Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Definitions

• the invention relates to a recording system comprising a recording medium comprising a memory layer capable of storing information and a device for reading and / or writing information comprising a network of microdots arranged in a common plane opposite the memory layer, the recording medium comprising at least a first electrode and the reading and / or writing device comprising at least a second electrode, the first electrode being arranged facing the second electrode, the system comprising control means the distance separating the recording medium from the reading and / or writing device by applying a potential difference between the first and second electrodes.
• microtips In the field of ultra high density data recording by microtips, the information is written and read by means of microtips on memory areas of nanometric size, for example of 20 ⁇ 20 nm 2 .
• a network of micro-tips is used in contact or quasi-contact with the surface of the media to locally modify the properties.
• the difference between two tips is for example of the order of 100 micrometers.
• the contact forces must be very low, of the order of nano-Newton, so as not to damage either the micro-tips or the surface of the medium, which is difficult to control.
• the system generally includes an actuator for the relative lateral movement of the media with respect to the micro-tips, allowing the micro-tips to access the different memory areas.
• the Millipede ® technique from IBM (“The Millipede - More than one thousand tips for future AFM data storage" by P. Vettiger et al. In IBM J. Res. Develop., Vol. 44, No. 3, May 2000 ) describes micro-tips arranged on a network of cantilevers making it possible to press the micro-tips with a pressing force linked to the bending of the cantilevers. This force then depends on the height of a micro-tip, cantilever included, which can vary from one micro-tip to another. The average value of the support force is related to the distance between the cantilever network and the media. In the event of temperature drift, the force cannot be adapted or controlled.
• the document WO96 / 1 1472 describes a memory device comprising a memory substrate comprising a memory medium formed on its surface.
• the memory device includes a probe device having a plurality of probes having conductive needles and probe drive circuits.
• the circuits are formed, by a monolithic semiconductor type process, near the probes on the device for probing.
• the device for probing is divided into cells each comprising a needle and one of the drive circuits.
• the needles are arranged in a common plane opposite the memory substrate.
• Each cell of the device for probing may include auxiliary electrodes, for example having fins parallel to the substrate.
• the auxiliary electrodes are arranged opposite the substrate.
• the substrate has an electrode formed on a face opposite the opposite face of the probe device.
• An electrostatic attraction force is established between the auxiliary electrodes and the formed electrode on the substrate, via the probe drive circuits.
• the probes are thus controlled by applying an appropriate voltage between the auxiliary electrodes and the electrode of the substrate.
• the object of the invention is to remedy these drawbacks and, in particular, to avoid damage to the micro-tips and / or the recording medium.
• the reading and / or writing device comprises contact elements disposed between the reading and / or writing device and the support for recording and cooperating with the memory layer so as to dampen the contact between the microdots and the memory layer.
• FIG. 1 represents, in section, a particular embodiment of a recording system according to the invention.
• Figures 2 and 3 show, respectively in section and along the axis AA, another particular embodiment of a recording system according to the invention.
• FIG. 4 illustrates a particular embodiment of a recording system according to the invention comprising selective means of control by slaving.
• FIG. 5 represents, in section, a particular embodiment of a recording system according to the invention.
• FIG. 6 represents a particular embodiment of another variant of a recording system according to the invention.
• a recording system comprises a recording medium 1 comprising a memory layer 2 capable of storing information.
• the memory layer 2 can be rigid or flexible and deformable.
• the recording system further comprises a device 4 for reading and / or writing information comprising a network of microtips 5 (5a, 5b, 5c) arranged in a common plane facing the memory layer 2.
• the microdots 5 can be any kind of microdots, for example microdots comprising cantilevers, capable of allowing reading and / or writing of information, by field effect, by thermal effect, etc.
• the recording medium 1 comprises a first electrode 6 and the device 4 for reading and / or writing comprises a second electrode 7.
• the first electrode 6 is arranged opposite the second electrode 7.
• the system comprises a control device C, for example a control circuit, of the distance d separating the recording medium 1 from the device 4 for reading and / or writing by applying a potential difference Vd between the first 6 and second 7 electrodes.
• the first electrode 6 is constituted by a conductive layer arranged on a rear face 8 of the memory layer 2 opposite to a front face 9, arranged opposite the microtips 5.
• the second electrode 7 can also be constituted by a conductive layer, incorporated in a support 10 of the network of microtips 5, possibly so that the second electrode 7 is flush with the surface on which the microtips 5 are arranged.
• the application of the potential difference Vd between the first 6 and second 7 electrodes creates a force between the recording medium 1 and the device 4 for reading and / or writing.
• the force per unit area is of the order of 50 nano-Newton per 100 ⁇ m 2 for a potential difference Vd of 1V and for a typical deviation of 100 nm between the microtips 5 and the memory layer 2.
• the force can be increased by increasing the applied voltage.
• the recording medium 1 can comprise a plurality of first electrodes 6 (6a, 6b, 6c) constituted by a plurality of conductive pads arranged on a rear face 8 of the memory layer 2 opposite the face front 9 disposed opposite the micro-tips 5.
• the device 4 for reading and / or writing comprises a plurality of second electrodes 7 constituted by conductive pads buried in the support 10 of the network of micro-tips 5.
• the first electrodes 6 are respectively arranged opposite the second electrodes 7.
• the system preferably comprises a single first electrode 6 and a plurality of second electrodes 7.
• An average pressing force can be defined by a single value of the potential difference Vd, by applying the same first potential to all the first electrodes 6 and the same second potential to all the second electrodes 7.
• the forces support can also be controlled locally by applying specific potentials to the different electrodes 6 and 7, to control, for example, the deformation of the memory layer 2 and compensate, by a deformation of the memory layer 2, for a dispersion of the heights of the micro-tips 5, in particular by slaving the potential differences to a measurement quantity representative of the difference between the micro-tips 5 and the memory layer 2, such as for example an electric current passing through a micro-tip as described below. below.
• the difference between the micro-tips 5 and the memory layer 2 can also be determined by detecting the temperature of the micro-tips during the writing and reading phases.
• the device 4 for reading and / or writing comprises contact elements arranged between the device 4 for reading and / or writing and the recording medium 1.
• the contact elements are preferably fixed on the support 10 of the micro-tip array 5.
• the contact elements cooperate with the memory layer 2 so as to dampen the contact between the micro-tips 5 and the memory layer 2. This makes it possible to introduce restoring forces between the recording medium 1 and the device 4 for reading and / or writing, in order to separate the memory layer 2 from the microtips 5, whether during system rest phases or during read or write operation.
• the height of the contact elements (11, 12, 17, 18, 19; described below) is preferably between 100 nanometers and 200 nanometers.
• the device 4 for reading and / or writing comprises contact elements made of elastic flexible material, that is to say that is to say deformable and able to return to their initial shapes, intended to absorb the contact between the microtips 5 and the memory layer 2.
• the recording medium 1 is rigid and has, for example, a thickness of around 5 micrometers.
• the elastic flexible material can be an elastomer, for example Polydimethylsiloxane (PDMS), based on benzocyclobutene (BCB) or methacrylate, or an elastic composite material comprising a rigid material and a deformable elastic material.
• PDMS Polydimethylsiloxane
• BCB benzocyclobutene
• methacrylate or an elastic composite material comprising a rigid material and a deformable elastic material.
• an element made of elastic flexible material may comprise a flexible layer surrounding a hard core or a hard layer covering a flexible core. The spacing between the micro-tips 5, in the plane of the micro-tips
• the elements of flexible elastic material may, for example, be constituted by micro-balls 11 randomly distributed in the plane of the micro-tips.
• the micro-balls 11 are arranged on the support 10 of the network of micro-tips 5.
• the micro-balls have a diameter slightly greater than the height of the micro-tips 5 and the desired distance between the memory layer 2 and the support 10, for example a diameter of 150 nm for a distance of 100 nm between the memory layer 2 and the support 10.
• the micro-balls 11 are distributed with an average surface density such that, on average, several micro-balls 11 are arranged around a micro-tip 5.
• the micro-beads for example latex beads, can be distributed in liquid solution which can be completely or partially evaporated.
• the elements of flexible elastic material may, for example, be constituted by studs 12 arranged in staggered with respect to the micro-tips 5, in the plane of the micro-tips 5.
• the studs 12 of flexible elastic material preferably have a frustoconical shape, the top surface 13 of which is substantially greater than the surface 14 of the micro-tips intended coming into contact with the memory layer 2.
• the pads 12 preferably have a height greater than the height of the micro-tips and can be connected to the electrical ground.
• the pads 12 and the microtips 5 are preferably produced in the same manufacturing step, for example by deposition of tungsten followed by planarization, for example mechanical polishing.
• the studs 12 are wider than the microtips 5 and the microtips 5 are etched so as to obtain a pointed conical shape which automatically reduces, in a controlled manner, the height of the microtips 5.
• the recording system may include detectors 15 (15a, 15b) measuring currents I (la and Ib) traversing the micro-tips 5a and 5b respectively. and the part of the associated memory layer 2, as shown in FIG. 4.
• STM scanning tunneling microscope
• the distance between a microtip 5 and the memory layer 2 can be controlled according to a measured tunnel current.
• the current flowing from a micro-tip 5 to the memory layer 2 strongly depends on the distance between the micro-tip 5 and the memory layer 2.
• a control device 16a (16b) by servo-control makes it possible to control the potential difference Vda (Vdb) between the first 6a (6b) and second 7a (7b) electrodes by current control la (Ib).
• Vda potential difference between the first 6a (6b) and second 7a (7b) electrodes
• Ib current control la
• the servo control device 16 can comprise a circuit, for example of the proportional, integral and derivative (PID) type, which regulates the distance d on a sliding average value, for example, in order to allow rapid variations of the current I to be detected.
• PID proportional, integral and derivative
• the stiffness of the servo-control is associated with the flexibility of the memory layer 2, the amplitude of the restoring forces, the amplitude of the electrostatic force due to the potential difference Vd and the adjustment of the PID circuit.
• the control device 16 by servo-control can comprise circuits associated with the micro-tips 5 and disposed respectively under the micro-tips 5.
• the system comprises two second electrodes 7a and 7b, associated respectively with the first electrodes 6a and 6b.
• the control devices 16 by slaving of the potential differences Vd are selective, that is to say they make it possible to control the potential differences Vda and Vdb independently according to the currents la and Ib which are measured independently.
• the system may include a plurality of second electrodes 7, associated respectively with a plurality of first electrodes 6 and a plurality of servo control devices 16.
• the number of micro-tips 5 is not necessarily identical to the number of first 6 and / or second 7 electrodes.
• the system may include a single servo control device 16, making it possible to control the potential difference Vd between the first 6 and the second electrode 7 by servo control I, measured via a plurality of detectors 15.
• a second electrode 7 can be associated with several first electrodes 6 or vice versa.
• the second electrodes 7 are constituted by the microtips 5 which is, for example, an advantageous solution, when the principle of writing and / or reading does not require contact intimate between the memory layer and the micro-tips and / or when the memory layer 2 is, on the surface, made of a non-conductive material.
• the elements made of elastic flexible material consist of a layer 17 of elastic flexible material arranged around the micro-tips, so that the micro-tips 5 protrude from the layer 17 of elastic flexible material.
• Second micro-balls 18, hard or flexible are arranged on the layer 17.
• all of the second micro-balls 18 and of the layer 17 make it possible to absorb the contact between the micro-tips 5 and the memory layer 2.
• the different kinds of elements of flexible elastic material for example the studs 12 and the layer 17 of flexible elastic material, can be combined, for example by structuring a layer of flexible elastic material, so as to obtain a layer having protrusions.
• the contact elements of the device 4 for reading and / or writing are constituted by elements rigid 19 and the memory layer 2 is made of a flexible elastic material.
• the memory layer 2 deforms under the pressure exerted by the rigid elements 19, which creates a repulsion between the memory layer 2 and the device 4 for reading and / or writing.
• the memory layer essentially cooperating with the rigid elements 19, the contact between the micro-tips 5 and the memory layer 2 is absorbed.
• the recording medium 1 comprising the memory layer 2 is, for example, made of silicon and has a thickness of between 0.3 micrometer and 1 micrometer, preferably 0.5 micrometer. In this case, the memory layer 2 can, for example, be fixed on a frame.
• the rigid elements 19 are, for example, metallic and preferably made of tungsten W.
• the deformation of the memory layer 2 in the direction of the applied force is of the order of 10 nanometers.
• the surfaces of the electrodes 6 and 7 are 50 ⁇ 50 ⁇ m 2 and the applied voltage is between 3 and 5V, which makes it possible to obtain an appropriate deformation of the memory layer 2. It is not always favorable to reduce the gap between the rigid elements 19 because this results in an excessive increase in the stiffness force, that is to say the repulsion force.
• the distance between the rigid elements 19 or the distance between the microtips 5 is preferably 100 micrometers.
• the electrostatic force and the repelling force must be close.
• the first electrodes can be buried in the memory layer 2, arranged on the front face of the memory layer 2 or formed by it.
• the second electrodes can be buried in the support 10 or be arranged on the front or rear face of the latter.
• the electrodes can have any shape, for example round, square, rectangular, hexagonal or annular to be arranged around the microtips.
• the shape of the electrodes can be optimized to serve as a screen for electric fields created by addressing circuits and interacting with the memory layer 2.
• the electrodes can be produced by any conventional process, for example by depositing and etching a metal , for example copper, aluminum, tungsten or a nitride or a tungsten oxide.

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• 2004
  • 2004-04-15 FR FR0403921A patent/FR2869027B1/fr not_active Expired - Fee Related
• 2005
  • 2005-04-07 EP EP05753714A patent/EP1735788A2/de not_active Withdrawn
  • 2005-04-07 WO PCT/FR2005/000847 patent/WO2005102908A2/fr not_active Ceased
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