EP1581673A2 - Anode zur galvanisierung - Google Patents
Anode zur galvanisierungInfo
- Publication number
- EP1581673A2 EP1581673A2 EP03813909A EP03813909A EP1581673A2 EP 1581673 A2 EP1581673 A2 EP 1581673A2 EP 03813909 A EP03813909 A EP 03813909A EP 03813909 A EP03813909 A EP 03813909A EP 1581673 A2 EP1581673 A2 EP 1581673A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- anode
- shield
- anode according
- active layer
- electroplating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 23
- 239000012876 carrier material Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 239000000654 additive Substances 0.000 abstract description 18
- 230000000996 additive effect Effects 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 238000006731 degradation reaction Methods 0.000 abstract description 7
- 239000010936 titanium Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- UGWKCNDTYUOTQZ-UHFFFAOYSA-N copper;sulfuric acid Chemical compound [Cu].OS(O)(=O)=O UGWKCNDTYUOTQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005246 galvanizing Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- -1 platinum metals Chemical class 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000003011 anion exchange membrane Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000003010 cation ion exchange membrane Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000007857 degradation product Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- PGGZKNHTKRUCJS-UHFFFAOYSA-N methanesulfonic acid;tin Chemical compound [Sn].CS(O)(=O)=O PGGZKNHTKRUCJS-UHFFFAOYSA-N 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000004832 voltammetry Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
Definitions
- the invention relates to an anode for electroplating.
- insoluble anodes are known from the prior art. These generally consist of a carrier material and an active layer. Titanium, niobium and others are usually used as the carrier material. In any case, however, materials are used that are self-passivating under the electrolysis conditions. For example, nickel can also be used in alkaline baths.
- the active layer is usually an electron-conducting layer. It usually consists of materials such as platinum, iridium, mixed oxides with platinum metals or diamond.
- the active layer can be located directly on the surface of the carrier material, but it can also be located on a substrate which is attached to the carrier material at a distance from it. Such materials, for example, can also serve as the substrate, which can also be considered as a carrier material.
- additives are added to the baths that act as brighteners, increase hardness and increase scatter. These are mostly organic compounds.
- the invention also relates to the method for electroplating according to claim 12 and the use of the anode according to claim 13.
- the invention further relates to an anode according to claims 14 to 17, a method for electroplating according to claim 18 and the use of the anode according to claim 19.
- the anode for galvanization according to the invention is characterized in that it has an anode base body and a shield, the anode base body having a carrier material and an active layer, the shield being attached to the anode base body at a distance therefrom and the substance - transport to and away from the anode base body is reduced.
- the anode according to the invention is preferably an anode in which the carrier material is self-passivating under electrolysis conditions.
- the active layer is preferably electron-conducting.
- the shield can consist of plastic.
- the shield consists of metal. This metal should be largely corrosion resistant under anode conditions. It is furthermore particularly preferred if the shield consists of a metal mesh, an expanded metal or a perforated plate.
- the shielding is made of plastic and metal, since various desirable material properties can be combined with one another in this way.
- the metallic shielding can effect an additional potential, while an effective transport obstacle is more easily achieved with plastic.
- a combination of two metal grids and a fine tissue or a membrane made of plastic located between them therefore forms a preferred embodiment of the present invention.
- a particular advantage of this arrangement is the very simple assembly.
- the shielding of the anode according to the invention is electrically conductively connected to the anode base body. Because the shield is also set to anodic potential, positively charged additives must also overcome an electrostatic barrier in addition to the mechanical barrier. The efficiency of shielding mung can be significantly increased. A metallic shield charged in this way acts electrostatically, but cannot act electrochemically due to the oxide layer forming on the surface of the shield.
- the shielding is in particular at a distance from the anode base body of 0.01 to 100 mm, preferably 0.05 to 50 mm, particularly preferably 0.1 to 20 mm and very particularly preferably 0.5 to 10 mm.
- the shield is not parallel to the anode base, e.g. in the case of a corrugated sheet used as a shield, the above-mentioned values relate to the mean distance between the shield and the anode base body.
- the effect of a shield located at this distance from the anode base body is particularly great since the additive molecules or ions first have to travel a certain distance. This is a particular advantage e.g.
- a further preferred embodiment of the present invention is an anode, in which the design of the shield in terms of its shape, the arrangement and the distance from the anode base body is such that the gas bubbles formed on the anode during operation are brought together.
- the gases which form at the anode rise in the form of small bubbles up.
- the number of bubbles increases towards the top and therefore leads to inhomogeneous shielding of the anode.
- the anode according to the invention advantageously leads to a reduction in the number of bubbles, since the bubbles are brought together and are therefore larger. Since the additive degradation is partially a gas-liquid reaction, this change in the surface to volume ratio causes a further reduction in the additive degradation.
- the removal of the shielding caused by the bubbles advantageously also leads to an increase in the deposition rate. Another advantage is that the layer of metal deposited on the cathode side becomes more homogeneous, since the inhomogeneity of the shield caused by the bubbles is reduced.
- the anode according to the invention also helps to save material.
- the gradient caused by the remaining bubbles over the height of the anode and thus also the cathode can advantageously be compensated for, for example, by the active layer of the anode base body tapering downwards, or can also be compensated for by using expanded metals with different surface factors.
- the changed ratio of surface area to volume advantageously also reduces or completely suppresses other reactions.
- the formation of Sn (IV) in Sn (II) baths or the formation of Cr (VI) in Cr (III) baths can be reduced, which has considerable advantages in operation since, for example, Sn (IV) when Sn0 2 fails and causes many problems such as masking the anodes and clogging the circulation pumps. Avoiding Cr (VI) is also desirable, since Cr (III) baths no longer work satisfactorily even at low Cr (VI) concentrations.
- the anode according to the invention advantageously enables use even in strongly alkaline solutions, since the anode in operation is caused by the above-mentioned local pH value reduction of the anode environment in the medium thus created is essentially corrosion-resistant. After the polarization has ended, such anodes must of course be removed from the bath.
- the anode described above can also be connected as a cathode.
- the shield is not self-passivating when the anode is connected cathodically. It is therefore advantageous if there is a large surface area, since this reduces the current density and thus the cathodic overvoltage. This leads to a longer operating time of the anode connected as the cathode.
- the invention further relates to methods of electroplating in which an anode as described above is used.
- a cathodic circuit of the anode ie the anode represents the cathode
- the polarity reversal can take place at different times in the electroplating process.
- a series of pulses are first applied to the circuit board to be coated which is at cathodic potential and to the anode according to the invention which is at anodic potential.
- the polarization is reversed for a few milliseconds, the circuit board then being at anodic potential, while the anode according to the invention functions as the cathode.
- the iron object is often first set to anodic potential in order to activate the surface.
- the anode according to the invention is the cathode.
- the polarization is then reversed and the anode according to the invention, which is now at anodic potential, is used in the usual way to galvanize the iron object, which is now at cathodic potential.
- the shielding of the anode lowers the current density during the polarity reversal, which is advantageous for the life of the anode.
- the invention furthermore relates to an anode for electroplating, which has a carrier material and an active layer, the active layer having two ends and the surface of the active layer from one end, which in operation is essentially at the top the other end, which is essentially below in operation, becomes smaller.
- this is an anode in which the active layer is attached directly to the carrier material.
- this is an anode in which the active layer is attached to the carrier material at a distance from it.
- the active layer is particularly preferably applied to a substrate and this substrate is fastened to the carrier material.
- the substrate can be located directly on the carrier material or can be spaced apart from the carrier material.
- An anode in which the substrate carrying the active layer is attached to the carrier material by spot welding points is very particularly preferred.
- FIG. 1 shows both the top view " (top) and a side view (bottom) of a particularly preferred embodiment of the invention.
- the anode shown has a carrier material (1) and an active layer (2) applied to a substrate is fastened thereon which is attached at a distance from the carrier material 1.
- Titanium can be used as the carrier material, titanium can also be used as the substrate and the active layer can be made of metal oxide (MOX), for example, which means that the active layer is on the carrier material that the substrate carrying the active layer is attached to the carrier material.
- MOX metal oxide
- This attachment can be achieved, for example, by screws, rivets and preferably spot welding.
- the crosses (3) therefore represent, for example, spot welding points.
- a particular advantage of the anode according to the invention is that the shielding caused by the bubbles formed on the anode during operation and the resulting inhomogeneity of the deposition on the cathode can be substantially compensated for, so that layers can be deposited on the cathode which have a more uniform thickness.
- the person skilled in the art will be able to determine which geometric arrangement is to be selected in the individual case by simple preliminary tests. '
- this anode can also be connected as a cathode.
- the invention further relates to methods of electroplating in which an anode as described above is used.
- the additive degradation was investigated under the working conditions of a sulfuric acid copper bath in DC operation.
- a sulfur compound served as an additive.
- Two direct current plates with an active layer made of mixed oxide were used as anodes. The first consisted only of the anode base body and the second anode according to the invention consisted of the anode base body and shield.
- a brass plate was used as the cathode.
- the additive consumption when using the two anodes was measured by cyclic voltametry and is plotted in FIG. 2 against the ampere hours that have flowed. It can be clearly seen that the additive degradation when using the second anode according to the invention is reduced by a factor of 2.5 to 3 compared to the additive degradation when using the first anode.
- the formation of bubbles was investigated under production conditions in a sulfuric acid copper bath for the coppering of boreholes under reverse pulse plating conditions.
- two anodes were hung side by side on the side wall of a vertical coating system.
- the first anode consisted only of an anode base body, which was composed of a carrier material made of titanium and an active layer made of mixed oxide and had a size of 1100 mm x 500 mm x 1.5 mm.
- the second anode according to the invention likewise consisted of a base body, which consisted of titanium as the carrier material and a mixed oxide as the active layer and had the same size as the base body of the first anode, and a shield made of expanded titanium metal.
- Example 3 During operation, the same current was passed through both anodes and the usual bubble formation and a bath which was strongly agitated as a result was observed in the first anode. In contrast, the formation of bubbles was greatly reduced in the second anode according to the invention.
- Example 3
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrolytic Production Of Metals (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Magnetic Heads (AREA)
Description
Claims
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10261493 | 2002-12-23 | ||
| DE10261493A DE10261493A1 (de) | 2002-12-23 | 2002-12-23 | Anode zur Galvanisierung |
| PCT/EP2003/014785 WO2004059045A2 (de) | 2002-12-23 | 2003-12-23 | Anode zur galvanisierung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1581673A2 true EP1581673A2 (de) | 2005-10-05 |
| EP1581673B1 EP1581673B1 (de) | 2011-03-23 |
Family
ID=32478077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP03813909A Expired - Lifetime EP1581673B1 (de) | 2002-12-23 | 2003-12-23 | Anode zur galvanisierung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7943032B2 (de) |
| EP (1) | EP1581673B1 (de) |
| JP (1) | JP4346551B2 (de) |
| KR (1) | KR101077000B1 (de) |
| CN (1) | CN101027432B (de) |
| AT (1) | ATE503043T1 (de) |
| AU (1) | AU2003296716A1 (de) |
| DE (2) | DE10261493A1 (de) |
| ES (1) | ES2363278T3 (de) |
| WO (1) | WO2004059045A2 (de) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5156175B2 (ja) * | 2004-10-29 | 2013-03-06 | Fdkエナジー株式会社 | ニッケル光沢メッキを施した電池 |
| EP1712660A1 (de) | 2005-04-12 | 2006-10-18 | Enthone Inc. | Unlösliche Anode |
| EP1717351A1 (de) * | 2005-04-27 | 2006-11-02 | Enthone Inc. | Galvanikbad |
| DE102005051632B4 (de) | 2005-10-28 | 2009-02-19 | Enthone Inc., West Haven | Verfahren zum Beizen von nicht leitenden Substratoberflächen und zur Metallisierung von Kunststoffoberflächen |
| WO2007056267A2 (en) * | 2005-11-04 | 2007-05-18 | The Trustees Of Columbia University In The City Of New York | Thermally actuated valves, photovoltaic cells and arrays comprising same, and methods for producing same |
| USD583779S1 (en) * | 2006-07-13 | 2008-12-30 | Ebara Corporation | Electrolytic plating anode |
| EP2009147A1 (de) * | 2007-06-20 | 2008-12-31 | METAKEM Gesellschaft für Schichtchemie der Metalle GmbH | Anodenanordnung zum Galvanisieren |
| TWI384094B (zh) * | 2008-02-01 | 2013-02-01 | Zhen Ding Technology Co Ltd | 電鍍用陽極裝置及包括該陽極裝置之電鍍裝置 |
| FR2927909B1 (fr) * | 2008-02-26 | 2010-03-26 | Serme | Cache souple pour support galvanique, support et procede de mise en oeuvre |
| EP2123799B1 (de) * | 2008-04-22 | 2015-04-22 | Rohm and Haas Electronic Materials LLC | Verfahren zum Nachfüllen von Indiumionen in Indium-Elektroplattierzusammensetzungen |
| DE202008006707U1 (de) | 2008-05-16 | 2008-08-07 | Saueressig Gmbh & Co. | Vorrichtung zum Glavanisieren von Werkstücken |
| US8236163B2 (en) * | 2009-09-18 | 2012-08-07 | United Technologies Corporation | Anode media for use in electroplating processes, and methods of cleaning thereof |
| TWI422714B (zh) * | 2010-11-24 | 2014-01-11 | Intech Electronics Co Ltd | 電鍍裝置及其電鍍槽中的電極板結構 |
| CN102477576A (zh) * | 2010-11-30 | 2012-05-30 | 加贺开发科技有限公司 | 电镀装置及其电镀槽中的电极板结构 |
| CN103820839A (zh) * | 2014-01-14 | 2014-05-28 | 杭州三耐环保科技有限公司 | 一种高效抑制电积酸雾的阴阳极板结构及其实现方法 |
| CN104073862A (zh) * | 2014-07-11 | 2014-10-01 | 张钰 | 一种用于碱性锌镍合金电镀的不溶性阳极装置 |
| US10428439B2 (en) * | 2015-11-16 | 2019-10-01 | Intel Corporation | Predictive capability for electroplating shield design |
| CA3127517A1 (en) | 2019-01-24 | 2020-07-30 | Atotech Deutschland Gmbh | Membrane anode system for electrolytic zinc-nickel alloy deposition |
| CN110029381B (zh) * | 2019-04-25 | 2020-12-15 | 首钢集团有限公司 | 一种高镀锡量镀锡板的生产方法 |
| US12209323B2 (en) | 2020-12-08 | 2025-01-28 | Honeywell International Inc. | Electroplating shield device and methods of fabricating the same |
| US20240060202A1 (en) * | 2020-12-31 | 2024-02-22 | Tao Ye | Optimized method and device for insoluble anode acid sulfate copper electroplating process |
| CN113106527B (zh) * | 2021-04-19 | 2024-09-10 | 深圳铱创科技有限公司 | 不溶性阳极及脉冲电镀设备 |
| MX2024006424A (es) * | 2021-12-02 | 2024-06-11 | Dipsol Chem | Metodo y sistema para electrochapar partes con metal. |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5213300Y2 (de) * | 1971-02-01 | 1977-03-25 | ||
| US3875041A (en) * | 1974-02-25 | 1975-04-01 | Kennecott Copper Corp | Apparatus for the electrolytic recovery of metal employing improved electrolyte convection |
| US4075069A (en) * | 1975-04-10 | 1978-02-21 | Mitsui Mining & Smelting Co., Ltd. | Processes for preventing the generation of a mist of electrolyte and for recovering generated gases in electrowinning metal recovery, and electrodes for use in said processes |
| JPS59226189A (ja) * | 1983-06-06 | 1984-12-19 | Nippon Steel Corp | 鉄系電気メツキにおけるメツキ液の通電酸化抑制方法 |
| GB8327300D0 (en) * | 1983-10-12 | 1983-11-16 | Deso Inc | Acid mist reduction |
| JP2722259B2 (ja) * | 1989-09-14 | 1998-03-04 | ペルメレック電極株式会社 | 電極保護体 |
| JPH0452296A (ja) * | 1990-06-20 | 1992-02-20 | Permelec Electrode Ltd | 銅めっき方法 |
| JPH08376Y2 (ja) * | 1990-08-15 | 1996-01-10 | 株式会社アルメックス | 不溶解性陽極を用いたメッキ装置 |
| JPH086198B2 (ja) * | 1990-08-15 | 1996-01-24 | 株式会社アルメックス | 水平搬送型メッキ装置 |
| JP3468545B2 (ja) * | 1993-04-30 | 2003-11-17 | ペルメレック電極株式会社 | 電解用電極 |
| JPH07316861A (ja) * | 1994-05-24 | 1995-12-05 | Permelec Electrode Ltd | 電極構造体 |
| JP3188361B2 (ja) * | 1994-06-27 | 2001-07-16 | ペルメレック電極株式会社 | クロムめっき方法 |
| DE19545231A1 (de) | 1995-11-21 | 1997-05-22 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Metallschichten |
| CN1222641C (zh) * | 1998-02-12 | 2005-10-12 | Acm研究公司 | 电镀设备及方法 |
| DE19834353C2 (de) * | 1998-07-30 | 2000-08-17 | Hillebrand Walter Gmbh & Co Kg | Alkalisches Zink-Nickelbad |
| DE19845506A1 (de) * | 1998-10-02 | 2000-04-06 | Wieland Edelmetalle | Verfahren zur Herstellung von prothetischen Formteilen für den Dentalbereich und prothetisches Formteil |
| US6120658A (en) * | 1999-04-23 | 2000-09-19 | Hatch Africa (Pty) Limited | Electrode cover for preventing the generation of electrolyte mist |
| US6254742B1 (en) * | 1999-07-12 | 2001-07-03 | Semitool, Inc. | Diffuser with spiral opening pattern for an electroplating reactor vessel |
| US6156169A (en) * | 1999-10-06 | 2000-12-05 | Jyu Lenq Enterprises Co., Ltd. | Electroplating anode titanium basket |
| US6755960B1 (en) * | 2000-06-15 | 2004-06-29 | Taskem Inc. | Zinc-nickel electroplating |
| ES2250166T5 (es) | 2000-06-15 | 2016-05-20 | Coventya Inc | Electrochapado de zinc-níquel |
| US6425991B1 (en) * | 2000-10-02 | 2002-07-30 | Advanced Micro Devices, Inc. | Plating system with secondary ring anode for a semiconductor wafer |
| US6402909B1 (en) * | 2000-10-02 | 2002-06-11 | Advanced Micro Devices, Inc. | Plating system with shielded secondary anode for semiconductor manufacturing |
| US6391170B1 (en) * | 2000-12-01 | 2002-05-21 | Envirotech Pumpsystems, Inc. | Anode box for electrometallurgical processes |
| US6852209B2 (en) * | 2002-10-02 | 2005-02-08 | Applied Materials, Inc. | Insoluble electrode for electrochemical operations on substrates |
-
2002
- 2002-12-23 DE DE10261493A patent/DE10261493A1/de not_active Withdrawn
-
2003
- 2003-12-23 AU AU2003296716A patent/AU2003296716A1/en not_active Abandoned
- 2003-12-23 EP EP03813909A patent/EP1581673B1/de not_active Expired - Lifetime
- 2003-12-23 KR KR1020057011715A patent/KR101077000B1/ko not_active Expired - Fee Related
- 2003-12-23 ES ES03813909T patent/ES2363278T3/es not_active Expired - Lifetime
- 2003-12-23 DE DE50313572T patent/DE50313572D1/de not_active Expired - Lifetime
- 2003-12-23 AT AT03813909T patent/ATE503043T1/de active
- 2003-12-23 WO PCT/EP2003/014785 patent/WO2004059045A2/de not_active Ceased
- 2003-12-23 JP JP2004563184A patent/JP4346551B2/ja not_active Expired - Fee Related
- 2003-12-23 US US10/540,232 patent/US7943032B2/en active Active
- 2003-12-23 CN CN2003801072596A patent/CN101027432B/zh not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
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| See references of WO2004059045A2 * |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003296716A1 (en) | 2004-07-22 |
| EP1581673B1 (de) | 2011-03-23 |
| JP4346551B2 (ja) | 2009-10-21 |
| WO2004059045A2 (de) | 2004-07-15 |
| JP2006511712A (ja) | 2006-04-06 |
| US20060124454A1 (en) | 2006-06-15 |
| KR20050085863A (ko) | 2005-08-29 |
| CN101027432B (zh) | 2010-09-29 |
| WO2004059045A3 (de) | 2005-02-24 |
| DE10261493A1 (de) | 2004-07-08 |
| ATE503043T1 (de) | 2011-04-15 |
| US7943032B2 (en) | 2011-05-17 |
| AU2003296716A8 (en) | 2004-07-22 |
| DE50313572D1 (de) | 2011-05-05 |
| ES2363278T3 (es) | 2011-07-28 |
| KR101077000B1 (ko) | 2011-10-26 |
| CN101027432A (zh) | 2007-08-29 |
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