EP1492994A4 - Procede et dispositif de cartographie de miroir de platine - Google Patents

Procede et dispositif de cartographie de miroir de platine

Info

Publication number
EP1492994A4
EP1492994A4 EP03714507A EP03714507A EP1492994A4 EP 1492994 A4 EP1492994 A4 EP 1492994A4 EP 03714507 A EP03714507 A EP 03714507A EP 03714507 A EP03714507 A EP 03714507A EP 1492994 A4 EP1492994 A4 EP 1492994A4
Authority
EP
European Patent Office
Prior art keywords
stage mirror
mirror mapping
mapping
stage
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03714507A
Other languages
German (de)
English (en)
Other versions
EP1492994A2 (fr
Inventor
Henry Allen Hill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zygo Corp
Original Assignee
Zygo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/217,531 external-priority patent/US6700665B2/en
Application filed by Zygo Corp filed Critical Zygo Corp
Publication of EP1492994A2 publication Critical patent/EP1492994A2/fr
Publication of EP1492994A4 publication Critical patent/EP1492994A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/02007—Two or more frequencies or sources used for interferometric measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02019—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different points on same face of object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02027—Two or more interferometric channels or interferometers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70—Using polarization in the interferometer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
EP03714507A 2002-04-09 2003-04-04 Procede et dispositif de cartographie de miroir de platine Withdrawn EP1492994A4 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US217531 1994-03-24
US37117202P 2002-04-09 2002-04-09
US371172P 2002-04-09
US10/217,531 US6700665B2 (en) 2001-08-20 2002-08-13 Interferometric apparatus for measuring the topography of mirrors in situ and providing error correction signals therefor
PCT/US2003/010212 WO2003087710A2 (fr) 2002-04-09 2003-04-04 Procede et dispositif de cartographie de miroir de platine

Publications (2)

Publication Number Publication Date
EP1492994A2 EP1492994A2 (fr) 2005-01-05
EP1492994A4 true EP1492994A4 (fr) 2010-07-28

Family

ID=29254154

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03714507A Withdrawn EP1492994A4 (fr) 2002-04-09 2003-04-04 Procede et dispositif de cartographie de miroir de platine

Country Status (3)

Country Link
EP (1) EP1492994A4 (fr)
JP (1) JP4458855B2 (fr)
WO (1) WO2003087710A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7528962B2 (en) * 2005-06-29 2009-05-05 Zygo Corporation Apparatus and methods for reducing non-cyclic non-linear errors in interferometry
US7853067B2 (en) * 2006-10-27 2010-12-14 Asml Holding N.V. Systems and methods for lithographic reticle inspection
US8937707B2 (en) 2011-08-23 2015-01-20 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and method of calibrating a displacement measuring system
NL2022663A (en) 2018-03-29 2019-10-03 Asml Netherlands Bv Position measurement system, interferometer system and lithographic apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371588A (en) * 1993-11-10 1994-12-06 University Of Maryland, College Park Surface profile and material mapper using a driver to displace the sample in X-Y-Z directions
US5464715A (en) * 1993-04-02 1995-11-07 Nikon Corporation Method of driving mask stage and method of mask alignment
US20010035959A1 (en) * 2000-05-19 2001-11-01 Hill Henry Allen In-situ mirror characterization

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151749A (en) * 1989-06-08 1992-09-29 Nikon Corporation Method of and apparatus for measuring coordinate position and positioning an object
JP3295846B2 (ja) * 1989-06-08 2002-06-24 株式会社ニコン 位置測定方法、位置測定装置、位置決め方法、位置決め装置、および露光装置
JPH04351905A (ja) * 1991-05-30 1992-12-07 Fujitsu Ltd レーザ測長装置を備えたｘｙステージ
US5363196A (en) * 1992-01-10 1994-11-08 Ultratech Stepper, Inc. Apparatus for measuring a departure from flatness or straightness of a nominally-plane mirror for a precision X-Y movable-stage
JPH07253304A (ja) * 1994-03-15 1995-10-03 Nikon Corp 多軸位置決めユニットおよびこれにおける測長方法
JPH09162113A (ja) * 1995-12-04 1997-06-20 Nikon Corp 直交度測定方法及びステージ装置並びに露光装置
US6486955B1 (en) * 1998-10-14 2002-11-26 Nikon Corporation Shape measuring method and shape measuring device, position control method, stage device, exposure apparatus and method for producing exposure apparatus, and device and method for manufacturing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5464715A (en) * 1993-04-02 1995-11-07 Nikon Corporation Method of driving mask stage and method of mask alignment
US5371588A (en) * 1993-11-10 1994-12-06 University Of Maryland, College Park Surface profile and material mapper using a driver to displace the sample in X-Y-Z directions
US20010035959A1 (en) * 2000-05-19 2001-11-01 Hill Henry Allen In-situ mirror characterization

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZANONI C: "DIFFERENTIAL INTERFEROMETER ARRANGEMENTS FOR DISTANCE AND ANGLE MEASUREMENTS: PRINCIPLES, ADVANTAGES AND APPLICATIONS", VDI BERICHTE, DUESSELDORF, DE, no. 749, 1 January 1989 (1989-01-01), pages 93 - 106, XP001028012, ISSN: 0083-5560 *

Also Published As

Publication number Publication date
JP4458855B2 (ja) 2010-04-28
EP1492994A2 (fr) 2005-01-05
WO2003087710A3 (fr) 2003-12-18
JP2005522683A (ja) 2005-07-28
WO2003087710A2 (fr) 2003-10-23

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

A4 Supplementary search report drawn up and despatched

Effective date: 20100624

RIC1 Information provided on ipc code assigned before grant

Ipc: G01B 9/02 20060101AFI20031031BHEP

Ipc: G01B 11/24 20060101ALI20100618BHEP

STAA Information on the status of an ep patent application or granted ep patent

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