EP0977182A2 - Magnetisches Speichermedium aus Nanopartikeln - Google Patents

Magnetisches Speichermedium aus Nanopartikeln Download PDF

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Publication number
EP0977182A2
EP0977182A2 EP99305758A EP99305758A EP0977182A2 EP 0977182 A2 EP0977182 A2 EP 0977182A2 EP 99305758 A EP99305758 A EP 99305758A EP 99305758 A EP99305758 A EP 99305758A EP 0977182 A2 EP0977182 A2 EP 0977182A2
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EP
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Prior art keywords
particles
storage medium
magnetic storage
set forth
magnetic
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EP99305758A
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English (en)
French (fr)
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EP0977182A3 (de
EP0977182B1 (de
Inventor
Charles T. IBM United Kingdom Ltd. Black
Stephen M. IBM United Kingdom Ltd. Gates
Christopher B. IBM United Kingdom Ltd. Murray
Shouheng IBM United Kingdom Ltd. Sun
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
    • G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
    • G11B5/712—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the surface treatment or coating of magnetic particles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0045—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use
    • H01F1/0054—Coated nanoparticles, e.g. nanoparticles coated with organic surfactant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0045—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use
    • H01F1/0063—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use in a non-magnetic matrix, e.g. granular solids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256—Heavy metal or aluminum or compound thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256—Heavy metal or aluminum or compound thereof
    • Y10T428/257—Iron oxide or aluminum oxide

Definitions

  • the present invention relates to a magnetic storage medium of very high information bit storage density. More particularly, the invention relates to a magnetic storage medium utilizing magnetic nanoparticles to form a layer on a substrate.
  • Patterning a substrate is critical to fabrication of integrated circuits and data storage media.
  • the limitations of conventional lithographic patterning for dimensions below 0.1 micron ( 100 nm.) are well known, and are described in "Lithography for ULSI” , by S. Okazaki, in a review paper ( p. 18, vol. 2440 , Proceedings of SPIE ).
  • Optical lithography with a light source in the deep ultra-violet (“DUV”) is expected to serve in circuit and media fabrication for feature sizes down to about 0.05 micron (50 nm), but not for smaller sizes.
  • DUV deep ultra-violet
  • DUV optical lithography is currently anticipated to be extended to lateral dimensions of ⁇ 50 nm, but such extension is not certain and may be expensive.
  • X-ray lithography and Extreme UV lithography are being considered but both require enormous capital investments (both for the radiation sources and the supporting optical systems).
  • Direct write systems including electron beam and scanning probe based lithography are in development, but the serial nature of the pattering process makes these prohibitively slow for manufacturing.
  • Microcontact printing and nano-imprint lithography are new patterning techniques which hold some promise in and around 50 nm feature sizes but these methods are not well proven at the present. It would be desirable to have an inexpensive, large area, method for lateral patterning that does not require lithography, and that is suitable for feature sizes below 50 nm.
  • magnetic storage media for example tapes and disks having coatings of magnetic particles thereon
  • a number of difficulties prevent attainment of high densities.
  • the usual coatings of magnetic particles are applied on flexible media, wide variations in individual particle diameters raise the minimum information bit storage size, and thus decrease the attainable areal information bit storage density.
  • conventional rigid magnetic storage media sometimes called 'hard drive" disks
  • magnetic films are often applied by sputter deposition. The resultant broad distribution of grain sizes and inter-granular spacings creates both low effective areal bit densities and undesirably low signal-to-noise ratios..
  • the present invention therefore provides a magnetic storage medium as claimed in claim 1.
  • the medium includes a layer which comprises a multilayer formed of substantially equally spaced-apart particles disposed at a plurality of distances from the surface of the substrate.
  • a multilayer comprises a first monolayer of particles having the claimed coating to maintain them in spaced-apart relationship and a second monolayer of particles disposed over the claimed coating.
  • an affinity layer may be disposed between the magnetic particles and in a selected pattern over at least part of the surface of the substrate, the affinity layer being composed of an affinity material adapted to preferentially attract and retain said particles in the aforesaid selected pattern over the substrate surface.
  • an affinity material may comprise bi-functional molecules which can be expressed generally in the form X-R-Y where X and Y are the active head groups and R is a hydrocarbon or fluorocarbon chain preferably containing 3-22 carbon atoms.
  • the chemical functional groups X and Y may be the same although they are generally not, because the substrate surface and the nanoparticle surface are generally comprised of different materials.
  • affinity layer is trismethoxysilylpropane thiol, which may be expressed as (CH3O)3Si-CH2-CH2-CH2-SH, which selectively binds noble metal coated nanocrystals to silicon oxide surfaces.
  • substantially uniform diameter shall be understood to mean that the magnetic particles have diameters characterized by a standard deviation of less than 10% of their average.
  • the present invention also provides a method of forming a magnetic storage medium according to claim 13.
  • Figure 1 is a transmission electron micrograph (TEM) photo of an ordered monolayer of Co particles, each black dot being a single 8 nm. diameter Co particle, with an inset showing an electron diffraction pattern from the ordered monolayer (not only from a single particle).
  • TEM transmission electron micrograph
  • Figure 2 shows the general steps of a fabrication method for forming a magnetic storage medium of the present invention on a substrate.
  • Figure 3 shows a plan view of the magnetic storage medium of Figure 2.
  • Figure 4 is a sectional view of a magnetic storage medium based on a multilayer of monodisperse nm-scale Co particles.
  • Figure 5 is a sectional view of an alternative magnetic storage medium based on two ordered monolayers of monodisperse nm-scale Co particles.
  • Figure 6 is a transmission electron micrograph (TEM) photo of an ordered multilayer of Co particles of Figure 4, each black dot being a single 8 nm. diameter Co particle.
  • TEM transmission electron micrograph
  • Figure 1 is a transmission electron micrograph (TEM) photo of an ordered monolayer of cobalt particles, with each black dot being a single 8 nm diameter particle. The dots are regularly separated by the organic stabilizer layer, which appears as the lighter region between the particles.
  • the TEM was recorded at 120 KV electron beam energy on a Philips EM 420 microscope.
  • Figure 2 shows the general fabrication method to form the magnetic storage medium of the present invention: creating a periodic array or layer 4 of nm-scale magnetic particles 1 on a substrate 5, and then stabilizing the particles 1 in their positions within layer 4 .
  • a monodisperse sample of ferromagnetic particles 1 with diameter of the order 5-20 nm (“nanoparticles”) is made according to the methods of the aforesaid patent application of Murray and Sun.
  • the particles 1 consist of an inorganic core 2, surrounded by an organic stabilizing layer 3.
  • the particles 1 are soluble in a hydrocarbon solvent such as dodecane.
  • a bottle containing dodecane and the aforesaid ferromagnetic particles 1 dissolved in the dodecane is prepared according to the methods described in the aforesaid Murray et al application.
  • the concentration of said particles 1 can be approximately 0.1 grams of particles in 0.01 litre of dodecane.
  • the magnetic nanoparticles utilized in this invention comprise a magnetic material selected from the group consisting of elements Co, Fe, Ni, Mn, Sm, Nd, Pr, Pt, Gd, an intermetallic compound of the aforesaid elements, a binary alloy of said elements, a ternary alloy of said elements, an oxide of Fe further comprising at least one of said elements other than Fe, barium ferrite, and strontium ferrite.
  • each particle 1 has a 2 layer structure consisting of a ferromagnetic core (Co, Fe, Ni) surrounded by a noble metal layer ("shell" of Pt, Au, Ag, Pd).
  • a noble metal shell protects the magnetic core against oxidation, and is also useful in forming covalent links between the particles 1 and the surface of substrate 5.
  • the preferred substrate is a Si wafer, or a glass substrate, with the requirement that the surface is flat. Ideally, the rms roughness of the substrate should be similar to the particle diameter, hereinafter called " D".
  • the diameter D of the magnetic nanoparticles 1 of this invention is preferably 5 - 15 nm.
  • An important feature of the present invention is that optimum ordered, periodic formation of monolayer 4 is best achieved when the particles 1 have a substantially uniform diameter---when the size distribution of the nanoparticles is narrow.
  • the standard deviation of the distribution of particle diameters be ⁇ 10 %, with 7% or smaller being preferred.
  • the monolayer depicted in Figure 1 consists of Co particles with a 5% size distribution. It is desirable that the distribution of particle diameters be ⁇ 10%. It is preferred that the distribution be 7 % (or less). while this narrow size distribution is optimum, broader size distributions and monolayer arrays with imperfect ordering may also be formed in accordance with the present invention.
  • the particles 1 comprise the inorganic, magnetic core 2 described above, and are surrounded with an organic stabilizer layer 3 having an effective thickness of about 1 - 5 nm, with 2 - 4 nm being preferred.
  • Suitable molecules for this organic stabilizer layer 3 include long chain organic compounds of the form R-X, where R is a member selected from the group consisting of 1) a hydrocarbon chain in straight or branched formation, said hydrocarbon chain comprising 6 to 22 carbon atoms, and 2) a fluorocarbon chain in straight or branched formation, said fluorocarbon chain comprising 6 to 22 carbon atoms , and where X is selected from carboxylic acid, phosphonic acid, phosphinic acid, sulfonic acid, sulfinic acid,and thiol.
  • the effective thickness of the aforesaid organic stabilizer layer 3 may be adjusted by changing the carbon chain length, with Oleic Acid having an 18 carbon chain being an inexpensive and convenient example ( 2 nm effective thickness).
  • An ordered layer 4 of the nanoparticles 1 is formed as a monolayer on the substrate 5 by any suitable method.
  • slow evaporation of the solvent from a film of uniform thickness as described in Murray et al, Science, 1995, v. 270, p.1335 may be used.
  • the dodecane or other suitable solvent is removed by air drying, or heating in an oven to about 40°C (or slightly higher temperature).
  • the ordered array of the present invention forms as the solvent is slowly removed , and a driving force to form said array is an attractive force between the Oleic acid organic stabilizer layer 3 of mutually adjacent Co particles 1.
  • Several methods may be used to coat a film of uniform thickness of the liquid dispersion containing both particles and solvent, including but not limited to dip coating, spin coating, and coating using a blade moved at controlled speed parallel to the substrate surface.
  • the Langmuir-Blodgett assembly method as described in M.C. Petty, "Langmuir-Blodgett Films, an Introduction” , copyright 1996 by Cambridge Univ. Press, NY. ISBN # 0 521 41396 6, may be used to form the ordered monolayer of particles.
  • Step 1 wet chemical processing is used up to this point, and that dry, vacuum based processing is used subsequent to this point.
  • the sample is placed in a plasma enhanced chemical vapor deposition (PE CVD) tool, or similar plasma reactor.
  • PE CVD plasma enhanced chemical vapor deposition
  • the organic stabilizer coating 3 may now be removed if desired (see Step 1, Figure 2 ). Suitable methods for Step 1 are heating in vacuum, exposure to UV light, and exposure to an oxygen plasma. (If the latter method is used, a hydrogen plasma exposure is used to remove any oxide from the layer 4 of magnetic nanoparticles 1.) . Alternatively, the aforesaid organic stabilizer coating 3 may be left in place.
  • a protective coating 7 may now be deposited in the encapsulation step ( see Step 2, Figure 2 ), to hold the nanoparticle 1 of monolayer 4 in place and to protect layer 4.
  • the coating 7 must be hard and adherent to the substrate 5.
  • Suitable materials for the protective overcoating 7 include diamond like carbon (DLC), amorphous C or Si, and oxides such as aluminum oxide or Si oxide.
  • the preferred material for coating 7 is diamond like carbon (DLC), deposited by heating the substrate 5 to about 100 to 300°C, and exposing the sample to a hexane plasma (or similar carbon source molecule).
  • the preferred thickness for coating 7 is at least 10 nm.
  • the coating 7 may be deposited by any suitable method known to those skilled in the art. For example, some methods utilize a plasma enhanced chemical vapor deposition (PE CVD) tool, or a reactive sputtering tool. Moreover, it may be convenient to deposit the coating 7 in the same chamber or tool that may have been used to remove the organic stabilizer layer 3 from the particles 1.
  • PE CVD plasma enhanced chemical vapor deposition
  • reactive sputtering tool it may be convenient to deposit the coating 7 in the same chamber or tool that may have been used to remove the organic stabilizer layer 3 from the particles 1.
  • Figure 3 shows a plan view of the preferred embodiment of this invention, after Step 1 of Figure 2 (the protective overcoating 7 is not shown ).
  • the preferred spacing B between bits in the form of nanoparticles 1 is about 12 nm. in this example, the preferred diameter (D) of each Co nanoparticle bit is 8 nm, and the preferred distance between particles (E) is about 4 nm. ( The distance E is 2 X the effective thickness of the organic coat, before removal of said coat. See Figure 2A.)
  • the resulting information density using 1 magnetic particle / bit is 6 x 1012 (6 Tbit) per square inch.
  • current technology using magnetic thin films rather than magnetic nm-scale particles provides a density on the order of 109 to 1010 (1 to 10 Gbit) per square inch.
  • nm-scale particles specifically magnetic particles ordered in a single layer.
  • alternative embodiment of the ordered arrays of the present invention may use multiple layers of such nm-scale particles.
  • Magnetic recording media based on multiple layers of magnetic particles are especially useful when multiple-valued recording schemes are used, wherein each magnetic recording bit can be assigned > 2 values, for example 3 or 4 values, and a greater information storage density is thus achieved.
  • the magnetic recording media shown in Figures 4 and 5 are useful for the simple case of the 3 value recording scheme, wherein 3 magnetic states of each bit are defined and the 3 magnetic states are all particles with parallel magnetic moments in the UP direction, all particles with parallel magnetic moments in the DOWN direction, and particles spin UP + particles spin DOWN.
  • the multilayer of particles simply places more magnetic particles per unit area than the ordered monolayer, which results in a larger magnetization signal for a given bit area.
  • Figure 4 is a section view of a magnetic recording medium based on a multilayer 4A of monodisperse nm-scale Co particles 1.
  • the recording medium consists of a substrate 5, an undercoat 6 (coating on the substrate), a multilayer 4A of close packed nm-scale particles 1, and a protective overcoat 7.
  • the substrate 5 may be either rigid (such as glass, or a Si wafer) or flexible, such as a polymeric plastic disc.
  • An undercoat 6, which is applied to the substrate 5 to promote ordered multilayer formation and enables the formation of chemical links between particles 1 and substrate 5, may preferably comprise an affinity material comprising bi- functional molecules of the form X-R-Y, wherein R is selected from hydrocarbon and fluorocarbon chains of between 3 and 22 carbon atoms, and X and Y are selected from: sulfonic acids R-SO2OH sulfinic acids R-SOOH phosphinic acids R2POOH phosphonic acids R-OPO(OH)2 carboxylic acids R-COOH thiols R-SH trismethoxysilane R-Si(OCH3)3 trisethoxysilane R-Si(OCH2CH3)3 trichlorosilane R-SiCl3
  • the multilayer 4A is preferably formed on undercoat 6 by evaporation of a solvent from a film of uniform thickness, said film being a solution of the nm-scale particles in a solvent such as dodecane.
  • the nm-scale particles 1 in Figure 4 may preferably have a chemical composition and size distribution as described above in reference to Figure 2.
  • the magnetic material should be selected from the group consisting of elements Co, Fe, Ni, Mn, Sm, Nd, Pr, Pt, Gd, an intermetallic compound of the aforesaid elements, a binary alloy of said elements, a ternary alloy of said elements, an oxide of Fe further comprising at least one of said elements other than Fe, barium ferrite, and strontium ferrite.
  • the particles may preferably be composed of a ferromagnetic transition metal ( Co, Fe or Ni ), or are binary alloys of Co, Fe and Ni, or ternary alloys of these elements.
  • each particle has a 2 layer structure consisting of a ferromagnetic core (Co, Fe, Ni) surrounded by a noble metal layer ("shell" of Pt, Au, Ag, Pd).
  • the diameter of the particles should be 5 - 15 nm, and the standard deviation of the distribution of the particle diameters should preferably be ⁇ 7%, with 5 % (or less) being most preferred.
  • Figure 5 is a section view of an alternative magnetic recording medium that consists of 2 layers of ordered monodisperse nm-scale Co particles 1, with a protective coating 7B deposited between layers 4B and 4C of nm-scale particles 1.
  • the recording medium comprises a substrate 5, an undercoat 6 on the substrate (preferably but not necessarily of affinity material as described hereinabove), a first layer 4B of nm-scale particles 1 (an ordered array as in Figure 3), a first protective coating layer 7B, a second layer 4C of nm-scale particles 1 (another ordered array as in Figure 3), and a second protective coating layer 7C.
  • the substrate 5 may be either rigid (such as glass, or a Si wafer) or flexible, such as a polymeric plastic disc.
  • a coating 6 ("undercoat") is applied to the substrate to promote ordered multilayer formation.
  • the thickness of the first overcoating 7B may be adjusted to change the interaction of the first ordered monolayer 4B with the second monolayer 4C.
  • Figure 6A may continue with more layers, as will be readily understood.
  • Figure 6 is a transmission electron micrograph (TEM) photo of an ordered multilayer of Co particles of Figure 4, each black dot being a single 8 nm. diameter Co particle. The top-most layer appears black, and a missing Co particle is highlighted by the while arrow (this is a defect in the ordered multilayer array). The second layer down appears as gray dots.
  • the multilayer 4A of Figure 4 is formed by solvent evaporation from a solution of the same particles described above in reference to Figure 2, which depicts formation of an ordered monolayer), but in the multilayer case a higher temperature may preferably be used to increase the particle mobility and to remove solvent at a faster rate. For example, the multilayer whose TEM photo is shown in Figure 6 was prepared at 60°C.
  • the "undercoat" layer 6 on the substrate 5 may comprise an affinity material which enables the formation of chemical links between the particles 1 and the substrate 5.
  • an affinity material comprises bi-functional molecules of the form X-R-Y, wherein R is selected from hydrocarbon and fluorocarbon chains of between 3 and 22 carbon atoms, and X and Y are selected from: sulfonic acids R-SO2OH sulfinic acids R-SOOH phosphinic acids R2POOH phosphonic acids R-OPO(OH)2 carboxylic acids R-COOH thiols R-SH trismethoxysilane R-Si(OCH3)3 trisethoxysilane R-Si(OCH2CH3)3 trichlorosilane R-SiCl3
  • the bi-functional molecule there is a tri-alkoxysilane group (trimethoxy- and triethoxy- silanes being preferred), which will link covalently to SiO2 and metal oxide surfaces.
  • a glass substrate, or Si wafer coated with SiO2, or a metal oxide coating on the substrate is preferably used.
  • at the other end of the bifunctional molecule there is a carboxylic acid, phosphonic acid, phosphinic acid, sulphonic acid, sulphinic acid, or thiol group.
  • Figure 7 shows a method of the present invention, and by this method it is possible to create an ordered monolayer of nm-scale particles in selected regions of a substrate surface, while leaving the remaining regions of the surface free of said particles.
  • selected regions of the substrate 5 can be made with customized properties by selective placement of ordered arrays (layers 4) of nm-scale particles 1.
  • the undercoat layer 6 on the substrate comprises an affinity material (enabling the formation of chemical links between the particles 1 and the substrate 5 ), and the undercoat layer 6 (affinity coating) is patterned as shown in Step A of Figure 7 using standard lithographic methods.
  • the pattern of the affinity coating may have any shape, either geometric or an arbitrary shape, as shown in Fig. 7.
  • Step A of Fig. 7 the ordered monolayer array of nm-scale particles is formed by the methods described above in reference to Figure 2.
  • the result of the fabrication process with a patterned affinity coating is Step B of Figure 7, where ordered layers 4 of nm-scale particles 1 are then formed only in the selected regions covered with affinity coating 6.
  • the selected regions then have the properties of the nm-scale particle layer 4.
  • the remaining regions without the affinity coating maintain the properties of the original surface of substrate 5.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Biomedical Technology (AREA)
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EP99305758A 1998-07-31 1999-07-21 Magnetisches Speichermedium aus Nanopartikeln Expired - Lifetime EP0977182B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US127453 1998-07-31
US09/127,453 US6162532A (en) 1998-07-31 1998-07-31 Magnetic storage medium formed of nanoparticles

Publications (3)

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EP0977182A2 true EP0977182A2 (de) 2000-02-02
EP0977182A3 EP0977182A3 (de) 2000-06-28
EP0977182B1 EP0977182B1 (de) 2005-04-20

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US (1) US6162532A (de)
EP (1) EP0977182B1 (de)
JP (1) JP2000048340A (de)
KR (1) KR100336735B1 (de)
CN (1) CN1110797C (de)
AT (1) ATE293829T1 (de)
DE (1) DE69924794T2 (de)
SG (1) SG77260A1 (de)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005299A1 (en) * 2000-07-10 2002-01-17 Council For The Central Laboratory Of The Research Councils Nanostructures
US6500497B1 (en) 2001-10-01 2002-12-31 Data Storage Institute Method of magnetically patterning a thin film by mask-controlled local phase transition
EP1226878A3 (de) * 2001-01-24 2003-08-13 Matsushita Electric Industrial Co., Ltd. In Linien gebrachte feine Teilchen, Verfahren zu deren Herstellung und diese verwendender Apparat
US6713173B2 (en) 1996-11-16 2004-03-30 Nanomagnetics Limited Magnetizable device
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EP0977182A3 (de) 2000-06-28
DE69924794D1 (de) 2005-05-25
EP0977182B1 (de) 2005-04-20
JP2000048340A (ja) 2000-02-18
SG77260A1 (en) 2000-12-19
CN1110797C (zh) 2003-06-04
KR100336735B1 (ko) 2002-05-13
ATE293829T1 (de) 2005-05-15
KR20000011748A (ko) 2000-02-25
US6162532A (en) 2000-12-19
CN1243999A (zh) 2000-02-09
DE69924794T2 (de) 2006-03-09

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