EP1307932A1 - Procede et dispositif permettant la realisation d'une structure organique en couches semi-conductrice et/ou electroluminescente - Google Patents
Procede et dispositif permettant la realisation d'une structure organique en couches semi-conductrice et/ou electroluminescenteInfo
- Publication number
- EP1307932A1 EP1307932A1 EP01949501A EP01949501A EP1307932A1 EP 1307932 A1 EP1307932 A1 EP 1307932A1 EP 01949501 A EP01949501 A EP 01949501A EP 01949501 A EP01949501 A EP 01949501A EP 1307932 A1 EP1307932 A1 EP 1307932A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- radiation
- substrate
- drying
- organic
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000001035 drying Methods 0.000 claims abstract description 26
- 239000012044 organic layer Substances 0.000 claims abstract description 14
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 12
- 239000006185 dispersion Substances 0.000 claims abstract description 10
- 230000005855 radiation Effects 0.000 claims description 57
- 239000007788 liquid Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000002156 adsorbate Substances 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000011156 evaluation Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005401 electroluminescence Methods 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 238000004886 process control Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 150000003384 small molecules Chemical class 0.000 claims description 3
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 claims description 2
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004132 cross linking Methods 0.000 claims description 2
- IIDFEIDMIKSJSV-UHFFFAOYSA-N dipropoxyphosphinothioyloxy-dipropoxy-sulfanylidene-$l^{5}-phosphane Chemical compound CCCOP(=S)(OCCC)OP(=S)(OCCC)OCCC IIDFEIDMIKSJSV-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000002985 plastic film Substances 0.000 claims description 2
- 229920006255 plastic film Polymers 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 1
- 230000009476 short term action Effects 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 230000008569 process Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
Definitions
- the invention relates to a method for producing a semiconducting and / or electroluminescent organic layer structure, in particular according to the preamble of claims 1 and 2, and an apparatus for performing this method.
- Electro-optical display units for electronic devices are today predominantly implemented in the form of liquid crystal (LCD) displays, the high level of technological development of which enables extremely cost-effective, easily controllable and also sufficiently long-lasting displays to be produced.
- LCD liquid crystal
- OLEDs organic light-emitting diodes
- OLEDs are based on so-called small molecules or polymers, which are arranged in a very thin layer or - as a so-called multilayer OLED - in several successive thin layers on a substrate coated with a conductive, transparent film. ' In the course of previous developments, a large number of substances exhibiting electroluminescent properties as well as a number of component configurations and technological implementation options were examined.
- the thin layers can be applied on the one hand by means of molecular beam epitaxy and on the other hand by spinning on solutions or dispersions with a very small proportion of the selected substance or the selected composition and subsequent drying to produce a solid organic thin layer.
- contact with water or steam must be prevented as strictly as in later operation. This also requires a thorough removal of water adsorbates from the substrate and an absolutely moisture-tight encapsulation of the finished display element.
- the invention is therefore based on the object of creating a generic method and a device for carrying it out, which enable the production of an electroluminescent properties or semiconductor properties showing organic layer structure with high productivity and low costs.
- this object is primarily achieved by a method with the features of claims 1 or 2 and - according to relatively independent forms of the inventive concept - by methods with the features of claims 8 to 11.
- the object is achieved by a device with the features of claim 17.
- the invention closes the basic idea of the use of electromagnetic radiation with an essential active component in the near infrared range, in particular in the wavelength range between 0.8 ⁇ m and 1.5 ⁇ m, for drying a liquid layer applied to the substrate to form an organic one Thin layer with semiconducting egg properties or electroluminescent properties.
- NIR radiation near infrared
- auxiliary processes such as the removal of water adsorbates from the substrate and / or the drying of photoresist layers for the photolithographic structuring of the substrate and / or for drying or Crosslinking an adhesive used in the encapsulation of the organic thin layer (s) as encapsulation material.
- the solution or dispersion is formed with an organic solvent which is particularly volatile under the influence of NIR radiation.
- an organic solvent which is particularly volatile under the influence of NIR radiation.
- the substrate for the organic thin layer is preferably a thin ceramic plate or a thin (for certain applications particularly flexible) glass plate.
- the carrier can also be formed by a plastic film or plate, provided that it is sufficiently resistant to moisture diffusion. If necessary, this can be ensured by vapor deposition, sputtering or the like of a special moisture diffusion barrier. With substrates of the latter types, curved and flexible display elements can advantageously be produced which cannot be easily implemented with comparable mechanical properties on the basis of other display principles.
- the organic thin layer is expediently produced by spin-coating a solution or dispersion with a proportion of the organic composition between 0.2 and 10% by weight, preferably between 0.5 and 3% by weight, with a
- the organic composition comprises polymers or small molecules, especially soluble alkoxyphenyl PPV systems, TAD, MTDATA, Alq 3 , NPD, DCM, DPVBi, CuPc, OYC and / or rare earth complexes or other active compounds that have semiconducting or electroluminescent properties in the thin layer to lend.
- These substances are temperature sensitive, so that an appropriate limitation of the process temperature in the thin layer is necessary.
- the NIR treatment is particularly suitable for this due to the very short drying time and the precise adjustability of the drying process by controlling the radiation. As a rule, this temperature should be below 100 ° C.
- auxiliary processes already briefly mentioned above in the manufacture of electronic circuits from semiconducting organic layer structures or of display units from organic layers with electroluminescent properties include, in particular, the removal of water adsorbates from the substrate surface (or the area that comes into contact with the thin layer to be applied) by short-term NIR - radiation.
- the production of a multilayer OLED structure is advantageously possible in particular by successive application with subsequent NIR irradiation of several liquid layers, each with a specific organic composition.
- the radiation parameters are specifically matched to the specific layer in the layer sequence. Otherwise, the generation of multilayer circuit structures with organic semiconductor thin layers is also possible.
- NIR radiation is also useful for the encapsulation of the display or electronic circuit elements, which is indispensable due to the moisture sensitivity of the organic thin layers, because the adhesives or encapsulation materials (polymers) used can be dried and crosslinked in a productive and cost-effective manner ,
- NIR radiation gains particular advantages in the combined application for several of the process steps mentioned, since the same, comparatively uncomplicated and only a small amount of handling drying system can be used for this.
- the radiation source preferably comprises a reflector which essentially has the cross-section of an ellipse or parabola section, in order to produce an in particular essentially rectangular radiation zone in which the substrate with the liquid thin layer is located or through which it is conveyed during the drying step.
- the power density, measured on the surface of the organic thin layer, is preferably at or above 150 kW / m 2 , especially above 500 kW / m 2 .
- the radiation device By adjusting the size of the radiation zone in accordance with the radiation power of the emitter used, depending on the respective substrate size, either full-area or scanning radiation of the substrate can be realized.
- the radiation device also comprises a movement device for scanning movement of the radiation source over the substrate or for conveying the substrate through the radiation zone.
- a movement device for scanning movement of the radiation source over the substrate or for conveying the substrate through the radiation zone.
- stationary full-area irradiation can make sense.
- the drying effect of the NIR radiation is increased by guiding a protective and drying gas stream over the surface of the liquid layer or the substrate (in particular essentially parallel to this).
- the high-purity inert gas used for this also prevents air and moisture from entering the highly sensitive organic thin film, thus ensuring a high yield.
- the radiation device comprises at least one measuring device for detecting at least one physical quantity of the liquid layer, in particular its temperature and / or moisture content and / or reflectivity and / or refractive index.
- the irradiation can be controlled "manually" on the basis of the measurement results - in particular if it essentially comprises the presetting of an irradiation parameter (or several irradiation parameters) as a function of a previously measured variable.
- the radiation control device has at least one control input, via which it is at least indirectly connected to a measuring device and receives a measurement signal or evaluation result in such a way that the radiation parameters are set on the basis of the measurement signal or evaluation result.
- the control of the radiation parameters includes, in particular, control of the radiator temperature (for example via the applied voltage) and / or the effective radiation power, for example by changing the distance between the radiator or reflector and the layer to be treated.
- a further expedient control option consists in partial imaging and / or filtering of the NIR radiation by means of a suitable diaphragm or closure device or a band or edge filter. In this way, in particular for certain process steps, undesired components of the total radiation spectrum or certain areas of the radiation zone of the lamp-reflector arrangement can be masked out.
- NIR radiation sources also in the NIR range, imitating light-emitting diodes (NIR-LED) or laser diodes can be used in the proposed method and the device according to the invention.
- NIR LEDs or NIR laser diodes are then - depending on the specific application - provided individually or in small groups or (preferably) in diode arrays of a shape adapted to the shape of the desired radiation zone. Because of the radiation properties, they do not need a reflector directly assigned to them; in particular, the use of counter reflectors can be advantageous depending on the absorption properties of the workpiece.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
La présente invention concerne un procédé de réalisation d'une structure organique en couches semi-conductrice destinée à être utilisée dans un circuit électronique, notamment dans un circuit logique et/ou mémoire. Selon l'invention, un substrat est recouvert d'une solution ou d'une dispersion ayant une faible teneur en un composé organique jusqu'à obtention d'une épaisseur de couche humide, et une couche mince organique, adhérant au substrat, ayant des propriétés semi-conductrices, est formée par séchage, avec une épaisseur de couche sèche inférieure sensiblement, notamment d'un ordre de grandeur ou plus, à l'épaisseur de couche humide, le séchage étant réalisé grâce à l'application de courte durée d'un rayonnement électromagnétique dont le champ d'action principal est situé dans l'infrarouge proche, notamment dans l'intervalle compris entre 0,8 et 1,5 mu m.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10038895 | 2000-08-09 | ||
| DE10038895A DE10038895B4 (de) | 2000-08-09 | 2000-08-09 | Verfahren und Verwendung einer Vorrichtung zur Herstellung eines halbleitenden und/oder Elektrolumineszenz zeigenden organischen Schichtaufbaus |
| PCT/EP2001/008491 WO2002013285A1 (fr) | 2000-08-09 | 2001-07-23 | Procede et dispositif permettant la realisation d'une structure organique en couches semi-conductrice et/ou electroluminescente |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1307932A1 true EP1307932A1 (fr) | 2003-05-07 |
Family
ID=7651869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP01949501A Withdrawn EP1307932A1 (fr) | 2000-08-09 | 2001-07-23 | Procede et dispositif permettant la realisation d'une structure organique en couches semi-conductrice et/ou electroluminescente |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7087453B2 (fr) |
| EP (1) | EP1307932A1 (fr) |
| KR (1) | KR100905282B1 (fr) |
| AU (1) | AU2001270640A1 (fr) |
| DE (1) | DE10038895B4 (fr) |
| WO (1) | WO2002013285A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10153445A1 (de) * | 2001-10-30 | 2003-05-22 | Covion Organic Semiconductors | Trocknungsverfahren |
| JP2005215024A (ja) * | 2004-01-27 | 2005-08-11 | Fuji Photo Film Co Ltd | 乾燥装置及び乾燥方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0653132A (ja) * | 1992-07-31 | 1994-02-25 | Nippon Telegr & Teleph Corp <Ntt> | 有機薄膜の製造方法及び有機薄膜作製装置 |
| US5498761A (en) * | 1988-10-11 | 1996-03-12 | Wessling; Bernhard | Process for producing thin layers of conductive polymers |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| LU84911A1 (fr) * | 1983-07-14 | 1985-04-17 | Cockerill Sambre Sa | Procede et installation de cuisson d'un revetement organique applique sur un support |
| JPS61277958A (ja) * | 1985-05-31 | 1986-12-08 | Mita Ind Co Ltd | 有機感光体の乾燥方法 |
| JPS6242152A (ja) * | 1985-08-15 | 1987-02-24 | Fuji Photo Film Co Ltd | 画像形成方法 |
| US5154808A (en) * | 1987-06-26 | 1992-10-13 | Fuji Photo Film Co., Ltd. | Functional organic thin film and process for producing the same |
| DE3725134A1 (de) * | 1987-07-29 | 1989-02-09 | Basf Ag | Flaechenfoermiges, mehrschichtiges, laseroptisches aufzeichnungsmaterial |
| US5464480A (en) * | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| US5700696A (en) * | 1993-11-08 | 1997-12-23 | Lucent Technologies Inc. | Method for preparation of conjugated arylene or heteroarylene vinylene polymer and device including same |
| JP3463362B2 (ja) * | 1993-12-28 | 2003-11-05 | カシオ計算機株式会社 | 電界発光素子の製造方法および電界発光素子 |
| US5709974A (en) * | 1996-09-27 | 1998-01-20 | Xerox Corporation | High speed electrophotographic imaging member |
| JPH10261484A (ja) * | 1997-03-19 | 1998-09-29 | Minolta Co Ltd | 有機エレクトロルミネセンス素子およびその製造方法 |
| WO1999019900A2 (fr) * | 1997-10-14 | 1999-04-22 | Patterning Technologies Limited | Procede de formation d'un dispositif electronique |
| JP4003273B2 (ja) * | 1998-01-19 | 2007-11-07 | セイコーエプソン株式会社 | パターン形成方法および基板製造装置 |
| US6087196A (en) * | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
| US5976744A (en) * | 1998-10-29 | 1999-11-02 | Xerox Corporation | Photoreceptor overcoatings containing hydroxy functionalized aromatic diamine, hydroxy functionalized triarylamine and crosslinked acrylated polyamide |
| US6103436A (en) * | 1998-10-29 | 2000-08-15 | Xerox Corporation | Overcoated photoreceptors and methods of using overcoated photoreceptors |
| DE19851703A1 (de) * | 1998-10-30 | 2000-05-04 | Inst Halbleiterphysik Gmbh | Verfahren zur Herstellung von elektronischen Strukturen |
| DE10035430B4 (de) * | 2000-07-20 | 2005-06-16 | Advanced Photonics Technologies Ag | Verfahren und Vorrichtung zur thermischen Behandlung einer Fotolackschicht auf einem Schaltungssubstrat, insbesondere Halbleiterwafer |
-
2000
- 2000-08-09 DE DE10038895A patent/DE10038895B4/de not_active Expired - Fee Related
-
2001
- 2001-07-23 KR KR1020037001959A patent/KR100905282B1/ko not_active Expired - Fee Related
- 2001-07-23 WO PCT/EP2001/008491 patent/WO2002013285A1/fr not_active Ceased
- 2001-07-23 AU AU2001270640A patent/AU2001270640A1/en not_active Abandoned
- 2001-07-23 US US10/344,259 patent/US7087453B2/en not_active Expired - Fee Related
- 2001-07-23 EP EP01949501A patent/EP1307932A1/fr not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5498761A (en) * | 1988-10-11 | 1996-03-12 | Wessling; Bernhard | Process for producing thin layers of conductive polymers |
| JPH0653132A (ja) * | 1992-07-31 | 1994-02-25 | Nippon Telegr & Teleph Corp <Ntt> | 有機薄膜の製造方法及び有機薄膜作製装置 |
Non-Patent Citations (2)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN * |
| See also references of WO0213285A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US7087453B2 (en) | 2006-08-08 |
| KR20030051614A (ko) | 2003-06-25 |
| AU2001270640A1 (en) | 2002-02-18 |
| US20040241901A1 (en) | 2004-12-02 |
| KR100905282B1 (ko) | 2009-06-30 |
| DE10038895B4 (de) | 2006-04-06 |
| WO2002013285A1 (fr) | 2002-02-14 |
| DE10038895A1 (de) | 2002-02-28 |
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