EP1787330A4 - Fabrication de films ultra-minces de nitrure d'indium et de gallium, d'heterostructures et d'autres pieces par deposition en phase vapeur d'organometallique - Google Patents

Fabrication de films ultra-minces de nitrure d'indium et de gallium, d'heterostructures et d'autres pieces par deposition en phase vapeur d'organometallique

Info

Publication number
EP1787330A4
EP1787330A4 EP05746303A EP05746303A EP1787330A4 EP 1787330 A4 EP1787330 A4 EP 1787330A4 EP 05746303 A EP05746303 A EP 05746303A EP 05746303 A EP05746303 A EP 05746303A EP 1787330 A4 EP1787330 A4 EP 1787330A4
Authority
EP
European Patent Office
Prior art keywords
heterostructures
indium
ultra
manufacture
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05746303A
Other languages
German (de)
English (en)
Other versions
EP1787330A2 (fr
Inventor
Arpan Chakraborty
Benjamin A Haskell
Stacia Keller
James S Speck
Steven P Denbaars
Shuji Nakamura
Umesh K Mishra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California Berkeley
University of California San Diego UCSD
Original Assignee
University of California Berkeley
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California Berkeley, University of California San Diego UCSD filed Critical University of California Berkeley
Publication of EP1787330A2 publication Critical patent/EP1787330A2/fr
Publication of EP1787330A4 publication Critical patent/EP1787330A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
EP05746303A 2004-05-10 2005-05-06 Fabrication de films ultra-minces de nitrure d'indium et de gallium, d'heterostructures et d'autres pieces par deposition en phase vapeur d'organometallique Withdrawn EP1787330A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56974904P 2004-05-10 2004-05-10
PCT/US2005/015774 WO2005112123A2 (fr) 2004-05-10 2005-05-06 Fabrication de films ultra-minces de nitrure d'indium et de gallium, d'heterostructures et d'autres pieces par deposition en phase vapeur d'organometallique

Publications (2)

Publication Number Publication Date
EP1787330A2 EP1787330A2 (fr) 2007-05-23
EP1787330A4 true EP1787330A4 (fr) 2011-04-13

Family

ID=35394819

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05746303A Withdrawn EP1787330A4 (fr) 2004-05-10 2005-05-06 Fabrication de films ultra-minces de nitrure d'indium et de gallium, d'heterostructures et d'autres pieces par deposition en phase vapeur d'organometallique

Country Status (4)

Country Link
EP (1) EP1787330A4 (fr)
JP (2) JP5379973B2 (fr)
KR (2) KR101365604B1 (fr)
WO (1) WO2005112123A2 (fr)

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US7504274B2 (en) 2004-05-10 2009-03-17 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
EP1787330A4 (fr) * 2004-05-10 2011-04-13 Univ California Fabrication de films ultra-minces de nitrure d'indium et de gallium, d'heterostructures et d'autres pieces par deposition en phase vapeur d'organometallique
JPWO2006088261A1 (ja) * 2005-02-21 2008-07-17 財団法人神奈川科学技術アカデミー ＩｎＧａＮ層生成方法及び半導体素子
JP4807081B2 (ja) * 2006-01-16 2011-11-02 ソニー株式会社 ＧａＮ系化合物半導体から成る下地層の形成方法、並びに、ＧａＮ系半導体発光素子の製造方法
US8193079B2 (en) 2006-02-10 2012-06-05 The Regents Of The University Of California Method for conductivity control of (Al,In,Ga,B)N
JP2008053640A (ja) * 2006-08-28 2008-03-06 Kanagawa Acad Of Sci & Technol Ｉｉｉ−ｖ族窒化物層およびその製造方法
JP5077985B2 (ja) * 2006-08-28 2012-11-21 シャープ株式会社 窒化物半導体層の形成方法
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JP2008159606A (ja) * 2006-12-20 2008-07-10 Rohm Co Ltd 窒化物半導体発光素子およびその製造方法
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KR100889956B1 (ko) 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
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JP5003527B2 (ja) * 2008-02-22 2012-08-15 住友電気工業株式会社 Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法
JP2011517099A (ja) * 2008-04-04 2011-05-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア プレーナー半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎベースの発光ダイオード向けＭＯＣＶＤ成長技術
JP2013502728A (ja) * 2009-08-21 2013-01-24 ソラア インコーポレーテッド デバイスのためのガリウム及び窒素含有超薄型エピタキシャル構造のための高速成長方法及び構造
JP2011049488A (ja) * 2009-08-28 2011-03-10 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
WO2011058697A1 (fr) * 2009-11-12 2011-05-19 パナソニック株式会社 Procédé de fabrication d'un élément semi-conducteur à base de nitrure
JP2011146651A (ja) * 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物発光ダイオード
JP5113305B2 (ja) * 2011-01-21 2013-01-09 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子および当該発光素子を備える光源
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US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
KR20130066870A (ko) 2011-12-13 2013-06-21 삼성전자주식회사 반도체 발광소자
US8866149B2 (en) 2012-02-17 2014-10-21 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates
US9136673B2 (en) 2012-07-20 2015-09-15 The Regents Of The University Of California Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
KR101954145B1 (ko) * 2012-08-29 2019-03-05 엘지전자 주식회사 무분극 이종 기판 및 그 제조방법, 이를 이용한 질화물계 발광 소자
JP5682716B2 (ja) * 2014-01-09 2015-03-11 三菱化学株式会社 窒化物半導体
JP6426359B2 (ja) * 2014-03-24 2018-11-21 株式会社東芝 半導体発光素子及びその製造方法
DE102014113068A1 (de) * 2014-09-10 2016-03-10 Seaborough Ip I B.V. Lichtemittierende Vorrichtung
FR3076080B1 (fr) * 2017-12-27 2019-11-29 Aledia Pseudo-substrat pour dispositif optoelectronique et son procede de fabrication
KR20220140749A (ko) 2020-01-22 2022-10-18 포로 테크놀로지스 리미티드 적색 led 및 제작 방법
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TWI905241B (zh) 2020-08-04 2025-11-21 英商普羅科技有限公司 Ｌｅｄ及製造方法

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JP5379973B2 (ja) 2013-12-25
KR20070013320A (ko) 2007-01-30
JP2007537600A (ja) 2007-12-20
KR101365604B1 (ko) 2014-02-20
WO2005112123A2 (fr) 2005-11-24
WO2005112123A3 (fr) 2006-12-28
KR20120008539A (ko) 2012-01-30
EP1787330A2 (fr) 2007-05-23
JP2012209582A (ja) 2012-10-25

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