EP2398044A3 - Procédé de passivation d'une surface en silicone - Google Patents

Procédé de passivation d'une surface en silicone Download PDF

Info

Publication number
EP2398044A3
EP2398044A3 EP11170376.5A EP11170376A EP2398044A3 EP 2398044 A3 EP2398044 A3 EP 2398044A3 EP 11170376 A EP11170376 A EP 11170376A EP 2398044 A3 EP2398044 A3 EP 2398044A3
Authority
EP
European Patent Office
Prior art keywords
silicon surface
passivating
steps
cleaning
drying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11170376.5A
Other languages
German (de)
English (en)
Other versions
EP2398044A2 (fr
Inventor
Bart Vermang
Aude Rothschild
Twan Bearda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Katholieke Universiteit Leuven, Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Katholieke Universiteit Leuven
Publication of EP2398044A2 publication Critical patent/EP2398044A2/fr
Publication of EP2398044A3 publication Critical patent/EP2398044A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
EP11170376.5A 2010-06-17 2011-06-17 Procédé de passivation d'une surface en silicone Withdrawn EP2398044A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35599610P 2010-06-17 2010-06-17

Publications (2)

Publication Number Publication Date
EP2398044A2 EP2398044A2 (fr) 2011-12-21
EP2398044A3 true EP2398044A3 (fr) 2014-07-02

Family

ID=44907523

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11170376.5A Withdrawn EP2398044A3 (fr) 2010-06-17 2011-06-17 Procédé de passivation d'une surface en silicone

Country Status (4)

Country Link
US (1) US20110308603A1 (fr)
EP (1) EP2398044A3 (fr)
JP (1) JP2012039088A (fr)
TW (1) TW201206857A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9040393B2 (en) * 2010-01-14 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
US20130321013A1 (en) * 2010-12-02 2013-12-05 Dow Global Technologies Llc Photovoltaic device for measuring irradiance and temperature
KR101745683B1 (ko) * 2011-01-14 2017-06-09 엘지전자 주식회사 태양 전지 및 그 제조 방법
EP2482328A2 (fr) * 2011-01-31 2012-08-01 Imec Procédé de fabrication pour cellules photovoltaïques à contacts arrière locaux
TWI452714B (zh) * 2012-01-20 2014-09-11 Univ Nat Taiwan 太陽能電池及其製造方法
US9570662B2 (en) 2012-07-10 2017-02-14 Osram Opto Semiconductors Gmbh Method of encapsulating an optoelectronic device and light-emitting diode chip
WO2014030765A1 (fr) * 2012-08-24 2014-02-27 京セラ株式会社 Élément de cellule solaire
CN104037242B (zh) * 2013-03-06 2016-03-16 中美硅晶制品股份有限公司 光伏元件及其制造方法
US20150000729A1 (en) * 2013-06-28 2015-01-01 Mh Solar Company Limited Solar cell with passivation layer and manufacturing method thereof
EP2851696B1 (fr) * 2013-09-24 2016-04-20 Imec Procédé pour l'extraction de caractéristiques de recombinaison au niveau de surfaces métallisées de semi-conducteurs
JP2016009730A (ja) * 2014-06-23 2016-01-18 株式会社東芝 半導体装置の製造方法
KR101580220B1 (ko) * 2014-07-08 2015-12-24 현대중공업 주식회사 양면 알루미늄 산화막과 패턴된 후면전극을 사용한 태양전지의 제조방법 및 그에 의한 태양전지
KR101575967B1 (ko) * 2014-07-08 2015-12-08 현대중공업 주식회사 알루미늄 산화막(AlOx)을 양면 증착한 PERL 태양전지의 제조방법 및 그에 의한 태양전지
US9911591B2 (en) * 2015-05-01 2018-03-06 Applied Materials, Inc. Selective deposition of thin film dielectrics using surface blocking chemistry
KR20180013276A (ko) * 2016-07-29 2018-02-07 에스케이실트론 주식회사 반도체 기판의 전처리 조건의 평가 방법 및 라이프 타임 측정 방법
CN108074989A (zh) * 2016-11-14 2018-05-25 Lg电子株式会社 太阳能电池及其制造方法
CN112701187B (zh) * 2020-12-28 2022-11-22 天合光能股份有限公司 一种切片电池边缘钝化方法及设备
CN115224153B (zh) * 2021-03-31 2023-09-22 浙江晶科能源有限公司 太阳能电池片及其制备方法
CN119789603A (zh) * 2024-12-19 2025-04-08 天合光能股份有限公司 太阳能电池及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1489667A2 (fr) * 2003-06-20 2004-12-22 Interuniversitair Microelektronica Centrum Vzw Procedé de passivation de la surface arrière de cellules solaires et cellules solairer avec une telle passivation

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6058945A (en) * 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
US6701941B1 (en) * 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US20020121290A1 (en) * 1999-08-25 2002-09-05 Applied Materials, Inc. Method and apparatus for cleaning/drying hydrophobic wafers
US6468362B1 (en) * 1999-08-25 2002-10-22 Applied Materials, Inc. Method and apparatus for cleaning/drying hydrophobic wafers
KR100848423B1 (ko) * 2000-09-19 2008-07-28 맷슨 테크놀로지, 인크. 유전체 코팅 및 유전체 코팅을 형성하는 방법
US6521050B1 (en) 2000-12-27 2003-02-18 Lam Research Corporation Methods for evaluating advanced wafer drying techniques
US6974604B2 (en) * 2001-09-28 2005-12-13 Hrl Laboratories, Llc Method of self-latching for adhesion during self-assembly of electronic or optical components
US6875087B2 (en) * 2003-05-13 2005-04-05 Novellus Systems, Inc. Method for chemical mechanical planarization (CMP) and chemical mechanical cleaning (CMC) of a work piece
US20060196527A1 (en) * 2005-02-23 2006-09-07 Tokyo Electron Limited Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods
US8162555B2 (en) * 2005-07-21 2012-04-24 The Regents Of The University Of California Printing pins having selective wettability and method of making same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1489667A2 (fr) * 2003-06-20 2004-12-22 Interuniversitair Microelektronica Centrum Vzw Procedé de passivation de la surface arrière de cellules solaires et cellules solairer avec une telle passivation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BURKMAN DON C ET AL: "Chapter 3. Aqueous Cleaning Processes", 1 January 1993, HANDBOOK OF SEMICONDUCTOR WAFER CLEANING TECHNOLOGY, NOYES PUBLICATIONS, WESTWOOD, NJ, US, PAGE(S) 111 - 197, XP008093604 *
KERN W ET AL: "CLEANING SOLUTIONS BASED ON HYDROGEN PEROXIDE FOR USE IN SILICON SEMICONDUCTOR TECHNOLOGY", RCA REVIEW, RCA CORP. PRINCETON, US, vol. 31, 1 June 1970 (1970-06-01), pages 187 - 206, XP000605014 *
M BRUBAKER ET AL: "Monitoring of Chemical Oxide Removal from Silicon Surfaces Using a Surface Photovoltage Technique", ELECTROCHEMICAL AND SOLID-STATE LETTERS, 1 January 1998 (1998-01-01), pages 130 - 132, XP055118306, Retrieved from the Internet <URL:http://esl.ecsdl.org/content/1/3/130.full.pdf> [retrieved on 20140515] *

Also Published As

Publication number Publication date
EP2398044A2 (fr) 2011-12-21
TW201206857A (en) 2012-02-16
US20110308603A1 (en) 2011-12-22
JP2012039088A (ja) 2012-02-23

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