EP1112586A2 - Procede d'application de pistes conductrices metalliques servant d'electrode sur une plaque a canaux pour ecrans plats a grande surface - Google Patents

Procede d'application de pistes conductrices metalliques servant d'electrode sur une plaque a canaux pour ecrans plats a grande surface

Info

Publication number
EP1112586A2
EP1112586A2 EP99939446A EP99939446A EP1112586A2 EP 1112586 A2 EP1112586 A2 EP 1112586A2 EP 99939446 A EP99939446 A EP 99939446A EP 99939446 A EP99939446 A EP 99939446A EP 1112586 A2 EP1112586 A2 EP 1112586A2
Authority
EP
European Patent Office
Prior art keywords
palladium
layer
metal
channel plate
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99939446A
Other languages
German (de)
English (en)
Inventor
Marten Walther
Andreas Weber
Tobias KÄLBER
Burkhart Danielzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Carl Zeiss AG
Original Assignee
Carl Zeiss AG
Schott Glaswerke AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss AG, Schott Glaswerke AG filed Critical Carl Zeiss AG
Publication of EP1112586A2 publication Critical patent/EP1112586A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H01J11/22—Electrodes, e.g. special shape, material or configuration
    • H01J11/26—Address electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2217/00—Gas-filled discharge tubes
    • H01J2217/38—Cold-cathode tubes
    • H01J2217/49—Display panels, e.g. not making use of alternating current
    • H01J2217/492—Details
    • H01J2217/49207—Electrodes

Definitions

  • the invention relates to a method for applying metallic conductor tracks as electrodes on a channel plate for large-area flat screens using external currentless and galvanic methods for metal deposition.
  • PDPs plasma display panels
  • PLCs plasma-addressed liquid displays
  • channel plate made of glass for their function, on which channels are formed by means of webs, also called barriers or separators, and on which there is a defined number of vertical (for PDP) or horizontal (for PALC) traces as addressing electrodes.
  • These electrodes are applied between the rib-shaped webs, which in turn are built up only after the electrodes have been formed, or have already been formed on the glass substrate beforehand. 1 shows a typical embodiment of such a channel plate.
  • JP 95-077892 describes a method in which the addressing electrodes are formed on the channel plate by the structured application of metal-like pastes by means of screen printing or other printing methods.
  • the principal disadvantages of this known method lie in the lack of resolution of the available printing methods and in the high price of the metal-containing printing pastes, which stands in the way of the economical production of the large-area flat screens. Furthermore, this method is only suitable for the application of electrodes on flat glass substrates on which there are still no webs.
  • US-A-4,359,663 describes a method for applying the addressing electrodes in the channels by sputtering the desired electrode material onto the glass substrate.
  • the main disadvantage of this sputtering process is the high production costs due to high plant investments and the relatively low substrate throughput.
  • Japanese laid-open patent publication JP-A-H8-222128 describes a method for applying electrodes to a channel plate for display applications by means of electroless and electroless methods, the metallization being deposited non-selectively on the entire surface of the display.
  • the entire remaining area of 95-80% of the display area must be etched free for structuring the electrodes in the case of deposition over the entire area.
  • this process makes insufficient use of the metal content of the electroplating baths used.
  • Metal-containing or heavy-metal-containing waste arises, which must be disposed of at high cost.
  • ITO transparent conductive layer
  • this layer can only be applied by means of a vacuum process (sputtering or evaporation), so that the described advantages of metallization from the liquid phase are partially eliminated.
  • the invention has for its object, starting from this, also referred to at the outset, method to manage it in such a way that it is more cost-effective in terms of process, while reducing the consumption of metals to be deposited, with the elimination of additional etching process steps and the resulting special waste, and without the use of more expensive ones Vacuum process is to be carried out.
  • selective metal deposits without external current and galvanic (current-carrying) metal deposits ie selective deposits from the liquid phase
  • vacuum processes e.g. sputtering or vapor deposition
  • these processes are very cost-effective since only low investment costs are necessary and high substrate throughputs are possible.
  • the conditions for the clean room class are clearly relaxed compared to high vacuum technologies.
  • a large-area metallization is typically applied, which is selectively removed by masking.
  • these methods are not suitable for the application of electrodes for PDPs or PALCs, since large areas with diagonals of 42 inches and more have to be metallized for these applications.
  • the flanks of the barrier ribs cannot easily be exposed with the laser and the necessary selective removal of the protective layer could not be carried out.
  • the complete removal of any metals on the flanks of the rib-like webs is necessary.
  • EP 0 534 576 B1 also describes a method for selectively applying conductor tracks to glass substrates for electronic circuits, in which a mask with the negative of the conductor track structure to be applied is placed in the beam path of an excimer laser.
  • the laser radiation emerging from the mask is directed onto a flat quartz glass pane, the back of which is in contact with a reductive copper bath, as a result of which laser-induced thin copper tracks are selectively deposited in accordance with the desired structure. Since this method also requires a laser, which is more specific, it is not suitable for large glass substrates such as channel plates and expensive quartz glass must also be used, since only this glass is permeable to the light of the necessary excimer laser and enables selective rear copper deposition .
  • the method according to the invention advantageously uses only processes suitable for large areas without the use of vacuum technologies for the selective construction of the addressing electrodes. Furthermore, no transparent conductive layer as a basis and no quartz glass are required for this method, and likewise no laser. In addition, the method according to the invention can also be used without difficulty for duct plates on which the rib-like webs, the barrier ribs, are already located.
  • the method according to the invention has an advantageous effect particularly in the case of the trench structures of PDP / PALC screens, since the trench walls can also be metallized homogeneously.
  • Roughening on the substrate is also very advantageous because it improves the adhesion.
  • all metals and metal alloys which can be deposited without current or with current can be used either as the sole material or in the form of multilayers.
  • a thin conductor track is first applied without external current, which is then subsequently reinforced by galvanic or chemical deposition. It has proven to be expedient that a thin, full-surface, conductive layer is first deposited as the starting layer, which is then selectively covered and then selectively galvanically and / or electrolessly reinforced on the intended surfaces of the electrodes, and in which the thin, entire starting layer outside the electrode areas is removed again.
  • the selective reinforcement of the electrode areas is preferably carried out by means of a self-adjusting mask.
  • the method can alternatively be carried out by first depositing a thin, full-area, conductive layer as the starting layer, which is then structured photolithographically and then galvanically and / or electrolessly reinforced.
  • Either a metal or a conductive oxide can be applied as the conductive starting layer with a maximum layer thickness of 500 ran, preferably with a layer thickness of maximum 200 nm.
  • a further advantageous embodiment of the method for applying metallic conductor tracks as addressing electrodes to a channel plate can be achieved if, in preparation for the selective construction of the conductor tracks, the channel plate is first structured by means of photolithography using a photoresist covering the entire channel plate and a positive mask in accordance with the conductor track structure is then covered with the photolithographically predetermined free tracks with palladium nuclei, then the photoresist is stripped on the other areas and finally on the germinated tracks the metallic conductor tracks from the liquid phase and be provided with at least one protective layer. This process ensures adherent traces using a relatively small amount of metal.
  • the method can advantageously be carried out in such a way that, in preparation for the selective construction of the conductor tracks, palladium nuclei are selectively applied in accordance with the conductor track structure and finally the metallic conductor tracks are deposited on the germinated tracks from the liquid phase and provided with at least one protective layer.
  • the selective application of the palladium seeds it is possible for the palladium nuclei to be applied selectively using inkjet technology.
  • the selective application of the palladium nuclei according to one embodiment of the invention can be carried out by etching or sandblasting the channel plate over a mechanical or photolithographic structured mask with openings corresponding to the conductor track structure while roughening the uncovered track areas for selective germination from a palladium bath.
  • a further possibility of carrying out the method is that, in order to prepare for the selective application of the conductor tracks, the entire channel plate is first covered with palladium nuclei, then by means of photolithography using a photoresist covering the entire channel plate and a mask, the tracks for the electrode structure by selective deposition of Metals are generated in the tracks, then the photoresist with the underlying palladium seeds is stripped in the other areas and then the deposited conductor tracks are provided with at least one protective layer.
  • the flat palladium germination is not a continuous one Metal layer, but is only a distributed introduction of isolated germs. As a result, a very thin full-area starting layer is required, which can then be selectively reinforced, as described in the preceding.
  • photolithographically structuring should be understood to mean the steps: coating with photoresist, exposure, development, etching of the substrate at the exposed areas and subsequent stripping of the photoresist (or processes such as lift-off).
  • the electrode material consists of nickel and / or copper in conjunction with a metallic corrosion protection, the corrosion protection metal consisting of a corrosion-protecting metal, preferably nickel, palladium or gold, which can be deposited without external current.
  • the electrode material to consist of nickel and / or noble metal in conjunction with a metallic corrosion protection
  • the noble metal consisting of a metal that can be electrolessly or electrodeposable, such as palladium, silver, gold, and the corrosion protection metal of a corrosion-resistant metal, preferably nickel, palladium or gold, which can be deposited without external current.
  • the metals are present in a reductive bath; with a desired separation of Copper, for example, is provided with a reductive copper bath, which is also referred to as "chemical copper” and which enables the metals to be autocatalytically deposited.
  • a flat AF 45 glass substrate (100 x 100 x 3 mm3) is coated on one side with a positive resist (photoresist), e.g. B. (Shipley 1818) coated in a thickness of 2 microns and selectively exposed via a mask according to the desired electrode structure (step 1).
  • a positive resist photoresist
  • the substrate is immersed in an aqueous ammonium hydrogen fluoride solution for three minutes in order to chemically roughen the glass surface and thereby achieve an improved adhesion of the metal to the glass.
  • the glass substrate is located in a mounting frame such that only one side of the glass is exposed to the liquid.
  • the glass substrate is then immersed in a 5% hydrochloric acid tin (II) chloride solution, then rinsed with distilled water for 30 seconds and then immersed in a 0.05% hydrochloric acid palladium (II) chloride solution for one minute, starting to form palladium nucleation (step 2 ).
  • the glass substrate is then rinsed with flowing distilled water for one minute.
  • the photoresist is then stripped by immersion in acetone and only the palladium nuclei that are required for the further construction of the electrode remain on the glass (step 3).
  • the glass treated in this way is then immersed in a chemical nickel bath (Ni content 4.5 g / 1, hypophosphite content 22 g / 1, pH 4.5) at a temperature of 70 ° C., during which time Now selectively deposit nickel tracks with a thickness of 150 nm and the photolithographically specified width (step 4). These conductor tracks are dried at 200 ° C to achieve better liability.
  • the selectively nickel-plated glass is then immersed for 45 minutes in a chemical copper bath (Cu content 2.5 g / 1, formalin concentration 37% 8 ml / 1, pH 8.2) at 40 ° C., 2, Deposit 5 ⁇ m copper on the nickel (step 5).
  • the copper tracks are now nickel-plated for corrosion protection, the substrate being rinsed for 30 seconds in a 5% hydrochloric acid tin (II) chloride solution, then rinsed with distilled water for 15 seconds and then in an activator (Pd content 50 mg / 1, pH -Value 2) to be dipped. After rinsing with distilled water, the glass substrate is then again immersed in the above-mentioned chemical nickel solution at 65 ° C. for 5 minutes, a 1 ⁇ m thick nickel-phosphorus layer then forming, which serves as corrosion protection (step 6).
  • II hydrochloric acid tin
  • a glass substrate as in Example 1 is also selectively provided with palladium nuclei, with the difference that the palladium nuclei are applied in a structured manner using ink jet technology.
  • the glass treated in this way is then immersed for one minute in the previously described chemical nickel bath at a temperature of 70 ° C., whereby nickel tracks with a thickness of 150 nm and the width specified by printing technology are deposited selectively (step 4).
  • the layers are thermally fixed at 200 ° C.
  • the so selectively nickel-plated glass is immersed for 45 minutes in the copper bath already described at 40 ° C., 2.5 ⁇ of copper being deposited on the nickel (step 5).
  • the copper tracks are now nickel-plated for corrosion protection, the substrate being rinsed in a 5% hydrochloric acid Z_nn (II) chloride solution for 30 seconds, then rinsed with distilled water for 15 seconds and then immersed in the activator mentioned in Example 1 for 30 seconds. After rinsing with distilled water, the glass substrate is again immersed in the described chemical nickel solution at 65 ° C. for five minutes, a 1 ⁇ m thick nickel-phosphorus layer forms, which serves as corrosion protection (step 6).
  • a flat D 263 glass substrate (100 x 100 x 3 mm3) is immersed in an aqueous ammonium hydrogen fluoride solution for five minutes in order to chemically roughen the glass surface and thus improve the adhesion of the metal to the glass.
  • the glass substrate is located in a mounting frame such that only one side of the glass is exposed to the liquid.
  • the glass substrate is then immersed in a 5% hydrochloric acid tin (II) chloride solution, then rinsed with distilled water for 30 seconds and then immersed in a 0.05% hydrochloric acid palladium (II) chloride solution for one minute, starting to form palladium nucleation (step 1 ).
  • the glass substrate is then rinsed with flowing distilled water for one minute.
  • the negative photoresist is then applied to the chemically treated glass side (3 ⁇ m) and structured with an appropriate mask (step 2).
  • the glass treated in this way is then immersed for one minute in the previously described nickel bath at a temperature of 60 ° C., nickel tracks with a thickness of 100 nm and the photolithographically predetermined width now being deposited selectively (step 3).
  • the selectively nickel-plated glass is then immersed for 45 minutes in the copper bath at 40 ° C., which has also already been described, 2.5 ⁇ m of copper being deposited on the nickel (step 4).
  • the photoresist and the underlying palladium nuclei are now stripped by immersion in an aqueous alkaline solution (10% sodium hydroxide solution) which contains the complexing agent ethylenediaminetetraacetic acid (EDTA) in a concentration of 100 g / l (step 5).
  • EDTA ethylenediaminetetraacetic acid
  • the copper tracks are then nickel-plated for corrosion protection, the substrate being rinsed in a 5% hydrochloric acid tin (II) chloride solution for 30 seconds, then rinsed with distilled water for 15 seconds and then immersed in the activator mentioned for 30 seconds. After rinsing with distilled water, it will The glass substrate is then again immersed in the chemical nickel solution for five minutes, a 1 ⁇ m thick nickel-phosphorus layer then forming which serves as corrosion protection (step 6).
  • II hydrochloric acid tin
  • a flat AF 45 glass substrate (200 x 150 x 3 mm3) is screen-printed with a mechanically resistant varnish (step 1).
  • the glass substrate structured in this way is then subjected to a sandblasting process using aluminum oxide grains (step 2).
  • the lacquer is stripped so that only the roughened structures produced by the sandblasting are left on the glass substrate (step 3). In this way, trenches with a depth of approximately 5 ⁇ m are obtained.
  • the roughness on the channel floor is 0.5 ⁇ m.
  • the thus roughened glass substrate is immersed in a 5% hydrochloric acid Zir_n (II) chloride solution, then rinsed with distilled water for 30 seconds and then immersed in a 0.05% hydrochloric acid palladium (II) chloride solution for one minute, whereby the palladium nucleation begins (Ste 4).
  • the glass substrate is then rinsed with distilled water for five minutes using a spray. In this way, the germs are removed from the non-roughened parts of the glass, while sufficient germs still remain in the roughened trench areas (step 5).
  • the glass treated in this way is then immersed for one minute in the described nickel bath at a temperature of 60 ° C., nickel tracks with a thickness of 100 nm and the predetermined width now being deposited selectively (step 6).
  • the selectively nickel-plated glass is then immersed in the copper bath at 40 ° C. for 45 minutes, with 2.5 ⁇ m of copper being deposited on the nickel (step 7).
  • the copper tracks are now gold-plated for corrosion protection, with the substrate being immersed in a gold bath (gold content 3 g / 1, pH 4.6) for 15 minutes at a temperature of 85 ° C, which then selectively causes a 100 on the copper nm thick gold layer precipitates (step 8).

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

Les écrans plats modernes à grande surface, connus sous le nom d'écrans à plasma et d'écrans à cristaux liquides à adressage par plasma, sont pourvus d'une plaque de verre présentant une microstructure à canaux et une électrode d'adressage dans chaque canal. Depuis longtemps, les électrodes d'adressage sont appliquées selon des procédés d'impression ou par pulvérisation cathodique directe sélective, se faisant conformément à la structure à canaux, ou bien indirectement par retrait sélectif par attaque de couches métalliques déposées sur une grande surface sans courant extérieur et/ou par galvanoplastie, les structures à pistes conductrices étant laissées en place. Pour que l'on ait pas les inconvénients présentés par ces procédés connus, il est proposé selon l'invention, que les pistes conductrices métalliques des électrodes d'adressage ne soient appliquées que dans les zones d'électrodes, de façon sélective, selon un procédé de dépôt sans courant extérieur et/ou par galvanoplastie.
EP99939446A 1998-09-11 1999-08-03 Procede d'application de pistes conductrices metalliques servant d'electrode sur une plaque a canaux pour ecrans plats a grande surface Withdrawn EP1112586A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19841900 1998-09-11
DE19841900A DE19841900A1 (de) 1998-09-11 1998-09-11 Verfahren zum Aufbringen von metallischen Leiterbahnen als Elektroden auf eine Kanalplatte für großflächige Flachbildschirme
PCT/EP1999/005615 WO2000016366A2 (fr) 1998-09-11 1999-08-03 Procede d'application de pistes conductrices metalliques servant d'electrode sur une plaque a canaux pour ecrans plats a grande surface

Publications (1)

Publication Number Publication Date
EP1112586A2 true EP1112586A2 (fr) 2001-07-04

Family

ID=7880821

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99939446A Withdrawn EP1112586A2 (fr) 1998-09-11 1999-08-03 Procede d'application de pistes conductrices metalliques servant d'electrode sur une plaque a canaux pour ecrans plats a grande surface

Country Status (9)

Country Link
EP (1) EP1112586A2 (fr)
JP (1) JP2002525797A (fr)
KR (1) KR20010090726A (fr)
CN (1) CN1319245A (fr)
CA (1) CA2343386A1 (fr)
DE (1) DE19841900A1 (fr)
HK (1) HK1040322A1 (fr)
TW (1) TW442817B (fr)
WO (1) WO2000016366A2 (fr)

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DE10011455B4 (de) * 2000-03-10 2005-12-08 Schott Ag Verfahren zum Aufbringen von metallischen Leiterbahnen als Elektroden auf eine Kanalplatte aus Glas für großflächige Flachbildschirme
DE10026974A1 (de) * 2000-05-31 2002-01-03 Schott Glas Kanalplatte aus Glas für Flachbildschirme und Verfahren zu ihrer Herstellung
DE10026976C2 (de) * 2000-05-31 2002-08-01 Schott Glas Kanalplatte aus Glas für Flachbildschirme und Verfahren zu ihrer Herstellung
JP3960064B2 (ja) * 2002-02-05 2007-08-15 松下電器産業株式会社 プラズマディスプレイパネルの製造方法
CN100477057C (zh) * 2004-11-19 2009-04-08 中华映管股份有限公司 等离子显示器之寻址电极与导电结构的形成方法
CN101489356B (zh) * 2008-01-16 2011-03-30 富葵精密组件(深圳)有限公司 电路板及其制作方法
CN102522293B (zh) * 2011-12-31 2015-06-17 四川虹欧显示器件有限公司 等离子显示屏中寻址电极及其制备方法
CN102496547A (zh) * 2011-12-31 2012-06-13 四川虹欧显示器件有限公司 等离子显示屏中寻址电极及其制备方法
CN102522292B (zh) * 2011-12-31 2015-07-15 四川虹欧显示器件有限公司 等离子显示屏中显示电极及其制备方法
CN103384452A (zh) * 2012-05-02 2013-11-06 力达通讯股份有限公司 线路图案的制造方法

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Also Published As

Publication number Publication date
TW442817B (en) 2001-06-23
CN1319245A (zh) 2001-10-24
DE19841900A1 (de) 2000-03-30
CA2343386A1 (fr) 2000-03-23
HK1040322A1 (zh) 2002-05-31
JP2002525797A (ja) 2002-08-13
WO2000016366A3 (fr) 2000-07-13
WO2000016366A2 (fr) 2000-03-23
KR20010090726A (ko) 2001-10-19

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