WO2009120631A3 - Procédé de nettoyage et de texturation de surface pour cellules solaires cristallines - Google Patents

Procédé de nettoyage et de texturation de surface pour cellules solaires cristallines Download PDF

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Publication number
WO2009120631A3
WO2009120631A3 PCT/US2009/037968 US2009037968W WO2009120631A3 WO 2009120631 A3 WO2009120631 A3 WO 2009120631A3 US 2009037968 W US2009037968 W US 2009037968W WO 2009120631 A3 WO2009120631 A3 WO 2009120631A3
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WO
WIPO (PCT)
Prior art keywords
substrate
solar cells
surface cleaning
texturing process
crystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/037968
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English (en)
Other versions
WO2009120631A2 (fr
Inventor
Kapila Wijekoon
Rohit Mishra
Michael P. Stewart
Timothy Weidman
Hari Ponnekanti
Tristan R. Holtam
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Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2011501953A priority Critical patent/JP2011515872A/ja
Priority to CN2009801144089A priority patent/CN102017176A/zh
Publication of WO2009120631A2 publication Critical patent/WO2009120631A2/fr
Publication of WO2009120631A3 publication Critical patent/WO2009120631A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

L’invention porte sur des procédés de texturation de surface d’un substrat de silicium cristallin. Dans un mode de réalisation, le procédé comprend la fourniture d’un substrat de silicium cristallin, l’humidification dudit substrat à l’aide d’une solution alcaline incluant un agent mouillant, et la formation d’une surface texturée avec une structure d’une profondeur comprise entre environ 1 µm et environ 10 µm sur le substrat. Dans un autre mode de réalisation, un procédé permettant de réaliser une texture sur un substrat comprend la fourniture d’un substrat de silicium cristallin, le pré-nettoyage du substrat dans une solution aqueuse HF, l’humidification du substrat à l’aide d’une solution aqueuse KOH incluant un composé polyéthylène glycol (PEG), et la formation d’une surface texturée avec une structure d’une profondeur comprise entre environ 3 µm et environ 8 µm sur le substrat.
PCT/US2009/037968 2008-03-25 2009-03-23 Procédé de nettoyage et de texturation de surface pour cellules solaires cristallines Ceased WO2009120631A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011501953A JP2011515872A (ja) 2008-03-25 2009-03-23 結晶太陽電池の表面クリーニング及び凹凸形成プロセス
CN2009801144089A CN102017176A (zh) 2008-03-25 2009-03-23 结晶太阳能电池的表面清洁与纹理化工艺

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3938408P 2008-03-25 2008-03-25
US61/039,384 2008-03-25
US14832209P 2009-01-29 2009-01-29
US61/148,322 2009-01-29
US15717909P 2009-03-03 2009-03-03
US61/157,179 2009-03-03

Publications (2)

Publication Number Publication Date
WO2009120631A2 WO2009120631A2 (fr) 2009-10-01
WO2009120631A3 true WO2009120631A3 (fr) 2010-01-07

Family

ID=41114618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/037968 Ceased WO2009120631A2 (fr) 2008-03-25 2009-03-23 Procédé de nettoyage et de texturation de surface pour cellules solaires cristallines

Country Status (6)

Country Link
US (2) US8129212B2 (fr)
JP (1) JP2011515872A (fr)
KR (1) KR20100125448A (fr)
CN (1) CN102017176A (fr)
TW (1) TW201001508A (fr)
WO (1) WO2009120631A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9876128B2 (en) 2015-09-07 2018-01-23 Imec Vzw Texturing monocrystalline silicon substrates

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* Cited by examiner, † Cited by third party
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