EP1483063A1 - Procede et dispositif de decontamination de surfaces optiques - Google Patents

Procede et dispositif de decontamination de surfaces optiques

Info

Publication number
EP1483063A1
EP1483063A1 EP03718683A EP03718683A EP1483063A1 EP 1483063 A1 EP1483063 A1 EP 1483063A1 EP 03718683 A EP03718683 A EP 03718683A EP 03718683 A EP03718683 A EP 03718683A EP 1483063 A1 EP1483063 A1 EP 1483063A1
Authority
EP
European Patent Office
Prior art keywords
cleaning
radiation
atmosphere
decontamination
further characterized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP03718683A
Other languages
German (de)
English (en)
Other versions
EP1483063B1 (fr
Inventor
Jens LÜDECKE
Christoph Zazcek
Alexandra Pazidis
Jens Ullmann
Annette MÜHLPFORDT
Michael Thier
Stefan Wiesner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of EP1483063A1 publication Critical patent/EP1483063A1/fr
Application granted granted Critical
Publication of EP1483063B1 publication Critical patent/EP1483063B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation

Definitions

  • the invention relates to a method and a device for the decontamination of surfaces of beam-guiding optics using UV radiation in a cleaning atmosphere.
  • Methods and devices of this type are used, for example, for the decontamination of surfaces of lenses and other optical elements in beam-guiding optics, such as in microlithography projection exposure systems.
  • a decontamination method used for this and an associated decontamination device integrated in a microlithography projection exposure system are described in the published patent application DE 198 30 438 A1.
  • a second UV light source serving as a decontamination light source is provided, for example a broadband DUV excimer laser or a 222 nm UV excimer lamp.
  • the de- integrated into the projection exposure system Contamination light source is activated during exposure pauses of the exposure light source.
  • a cleaning gas stream is directed onto the surfaces to be cleaned, for which purpose the use of an ozone-containing or oxygen-containing gas stream is proposed.
  • the latter is to be understood as a gas stream with a higher oxygen content than air, since this procedure is based on the idea that a sufficient cleaning effect requires a correspondingly high oxygen concentration in the cleaning gas stream.
  • This cleaning effect by a combination of UV radiation and oxygen-rich or ozone-containing gas is also known for the decontamination of substrate surfaces, such as surfaces of glass substrates and wafers, see, for example, laid-open publication JP 07-2888109 A, in which the combination of Xe excimer radiation eg a wavelength of 172 nm in combination with an ozone-containing cleaning atmosphere or an air atmosphere is proposed.
  • the oxygen is considered necessary for the oxidation of organic contaminants and for the formation of hydrophilic groups in the appropriate concentration.
  • the fact that the range of UV cleaning radiation in the wavelength range around 172 nm is relatively small due to high oxygen absorption is countered by the fact that the surface to be cleaned is sufficiently close, e.g. less than 3mm, to which UV cleaning light source is led or UV cleaning radiation of higher wavelength e.g. 185nm or 254nm is used.
  • a cleaning of surfaces of beam-guiding optics which are designed to guide relatively short-wave laser radiation of, for example, 157 nm, is possible with laser radiation of the same wavelength, but in practice it is very complex and limited to relatively small areas of a few square millimeters to be cleaned.
  • the invention is based on the technical problem of providing a method and a device of the type mentioned at the outset with which surfaces of beam-guiding optics, in particular optics for guiding beams of DUV laser radiation in the wavelength range around 157 nm and less, can be covered over relatively large surface areas with relatively little effort can be reliably decontaminated from disruptive impurities.
  • the invention solves this problem by providing a method with the features of claim 1 and an apparatus with the features of claim 4.
  • UV radiation with a wavelength that lies in a region of strong oxygen absorption is used for decontamination, and the problem of a short range due to the high absorption of the decontamination radiation is countered by using radiation with a comparatively low oxygen concentration as the cleaning atmosphere that is smaller than that of air.
  • radiation with a comparatively low oxygen concentration as the cleaning atmosphere that is smaller than that of air.
  • the oxygen concentration of the cleaning atmosphere is kept below 1%, preferably below 0.1%.
  • the decontamination radiation from a Xe discharge lamp with a wavelength of 172nm or generated by a low-pressure mercury lamp In both cases, compared to the use of short-wave laser radiation in the wave range around 157 nm, there is a significantly lower effort with sufficient cleaning effect.
  • a decontamination device developed according to claim 7 comprises a cleaning chamber with a cleaning area in which e.g. optical elements can be placed for cleaning their surfaces.
  • a cleaning area in which e.g. optical elements can be placed for cleaning their surfaces.
  • the decontamination device is integrated in an optical assembly, so that the surfaces of its optical elements can be cleaned from time to time even after the assembly has been started up.
  • the optical assembly is part of a microlithography projection exposure system, so that the surfaces of its optical elements can be cleaned as required.
  • FIG. 1 is a schematic side view of a cleaning chamber for surface decontamination of optical elements to be placed therein,
  • FIG. 2 shows a diagram of the total transmission as a function of the wavelength for in the device according to FIG. 1 with different NEN partial oxygen presses cleaned cleaning elements and the cleaning atmosphere
  • FIG. 3 shows a comparison diagram of the transmission as a function of the decontamination time for an optical element decontaminated with the device of FIG. 1 in comparison with an optical element decontaminated with 157 nm laser radiation.
  • the decontamination device includes a gas-tight cleaning chamber 1, in which a plurality of UV lamps 2 are arranged at a distance from one another on an upper side of the chamber 1 in such a way that they emit UV radiation to a chamber center region that acts as a cleaning area.
  • Optical elements can be introduced into the cleaning area for the purpose of decontamination or cleaning of their surfaces, as an example in FIG. 1 a lens 3 with an associated mount.
  • a cleaning gas flow can be led over the cleaning area in the chamber 1, for which purpose the chamber 1 is provided with a gas inlet 4 in a first chamber side area and with a gas outlet 5 in an opposite, second chamber side area.
  • the associated gas supply and gas discharge system is conventional and is therefore not explicitly shown in FIG. 1.
  • Xenon discharge lamps which emit excimer radiation as a continuum with a bandwidth of approx. 13 nm around a central wavelength of 172 nm, serve as the UV lamp 2. Due to the spaced arrangement of the plurality of UV emitters 2, the decontamination radiation reaches the cleaning area at different angles and with a fairly uniform intensity across the cleaning area, so that the surface of the optical element 3 to be cleaned facing the UV emitters 2 has a large area and evenly from the Decontamination radiation can be applied. As a result, both essentially flat and highly non-planar surfaces can be cleaned reliably. Suitable reflectors can be attached to the back to increase the intensity. It goes without saying that, depending on the application, the UV lamps 2 can alternatively be arranged in a different way at suitable locations of the cleaning chamber 1 instead of on one side of the chamber 1 as shown.
  • a support is preferably provided in the cleaning area, on which the optical element 3 to be cleaned is mounted and which is held in the chamber 1 so as to be movable in height, as symbolically indicated in FIG. 1 by a height adjustment arrow H. If necessary, additional mobility of the carrier can be provided, e.g. such that the optical element 3 to be cleaned can be rotated in the cleaning area of the chamber 1.
  • the radiation wavelength of 172 nm chosen for the UV lamps 2 proves to be particularly efficient for ozone production, since it is close to the absorption maximum of molecular oxygen (0 2 ).
  • the Xe discharge lamps used for this purpose have a high UV radiation efficiency, which keeps the thermal load on the optical element 3 to be cleaned low.
  • Suitable Xe excimer emitters are commercially available in various designs, for example from the company Radium in Wipper Solutionsth.
  • the use of mercury low-pressure lamps with emission lines in the range of 185nm and 254nm is possible, but their spectral intensity in the very deep (VUV) wavelength range is lower than that of Xe discharge lamps.
  • the oxygen absorption coefficient is of the order of 5 cm "1 , which is a half-value range of 1.4 mm in pure oxygen and approx. 7 mm in air.
  • any concentration values between 0% and the atmospheric oxygen concentration are selected for the cleaning atmosphere, preferably of at most about 1% and even more preferably of at most 0.1%.
  • the latter results in a half-value range of 10 cm and more, which means that even strongly curved surfaces and / or surfaces of small assemblies can easily be adequately exposed to the decontamination radiation and thus cleaned sufficiently. It has been shown that even clearly contaminated surfaces can be effectively cleaned with an oxygen concentration of approx. 0.1%.
  • Inert gas which is as clean as possible, such as nitrogen, is passed as the cleaning gas stream over the cleaning area, to which oxygen is admixed in the desired, low concentration.
  • the contaminants to be removed are primarily hydrocarbons (C x H y ) and water (H 2 0). It turns out that with low contamination by hydrocarbons, an oxygen admixture in the inert gas cleaning gas stream can often be completely dispensed with, the residual oxygen content in the inert gas stream then typically only a few ppm down to almost oxygen-free atmospheres with 0 2 concentrations below 0. Is 1 ppm.
  • the range of the 172 nm decontamination radiation is then no longer limited by absorption and results exclusively from the geometric arrangement of the UV lamps 2.
  • the walls of the cleaning chamber 1 preferably consist of a material resistant to VUV radiation, such as degreased and electropolished stainless steel. Gas flows between 5 slm and 50 slm are suitable for the cleaning gas flow.
  • the cleaning gas inlet 4 can be used as a gas see be designed with which the cleaning gas can be directed to the surfaces to be cleaned.
  • the cleaning effect at very low oxygen concentrations can be attributed to the activation or breaking of bonds of the hydrocarbon molecules by the UV radiation, which then partially desorb as C x Hy molecules, partly from the ozone that is formed from any residual oxygen present, to C0 and H 2 0 are oxidized and then desorb. It has been shown that this decontamination technique, which combines a UV radiation field 2 for large-area surface irradiation with an oxygen-poor or oxygen-free cleaning atmosphere, can effectively and economically decontaminate optical elements and assemblies constructed from them. Compared to cleaning with 157nm laser radiation, the decontamination process used here is significantly less complex and allows a significantly larger cleaning, which is not limited to a few mm 2 .
  • FIG. 2 illustrates the results of a series of experiments in which similar surfaces of optical elements provided with an anti-reflective coating were cleaned with 172 nm Xe excimer radiation, as described above, using a cleaning atmosphere with different oxygen partial pressures.
  • the total transmission GT ie the sum of the reflection component R and the transmission component T, was then determined for radiation directed at the cleaned optical elements as a function of the wavelength for a wavelength range between 120 nm and 230 nm.
  • Cleaning atmospheres with four different oxygen concentrations between 0.34% and 15.8% were used.
  • FIG. 2 in all four cases len a similarly good cleaning effect, which leads to a total transmittance GT for 157nm laser radiation of approx. 80% and increases even further up to close to 100% for longer wavelengths.
  • FIG. 3 shows a comparison of the procedure according to the invention with the more complex 157 nm laser radiation cleaning, which can only be carried out over a small area.
  • the test series of FIG. 3 is based on a cleaning process according to the invention using a 172 nm Xe excimer radiation on the one hand and a cleaning process with 157 nm laser radiation with an energy density of 2 mJ / cm 2 on the other hand, in each case a surface of an optical element provided with an anti-reflective coating.
  • 3 shows the cleaning effect on the basis of the transmittance of the optical element that results after the cleaning process, as a function of the irradiation time in the cleaning process. As can be seen from FIG.
  • the cleaning process according to the invention with the less complex xe-excimer radiation of 172 nm leads to a cleaning effect which is comparable to that of the complex 157 nm laser radiation, with an even higher transmittance for the decontamination process according to the invention being determined for longer radiation periods.
  • the decontamination device in the exemplary embodiment of FIG. 1 serves to clean individual optical elements or assemblies in the cleaning chamber 1 prior to their actual use for guiding the beam in a corresponding optic
  • alternative implementations of the invention provide a beam-guiding optic even after it has been installed and To be able to decontaminate commissioning in the manner according to the invention.
  • the decontamination device then forms an integral part of the device which contains the beam-guiding optics.
  • the decontamination device can be part of a microlithography projection exposure system in that, in addition to its beam-guiding optics, one or more UV Decontamination radiation sources are placed at a suitable location and a cleaning gas purging system is implemented, as described for other decontamination devices, for example in the prior art mentioned at the outset, so that this does not require any further illustration and explanation here.
  • the lenses and other optical elements of the projection exposure assembly can from time to time not only do the surface decontamination process not only in the production process before, during and after a coating process, but also during and after assembly and adjustment of the optics after the exposure system has been started up using, for example, 172 nm Xe excimer radiation in combination with an oxygen-poor to oxygen-free cleaning gas stream.

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  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Road Signs Or Road Markings (AREA)

Abstract

Procédé et dispositif de décontamination de surfaces optiques conductrices de faisceaux à l'aide du rayonnement UV dans une atmosphère de nettoyage. Selon la présente invention, la longueur d'onde du rayonnement UV utilisé se trouve dans une plage de forte absorption de l'oxygène et l'atmosphère de nettoyage possède une concentration en oxygène inférieure à celle de l'air.
EP03718683A 2002-03-12 2003-03-11 Procede et dispositif de decontamination de surfaces optiques Expired - Lifetime EP1483063B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10211611A DE10211611A1 (de) 2002-03-12 2002-03-12 Verfahren und Vorrichtung zur Dekontamination optischer Oberflächen
DE10211611 2002-03-12
PCT/EP2003/002464 WO2003076086A1 (fr) 2002-03-12 2003-03-11 Procédé et dispositif de décontamination de surfaces optiques

Publications (2)

Publication Number Publication Date
EP1483063A1 true EP1483063A1 (fr) 2004-12-08
EP1483063B1 EP1483063B1 (fr) 2006-10-04

Family

ID=27771366

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03718683A Expired - Lifetime EP1483063B1 (fr) 2002-03-12 2003-03-11 Procede et dispositif de decontamination de surfaces optiques

Country Status (10)

Country Link
US (1) US6796664B2 (fr)
EP (1) EP1483063B1 (fr)
JP (1) JP2005519738A (fr)
KR (1) KR20040091718A (fr)
CN (1) CN1638883A (fr)
AT (1) ATE341405T1 (fr)
AU (1) AU2003222757A1 (fr)
DE (2) DE10211611A1 (fr)
TW (1) TW200306461A (fr)
WO (1) WO2003076086A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ305097B6 (cs) * 2014-01-30 2015-04-29 Masarykova Univerzita Způsob snížení nebo odstranění organické a anorganické kontaminace vakuového systému zobrazovacích a analytických zařízení a zařízení k jeho provádění

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JP2004005923A (ja) * 2002-03-29 2004-01-08 Fujitsu Ltd 磁気ヘッドの製造方法および磁気ヘッド、パターン形成方法
US20060119811A1 (en) 2004-12-07 2006-06-08 Asml Netherlands B.V. Radiation exposure apparatus comprising a gas flushing system
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WO2009146744A1 (fr) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Procédé pour traiter des surfaces, émetteur de rayonnement pour ce procédé ainsi que système d'irradiation avec cet émetteur de rayonnement
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EP4170421A1 (fr) * 2021-10-25 2023-04-26 ASML Netherlands B.V. Procédé de nettoyage et appareil de métrologie à source d'éclairage associée
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CZ305097B6 (cs) * 2014-01-30 2015-04-29 Masarykova Univerzita Způsob snížení nebo odstranění organické a anorganické kontaminace vakuového systému zobrazovacích a analytických zařízení a zařízení k jeho provádění

Also Published As

Publication number Publication date
JP2005519738A (ja) 2005-07-07
ATE341405T1 (de) 2006-10-15
DE10211611A1 (de) 2003-09-25
CN1638883A (zh) 2005-07-13
DE50305261D1 (de) 2006-11-16
TW200306461A (en) 2003-11-16
AU2003222757A1 (en) 2003-09-22
US20030210458A1 (en) 2003-11-13
WO2003076086A1 (fr) 2003-09-18
US6796664B2 (en) 2004-09-28
KR20040091718A (ko) 2004-10-28
EP1483063B1 (fr) 2006-10-04

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