EP0667200A1 - Préparation de poudre de métal de haute pureté à partir d'alkoxydes de métal - Google Patents
Préparation de poudre de métal de haute pureté à partir d'alkoxydes de métal Download PDFInfo
- Publication number
- EP0667200A1 EP0667200A1 EP95101419A EP95101419A EP0667200A1 EP 0667200 A1 EP0667200 A1 EP 0667200A1 EP 95101419 A EP95101419 A EP 95101419A EP 95101419 A EP95101419 A EP 95101419A EP 0667200 A1 EP0667200 A1 EP 0667200A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- alkoxide
- tungsten
- methoxide
- metal
- pref
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 23
- 239000002184 metal Substances 0.000 title claims abstract description 23
- 150000004703 alkoxides Chemical class 0.000 title claims abstract description 13
- 239000000843 powder Substances 0.000 title claims abstract description 10
- 238000002360 preparation method Methods 0.000 title description 2
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 9
- LVNAMAOHFNPWJB-UHFFFAOYSA-N methanol;tantalum Chemical compound [Ta].OC.OC.OC.OC.OC LVNAMAOHFNPWJB-UHFFFAOYSA-N 0.000 claims abstract description 5
- NTWWZVDCSZOPGW-UHFFFAOYSA-N CO[W](OC)(OC)OC Chemical compound CO[W](OC)(OC)OC NTWWZVDCSZOPGW-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000012159 carrier gas Substances 0.000 claims abstract description 4
- 229910052756 noble gas Inorganic materials 0.000 claims abstract 2
- 150000002835 noble gases Chemical class 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 20
- -1 alkoxide compounds Chemical class 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 150000004704 methoxides Chemical class 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 abstract description 2
- OIIGPGKGVNSPBV-UHFFFAOYSA-N [W+4].CC[O-].CC[O-].CC[O-].CC[O-] Chemical compound [W+4].CC[O-].CC[O-].CC[O-].CC[O-] OIIGPGKGVNSPBV-UHFFFAOYSA-N 0.000 abstract description 2
- IJCCNPITMWRYRC-UHFFFAOYSA-N methanolate;niobium(5+) Chemical compound [Nb+5].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C IJCCNPITMWRYRC-UHFFFAOYSA-N 0.000 abstract description 2
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 abstract description 2
- SDTMFDGELKWGFT-UHFFFAOYSA-N 2-methylpropan-2-olate Chemical compound CC(C)(C)[O-] SDTMFDGELKWGFT-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- ITQGMAPLESXWPA-UHFFFAOYSA-N [W+6].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C Chemical compound [W+6].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C ITQGMAPLESXWPA-UHFFFAOYSA-N 0.000 description 1
- BCXDNCKWFAAAII-UHFFFAOYSA-N [W+6].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C.[O-]C Chemical compound [W+6].[O-]C.[O-]C.[O-]C.[O-]C.[O-]C.[O-]C BCXDNCKWFAAAII-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZOYJRCIORIVXKU-UHFFFAOYSA-N chromium(3+);2-methylpropan-2-olate Chemical compound [Cr+3].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] ZOYJRCIORIVXKU-UHFFFAOYSA-N 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000001640 fractional crystallisation Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000006198 methoxylation reaction Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
- C22B34/24—Obtaining niobium or tantalum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/28—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from gaseous metal compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/30—Obtaining chromium, molybdenum or tungsten
- C22B34/36—Obtaining tungsten
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/12—Dry methods smelting of sulfides or formation of mattes by gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2201/00—Treatment under specific atmosphere
- B22F2201/01—Reducing atmosphere
- B22F2201/013—Hydrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2203/00—Controlling
- B22F2203/11—Controlling temperature, temperature profile
Definitions
- the present invention relates to a method for producing high-purity metal powder.
- the microfabrication of highly integrated electronic components places increasing demands on the purity of the interconnect metals, e.g. Titanium, niobium, tantalum, molybdenum or tungsten.
- the radioactive elements thorium and uranium can cause serious errors in highly integrated memory chips as a-emitters.
- the van Arkel and de Boer process for producing high-purity titanium is known.
- the raw titanium to be cleaned is heated together with iodine in an evacuated vessel to -500 ° C, whereby gaseous titanium iodide is formed, which in turn is highly purified at another point in the apparatus on a tungsten wire which is electrically heated to -1200 ° C Titan decomposes.
- a disadvantage of the process is that only small amounts can be produced in this way and a number of other elements such as zirconium, hafnium and especially also thorium can also be transferred.
- the desired metal species can also be separated and purified using ion exchange resins, as described in Metallurgy of the Rarer Metals, Volume 6, Tantalum and Niobium, pages 129-133.
- a separation by distillation via the metal halides for example tungsten hexafluoride, is in principle also possible.
- This method is the subject of JP-A 02 30,706.
- Tungsten hexafluoride is reduced with hydrogen at 650-1400 ° C to tungsten powder, which is suitable for the production of sputtering targets.
- the disadvantage of this process is that a large amount of hydrogen fluoride is produced during the reduction with hydrogen.
- the object of this invention was therefore to provide a process for the production of high-purity metal powder which can be carried out simply and inexpensively. This object is achieved by reacting volatile, that is sublimable or distillable, metal alkoxides with a reaction gas.
- This method is the subject of this invention.
- the metal alkoxide compounds which are used according to the invention have the general formula M (OR) x , where M is a metal from Group 3-14 (according to IUPAC 1985), R is an alkyl, aryl, cycloalkyl or aralkyl radical and M (OR ) x is a sublimable or distillable compound.
- M is a metal from Group 3-14 (according to IUPAC 1985)
- R is an alkyl, aryl, cycloalkyl or aralkyl radical
- M (OR ) x is a sublimable or distillable compound.
- some alkoxide compounds that are suitable according to the invention are listed as examples.
- Chromium tert-butoxide, niobium methoxide, niobium ethoxide, tantalum methoxide, tantalum ethoxide, tungsten methoxide and tungsten methoxide are particularly preferred according to the invention.
- the reaction gas in the reaction according to the invention is preferably hydrogen.
- the reaction gas can also be diluted with an inert carrier gas, in particular argon.
- the process according to the invention is preferably carried out at a temperature between 400 ° C. and 1400 ° C.
- the particularly preferred reaction temperature is between 600 ° C and 1200 ° C.
- WF 6 is converted into W (OCH 3 ) 6 in an equilibrium reaction with volatile Si (OCH 3 ) 4 as ligand transfer agent.
- OCH 3 volatile Si
- Complete methoxylation is only possible by treating the partially fluorinated product with a methanolic NaOCH 3 solution.
- tungsten (VI) alkoxides can be prepared from the reaction of tungsten (VI) hexakis (dimethylamide) and the corresponding alcohol.
- the synthesis of the tungsten amide compound is according to Inorg. Chem. 1977, 16, 1791-1794 very complex and is therefore ruled out for an industrial process.
- Suitable reactors for carrying out the process according to the invention can be furnaces with an adjustable atmosphere or else gas phase reactors. Since the metal alkoxide compounds according to the invention can all be brought into the gas phase in a simple manner, a gas phase reactor according to DE-A 4 214 720 is also suitable. The choice of the reactor is determined by the requirements with regard to fine particle size and particle size distribution of the metal powder.
- a 0.5 molar solution of LiCl in methanol was electrolysed under argon protective gas in a flat ground reaction vessel which was provided with a steel cathode, an anode made of tungsten and a reflux condenser. It was electrolyzed with direct current and a current density of 200 mA / cm 2 . The electrolyte solution turned yellow-orange and began to boil shortly after the start of electrolysis.
- a solution of 50 g of NH 4 CI in 2000 ml of methanol was electrolysed under argon protective gas in a flat-ended reaction vessel which was provided with a steel cathode, an anode made of tantalum and a reflux condenser. It was electrolyzed with direct current and a current density of 200 mA / cm 2 .
- the electrolytic solution turned yellowish and began to boil shortly after the start of the electrolysis.
- Electrochemically produced tungsten ethoxide is purified by sublimation in a glass apparatus and then reacted with hydrogen in a tube furnace at 1000 ° C., equation (2).
- the tungsten metal powder was analyzed for impurities using GDMS (glow-discharge mass spectroscopy).
- Electrochemically produced tantalum methoxide is purified by distillation at 130 ° C. in a vacuum (0.3 mbar) in a glass apparatus and then reacted with hydrogen in a tube furnace at 1000 ° C., equation (3).
- the tantalum metal powder was analyzed for impurities using GDMS (glow-discharge mass spectroscopy).
- Electrochemically produced titanium ethoxide is purified by distillation at 104 ° C. in a vacuum (0.3 mbar) in a glass apparatus and then reacted with hydrogen in a tube furnace at 1000 ° C., equation (4).
- the titanium metal powder was analyzed for impurities using GDMS (glow-discharge mass sprectroscopy).
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Carbon And Carbon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4404747 | 1994-02-15 | ||
| DE4404747A DE4404747C2 (de) | 1994-02-15 | 1994-02-15 | Herstellung von Reinstmetallpulver aus Metallalkoxiden |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0667200A1 true EP0667200A1 (fr) | 1995-08-16 |
| EP0667200B1 EP0667200B1 (fr) | 1998-08-26 |
Family
ID=6510268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP95101419A Expired - Lifetime EP0667200B1 (fr) | 1994-02-15 | 1995-02-02 | Préparation de poudre de métal de haute pureté à partir d'alkoxydes de métal |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5711783A (fr) |
| EP (1) | EP0667200B1 (fr) |
| JP (1) | JPH07252511A (fr) |
| KR (1) | KR950031331A (fr) |
| CN (1) | CN1112467A (fr) |
| AT (1) | ATE170116T1 (fr) |
| CA (1) | CA2142254A1 (fr) |
| DE (2) | DE4404747C2 (fr) |
| IL (1) | IL112620A (fr) |
| RU (1) | RU2126735C1 (fr) |
| TW (1) | TW257706B (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100415A (en) * | 1998-03-16 | 2000-08-08 | Japan Pionics Co., Ltd. | Purified alkoxide and process for purifying crude alkoxide |
| RU2170647C1 (ru) * | 2000-11-02 | 2001-07-20 | Закрытое акционерное общество "ИНВЕСТ-Технологии" | Способ получения ультрадисперсного металлического порошка |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000067936A1 (fr) * | 1998-05-06 | 2000-11-16 | H.C. Starck, Inc. | Poudres metalliques obtenues par reduction d'oxides au moyen de magnesium gazeux |
| US5997612A (en) * | 1998-07-24 | 1999-12-07 | The Boc Group, Inc. | Pressure swing adsorption process and apparatus |
| RU2164194C2 (ru) * | 1999-05-11 | 2001-03-20 | Институт химии и технологии редких элементов и минерального сырья им. И.В. Тананаева Кольского научного центра РАН | Способ получения порошка вентильного металла |
| US6375704B1 (en) * | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
| DE10030387A1 (de) * | 2000-06-21 | 2002-01-03 | Starck H C Gmbh Co Kg | Kondensatorpulver |
| DE10231777A1 (de) * | 2002-07-13 | 2004-02-05 | Diehl Munitionssysteme Gmbh & Co. Kg | Verfahren zur Herstellung eines Wolfram-Basismaterials und Verwendung desselben |
| US7187396B2 (en) * | 2003-11-07 | 2007-03-06 | Engelhard Corporation | Low visibility laser marking additive |
| KR20070083557A (ko) | 2004-09-23 | 2007-08-24 | 엘리먼트 씩스 (프티) 리미티드 | 다결정 연마 물질 및 그 제조방법 |
| US7399335B2 (en) * | 2005-03-22 | 2008-07-15 | H.C. Starck Inc. | Method of preparing primary refractory metal |
| US7758668B1 (en) | 2006-04-18 | 2010-07-20 | Chemnano, Inc. | Process of manufacturing metallic nano-scale powders |
| RU2413011C1 (ru) * | 2009-12-01 | 2011-02-27 | Государственное образовательное учреждение высшего профессионального образования "Ангарская государственная техническая академия" (ГОУ ВПО "АГТА") | Плазмохимический реактор для обработки минеральных руд |
| RU2410446C1 (ru) * | 2009-12-01 | 2011-01-27 | Государственное образовательное учреждение высшего профессионального образования Ангарская государственная техническая академия (ГОУВПО АГТА) | Способ обработки минеральных руд |
| EP2870277B1 (fr) * | 2012-07-03 | 2021-04-14 | Enlighten Innovations Inc. | Appareil et procédé de production de métal dans une cellule électrolytique de nasicon |
| CN109396456B (zh) * | 2018-12-28 | 2024-02-13 | 西安赛隆金属材料有限责任公司 | 一种球形钨粉末的制备装置及方法 |
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| US4582696A (en) * | 1985-04-15 | 1986-04-15 | Ford Motor Company | Method of making a special purity silicon nitride powder |
| EP0197271A1 (fr) * | 1985-03-04 | 1986-10-15 | Kabushiki Kaisha Toshiba | Procédé de préparation de poudres très pures de molybdène ou de tungstène, ainsi que de leurs oxydes |
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| US3117833A (en) * | 1958-09-25 | 1964-01-14 | Fansteel Metallurgical Corp | Process of purifying and separating columbium and tantalum values from each other |
| US3640093A (en) * | 1969-03-10 | 1972-02-08 | Owens Illinois Inc | Process of converting metalorganic compounds and high purity products obtained therefrom |
| GB1307581A (en) * | 1970-05-05 | 1973-02-21 | Monsanto Chemicals | Production of alkoxides |
| JPS5785943A (en) * | 1980-11-18 | 1982-05-28 | Nishimura Watanabe Chiyuushiyutsu Kenkyusho:Kk | Recovering method for metal from fluorine compound |
| US4615736A (en) * | 1985-05-01 | 1986-10-07 | Allied Corporation | Preparation of metal powders |
| US4755369A (en) * | 1985-05-22 | 1988-07-05 | Research Development Corporation Of Japan | Production of ultrafine particles |
| JPS61275108A (ja) * | 1985-05-30 | 1986-12-05 | Mitsubishi Mining & Cement Co Ltd | 誘電体粉末の製造方法 |
| JPS63184306A (ja) * | 1986-09-22 | 1988-07-29 | Mitsui Toatsu Chem Inc | 強磁性金属粉末の安定化方法 |
| JPH0230706A (ja) * | 1988-07-19 | 1990-02-01 | Central Glass Co Ltd | β−タングステン粉末の製造法 |
| US5455223A (en) * | 1993-02-24 | 1995-10-03 | American Superconductor Corporation | Coated precursor powder for oxide superdonductors |
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1994
- 1994-02-15 DE DE4404747A patent/DE4404747C2/de not_active Expired - Fee Related
-
1995
- 1995-01-16 TW TW084100320A patent/TW257706B/zh active
- 1995-02-02 AT AT95101419T patent/ATE170116T1/de not_active IP Right Cessation
- 1995-02-02 DE DE59503295T patent/DE59503295D1/de not_active Expired - Fee Related
- 1995-02-02 EP EP95101419A patent/EP0667200B1/fr not_active Expired - Lifetime
- 1995-02-10 JP JP7045098A patent/JPH07252511A/ja active Pending
- 1995-02-10 CA CA002142254A patent/CA2142254A1/fr not_active Abandoned
- 1995-02-13 IL IL112620A patent/IL112620A/xx not_active IP Right Cessation
- 1995-02-14 KR KR1019950002665A patent/KR950031331A/ko not_active Ceased
- 1995-02-15 RU RU95101844A patent/RU2126735C1/ru active
- 1995-02-15 CN CN95101889A patent/CN1112467A/zh active Pending
-
1996
- 1996-07-11 US US08/678,095 patent/US5711783A/en not_active Expired - Fee Related
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| EP0197271A1 (fr) * | 1985-03-04 | 1986-10-15 | Kabushiki Kaisha Toshiba | Procédé de préparation de poudres très pures de molybdène ou de tungstène, ainsi que de leurs oxydes |
| US4582696A (en) * | 1985-04-15 | 1986-04-15 | Ford Motor Company | Method of making a special purity silicon nitride powder |
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| CHEMICAL ABSTRACTS, Columbus, Ohio, US; * |
| PATENT ABSTRACTS OF JAPAN * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100415A (en) * | 1998-03-16 | 2000-08-08 | Japan Pionics Co., Ltd. | Purified alkoxide and process for purifying crude alkoxide |
| RU2170647C1 (ru) * | 2000-11-02 | 2001-07-20 | Закрытое акционерное общество "ИНВЕСТ-Технологии" | Способ получения ультрадисперсного металлического порошка |
Also Published As
| Publication number | Publication date |
|---|---|
| DE59503295D1 (de) | 1998-10-01 |
| KR950031331A (ko) | 1995-12-18 |
| US5711783A (en) | 1998-01-27 |
| IL112620A (en) | 1997-09-30 |
| DE4404747C2 (de) | 1995-12-14 |
| JPH07252511A (ja) | 1995-10-03 |
| RU2126735C1 (ru) | 1999-02-27 |
| CN1112467A (zh) | 1995-11-29 |
| IL112620A0 (en) | 1995-05-26 |
| DE4404747A1 (de) | 1995-08-17 |
| EP0667200B1 (fr) | 1998-08-26 |
| CA2142254A1 (fr) | 1995-08-16 |
| RU95101844A (ru) | 1997-03-10 |
| TW257706B (fr) | 1995-09-21 |
| ATE170116T1 (de) | 1998-09-15 |
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