EP0949665A3 - Transistor bipolaire à haute vitesse et à faible capacité parasite ainsi que sa méthode de fabrication - Google Patents
Transistor bipolaire à haute vitesse et à faible capacité parasite ainsi que sa méthode de fabrication Download PDFInfo
- Publication number
- EP0949665A3 EP0949665A3 EP99106884A EP99106884A EP0949665A3 EP 0949665 A3 EP0949665 A3 EP 0949665A3 EP 99106884 A EP99106884 A EP 99106884A EP 99106884 A EP99106884 A EP 99106884A EP 0949665 A3 EP0949665 A3 EP 0949665A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- region
- bipolar transistor
- fabricating
- high speed
- parasitic capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title abstract 4
- 230000003071 parasitic effect Effects 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
- H10D62/138—Pedestal collectors
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09507598A JP3186691B2 (ja) | 1998-04-07 | 1998-04-07 | 半導体装置及びその形成方法 |
| JP9507598 | 1998-04-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0949665A2 EP0949665A2 (fr) | 1999-10-13 |
| EP0949665A3 true EP0949665A3 (fr) | 2000-06-28 |
Family
ID=14127862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP99106884A Withdrawn EP0949665A3 (fr) | 1998-04-07 | 1999-04-07 | Transistor bipolaire à haute vitesse et à faible capacité parasite ainsi que sa méthode de fabrication |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6436781B2 (fr) |
| EP (1) | EP0949665A3 (fr) |
| JP (1) | JP3186691B2 (fr) |
| KR (1) | KR100294129B1 (fr) |
| CN (1) | CN1231506A (fr) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19957113A1 (de) | 1999-11-26 | 2001-06-07 | Infineon Technologies Ag | Verfahren zur Herstellung eines aktiven Transistorgebietes |
| JP2001338930A (ja) * | 2000-05-29 | 2001-12-07 | Nec Corp | 半導体装置および半導体製造方法 |
| US6688335B2 (en) | 2000-07-14 | 2004-02-10 | Suzuki Sogyo Co., Ltd. | Liquid hammer prevention device |
| US6534372B1 (en) * | 2000-11-22 | 2003-03-18 | Newport Fab, Llc | Method for fabricating a self-aligned emitter in a bipolar transistor |
| JP2002206689A (ja) | 2000-11-24 | 2002-07-26 | Suzuki Sogyo Co Ltd | 配管直列型液撃防止器 |
| US6465870B2 (en) * | 2001-01-25 | 2002-10-15 | International Business Machines Corporation | ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region |
| US6770952B2 (en) * | 2001-04-30 | 2004-08-03 | Texas Instruments Incorporated | Integrated process for high voltage and high performance silicon-on-insulator bipolar devices |
| US20020177253A1 (en) * | 2001-05-25 | 2002-11-28 | International Business Machines Corporation | Process for making a high voltage NPN Bipolar device with improved AC performance |
| US6861324B2 (en) * | 2001-06-15 | 2005-03-01 | Maxim Integrated Products, Inc. | Method of forming a super self-aligned hetero-junction bipolar transistor |
| DE10134089A1 (de) * | 2001-07-13 | 2003-01-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines Bipolartransistors mit Polysiliziumemitter |
| DE10160509A1 (de) * | 2001-11-30 | 2003-06-12 | Ihp Gmbh | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
| DE10160511A1 (de) * | 2001-11-30 | 2003-06-12 | Ihp Gmbh | Bipolarer Transistor |
| KR100437494B1 (ko) * | 2002-03-25 | 2004-06-25 | 주식회사 케이이씨 | 트랜지스터 및 그 제조 방법 |
| JP3761162B2 (ja) * | 2002-03-27 | 2006-03-29 | ローム株式会社 | バイポーラトランジスタ及びこれを用いた半導体装置 |
| US7521733B2 (en) * | 2002-05-14 | 2009-04-21 | Infineon Technologies Ag | Method for manufacturing an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor |
| US6869854B2 (en) * | 2002-07-18 | 2005-03-22 | International Business Machines Corporation | Diffused extrinsic base and method for fabrication |
| US6911716B2 (en) * | 2002-09-09 | 2005-06-28 | Lucent Technologies, Inc. | Bipolar transistors with vertical structures |
| JP2004111852A (ja) | 2002-09-20 | 2004-04-08 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| DE10254663B4 (de) * | 2002-11-22 | 2005-08-04 | Austriamicrosystems Ag | Transistor mit niederohmigem Basisanschluß und Verfahren zum Herstellen |
| DE10306597B4 (de) * | 2003-02-17 | 2005-11-17 | Infineon Technologies Ag | Verfahren zum Herstellen einer Halbleiterstruktur mit erhöhter Durchbruchspannung durch tieferliegenden Subkollektorabschnitt |
| US7541624B2 (en) * | 2003-07-21 | 2009-06-02 | Alcatel-Lucent Usa Inc. | Flat profile structures for bipolar transistors |
| DE10358046B4 (de) * | 2003-12-05 | 2010-06-17 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Bipolartransistor mit erhöhtem Basisanschlussgebiet und Verfahren zu seiner Herstellung |
| US7084485B2 (en) * | 2003-12-31 | 2006-08-01 | Freescale Semiconductor, Inc. | Method of manufacturing a semiconductor component, and semiconductor component formed thereby |
| US7075126B2 (en) * | 2004-02-27 | 2006-07-11 | International Business Machines Corporation | Transistor structure with minimized parasitics and method of fabricating the same |
| US20060170074A1 (en) * | 2004-12-28 | 2006-08-03 | Yoshikazu Ibara | Semiconductor device |
| JP2006210790A (ja) * | 2005-01-31 | 2006-08-10 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US20080217742A1 (en) * | 2007-03-09 | 2008-09-11 | International Business Machines Corporation | Tailored bipolar transistor doping profile for improved reliability |
| US7750371B2 (en) * | 2007-04-30 | 2010-07-06 | International Business Machines Corporation | Silicon germanium heterojunction bipolar transistor structure and method |
| KR101126933B1 (ko) * | 2008-09-02 | 2012-03-20 | 주식회사 동부하이텍 | 폴리에미터형 바이폴라 트랜지스터, ｂｃｄ 소자, 폴리에미터형 바이폴라 트랜지스터의 제조 방법 및 ｂｃｄ 소자의 제조 방법 |
| CN101714553B (zh) * | 2008-09-29 | 2011-05-11 | 凹凸电子（武汉）有限公司 | 单元晶体管、集成电路及显示系统 |
| CN101728263B (zh) * | 2008-10-24 | 2011-07-06 | 中芯国际集成电路制造(上海)有限公司 | 控制源/漏结电容的方法和pmos晶体管的形成方法 |
| US8735289B2 (en) * | 2010-11-29 | 2014-05-27 | Infineon Technologies Ag | Method of contacting a doping region in a semiconductor substrate |
| CN102543725A (zh) * | 2010-12-20 | 2012-07-04 | 上海华虹Nec电子有限公司 | 高速锗硅异质结双极晶体管的制造方法 |
| CN102543726B (zh) * | 2010-12-20 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | 高压锗硅异质结双极晶体管的制造方法 |
| CN103137675B (zh) * | 2011-11-23 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 具有高击穿电压的锗硅异质结双极晶体管结构及其制作方法 |
| CN102651384B (zh) * | 2012-05-16 | 2014-09-17 | 清华大学 | 嵌入式外延外基区双极晶体管及其制备方法 |
| CN103000679B (zh) * | 2012-12-20 | 2015-05-06 | 清华大学 | 低电阻多晶连接基区全自对准双极晶体管及其制备方法 |
| CN103022110B (zh) * | 2012-12-20 | 2015-07-29 | 清华大学 | 金属硅化物抬升外基区全自对准双极晶体管及其制备方法 |
| NL2018115B1 (en) | 2017-01-03 | 2018-07-25 | Univ Delft Tech | Active semiconductor device with linearized depletion capacitance |
| US11563084B2 (en) | 2019-10-01 | 2023-01-24 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor |
| US11404540B2 (en) | 2019-10-01 | 2022-08-02 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor |
| US11355585B2 (en) | 2019-10-01 | 2022-06-07 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor |
| CN111739939B (zh) * | 2020-07-06 | 2024-12-06 | 重庆邮电大学 | 一种高频硅锗异质结双极晶体管及其制造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0425242A1 (fr) * | 1989-10-24 | 1991-05-02 | Sony Corporation | Structure de transistor bipolaire |
| EP0762511A1 (fr) * | 1995-08-31 | 1997-03-12 | Nec Corporation | Transistor bipolaire et méthode de fabrication |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH021934A (ja) | 1988-06-10 | 1990-01-08 | Fujitsu Ltd | バイポーラ半導体装置の製造方法 |
| JP3254691B2 (ja) | 1990-08-31 | 2002-02-12 | 日本電気株式会社 | バイポーラトランジスタの製造方法 |
| JPH06216145A (ja) | 1992-01-28 | 1994-08-05 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH05267317A (ja) | 1992-03-18 | 1993-10-15 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2842042B2 (ja) | 1992-05-08 | 1998-12-24 | 日本電気株式会社 | 半導体装置 |
| JP2551364B2 (ja) * | 1993-11-26 | 1996-11-06 | 日本電気株式会社 | 半導体装置 |
| JP2606141B2 (ja) * | 1994-06-16 | 1997-04-30 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP3562284B2 (ja) | 1998-01-13 | 2004-09-08 | 株式会社日立製作所 | バイポーラトランジスタおよびその製造方法 |
| JP3257523B2 (ja) * | 1998-10-07 | 2002-02-18 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1998
- 1998-04-07 JP JP09507598A patent/JP3186691B2/ja not_active Expired - Lifetime
-
1999
- 1999-04-06 CN CN99105440A patent/CN1231506A/zh active Pending
- 1999-04-06 KR KR1019990011870A patent/KR100294129B1/ko not_active Expired - Fee Related
- 1999-04-07 EP EP99106884A patent/EP0949665A3/fr not_active Withdrawn
-
2001
- 2001-02-26 US US09/791,800 patent/US6436781B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0425242A1 (fr) * | 1989-10-24 | 1991-05-02 | Sony Corporation | Structure de transistor bipolaire |
| EP0762511A1 (fr) * | 1995-08-31 | 1997-03-12 | Nec Corporation | Transistor bipolaire et méthode de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| US20010009793A1 (en) | 2001-07-26 |
| JPH11297708A (ja) | 1999-10-29 |
| EP0949665A2 (fr) | 1999-10-13 |
| KR19990082963A (ko) | 1999-11-25 |
| CN1231506A (zh) | 1999-10-13 |
| JP3186691B2 (ja) | 2001-07-11 |
| KR100294129B1 (ko) | 2001-06-15 |
| US6436781B2 (en) | 2002-08-20 |
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Legal Events
| Date | Code | Title | Description |
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| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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| 17P | Request for examination filed |
Effective date: 20000524 |
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| AKX | Designation fees paid |
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| RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: NEC ELECTRONICS CORPORATION |
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| 17Q | First examination report despatched |
Effective date: 20060904 |
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| STAA | Information on the status of an ep patent application or granted ep patent |
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| 18W | Application withdrawn |
Effective date: 20070118 |