EP0976184A2 - Dispositif laser - Google Patents

Dispositif laser

Info

Publication number
EP0976184A2
EP0976184A2 EP98931917A EP98931917A EP0976184A2 EP 0976184 A2 EP0976184 A2 EP 0976184A2 EP 98931917 A EP98931917 A EP 98931917A EP 98931917 A EP98931917 A EP 98931917A EP 0976184 A2 EP0976184 A2 EP 0976184A2
Authority
EP
European Patent Office
Prior art keywords
laser
laser device
diodes
laser diodes
waveguide structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98931917A
Other languages
German (de)
English (en)
Inventor
Gustav MÜLLER
Karl-Heinz Schlereth
Bruno Acklin
Johann Luft
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of EP0976184A2 publication Critical patent/EP0976184A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/0624—Controlling other output parameters than intensity or frequency controlling the near- or far field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Definitions

  • the invention relates to a laser device with at least ⁇ least a laser diode row.
  • Laser diode arrays are for example tronic from R. Paul, Optoelek ⁇ semiconductor devices, Teubner study scripts, 2nd Edition, BG Teubner Stuttgart 1992, pages 205,206 known. Such laser diode arrays achieve high radiation powers, high radiation densities and efficiencies.
  • IOW-lOkW powers are required on the workpiece to be irradiated with power densities between 0.1 and 10 MW / cm 2 .
  • solid-state lasers eg Nd: YAG, (7) are currently preferred.
  • Such two-stage systems which have to be pumped optically with the aid of flash lamps or semiconductor lasers, are technically complex and achieve conversion efficiencies of only 2 to 15%.
  • lamp-pumped systems are very maintenance-intensive.
  • Diode lasers achieve the necessary power densities, but the maximum power in a spatially coherent mode is only approx. 0.2W or approx. 1W in combination with semiconductor amplifiers.
  • the object of the present invention is therefore to develop a laser device with which an increased maximum power can be achieved in a spatially coherent mode.
  • This object is achieved by means of a laser device with a laser diode line which connects a plurality of side by side ordered mutually incoherent, ie laterally uncoupled laser diodes, and an external resonator in which the external resonator has a passive planar waveguide structure for coupling the modes of the individual laser diodes.
  • This laser device advantageously uses uncoupled laser diodes (preferably single-mode laser diodes) which are very stable.
  • the passive planar waveguide structure can be produced monolithically on a single mounting surface (which can be cooled during operation), as a result of which both a high degree of adjustment accuracy and, particularly because of the uniform temperature distribution and temperature stability, high stability the waveguide is reached.
  • the waveguide structure is preferably implemented in a planar hybrid waveguide technology (eg Si0 2 on Si, diffused, ion-exchanged, deposited glass).
  • planar lenses and lattice structures can be easily applied to the mounting surface in addition to the waveguide structure.
  • the laser diode array has single-mode laser diodes and an optical device with branched waveguides is provided. Laser radiation from the individual laser diodes can be coupled into this.
  • the optical arrangement guides the laser radiation of the individual laser diodes arranged next to one another into a laser beam that is compared to the number of laser diodes. smaller number, in particular in a single username and password, etc.
  • the laser diode array has multimode laser diodes, in particular broad-strip laser diodes, and also an optical device with branched waveguides, into which laser radiation from the individual laser diodes can be coupled and which converts this laser radiation into a smaller number than the number of laser diodes. in particular merges into a single output waveguide.
  • the monomode waveguides At the ends facing the laser diode array, the monomode waveguides have taper structures which convert the laser radiation of the individual laser diodes as adiabatically as possible into the respectively assigned monomode waveguide. Arrays of multi-mode broad-strip lasers advantageously allow very high area power densities.
  • the optical device has a preferably binary tree-like branching structure.
  • N 1 branching structure
  • the or the output waveguides additionally have a DFB (Distributed Feed Back) grating structure for the longitudinal mode selection.
  • DFB Distributed Feed Back
  • the waveguide structure can advantageously be designed as a multimode interference filter (MMI in planar technology).
  • MMI multimode interference filter
  • the invention described above enables a compact and, in particular, cooling-technically advantageous realization of power laser diodes with spatially (and temporally) coherent output and thus the highest power densities, e.g. B. for the ma- material processing, printer technology and medical applications.
  • the planar optical resonator coherently couples the emission of the individual emitters (laser diodes) into a monomode waveguide at the output of the resonator.
  • FIGS. 1 to 8. 1 shows a schematic illustration of a laser diode array in an external resonator
  • FIG. 2 shows a schematic illustration of a laser diode array in an external resonator with a device for mode filtering
  • FIG. 3 shows a schematic illustration of a laser device according to a first exemplary embodiment
  • FIG. 4 shows a schematic illustration of a laser device according to a second exemplary embodiment
  • FIG. 5 shows a schematic illustration of a laser device according to a third exemplary embodiment
  • FIG. 6 shows a schematic illustration of a laser device according to a fourth exemplary embodiment
  • Figure 7 is a schematic representation of a laser device according to a fifth embodiment and Figure 8 is a schematic representation of a laser device according to a sixth embodiment.
  • a laser diode array 1, z. B. a power semiconductor laser diode array, which is provided only on one resonator side with a resonator mirror layer, arranged in an external optical resonator.
  • the external optical resonator can be implemented using free beam technology or planar waveguide technology and optionally with a ner phase plate for correcting the phase fronts.
  • the external optical resonator for mode selection is provided with a mode diaphragm (for example a monomode fiber), which can be implemented either in the resonator or in connection with a resonator mirror.
  • a mode diaphragm for example a monomode fiber
  • a single-mode laser diode array 1 is coupled to a passive single-mode waveguide plate 2.
  • the single-mode waveguide plate 2 has a passive planar single-mode waveguide branching structure 6 m in the form of a binary branching tree composed of single-mode waveguides 7, which, starting from a single output waveguide 4 to the laser diode array 1 hm m, splits a number of single-mode waveguides 7, the number of which corresponds to the individual laser diodes of the laser diode array 1.
  • the laser beams of the individual laser diodes of the laser diode array 1 arranged next to one another are coherently coupled to a single output waveguide 4 by means of a plurality of binary branches 3 m.
  • a multimode laser diode array 1 is likewise connected to a passive single-mode
  • Waveguide plate 2 coupled to a passive planar single-mode waveguide branching structure 6, which corresponds in principle to that of Figure 3.
  • the single-mode waveguides each have a taper structure 5 which transfers the emitted laser radiation from the associated individual laser diode m to the single-mode waveguide 7 assigned to them.
  • the starting point is Waveguide 4 additionally arranged a DFB grating structure, whereby a single-mode operation is achieved.
  • the exemplary embodiment of FIG. 6 has a multimode interference filter plate 8 instead of the waveguide plate 2.
  • the waveguides additionally have phase shifters 10 and contain the
  • the resonator has at least one absorbent medium 11 for mode selection.
  • These two components, phase shifter 10 and absorbing medium 11, can be used completely independently of one another, so that optionally only one of the two or both components can be implemented.
  • FIG. 8 has curved, single-mode waveguides 7 for mode selection, which bring the laser radiation onto several or, as shown in the figure, onto a single output waveguide 4.
  • the waveguides 7 and / or the laser diodes are widened by adiabatic taper and / or the widened coupling point is inclined to the optical axis of the Laser diodes arranged.
  • the optical resonator has a phase plate or individually adjustable planar-optical phase shifters on the single-mode waveguides or the laser diodes for the correction of phase fronts.
  • the laser diode array 1 and the passive planar waveguide structure are advantageously monolithically integrated.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Radiation-Therapy Devices (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un dispositif laser comportant au moins un réseau de diodes laser présentant une pluralité de diodes laser adjacentes. Ce dispositif laser comprend un résonateur externe permettant le couplage des modes des diodes laser individuelles.
EP98931917A 1997-04-18 1998-04-14 Dispositif laser Withdrawn EP0976184A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19716422 1997-04-18
DE19716422 1997-04-18
PCT/DE1998/001053 WO1998048495A2 (fr) 1997-04-18 1998-04-14 Dispositif laser

Publications (1)

Publication Number Publication Date
EP0976184A2 true EP0976184A2 (fr) 2000-02-02

Family

ID=7827025

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98931917A Withdrawn EP0976184A2 (fr) 1997-04-18 1998-04-14 Dispositif laser

Country Status (4)

Country Link
EP (1) EP0976184A2 (fr)
CN (1) CN1252901A (fr)
CA (1) CA2286774A1 (fr)
WO (1) WO1998048495A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10019826A1 (de) * 2000-04-20 2001-10-31 Infineon Technologies Ag Laseranordnung
US6580850B1 (en) 2000-11-24 2003-06-17 Applied Wdm, Inc. Optical waveguide multimode to single mode transformer
US6668003B2 (en) * 2002-02-12 2003-12-23 Quintessence Photonics Corporation Laser diode array with an in-phase output
DE102004038283B4 (de) * 2004-08-03 2008-04-03 Forschungsverbund Berlin E.V. Optoelektronisches Element und Verfahren zur kohärenten Kopplung von aktiven Bereichen optoelektronischer Elemente
CN106454648B (zh) * 2016-07-15 2019-07-02 南京大学 一种声波导
CN106338800B (zh) * 2016-10-31 2018-06-12 华中科技大学 一种用于光纤与芯片间光信号传输的水平耦合器
JP7302430B2 (ja) * 2019-10-24 2023-07-04 富士通株式会社 波長可変光源、これを用いた光伝送装置、及び波長可変光源の制御方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578791A (en) * 1982-12-20 1986-03-25 Trw Inc. High-power injection laser diode structure
US4878724A (en) * 1987-07-30 1989-11-07 Trw Inc. Electrooptically tunable phase-locked laser array
US5023882A (en) * 1990-05-07 1991-06-11 Xerox Corporation Phased locked arrays with single lobe output beam
DE4123858C1 (en) * 1991-07-18 1992-12-03 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De Semiconductor laser array stabilising arrangement - provides fibre-shaped reflectors so that radiation characteristic extends as ray along X=axis
JPH07168040A (ja) * 1993-12-14 1995-07-04 Nippon Steel Corp 半導体レーザー集光装置
DE69526061D1 (de) * 1994-12-22 2002-05-02 Ceramoptec Gmbh Lasersystem für hohe Leistungsdichten
US5513196A (en) * 1995-02-14 1996-04-30 Deacon Research Optical source with mode reshaping

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9848495A3 *

Also Published As

Publication number Publication date
CN1252901A (zh) 2000-05-10
CA2286774A1 (fr) 1998-10-29
WO1998048495A2 (fr) 1998-10-29
WO1998048495A3 (fr) 1999-01-28

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