EP0538465A1 - Ensemble plane mince destine a refroidir un alignement de diodes laser a emission le long d'un bord - Google Patents

Ensemble plane mince destine a refroidir un alignement de diodes laser a emission le long d'un bord

Info

Publication number
EP0538465A1
EP0538465A1 EP92917292A EP92917292A EP0538465A1 EP 0538465 A1 EP0538465 A1 EP 0538465A1 EP 92917292 A EP92917292 A EP 92917292A EP 92917292 A EP92917292 A EP 92917292A EP 0538465 A1 EP0538465 A1 EP 0538465A1
Authority
EP
European Patent Office
Prior art keywords
inlet
coolant
microchannels
assembly
outlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP92917292A
Other languages
German (de)
English (en)
Other versions
EP0538465A4 (en
Inventor
David Carl Mundinger
William Jeffrey Benett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Energy
Original Assignee
US Department of Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Energy filed Critical US Department of Energy
Publication of EP0538465A1 publication Critical patent/EP0538465A1/fr
Publication of EP0538465A4 publication Critical patent/EP0538465A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

Definitions

  • Arrays of laser diodes include a number of laser diodes positioned closely together.
  • Laser diode arrays may be manufactured in various architectures such as the stacked architecture and the monolithic surface emitting architecture.
  • the monolithic surface emitting architecture a number of edge emitting laser bars are positioned on the surface of a thermally conductive material, next to reflectors angled at 45°.
  • the laser radiation from the laser diode bars is first emitted in a direction along the surface of the block, but is then reflected upward by angled reflectors on the block's surface.
  • the conventional electric current source 114 provides an electric current to the laser diode bar 112.
  • the electric current is delivered through a first terminal 160 provided on the top of the wafer 130, and a second terminal 162 provided on the bottom of the bottom wafer 134.
  • the first terminal 160 will be assumed to be the positive terminal 160
  • the second terminal 162 will be assumed to be the negative terminal 162, and electric current will be assumed to flow from positive to negative.
  • FIG. 1 is a dose-up of a portion of the assembly 110 shown in Figure 1.
  • the bottom surface of the top wafer 130 comprises a plurality of microchannels 120 proximate to the laser diode bar 112.
  • the microchannels 120 are formed in the wafer 130, parallel to the lengthwise direction of the laser diode bar 112.
  • the microchannels 120 can be formed by conventional anisotropic etching techniques which etch the material along crystal axes.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Un alignement de diodes laser (112) comporte une pluralité d'ensembles planes et un refroidissement actif de chaque ensemble. Ledit alignement de diodes laser (112) peut fonctionner pendant un cycle opératoire long ou en continu. Une barre de diodes laser (112) et un dissipateur thermique à microcanaux (120) sont connectés thermiquement dans un ensemble plane mince compact (110), la barre de diodes laser étant située à proximité d'un bord (116). Le dispositif de refroidissement (122) comporte un dissipateur thermique à microcanaux (12) situé à proximité de la barre de diodes laser (112) de manière à absorber la chaleur produite par le fonctionnement du laser. Afin que l'agent réfrigérant parvienne dans les microcanaux, chaque ensemble plane mince comprend des passages (150-152) qui relient les microcanaux (120) à des galeries d'entrée et de sortie (142). Chaque passage d'entrée (150) peut comporter une fente étroite qui dirige l'agent réfrigérant dans les microcanaux (120) et augmente la vitesse du débit dans ces derniers. Lesdites galeries (140, 142) sont constituées de trous qui parcourent chacun des ensembles de l'alignement. Les galeries d'entrée et de sortie (140, 142) sont reliées à un système de circulation d'agent réfrigérant conventionnel (122). Ledit alignement de diodes laser (112) à refroidissement actif trouve des applications en tant que pompe optique pour des lasers à solide de grande puissance ou en mettant en contact les diodes avec des lentilles de fibres optiques. En outre, lesdits réseaux peuvent être utiles dans des applications présentant des contraintes en matière d'espace ou des limitations d'énergie et dans des applications militaires et spatiales.
EP19920917292 1991-04-09 1992-04-09 Thin planer package for cooling an array of edge-emitting laser diodes Withdrawn EP0538465A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/682,770 US5105430A (en) 1991-04-09 1991-04-09 Thin planar package for cooling an array of edge-emitting laser diodes
US682770 1991-04-09

Publications (2)

Publication Number Publication Date
EP0538465A1 true EP0538465A1 (fr) 1993-04-28
EP0538465A4 EP0538465A4 (en) 1993-10-06

Family

ID=24741062

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19920917292 Withdrawn EP0538465A4 (en) 1991-04-09 1992-04-09 Thin planer package for cooling an array of edge-emitting laser diodes

Country Status (4)

Country Link
US (1) US5105430A (fr)
EP (1) EP0538465A4 (fr)
JP (1) JPH05508265A (fr)
WO (1) WO1992019027A1 (fr)

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US5105430A (en) 1992-04-14
JPH05508265A (ja) 1993-11-18
WO1992019027A1 (fr) 1992-10-29

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