EP1222453A2 - Procede de fabrication de structures conductrices electriques dans le domaine nanometrique et utilisation en tant que capteur impedimetrique - Google Patents

Procede de fabrication de structures conductrices electriques dans le domaine nanometrique et utilisation en tant que capteur impedimetrique

Info

Publication number
EP1222453A2
EP1222453A2 EP00975855A EP00975855A EP1222453A2 EP 1222453 A2 EP1222453 A2 EP 1222453A2 EP 00975855 A EP00975855 A EP 00975855A EP 00975855 A EP00975855 A EP 00975855A EP 1222453 A2 EP1222453 A2 EP 1222453A2
Authority
EP
European Patent Office
Prior art keywords
electrodes
substrate
edges
electrical conductor
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00975855A
Other languages
German (de)
English (en)
Inventor
Frank Katzenberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Publication of EP1222453A2 publication Critical patent/EP1222453A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
    • G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles

Definitions

  • the invention relates to a method for producing electrical conductor structures in the nanometer range, i.e. electrically conductive wires, the diameter of which typically range from 1 nm to 500 nm.
  • electrodes applied to a carrier substrate and configured in an interdigital electrode arrangement are suitable for this purpose.
  • the selectively acting detector substances for example oligonucleotides or antigens, are applied between the electrodes and bound to the substrate.
  • they form an interaction layer in the form of a dielectric, the dielectric change of which represents the measured variable of the biochemical sensor to be detected.
  • binding reactions with the corresponding antigens occur, as a result of which the dielectric behavior of the interaction layer between the electrodes changes.
  • the electrical field lines of the electrical field between the electrodes should run largely within the interaction layer.
  • the ratio of the electrode spacing to the layer thickness of the dielectric is close to or less than 1.
  • the layer thickness of the Interaction layer usually designed as a monolayer is only a few 10 nm - this corresponds approximately to the length of the oligonucleotides or antigens oriented perpendicular to the substrate surface.
  • the electrode spacing should be of the same or even a smaller dimension in order to achieve the desired sensitivity of the biochemical sensor.
  • the invention is based on the object of taking measures which serve to increase the sensitivity of impedimetrically operating biochemical sensors.
  • it is important to significantly reduce the manufacturing outlay and the associated costs in the production of such sensors.
  • the detection sensitivity of such sensors should be increased if the interaction layer between the electrodes is as large as possible.
  • the idea on which the invention is based is the sharp concentration of the electric field between two electrodes, within which the interaction layer required for the detection of biochemical substances, in which, for example, oligonucleotides or antigens are introduced, is provided.
  • these are miniaturized line wire sections with a typical line cross section of 1 to 500 nm and line lengths greater than 100 nm, which are preferably perpendicular to the electrical field lines running between the electrodes are arranged.
  • This measure makes it possible to apply the electric field to the To concentrate the electrode gap and in particular on the surface of the nanowires, although the electrode spacing can be several micrometers, so that the electrode arrangement can be produced using customary, not cost-intensive methods.
  • a method for producing related electrical conductor structures in the nanometer range is designed such that using a dielectric surface substrate having a surface topography, the surface topography of which has a large number of edge runs which run largely parallel to one another and which rise above the surface of the surface substrate, the surface substrate is electrically oblique shading acting on the conductive material is carried out in such a way that the electrically conductive material preferably settles on the edges.
  • Uniaxially oriented semicrystalline polymer thin films which are themselves embedded in an amorphous matrix can be used as particularly suitable surface substrate materials, the crystalline regions on the surface being raised above the amorphous regions and forming edges.
  • the edge pulls serve as the preferred location for metal material deposition, which occurs on the edge pulls as part of oblique shading.
  • the oblique shading itself represents a deposition process, preferably an anisotropic vapor deposition process, in which the electrically conductive material to be deposited is directed obliquely to the surface of the surface substrate in its vapor phase, whereby it preferably settles on the raised edges.
  • a main aspect of the invention is the saving in carrying out biochemical examinations by the possibility of producing an inexpensive biochemical sensor in which an expensive nanostructuring of the electrode arrangement can be dispensed with.
  • Fig. 2 representation of a surface topology of a semi-crystalline
  • FIG. 3 schematic diagram to explain the oblique shading. Description of an embodiment
  • FIG. 1 a shows the top view of an impedance-acting biochemical sensor, which is essentially characterized in that two electrodes 1, 2 are arranged at a distance of a few ⁇ m, preferably on a carrier substrate 3 (see FIG. 1 b). Between the electrodes 1, 2 there is a conductor structure 4 consisting of a plurality of nanowires arranged parallel to one another, the arrangement of which can be seen in a detailed illustration in FIG. 1b.
  • the left electrode 1 is shown in FIG. 1 b and applied directly to the carrier substrate 3.
  • the nanowires 4 shown in cross section are each provided with an equidistant mutual distance.
  • the longitudinal extension of the nanowires 4 is oriented perpendicular to the electrical field lines 5, the electrical field lines concentrating on the surface of the nanowires (see arrow representations).
  • the cross section of the nanowires typically has sizes between 5 and 20 nm, their mutual distance is approximately the same order of magnitude, preferably between 5 and 30 nm.
  • the surface of the carrier substrate 3 and the surface of the nanowires are with biochemical sensors 6 in the form of antigens or applied to oligonucleotides. The corresponding binding events take place on the antigens or oligonucleotides 6, on which, for example, certain DNA fragments hybridize.
  • the electric field 5 that is formed between the electrodes 1, 2 is concentrated on the area of the interaction layer 7, which is expressed by the strongly curved field lines 5 within the interaction layer 7.
  • the electric field 5 is concentrated in the immediate vicinity of the sensor surface, which at the same time also results in a significant increase in sensitivity in the detection of molecular binding events within the interaction layer 7.
  • the natural surface topology of uniaxially oriented semicrystalline polymers is advantageously used (see here FIG. 2).
  • Such polymer thin films consist of nanocrystals, which are embedded in an amorphous matrix.
  • the dimensions of such crystals parallel to the molecular chain direction typically range from 5 to 25 nm. In parallel, the crystals can be up to a few micrometers in size.
  • the crystals are raised compared to the amorphous regions, the transition between the crystalline and the amorphous region being characterized by a more or less sharp-edged transition, see FIG. 2, in which a melt-spun polymer thin film is shown.
  • the protrusion of the polymer crystals from the amorphous regions is understandable by the diffusion of individual macromolecules during crystallization from the amorphous phase in the direction of the denser packed crystal that forms.
  • uniaxially oriented polymer films as shown in FIG.
  • the desired nanowires can be produced by metallizing the surface topology in the course of oblique shading.
  • FIG. 3 shows a schematic cross section through a polymer thin film 8, in the surface of which crystalline 9 and amorphous regions 10 are provided.
  • the transition between a crystalline region 9 and an amorphous region 10 is characterized by a sharp edge line 11.
  • a sharp edge line 11 By obliquely shading this nanoscopically ordered surface topology with the aid of evaporation at a certain angle of incidence to the substrate surface (see the arrows drawn obliquely to the substrate surface), only the crystal flanks of the edge strips 11 facing the evaporator source and the crystal surfaces are metallized.
  • the vapor-deposited metal 12 decorates the crystals and forms elongated, wire-like metal geometries that extend longitudinally to the edges.
  • electrode structures are applied in such a way that the electrode edges are aligned perpendicular to the molecular chain direction and thus parallel to the nanowires produced.
  • a sensor structure has sharp spacing and size distributions with regard to the conductor structures provided between electrodes, which can be set by the physical history of the crystal. It is thus possible to set the surface topology as desired by specifically varying the crystallization temperature and the process temperature for producing the melt-spun polymer thin film.
  • the topology of the polymer thin films can be transferred by means of reactive ion etching into, for example, silicon or silicon oxide or ceramic substrates, on the surface of which nanowires can be applied by subsequent oblique shading.

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

L'invention concerne un procédé de fabrication de structures conductrices électriques dans le domaine nanométrique et leur utilisation dans un capteur biochimique impédimétrique. L'invention est caractérisée en ce qu'un ombrage oblique alimentant le substrat surfacique avec un matériau électroconducteur est réalisé de manière qu'avec utilisation d'un substrat surfacique diélectrique présentant une topographie de surface comportant une pluralité d'arêtes essentiellement parallèles, en saillie par rapport à la surface du substrat surfacique, le matériau électroconducteur se dépose de préférence sur les arêtes.
EP00975855A 1999-10-19 2000-10-06 Procede de fabrication de structures conductrices electriques dans le domaine nanometrique et utilisation en tant que capteur impedimetrique Withdrawn EP1222453A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE1999150378 DE19950378B4 (de) 1999-10-19 1999-10-19 Verfahren zur Herstellung eines impedimetrischen Sensors
DE19950378 1999-10-19
PCT/EP2000/009784 WO2001029549A2 (fr) 1999-10-19 2000-10-06 Procede de fabrication de structures conductrices electriques dans le domaine nanometrique et utilisation en tant que capteur impedimetrique

Publications (1)

Publication Number Publication Date
EP1222453A2 true EP1222453A2 (fr) 2002-07-17

Family

ID=7926182

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00975855A Withdrawn EP1222453A2 (fr) 1999-10-19 2000-10-06 Procede de fabrication de structures conductrices electriques dans le domaine nanometrique et utilisation en tant que capteur impedimetrique

Country Status (3)

Country Link
EP (1) EP1222453A2 (fr)
DE (1) DE19950378B4 (fr)
WO (1) WO2001029549A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10161447A1 (de) * 2001-12-14 2003-06-26 Caesar Stiftung Impedanzsensor
US7561332B2 (en) 2004-11-30 2009-07-14 Agoura Technologies, Inc. Applications and fabrication techniques for large scale wire grid polarizers
US7351346B2 (en) 2004-11-30 2008-04-01 Agoura Technologies, Inc. Non-photolithographic method for forming a wire grid polarizer for optical and infrared wavelengths
EP1772732A1 (fr) * 2005-10-07 2007-04-11 Innogenetics N.V. Réseaux d'électrodes interdigités par réplication de polymères pour des applications de (bio)-détection

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387165A (en) * 1982-04-22 1983-06-07 Youngblood James L H2 S Detector having semiconductor and noncontinuous inert film deposited thereon
US4674320A (en) * 1985-09-30 1987-06-23 The United States Of America As Represented By The United States Department Of Energy Chemoresistive gas sensor
DE4033658A1 (de) * 1990-10-23 1992-04-30 Siemens Ag Verfahren zur bearbeitung von grabenflanken in halbleitersubstraten
DE4143084A1 (de) * 1991-12-27 1993-07-01 Rudolf Prof Dr Hezel Verfahren zur herstellung einer solarzelle sowie solarzelle
DE4318519C2 (de) * 1993-06-03 1996-11-28 Fraunhofer Ges Forschung Elektrochemischer Sensor
DE4421407C1 (de) * 1994-06-18 1995-06-01 Kurz Leonhard Fa Flächenelement mit einer räumlichen, bereichsweise beschichteten Mikrostruktur sowie Verwendung eines solchen Flächenelements
DE4444585A1 (de) * 1994-12-14 1996-06-27 Siemens Ag Aufzeichnungsmedium zu einer hochdichten Datenspeicherung und Verfahren zu dessen Herstellung
DE69632921T2 (de) * 1995-12-01 2005-07-14 Innogenetics N.V. System und verfahren zur bestimmung der impedanz und herstellungsverfahren
DE19610115C2 (de) * 1996-03-14 2000-11-23 Fraunhofer Ges Forschung Detektion von Molekülen und Molekülkomplexen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0129549A3 *

Also Published As

Publication number Publication date
WO2001029549A2 (fr) 2001-04-26
WO2001029549A3 (fr) 2002-01-24
DE19950378A1 (de) 2001-05-10
DE19950378B4 (de) 2005-07-21

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