EP0478004A3 - Insulated gate transistor operable at a low drain-source voltage - Google Patents

Insulated gate transistor operable at a low drain-source voltage Download PDF

Info

Publication number: EP0478004A3
Authority: EP; European Patent Office
Prior art keywords: source voltage; insulated gate; gate transistor; low drain; transistor operable
Prior art date: 1987-09-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP19910119868

Other languages

English (en)

Other versions

EP0478004A2 (fr

Inventor

Kenji Ogawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-09-30

Filing date

1988-09-30

Publication date

1992-05-06

1988-09-30 Application filed by NEC Corp filed Critical NEC Corp

1992-04-01 Publication of EP0478004A2 publication Critical patent/EP0478004A2/fr

1992-05-06 Publication of EP0478004A3 publication Critical patent/EP0478004A3/en

Status Withdrawn legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/491—Vertical IGBTs having both emitter contacts and collector contacts in the same substrate side
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/233—Cathode or anode electrodes for thyristors

EP19910119868 1987-09-30 1988-09-30 Insulated gate transistor operable at a low drain-source voltage Withdrawn EP0478004A3 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP248311/87		1987-09-30
JP62248311A JPH0680832B2 (ja)	1987-09-30	1987-09-30	半導体装置

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
EP88116192.1 Division		1988-09-30

Publications (2)

Publication Number	Publication Date
EP0478004A2 EP0478004A2 (fr)	1992-04-01
EP0478004A3 true EP0478004A3 (en)	1992-05-06

Family

ID=17176187

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
EP19910119868 Withdrawn EP0478004A3 (en)	1987-09-30	1988-09-30	Insulated gate transistor operable at a low drain-source voltage
EP88116192A Expired EP0310112B1 (fr)	1987-09-30	1988-09-30	Transistor à grille isolée opérable à basse tension drain-source

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
EP88116192A Expired EP0310112B1 (fr)	1987-09-30	1988-09-30	Transistor à grille isolée opérable à basse tension drain-source

Country Status (4)

Country	Link
US (1)	US5060032A (fr)
EP (2)	EP0478004A3 (fr)
JP (1)	JPH0680832B2 (fr)
DE (1)	DE3876359T2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0680832B2 (ja)	1987-09-30	1994-10-12	日本電気株式会社	半導体装置
US5198688A (en) *	1989-03-06	1993-03-30	Fuji Electric Co., Ltd.	Semiconductor device provided with a conductivity modulation MISFET
JP3182262B2 (ja) *	1993-07-12	2001-07-03	株式会社東芝	半導体装置
DE4335298C1 (de) *	1993-10-15	1995-03-23	Siemens Ag	Schaltungsstruktur mit mindestens einem bipolaren Leistungsbauelement und Verfahren zu deren Betrieb
US5665988A (en) *	1995-02-09	1997-09-09	Fuji Electric Co., Ltd.	Conductivity-modulation semiconductor
JP2005333055A (ja) *	2004-05-21	2005-12-02	Toyota Central Res & Dev Lab Inc	半導体装置
JP2006332199A (ja) *	2005-05-24	2006-12-07	Shindengen Electric Mfg Co Ltd	ＳｉＣ半導体装置
JP4937213B2 (ja) *	2008-08-26	2012-05-23	三菱電機株式会社	電力用半導体装置
JP2012186353A (ja) *	2011-03-07	2012-09-27	Fuji Electric Co Ltd	複合半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0077072A2 (fr) *	1981-10-14	1983-04-20	Hitachi, Ltd.	Elément de résistance à haute tension
EP0228107A2 (fr) *	1985-11-27	1987-07-08	Koninklijke Philips Electronics N.V.	Transistors latéraux à grille isolée commutant rapidement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0118007B1 (fr) *	1983-02-04	1990-05-23	General Electric Company	Circuit électrique comprenant un dispositif semi-conducteur commutateur de puissance comportant une structure SCR
JPS6017026A (ja) *	1983-07-08	1985-01-28	Nishimura Watanabe Chiyuushiyutsu Kenkyusho:Kk	金属チタンの製造方法
JPS60170263A (ja)	1984-02-15	1985-09-03	Nec Corp	縦型電界効果トランジスタ
DE3628857A1 (de) *	1985-08-27	1987-03-12	Mitsubishi Electric Corp	Halbleitereinrichtung
JPH0680832B2 (ja)	1987-09-30	1994-10-12	日本電気株式会社	半導体装置
US4901127A (en) *	1988-10-07	1990-02-13	General Electric Company	Circuit including a combined insulated gate bipolar transistor/MOSFET

1987
- 1987-09-30 JP JP62248311A patent/JPH0680832B2/ja not_active Expired - Lifetime
1988
- 1988-09-30 DE DE8888116192T patent/DE3876359T2/de not_active Expired - Fee Related
- 1988-09-30 EP EP19910119868 patent/EP0478004A3/en not_active Withdrawn
- 1988-09-30 EP EP88116192A patent/EP0310112B1/fr not_active Expired
1990
- 1990-11-13 US US07/611,453 patent/US5060032A/en not_active Expired - Fee Related

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0077072A2 (fr) *	1981-10-14	1983-04-20	Hitachi, Ltd.	Elément de résistance à haute tension
EP0228107A2 (fr) *	1985-11-27	1987-07-08	Koninklijke Philips Electronics N.V.	Transistors latéraux à grille isolée commutant rapidement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
INTERNATIONAL ELECTRON DEVICES MEETING, HELD IN WASHINGTON, D.C., TECHNICAL DIGEST. December 1985, NEW YORK, US pages 724 - 727; H. W. BECKE: 'Approaches to isolation in high voltage integrated circuits' *

Also Published As

Publication number	Publication date
DE3876359D1 (de)	1993-01-14
EP0310112B1 (fr)	1992-12-02
EP0310112A3 (en)	1989-05-24
EP0478004A2 (fr)	1992-04-01
DE3876359T2 (de)	1993-04-01
US5060032A (en)	1991-10-22
EP0310112A2 (fr)	1989-04-05
JPH0680832B2 (ja)	1994-10-12
JPS6489564A (en)	1989-04-04

Legal Events

Date	Code	Title	Description
1992-02-14	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1992-03-18	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
1992-04-01	17P	Request for examination filed	Effective date: 19911121
1992-04-01	AC	Divisional application: reference to earlier application	Ref document number: 310112 Country of ref document: EP
1992-04-01	AK	Designated contracting states	Kind code of ref document: A2 Designated state(s): DE FR GB
1992-05-06	AK	Designated contracting states	Kind code of ref document: A3 Designated state(s): DE FR GB
1994-11-23	17Q	First examination report despatched	Effective date: 19941011
1995-04-25	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN
1995-06-14	18W	Application withdrawn	Withdrawal date: 19950419

Publication	Publication Date	Title
EP0450082A4 (en)	1992-05-06	Insulated gate bipolar transistor
EP0190925A3 (en)	1988-03-30	A driving circuit for an insulated gate bipolar transistor
DE3279955D1 (en)	1989-10-26	Insulated gate field effect transistor
DE3275684D1 (en)	1987-04-16	Insulated gate field effect transistor
DE3570556D1 (en)	1989-06-29	Self-aligned metal-semiconductor field effect transistor
EP0224269A3 (en)	1989-02-22	Lateral insulated gate transistor with improved latch up immunity
GB8527062D0 (en)	1985-12-04	Mos transistor manufacture
EP0214047A3 (en)	1988-03-02	Field effect transistor
EP0101608A3 (en)	1986-06-11	Insulated gate type field effect transistor having a silicon gate electrode
EP0217266A3 (en)	1989-04-05	Insulated gate device
GR880300016T1 (en)	1988-10-18	Insulated gate type field effect transistor
EP0239368A3 (en)	1990-02-07	Field-effect transistor
EP0228107A3 (en)	1988-08-31	Fast switching lateral insulated gate transistors
GB9416588D0 (en)	1994-10-12	Insulated gate bipolar transistor
EP0338312A3 (en)	1990-03-21	Insulated gate bipolar transistor
IL79505A0 (en)	1986-10-31	Double injection field effect transistors
GB9208758D0 (en)	1992-06-10	Insulated gate bipolar transistor
EP0222369A3 (en)	1989-02-22	Gate circuit
KR0134778B1 (en)	1998-04-20	Lateral transistor with elongated emitter
EP0478004A3 (en)	1992-05-06	Insulated gate transistor operable at a low drain-source voltage
DE3270103D1 (en)	1986-04-30	Insulated gate field effect transistor
EP0228624A3 (en)	1989-10-18	Field effect transistor
EP0149033A3 (en)	1986-12-30	Field-effect transistor with insulated gate electrode
EP0363670A3 (en)	1990-11-22	Mos field-effect transistor
GB8523369D0 (en)	1985-10-23	Transistor