EP0977250A3 - Structure et procédé de fabrication d'un transistor bipolaire à hétérojonction - Google Patents

Structure et procédé de fabrication d'un transistor bipolaire à hétérojonction Download PDF

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Publication number
EP0977250A3
EP0977250A3 EP99114471A EP99114471A EP0977250A3 EP 0977250 A3 EP0977250 A3 EP 0977250A3 EP 99114471 A EP99114471 A EP 99114471A EP 99114471 A EP99114471 A EP 99114471A EP 0977250 A3 EP0977250 A3 EP 0977250A3
Authority
EP
European Patent Office
Prior art keywords
base
emitter
planarization step
fabrication
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99114471A
Other languages
German (de)
English (en)
Other versions
EP0977250A2 (fr
Inventor
Christoph Gässler
Helmut Dr. Leier
Hyunchol Doosan Apt. 801-1801 Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Monolithic Semiconductors GmbH
Original Assignee
DaimlerChrysler AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DaimlerChrysler AG filed Critical DaimlerChrysler AG
Publication of EP0977250A2 publication Critical patent/EP0977250A2/fr
Publication of EP0977250A3 publication Critical patent/EP0977250A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Bipolar Transistors (AREA)
EP99114471A 1998-07-31 1999-07-23 Structure et procédé de fabrication d'un transistor bipolaire à hétérojonction Withdrawn EP0977250A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19834491 1998-07-31
DE19834491A DE19834491A1 (de) 1998-07-31 1998-07-31 Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors

Publications (2)

Publication Number Publication Date
EP0977250A2 EP0977250A2 (fr) 2000-02-02
EP0977250A3 true EP0977250A3 (fr) 2000-03-22

Family

ID=7875930

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99114471A Withdrawn EP0977250A3 (fr) 1998-07-31 1999-07-23 Structure et procédé de fabrication d'un transistor bipolaire à hétérojonction

Country Status (4)

Country Link
US (1) US6365477B1 (fr)
EP (1) EP0977250A3 (fr)
JP (1) JP2000058557A (fr)
DE (1) DE19834491A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030042503A1 (en) * 2001-06-18 2003-03-06 Quesnell Hartmann Transistor with intentionally tensile mismatched base layer
GB0200067D0 (en) * 2002-01-03 2002-02-20 Qinetiq Ltd Wide bandgap transistors
JP2004172582A (ja) 2002-10-30 2004-06-17 Sharp Corp ヘテロ接合バイポーラトランジスタ
US10622465B2 (en) 2017-12-20 2020-04-14 Qualcomm Incorporated Heterojunction bipolar transistor (HBT)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345097A (en) * 1992-03-02 1994-09-06 Matsushita Electric Industrial, Co., Ltd. Heterojunction bipolar transistor including collector region of InP and method of fabricating the same
EP0671762A2 (fr) * 1994-03-10 1995-09-13 Hughes Aircraft Company Réduction de la capacité parasite de la jonction base-collecteur de transistors bipolaires à hétérojonction
EP0817276A1 (fr) * 1995-03-17 1998-01-07 Hitachi, Ltd. Dispositif a semi-conducteur et son procede de production
JPH1050720A (ja) * 1996-08-01 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2542676B2 (ja) * 1987-07-02 1996-10-09 株式会社東芝 ヘテロ接合バイポ―ラトランジスタ
JPH0669227A (ja) * 1992-05-29 1994-03-11 Texas Instr Inc <Ti> 化合物半導体のヘテロ接合バイポーラトランジスタ及びその製造方法
US5298438A (en) * 1992-08-31 1994-03-29 Texas Instruments Incorporated Method of reducing extrinsic base-collector capacitance in bipolar transistors
JPH06132298A (ja) * 1992-10-14 1994-05-13 Mitsubishi Electric Corp 半導体装置の製造方法
US5571732A (en) * 1993-08-19 1996-11-05 Texas Instruments Incorporated Method for fabricating a bipolar transistor
US5445976A (en) * 1994-08-09 1995-08-29 Texas Instruments Incorporated Method for producing bipolar transistor having reduced base-collector capacitance
US5702958A (en) * 1994-08-09 1997-12-30 Texas Instruments Incorporated Method for the fabrication of bipolar transistors
JPH08181151A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp バイポーラトランジスタ
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
JPH09162194A (ja) * 1995-12-08 1997-06-20 Mitsubishi Electric Corp ヘテロ接合バイポーラトランジスタ
DE19609933A1 (de) * 1996-03-14 1997-09-18 Daimler Benz Ag Verfahren zur Herstellung eines Heterobipolartransistors
US5736417A (en) * 1996-05-13 1998-04-07 Trw Inc. Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor
US5625206A (en) * 1996-06-03 1997-04-29 Lucent Technologies Inc. High-speed double-heterostructure bipolar transistor devices
US5656515A (en) * 1996-07-18 1997-08-12 Lucent Technologies, Inc. Method of making high-speed double-heterostructure bipolar transistor devices
US5907165A (en) * 1998-05-01 1999-05-25 Lucent Technologies Inc. INP heterostructure devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5345097A (en) * 1992-03-02 1994-09-06 Matsushita Electric Industrial, Co., Ltd. Heterojunction bipolar transistor including collector region of InP and method of fabricating the same
EP0671762A2 (fr) * 1994-03-10 1995-09-13 Hughes Aircraft Company Réduction de la capacité parasite de la jonction base-collecteur de transistors bipolaires à hétérojonction
EP0817276A1 (fr) * 1995-03-17 1998-01-07 Hitachi, Ltd. Dispositif a semi-conducteur et son procede de production
JPH1050720A (ja) * 1996-08-01 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 06 30 April 1998 (1998-04-30) *
SHIGEMATSU H ET AL: "Ultrahigh f/sub T/ and f/sub max/ new self-alignment InP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVD", IEEE ELECTRON DEVICE LETTERS, FEB. 1995, USA, vol. 16, no. 2, pages 55 - 57, XP002120187, ISSN: 0741-3106 *

Also Published As

Publication number Publication date
DE19834491A1 (de) 2000-02-03
EP0977250A2 (fr) 2000-02-02
JP2000058557A (ja) 2000-02-25
US6365477B1 (en) 2002-04-02

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