en particulier pour disques de semi-conducteur Expired - Lifetime EP0412537B1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE3926673A DE3926673A1 (de)	1989-08-11	1989-08-11	Verfahren und vorrichtung zur poliertuchaufbereitung beim chemomechanischen polieren, insbesondere von halbleiterscheiben
DE3926673		1989-08-11

Publications (3)

Publication Number	Publication Date
EP0412537A2 true EP0412537A2 (fr)	1991-02-13
EP0412537A3 EP0412537A3 (en)	1991-04-24
EP0412537B1 EP0412537B1 (fr)	1993-10-27

Family

ID=6387003

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP90115269A Expired - Lifetime EP0412537B1 (fr)	1989-08-11	1990-08-09	Procédé et appareil pour la remise en état de toiles de polissage mécano-chimique, en particulier pour disques de semi-conducteur

Country Status (5)

Country	Link
US (1)	US5167667A (fr)
EP (1)	EP0412537B1 (fr)
JP (1)	JP2540080B2 (fr)
KR (1)	KR960015258B1 (fr)
DE (2)	DE3926673A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0692318A1 (fr) *	1994-06-28	1996-01-17	Ebara Corporation	Procédé et dispositif de nettoyage des pièces

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5775983A (en) *	1995-05-01	1998-07-07	Applied Materials, Inc.	Apparatus and method for conditioning a chemical mechanical polishing pad
US5639311A (en) *	1995-06-07	1997-06-17	International Business Machines Corporation	Method of cleaning brushes used in post CMP semiconductor wafer cleaning operations
JP3778594B2 (ja) *	1995-07-18	2006-05-24	株式会社荏原製作所	ドレッシング方法
US5938507A (en) *	1995-10-27	1999-08-17	Applied Materials, Inc.	Linear conditioner apparatus for a chemical mechanical polishing system
JP2862073B2 (ja) *	1995-12-08	1999-02-24	日本電気株式会社	ウェハー研磨方法
US5704987A (en) *	1996-01-19	1998-01-06	International Business Machines Corporation	Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
US5840202A (en) *	1996-04-26	1998-11-24	Memc Electronic Materials, Inc.	Apparatus and method for shaping polishing pads
US5645682A (en) *	1996-05-28	1997-07-08	Micron Technology, Inc.	Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers
JPH1071571A (ja) *	1996-06-27	1998-03-17	Fujitsu Ltd	研磨布、研磨布の表面処理方法、及び研磨布の洗浄方法
US6379221B1 (en)	1996-12-31	2002-04-30	Applied Materials, Inc.	Method and apparatus for automatically changing a polishing pad in a chemical mechanical polishing system
US5957754A (en) *	1997-08-29	1999-09-28	Applied Materials, Inc.	Cavitational polishing pad conditioner
US6152148A (en) *	1998-09-03	2000-11-28	Honeywell, Inc.	Method for cleaning semiconductor wafers containing dielectric films
US6352595B1 (en) *	1999-05-28	2002-03-05	Lam Research Corporation	Method and system for cleaning a chemical mechanical polishing pad
DE10004578C1 (de) *	2000-02-03	2001-07-26	Wacker Siltronic Halbleitermat	Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
US7220322B1 (en) *	2000-08-24	2007-05-22	Applied Materials, Inc.	Cu CMP polishing pad cleaning
US6800020B1 (en)	2000-10-02	2004-10-05	Lam Research Corporation	Web-style pad conditioning system and methods for implementing the same
JP2006159317A (ja) *	2004-12-03	2006-06-22	Asahi Sunac Corp	研磨パッドのドレッシング方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2110750A1 (de) *	1970-03-17	1971-10-07	Colgate Palmolive Co	Teppichreinigungsmittel und Verfahren zu seiner Herstellung
US4219333A (en) *	1978-07-03	1980-08-26	Harris Robert D	Carbonated cleaning solution
IT1134225B (it) *	1980-11-12	1986-08-13	Stemac Spa	Procedimento e mezzi per liberare carta abrasiva dalla polvere di levigatura depositatasi
JPS6017947U (ja) *	1983-07-18	1985-02-06	東芝機械株式会社	ポリシング装置の洗浄用ブラシ
JPS63283857A (ja) *	1987-05-15	1988-11-21	Asahi Chem Ind Co Ltd	研磨布
US4968380A (en) *	1989-05-24	1990-11-06	Mobil Solar Energy Corporation	System for continuously replenishing melt

1989
- 1989-08-11 DE DE3926673A patent/DE3926673A1/de not_active Withdrawn
1990
- 1990-05-17 JP JP2125604A patent/JP2540080B2/ja not_active Expired - Lifetime
- 1990-06-05 US US07/533,479 patent/US5167667A/en not_active Expired - Fee Related
- 1990-08-09 DE DE90115269T patent/DE59003208D1/de not_active Expired - Fee Related
- 1990-08-09 EP EP90115269A patent/EP0412537B1/fr not_active Expired - Lifetime
- 1990-08-10 KR KR1019900012293A patent/KR960015258B1/ko not_active Expired - Lifetime

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0692318A1 (fr) *	1994-06-28	1996-01-17	Ebara Corporation	Procédé et dispositif de nettoyage des pièces
US5846335A (en) *	1994-06-28	1998-12-08	Ebara Corporation	Method for cleaning workpiece

Also Published As

Publication number	Publication date
EP0412537B1 (fr)	1993-10-27
JPH0379268A (ja)	1991-04-04
DE3926673A1 (de)	1991-02-14
DE59003208D1 (de)	1993-12-02
EP0412537A3 (en)	1991-04-24
KR960015258B1 (ko)	1996-11-07
US5167667A (en)	1992-12-01
KR910004308A (ko)	1991-03-28
JP2540080B2 (ja)	1996-10-02

Legal Events

Date	Code	Title	Description
1990-12-29	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1991-02-13	17P	Request for examination filed	Effective date: 19900809
1991-02-13	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): DE GB IT
1991-03-07	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
1991-04-24	AK	Designated contracting states	Kind code of ref document: A3 Designated state(s): DE GB IT
1993-03-24	17Q	First examination report despatched	Effective date: 19930208
1993-07-08	ITF	It: translation for a ep patent filed
1993-09-09	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
1993-10-27	AK	Designated contracting states	Kind code of ref document: B1 Designated state(s): DE GB IT
1993-12-02	REF	Corresponds to:	Ref document number: 59003208 Country of ref document: DE Date of ref document: 19931202
1994-01-05	GBT	Gb: translation of ep patent filed (gb section 77(6)(a)/1977)	Effective date: 19931202
1994-08-27	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
1994-08-27	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT
1994-10-19	26N	No opposition filed
1995-08-09	REG	Reference to a national code	Ref country code: GB Ref legal event code: 732E
1996-07-24	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: GB Payment date: 19960724 Year of fee payment: 7
1996-09-05	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: DE Payment date: 19960905 Year of fee payment: 7
1997-08-09	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19970809
1998-04-01	GBPC	Gb: european patent ceased through non-payment of renewal fee	Effective date: 19970809
1998-05-01	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 19980501
2005-08-09	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED. Effective date: 20050809

Publication	Publication Date	Title
EP0412537B1 (fr)	1993-10-27	Procédé et appareil pour la remise en état de toiles de polissage mécano-chimique, en particulier pour disques de semi-conducteur
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EP2218004B1 (fr)	2012-02-15	Dispositif et procédé de nettoyage d'objets
DE112011100688T5 (de)	2013-02-28	Verfahren zum Herstellen eines Halbleiterwafers
DE1621473A1 (de)	1970-07-23	Verfahren zum Polieren von Halbleiteroberflaechen,insbesondere von Oberflaechen von Siliciumkoerpern und Vorrichtung zum Durchfuehren des Verfahrens
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DE2007865C2 (de)	1982-04-22	Verfahren und Vorrichtung zum Polieren einer Siliciumoberfläche
DE3148957C2 (de)	1987-01-02	Verfahren zum Herstellen rückseitig oberflächengestörter Halbleiterscheiben
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DE69606669T2 (de)	2000-08-17	Vorrichtung zum abrichten eines polierkissen
DE69802630T2 (de)	2002-05-23	Verfahren und Vorrichtung zur Oberflächenbehandlung von Flachdruckplattenträger und Schleifmaschine zum Schleifen der Behandlungsbürste
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