EP0761841A1 - Verfahren zur Herstellung einer Schicht - Google Patents

Verfahren zur Herstellung einer Schicht Download PDF

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Publication number
EP0761841A1
EP0761841A1 EP96112891A EP96112891A EP0761841A1 EP 0761841 A1 EP0761841 A1 EP 0761841A1 EP 96112891 A EP96112891 A EP 96112891A EP 96112891 A EP96112891 A EP 96112891A EP 0761841 A1 EP0761841 A1 EP 0761841A1
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EP
European Patent Office
Prior art keywords
fluorine
silicon oxide
film
oxide film
containing silicon
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EP96112891A
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English (en)
French (fr)
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EP0761841B1 (de
Inventor
Kazuo Semiconductor Process Lab Co. Ltd. Maeda
N. Semiconductor Process Lab Co. Ltd. Tokumasu
Yoshiaki Yuyama
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Semiconductor Process Laboratory Co Ltd
Canon Marketing Japan Inc
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Semiconductor Process Laboratory Co Ltd
Canon Marketing Japan Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Definitions

  • the present invention relates to a film forming method and, more particularly, a film forming method for forming a fluorine containing silicon oxide film in terms of a thermal CVD method.
  • interlayer insulating layer used for semiconductor devices are formed of SiO 2 film or SiO 2 -based film.
  • Such SiO 2 -based insulating film is of a relative dielectric constant of about 4.0 (measuring frequency of 1 MHz).
  • parasitic capacitance resides in any kind of semiconductor device. However, if a value of such parasitic capacitance is considerably large, either a crosstalk between the interconnection layers would occurs or delay would be caused in signal propagation time. In particular, if a multilayered structure is utilized in order to achieve high integration density of the semiconductor device, parasitic capacitance would be increased since overlapping areas or opposing areas between the interconnection layers are increased. Furthermore, since a space between the adjacent interconnection layers is narrowed if dimensions of the patterns are made fine, there are some cases where the space between adjacent interconnection layers become small rather than the space between the upper and lower interconnection layers. For this reason, the parasitic capacitance is increased. Therefore influence of the parasitic capacitance on the device characteristics cannot be ignored.
  • SiOB source organic compound having SiOB bond, for instance, tristrimethylsilylborate
  • the fluorine (F) - containing silicon oxide film may be formed by various ways, and technique for providing about 3.4 to 3.6 as the value of relative dielectric constant ( ⁇ ) is being investigated and developed. At all events, it is important to form the fluorine - containing silicon oxide film which is stable in quality.
  • the plasma CVD method is employed as the film forming method except for the method (1).
  • the silicon oxide films exhibit poor step coverage, so that they are not suitable to be filled into minute spaces.
  • ECR plasma CVD method is the most stable one of various plasma CVD methods, it is not fitted for mass production because of its large scaled equipment.
  • SiF(OC 2 H 5 ) 3 has Si-F bond originally as source material, but it is difficult to keep the bond in the plasma as it is and therefore it is hard to accomplish the silicon oxide film in which fluorine is contained properly by controlling fluorine density.
  • organic silane having Si-F bond is used as a source gas by the inventors.
  • This source gas is extremely easy to be decomposed, and thus hydrolysis and oxidation reaction of the source gas are caused at the normal temperature.
  • organic silane having no Si-F bond has to be added to the source gas in proper quantity.
  • the fluorine - containing silicon oxide film is formed by virtue of reaction of the source gas with ozone in the situation where a substrate is being heated. At this time, it is preferable that the substrate temperature is held in the range of 300 to 400 °C to accomplish proper deposition rate and good quality of the silicon oxide film.
  • relative dielectric constant can be controlled according to an amount of contained fluorine. As a rule, the more an amount of contained fluorine, the lower the relative dielectric constant. Since the fluorine - containing silicon oxide film is formed by thermal CVD method, it is superior in step coverage.
  • a film forming system which is used to form a fluorine - containing silicon oxide film according to an embodiment of the present invention will be explained at first hereinafter with reference to FIG.1.
  • FIG.1 is a schematic view showing a configuration of a thermal CVD apparatus comprising a reaction gas supplying section and a film forming section.
  • a wafer loading table 2 having a built-in heater therein and a gas discharging portion 3 are furnished with a film forming chamber 1.
  • An exhaust port 4 and a gas introducing port 5 are provided in the film forming chamber 1.
  • Reaction gas is introduced from the gas introducing port 5 into the film forming chamber 1 via a pipe 7 while unnecessary reaction gas is exhausted from the exhaust port 4 to the outside of the film forming chamber 1.
  • Mixed reaction gas is supplied to the pipe 7 from the reaction gas supplying portion.
  • the reaction gas supplying portion is equipped with a plurality of branch pipes which are connected to respective gas sources corresponding to gas to be used.
  • the branch pipes comprise a first branch pipe for supplying nitrogen gas, a second branch pipe for supplying ozone (O 3 ) containing oxygen gas, a third branch pipe for supplying organic silane with Si-F bond, e.g., fluorotriethoxysilane (F-TES), and a fourth branch pipe for supplying organic silane without Si-F bond, e.g., tetraethoxysilane (TEOS).
  • F-TES fluorotriethoxysilane
  • TEOS tetraethoxysilane
  • a port for introducing nitrogen gas a mass flow controller (MFC) 8a, and a switching valve 9 which may cut off/introduce gas flow.
  • MFC mass flow controller
  • a switching valve 9 which may cut off/introduce gas flow.
  • MFC mass flow controller
  • the ozone generating unit 10 may convert oxygen gas into ozone in proper quantity so as to adjust the ozone density in oxygen gas.
  • Nitrogen gas including F-TES in virtue of bubbling of the carrier gas (nitrogen gas) can be supplied to the pipe 7.
  • a mass flow controller (MFC) 8d In the middle of the fourth branch pipe between a port for introducing carrier gas (nitrogen gas) and the pipe 7 are interposed a mass flow controller (MFC) 8d, a container 14 containing TEOS solution 16 therein, a heater 15 for heating the TEOS solution 16, and switching valves 9 which may cut off/introduce gas flow. Nitrogen gas including TEOS in virtue of bubbling of the carrier gas (nitrogen gas) can be supplied to the pipe 7.
  • FIG.1 there will be explained a method for forming the fluorine - containing silicon oxide film according to the embodiment of the present invention based on an atmospheric pressure CVD method.
  • a wafer 6 is placed on the wafer loading table 2 positioned at the bottom of the film forming chamber 1 and then heated.
  • the temperature of the wafer 6 is varied film by film within the range of 100 to 350 °C.
  • the F-TES solution 13 is heated and then held at the temperature of 40 °C.
  • the TEOS solution 16 is heated and then held at the temperature of 65 °C.
  • nitrogen gas is supplied at flow rate of 18 SLM to the pipe 7 via the first branch pipe
  • oxygen gas including ozone by 2.4 % is supplied at flow rate of 7.5 SLM to the pipe 7 via the second branch pipe
  • nitrogen gas including F-TES is supplied to the pipe 7 via the third branch pipe
  • nitrogen gas including TEOS is supplied at flow rate of 2.0 SLM to the pipe 7 via the fourth branch pipe.
  • FIG.3 shows a correlation of the deposition rate with the deposition temperature.
  • An ordinate represents the deposition rate (nm/min) in linear scale while an abscissa represents the deposition temperature (°C) in linear scale.
  • the flow rate of F-TES is kept constant at 2.0 SLM. As shown in FIG.3, the deposition rate assumes its maximum value of about 250 nm/min at almost 250 °C.
  • FIG.5 shows a relationship between the refractive index of the fluorine - containing silicon oxide film obtained and the deposition temperature.
  • An ordinate represents the refractive index in linear scale while an abscissa represents the deposition temperature (°C) in linear scale.
  • the flow rate of F-TES is maintained constant at 2.0 SLM.
  • the refractive index is about 1.385 at the deposition temperature of 180 °C.
  • the refractive index is then increased linearly with the increase in the deposition temperature.
  • the refractive index becomes about 1.425 at the substrate temperature of 350 °C.
  • FIG. 4 A relationship between the flow rate of F-TES and the deposition rate is shown in FIG. 4.
  • An ordinate represents the deposition rate (nm/min) in linear scale while an abscissa represents the flow rate of F-TES (SLM) in linear scale.
  • the substrate temperature is held constant at 280 °C.
  • the deposition rate is increased linearly with the increase in flow rate of F-TES, and the deposition rate reaches about 230 nm/min at the flow rate of F-TES of 3.0 SLM.
  • FIG.6 shows a relationship between the refractive index of the fluorine - containing silicon oxide film formed and the flow rate of F-TES.
  • An ordinate represents the refractive index in linear scale while an abscissa represents the flow rate of F-TES (SLM) in linear scale.
  • the substrate temperature is kept constant at 280 °C.
  • relative dielectric constant can be controlled according to an amount of contained fluorine. In general, the more an amount of contained fluorine, the lower the relative dielectric constant. Since the fluorine - containing silicon oxide film is formed by thermal CVD method, it is superior in step coverage.
  • the wafer 6 on which the fluorine - containing silicon oxide film is formed is placed on the wafer loading table 18 of the plasma processing apparatus.
  • the wafer 6 is then heated and thereafter maintained at 370 °C.
  • FIG.7 the measured results of the infrared absorption characteristics after plasma irradiation are shown in FIG.7.
  • An ordinate represents the absorption intensity in arbitrary unit while an abscissa represents the number of wave (cm -1 ) in linear scale.
  • Three kinds of measured results i.e., results obtained immediately after film formation, after plasma irradiation for 180 sec, and 300 sec, are compared with each other in FIG.7.
  • the relative dielectric constant ⁇ can be lowered by enhancing a mixing ratio of the organic silane including fluorine to the organic silane including no fluorine to show the value of 3.2 to 3.4 after the plasma irradiation is carried out. Even in the event that the mixing ratio is enhanced, the silicon oxide film still has the large relative dielectric constant ⁇ unless the plasma irradiation is carried out.
  • the process gas using oxygen gas is of advantage to the small relative dielectric constant rather than that using nitrogen gas.
  • the relative dielectric constant may be lowered much more and advantage derived from included fluorine may be enhanced much more if the plasma process is carried out after film formation.
  • fluorotriethoxysilane which is fluoroalkoxysilane has been used as organic silane having Si-F bond.
  • TEOS or TES which is alkoxysilane has been used in the above embodiment as organic silane having no Si-F bond.
  • R is alkyl group, aryl group, or their derivative
  • the fluorine - containing silicon oxide film is formed by thermal CVD method using organic silane having Si-F bond as a source gas.
  • the relative dielectric constant of the fluoride - containing silicon oxide film formed as mentioned above can be controlled by adjusting an amount of contained fluorine. In general, the more an amount of contained fluorine, the lower the relative dielectric constant. Since the fluorine - containing silicon oxide film is formed by thermal CVD method, it is superior in step coverage.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
EP96112891A 1995-08-18 1996-08-09 Verfahren zur Herstellung einer Schicht Expired - Lifetime EP0761841B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP21089695 1995-08-18
JP7210896A JP3061255B2 (ja) 1995-08-18 1995-08-18 成膜方法
JP210896/95 1995-08-18

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EP0761841A1 true EP0761841A1 (de) 1997-03-12
EP0761841B1 EP0761841B1 (de) 2002-06-12

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US (1) US5800877A (de)
EP (1) EP0761841B1 (de)
JP (1) JP3061255B2 (de)
KR (1) KR100262053B1 (de)
DE (1) DE69621723T2 (de)

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US5908672A (en) * 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
WO2000051174A1 (en) * 1999-02-26 2000-08-31 Trikon Holdings Limited A method of processing a polymer layer
DE19960092A1 (de) * 1999-12-14 2001-07-12 Bosch Gmbh Robert Beschichtungsverfahren
EP1032722A4 (de) * 1997-11-17 2001-09-12 Univ Princeton Niederdruckdampfphasenbeschichtung organischer dünner filme
EP0934433B1 (de) * 1996-02-20 2004-04-14 Lam Research Corporation Verfahren zur abscheidung von fluor-dotierten siliziumdioxidschichten
US7309662B1 (en) 1999-06-26 2007-12-18 Aviza Europe Limited Method and apparatus for forming a film on a substrate
US9502234B2 (en) 2010-02-04 2016-11-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films

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US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6593247B1 (en) * 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US6274292B1 (en) 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6153509A (en) * 1998-07-01 2000-11-28 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
US6383951B1 (en) * 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6281100B1 (en) 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US6268282B1 (en) * 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6727190B2 (en) * 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
US6323101B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
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JP4515550B2 (ja) * 1999-03-18 2010-08-04 東芝モバイルディスプレイ株式会社 薄膜形成方法
US7067414B1 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US6440860B1 (en) 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
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US6531398B1 (en) 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
KR20020051456A (ko) * 2000-12-22 2002-06-29 황 철 주 저온환경의 화학기상증착 방법
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6732551B2 (en) 2001-05-04 2004-05-11 Corning Incorporated Method and feedstock for making silica
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KR970013003A (ko) 1997-03-29
DE69621723D1 (de) 2002-07-18
DE69621723T2 (de) 2002-11-28
JP3061255B2 (ja) 2000-07-10
KR100262053B1 (ko) 2000-07-15

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