EP2008497A1 - Procede de fabrication d'un composant micromecanique - Google Patents

Procede de fabrication d'un composant micromecanique

Info

Publication number
EP2008497A1
EP2008497A1 EP07727181A EP07727181A EP2008497A1 EP 2008497 A1 EP2008497 A1 EP 2008497A1 EP 07727181 A EP07727181 A EP 07727181A EP 07727181 A EP07727181 A EP 07727181A EP 2008497 A1 EP2008497 A1 EP 2008497A1
Authority
EP
European Patent Office
Prior art keywords
plate
substrate
membrane
cavity
cavern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07727181A
Other languages
German (de)
English (en)
Inventor
Heribert Weber
Christoph Schelling
Stefan Weiss
Nicolaus Ulbrich
Roman Schlosser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2008497A1 publication Critical patent/EP2008497A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2410/00—Microphones

Definitions

  • the invention relates to a method for producing a micromechanical component with a membrane, with a fixed plate having at least one through-opening, and with a cavity which is formed between the membrane and the plate.
  • the membrane of this device is realized in a layer structure over a substrate.
  • the plate is structured out of the substrate. For this purpose, starting from the back of the component, a cavern is produced in the substrate.
  • Micromechanics opens up the possibility of producing microphones with the smallest dimensions. These devices include a diaphragm whose deflections are detected under sound and converted into electrical signals.
  • European Patent Application EP 1 441 561 A2 describes how a plate with passage openings can be produced under an acoustically active membrane which is formed in a lattice-like or net-like manner with passage openings. This plate serves as a counter electrode, with the aid of which the deflections of the membrane can be detected capacitively.
  • the membrane can be ventilated via the passage openings in the plate and a cavity in the back of the component from below / behind.
  • a cavern in the Created back side of the substrate so as to expose the back of the plate.
  • the top of the membrane is exposed in the layer structure above the substrate.
  • the passage openings in the membrane are already being produced.
  • the thus structured membrane is then masked to create passage openings in the plate. Namely, the substrate material in the region of these passage openings is removed in an anisotropic etching attack, which proceeds from the top side of the component via the passage openings of the membrane.
  • a cavity is created under the membrane, exposing the top of the plate. This is done in an isotropic etching step, in which the etching attack also takes place from the top side of the component via the passage openings of the membrane.
  • the back side of the substrate is provided with a first masking layer, which is structured in accordance with the arrangement and geometry of the cavern to be produced.
  • a second masking layer is applied over this first structured masking layer, which is patterned only in the region of the cavern to be generated, specifically in accordance with the arrangement and geometry of the passage openings in the plate, the back side of which is to be exposed during the creation of the cavern.
  • the so masked back of the substrate is now exposed to an anisotropic etching attack. It will be first Substrate material is removed only in the area of the passage openings to be produced until the second masking layer has been completely etched away.
  • substrate material in the remaining area of the cavern to be produced is weggeatzt until the back of the plate has been exposed.
  • the upper side of the membrane is exposed in an anisotropic etching step, the passage openings in the membrane also being produced.
  • About these fürgangso réelleen in the membrane is then removed with the aid of an isotropically acting etching medium, the substrate material under the membrane. In this case, the top of the plate is exposed and the already structured in the plate fürgangso réelleen be connected to the resulting membrane under the cavity.
  • the cavern and the passage openings in the plate are produced in a common anisotropic etching step, the etching attack starting from the back side of the component.
  • the required masking of the substrate printing side is relatively expensive, since with the two masking different mask shapes must be realized, which must be aligned very closely to each other.
  • the two masking layers must each have a defined thickness, since the topography of the recess produced in this etching attack-both in the area of the passage openings and in the remaining area of the cavern-depends solely on the thickness of the masking layers and the duration of the etching attack.
  • irregularities often occur in the edge regions of the etched recesses during prolonged etching attacks, so that the second method variant is problematic in practice.
  • the present invention proposes a process variant in which the structuring of the passage openings in the plate is independent of any possible
  • At least the bottom of the cavern forming the rear side of the plate is provided with at least one masking layer, which is structured to produce the at least one passage opening, and then removes the substrate material in the region of the passage opening from the back of the plate becomes.
  • the fürgangso réelleen in the plate according to the invention thus generated from the back of the device, taking advantage of the fact that this back-side structuring is independent of the realization of the membrane.
  • the cavern does not necessarily have to be generated in an anisotropic etching step. Rather, an isotropic etching process is also suitable for the first etching step.
  • the inventive method can be well integrated into different manufacturing processes.
  • the inventively proposed equalization of the back side structuring also opens up a greater freedom in the arrangement, dimensioning and geometry of fürgangso réelleen in the plate.
  • the back side of the component structured in the first etching step must be masked. Since the cavern usually extends over a considerable part of the thickness of the substrate, the masking layer must therefore be applied to a topography with relatively large level differences. In this context, it proves to be particularly advantageous one
  • photoresist layer as a masking layer, as by
  • the photoresist layer thus produced is first exposed at least in the bottom region of the cavern, for which purpose advantageously a projection exposure apparatus can be used.
  • a projection exposure apparatus for which purpose advantageously a projection exposure apparatus can be used.
  • subsequent development is particularly suitable for a Spruhillessvon, because so the development medium can be well introduced into the cavern.
  • the substrate material in the region of the passage openings can be removed both in an anisotropic etching step, such as by trenches, and in an isotropic etching step, as long as the substrate material is removed Atzangriff takes place starting from the uncovered back of the plate.
  • the top of the plate is advantageously exposed in an isotropic etching step in which substrate material above the plate is removed.
  • the cavity between the plate and the membrane is also generated. If the etching attack in the context of Vorderacted combintechnik from the top of the device takes place via corresponding openings in the membrane, the cavity can also be created before structuring the fürgangso réelleen in the plate. In this case, the fürgangso réelleen then need not be separately protected against attack of the isotropic etching medium and consequent widening. Alternatively, the etching attack can also take place from the rear side of the component, via the passage openings in the plate.
  • FIGS. 1a to if show a micromechanical component in the individual stages of the production process according to the invention.
  • FIGS. 2 a to 2 c show a variant according to the invention of the method illustrated in FIGS. 1 a to 1 b.
  • CMOS wafer 10 which is to be structured by means of the inventive method.
  • the CMOS wafer 10 comprises a silicon substrate 1 on which there is a layer structure 2 consisting of a plurality of metallic and dielectric layers which, with the exception of the lattice-like metal layer 3, are not to be discussed here. Between the metal layer 3 and the substrate 1 is a dielectric layer 4, through which the metal layer 3 is electrically insulated from the substrate 1.
  • FIG. 1b shows the CMOS wafer 10 after the reverse side has been provided with a lacquer and / or oxide mask 5 for carrying out a deep trench.
  • a cavity 6 is produced in the rear side of the substrate 1, which extends over only a part of the thickness of the substrate 1.
  • the bottom of the cavity 6 thus forms the back side of a plate 7, which is to be structured out of the substrate 1 in the context of the inventive method.
  • the back side of the substrate 1 is provided with a photoresist layer 8, which also extends over the bottom and the side wall of the cavity 6.
  • a Spruhbelackungs vide is used, since so let a relatively gleichclerosisige coverage also in the bottom area of the cavity 6 let achieve.
  • the photoresist layer 8 is patterned in the bottom region of the cavity 6 in order to produce passage openings 9 in the plate 7 in a subsequent anisotropic etching step starting from the back side of the substrate 1.
  • the photoresist layer 8 is first exposed.
  • the photoresist layer 8 is developed, advantageously a Spruhentwickler is used, since such developers can attack in the depth of the cavity 6.
  • FIG. 1 d shows the CMOS wafer 10 after the structure of the photoresist layer 8 has been transferred to the plate 7 and the substrate material has been removed in the area of the passage openings 9 with a trench from the rear side of the plate 7. In addition, the photoresist layer was removed from the wall of the cavity 6.
  • FIG. 1C shows the CMOS wafer 10 after this isotropic etching attack, which can take place both from above, via the passage openings 13 in the lattice structure of the membrane 11, and also from the substrate pressure side via the cavity 6 and the passage openings 9.
  • FIGS. 1a to if A variant of the method illustrated in FIGS. 1a to if will be explained below with reference to FIGS. 2a to 2c.
  • This method variant is based on a CMOS wafer 20, as shown in Fig. Ia.
  • the substrate printing side is masked first in order to produce a cavity 6 in the rear side of the substrate 1 and thus to expose the rear side of a plate 7.
  • the substrate material in the region of the cavity 6 can be removed both in an anisotropic and in an isotropic etching process.
  • the now already structured rear side of the substrate 1 is masked again, in particular in the bottom region of the cavity 6, where passage openings 9 in the plate 7 are to be produced.
  • FIG. 2a shows the CMOS wafer 20 after this process step.
  • FIG. 2a illustrates that in addition to the fürgangso réelleen 9 and a cavity 12 above the plate 7 and a freely movable membrane 21 has formed in the layer structure 2. Accordingly, the device shown in Fig. 2a could be used after this process step, for example, as absolute pressure or relative pressure sensor.
  • FIG. 2b shows a detailed view of the CMOS wafer 20 after a pressure compensation opening 22 has been produced in the membrane 21.
  • the component shown here can be used for example as a microphone.
  • Fig. 2c substantially corresponds to Fig. If and shows the CMOS wafer 20 shown in Fig. 2a, after the top of the membrane 21 has been exposed.
  • the dielectric layers were removed above the membrane 21 in a dry etching process proceeding from the upper side of the component.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

L'invention propose un procédé de fabrication d'un composant micromécanique selon lequel le composant (10) doit présenter une membrane (11), une plaque fixe (7) dotée d'au moins une ouverture de passage (9) et un espace creux (12) entre la membrane (11) et la plaque (7). La membrane (11) est réalisée en établissant des couches (2) sur un substrat (1) et la plaque (7) est structurée à partir du substrat (1). Partant du côté arrière du composant (10), on forme une caverne (6) dans le substrat (1). Le procédé selon l'invention est simple à réaliser et permet une structuration précise des ouvertures de passage (9) dans la plaque (7) indépendamment d'éventuelles ouvertures de passage dans la membrane (11). Dans ce but, au moins le fond de la caverne (6) qui forme le côté arrière de la plaque (7) est doté d'au moins une couche de masquage (8) qui est structurée pour former ladite ou lesdites ouvertures de passage (9). Le matériau du substrat est alors enlevé de la zone de l'ouverture de passage (9) en partant du côté arrière de la plaque (7).
EP07727181A 2006-04-10 2007-03-21 Procede de fabrication d'un composant micromecanique Withdrawn EP2008497A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200610016811 DE102006016811A1 (de) 2006-04-10 2006-04-10 Verfahren zur Herstellung eines mikromechanischen Bauelements
PCT/EP2007/052705 WO2007115914A1 (fr) 2006-04-10 2007-03-21 Procede de fabrication d'un composant micromecanique

Publications (1)

Publication Number Publication Date
EP2008497A1 true EP2008497A1 (fr) 2008-12-31

Family

ID=38336843

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07727181A Withdrawn EP2008497A1 (fr) 2006-04-10 2007-03-21 Procede de fabrication d'un composant micromecanique

Country Status (4)

Country Link
EP (1) EP2008497A1 (fr)
DE (1) DE102006016811A1 (fr)
TW (1) TW200806568A (fr)
WO (1) WO2007115914A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008040597A1 (de) 2008-07-22 2010-01-28 Robert Bosch Gmbh Mikromechanisches Bauelement mit Rückvolumen
DE102009028177A1 (de) * 2009-07-31 2011-02-10 Robert Bosch Gmbh Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zur Herstellung eines solchen Bauelements
US11873212B2 (en) * 2020-03-02 2024-01-16 Xintec Inc. Chip package and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6741709B2 (en) * 2000-12-20 2004-05-25 Shure Incorporated Condenser microphone assembly
DE10160830A1 (de) * 2001-12-11 2003-06-26 Infineon Technologies Ag Mikromechanische Sensoren und Verfahren zur Herstellung derselben

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007115914A1 *

Also Published As

Publication number Publication date
DE102006016811A1 (de) 2007-10-11
TW200806568A (en) 2008-02-01
WO2007115914A1 (fr) 2007-10-18

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