EP2455973A2 - Hétérostructure de diamant et de nitrure d'aluminium de bore - Google Patents

Hétérostructure de diamant et de nitrure d'aluminium de bore Download PDF

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Publication number
EP2455973A2
EP2455973A2 EP12155538A EP12155538A EP2455973A2 EP 2455973 A2 EP2455973 A2 EP 2455973A2 EP 12155538 A EP12155538 A EP 12155538A EP 12155538 A EP12155538 A EP 12155538A EP 2455973 A2 EP2455973 A2 EP 2455973A2
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EP
European Patent Office
Prior art keywords
diamond
aln
hemt
layer
type
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EP12155538A
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German (de)
English (en)
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EP2455973B1 (fr
EP2455973A3 (fr
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Jeffrey R Laroche
William E Hoke
Steven D Bernstein
Ralph Korenstein
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Raytheon Co
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Raytheon Co
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/871—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group I-VI materials, e.g. Cu2O; being Group I-VII materials, e.g. CuI

Definitions

  • This invention relates generally to heterojunction and more particularly to diamond heterojunctions.
  • a heterostructure is a semiconductor junction having layers of dissimilar semiconductor material with unequal bandgaps and wherein carriers generated in one material fall into a quantum well or channel layer provided by the other material.
  • GaN gallium nitride
  • semiconductors devices having gallium nitride (GaN) based channel layers electronics owing to GaN's high mobility, saturation velocity, breakdown field, chemical and thermal stability, and large band gap. These factors lead to power densities 10x that of gallium arsenide (GaAs) based devices, and make GaN the primary candidate for many power electronics applications.
  • GaAs gallium arsenide
  • Diamond has the potential to be the material of choice for the next generation of power devices.
  • Diamond is comparable to or better than GaN in almost every category. Specifically, its electron and hole mobilities, band gap, breakdown voltage and thermal conductivity exceed that of GaN. In particular, the thermal conductivity of diamond (6-20 W cm -1 °C -1 ) is also noteworthy. At a typical output power density of 5 W/mm, the performance of GaN HEMTs is thermally degraded on current substrates even when grown on SiC (thermal conductivity of 3.6-4.9 W cm -1 °C -1 depending on polytype).
  • a B (x) Al (1-x) N/Diamond heterojunction structure 10 here a high electron mobility transistor (HEMT) is shown formed on a diamond substrate 12 where x is between 0 and 1. More particularly, a diamond buffer layer 14 is formed on the diamond substrate 12, here with the surface of the diamond substrate 12 preferably having a (111) crystallographic orientation.
  • a B (x) Al (1-x) N layer 16 is grown epitaxially using plasma molecular beam epitaxy (MBE) on the surface of the diamond buffer layer preferably having a (111) crystallographic orientation to form a heterojunction with the diamond buffer layer 14.
  • MBE plasma molecular beam epitaxy
  • Source and drain contacts 20, 22, here for example Ti/Al/Pt/Au are formed in ohmic contact with the B (x) Al (1-x) N layer and a gate contact 24, here for example Ni/Pt/Au, is formed in Schottky contact with the B (x) Al (1-x) N layer 14.
  • a gate contact 24, here for example Ni/Pt/Au is formed in Schottky contact with the B (x) Al (1-x) N layer 14.
  • the structure has two dimensional (2D) localizations of electrons 26 in the diamond buffer layer 14 (i.e., the diamond buffer layer provides the channel layer which provides a quantum well for the carriers in close proximity to the B(x)Al(1-x)N/ heterojunction.
  • the relative values of the bandgaps for the B (x) Al (1-x) N /Diamond heterostructure 10 are useful in order to understand the HEMT structure of FIG, 1 where the 2D gas is localized in the smaller bandgap diamond part of the device.
  • the conduction and valence band offsets that occur at the B (x) Al (1-x) N /Diamond interface.
  • the conduction band offset localizes the carriers into a two dimensional gas (2D gas) of electrons that enhances the mobility of the device.
  • the valence band offset helps to suppress gate leakage current due to impact ionization generation of holes (important in power devices).
  • the roles of the band offsets are reversed.
  • the valence offset band would localize the 2D gas of holes, while the conduction band offset would confine electrons generated during impact ionization.
  • the size of the conduction (valence) band discontinuity partly determines the concentration of free carriers in the 2-Dimensional gas and thus directly impacts the current of the device.
  • the conduction band offset is only ⁇ .2 ev, while the valence band offset is about ⁇ .53 ev.
  • a p-type HEMT should be possible, while an n-type HEMT would have low current due to the small conduction band offset.
  • Another concern, which is discussed later, is that this conduction band offset could be reduced further (or even eliminated) by strain induced by lattice mismatch between the B (x) Al (1-x) N and Diamond.
  • the conduction band and valence band discontinuities are increased by alloying Boron into AlN.
  • BN is an indirect semiconductor, it has a large direct bandgap.
  • the ternary bandgap (which for small Boron concentrations will be direct) will increase until the material becomes indirect. After the material becomes indirect, the bandgap will decrease with additional boron incorporation (due to the small indirect k valley bandgap of BN).
  • the band gaps of the different B (x) Al (1-x) N valleys based on composition are calculated.
  • the desirable direct bandgap is the Gamma Valley. On the left, the minimum band gaps by composition, but not including bowing are highlighted.
  • the bowing band gaps are calculated assuming first a bow parameter of 1, and then a parameter of 3. These parameters were assumed based on AlGaN (bow parameter of 1) and InAlN (bow parameter of 3) because the bow parameter for B (x) Al (1-x) N is not known.
  • Below the top set of data is another set of data. The difference between the two sets is that they assume different band gaps for the K valley in BN because the quoted range was 4.5-5.5 eV.
  • the top set of data is 4.5 eV (worst case scenario), the bottom set is 5.5 eV (best case scenario).
  • the largest band gap is at 20-25% BN concentration. Without including conduction band bowing, the maximum bandgap is ⁇ 6.77 eV. By including conduction band bowing, the maximum values range from ⁇ 6.2-6.6 eV. Therefore in most cases the bandgap and the conduction and valence band discontinuities with diamond are increased by alloying boron into AlN, increasing the current density and confinement capability of the structure. If other crystal structures are used in these calculations, the numbers will be different but the concepts put forward herein will be the same.
  • B (x) Al (1-x) N /Diamond heterostructure of hexagonal AlN on cubic (100) diamond would be problematic for several reasons. In addition to the large mismatch, growing hexagonal films on a cubic structure will cause a significant number of defects at the AlN/Diamond interface, degrading the HEMT device structure. Instead here the boron aluminum nitride (B (x) Al (1-x) N) is more favorably grown on (111) Diamond. There are several benefits of this. First, the orientation of the carbon atoms in diamond appears as a hexagonal lattice. Consequently growth on a hexagonal material on a hexagonal substrate which would minimize defect formation at the critical interface of B (x) Al (1-x) N/Diamond.
  • This lattice constant is less than B (x) Al (1-x) N.
  • B (x) Al (1-x) N should experience biaxial compressive strain when grown on (111) diamond.
  • Compressive strain on the BAlN from the diamond substrate will have the effect of increasing the bandgap of B (x) Al (1-x) N rather than decreasing it as biaxial tensile strain on B (x) Al (1-x) N would cause.
  • adding boron into AlN not only increases the bandgap, but also slightly reduces the lattice mismatch with diamond by making the ternary lattice constant smaller.
  • a final consideration in employing the (111) orientation is that AlN and consequently BAlN exhibits a large piezoelectric effect and spontaneous polarization. These properties have been exploited in GaN HEMTs to achieve high device currents without doping.
  • the (111) orientation maximizes the effects. Consequently another approach to overcoming doping difficulties in the BAlN/diamond HEMT structure is to exploit the piezoelectric effect and spontaneous polarization.
  • the method of providing electrons and holes for n and p type HEMT devices must be established.
  • diamond can be doped p-type by boron to very high levels (1*10 19 /cm 3 ), however reliable n type doping for single crystal diamond has remained elusive.
  • the B (x) Al (1-x) N can be doped with donors, here the B (x) Al (1-x) N is doped n-type and used to provide carriers to the Diamond 2D gas in n-type HEMT device structures.
  • FIGS. 1 - 7 it can be seen that in addition to HEMTs fabricated on diamond substrates that HEMT structures on substrates other than diamond. For example growing diamond on AlN substrates, or AlN/SiC substrates. The primary advantage is that such substrates are available in large substrate sizes and are more economical than diamond.
  • FIG. 2 is a sketch of a B (x) Al (1-x) N/Diamond heterojunction structure, here a high electron mobility transistor (HEMT), formed an AlN or SiC substrate 12' with 2D localizations of electrons in the diamond buffer layer 14.
  • HEMT high electron mobility transistor
  • FIG. 3 is a sketch of a B (x) Al (1-x) N/Diamond double heterostructure HEMT formed on a AlN or SiC substrate 12' with 2D localization of electrons in the diamond channel, i.e., layer 14 which is sandwiched between a pair of B (x) Al (1-x) N layers 16a, 16b.
  • the B (x) Al (1-x) N layers 16a, 16b are either uniformly n-type doped or n-type pulse doped.
  • FIG. 4 is a sketch of a B (x) Al (1-x) N/Diamond double heterostructure HEMT formed on a diamond substrate 12 with 2D localization of electrons in a diamond channel, i.e., layer 14.
  • FIG. 5 is a sketch of an Inverted Diamond/B (x) Al (1-x) N HEMT formed on an AlN or SiC substrate 12', with 2D localization of electrons in the diamond at the Diamond/B (x) Al (1-x) N interface.
  • the B (x) Al (1-x) N layer 16 is epitaxially formed on the substrate 12' and the diamond channel, i.e., layer 14 is formed on the B (x) Al (1-x) N layer 16.
  • the source and drain contacts are formed in ohmic contact with the diamond channel, i.e., layer 14 and the gate contact is formed in Schottky contact with the diamond channel, i.e., layer 14.
  • FIG. 6 is a sketch of a B (x) Al (1-x) N/Diamond double heterostructure HEMT formed on a AlN or Silicon Carbide substrate 12' with an additional AlN buffer layer 30 formed on the substrate 12' with the lower B (x) Al (1-x) N layers 16b formed on the AlN layer 30 and with 2D localization of electrons in a diamond channel layer 14.
  • FIG. 7 is a sketch of a recessed gate B (x) Al (1-x) N/Diamond MESFET formed on a diamond substrate 12.
  • the gate contact 24 is formed in Schottky contact with the diamond buffer channel layer 14,

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
EP12155538.7A 2006-11-08 2007-10-19 Hétérostructure de diamant et de nitrure d'aluminium de bore Active EP2455973B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/557,514 US7557378B2 (en) 2006-11-08 2006-11-08 Boron aluminum nitride diamond heterostructure
EP07852863A EP2082431B1 (fr) 2006-11-08 2007-10-19 Transistor à effet de champ comprenant une hétérostructure de diamant et nitrure d'aluminium et de bore

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP07852863.5 Division 2007-10-19
EP07852863A Division EP2082431B1 (fr) 2006-11-08 2007-10-19 Transistor à effet de champ comprenant une hétérostructure de diamant et nitrure d'aluminium et de bore

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EP2455973A2 true EP2455973A2 (fr) 2012-05-23
EP2455973A3 EP2455973A3 (fr) 2012-09-12
EP2455973B1 EP2455973B1 (fr) 2016-03-23

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EP12155538.7A Active EP2455973B1 (fr) 2006-11-08 2007-10-19 Hétérostructure de diamant et de nitrure d'aluminium de bore
EP07852863A Active EP2082431B1 (fr) 2006-11-08 2007-10-19 Transistor à effet de champ comprenant une hétérostructure de diamant et nitrure d'aluminium et de bore

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US (2) US7557378B2 (fr)
EP (2) EP2455973B1 (fr)
AT (1) ATE551724T1 (fr)
WO (1) WO2008057193A1 (fr)

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US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
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US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
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JP2013229493A (ja) * 2012-04-26 2013-11-07 Sharp Corp Ｉｉｉ族窒化物半導体積層基板およびｉｉｉ族窒化物半導体電界効果トランジスタ
WO2013177514A1 (fr) 2012-05-24 2013-11-28 Raytheon Company Combinateur cohérent pour faisceaux de grande puissance
NZ713761A (en) 2013-05-24 2017-05-26 Raytheon Co Adaptive-optic having meander resistors
US9876102B2 (en) 2015-07-17 2018-01-23 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple carrier channels
US11069834B2 (en) 2017-09-18 2021-07-20 King Abdullah University Of Science And Technology Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
CN107731916B (zh) * 2017-10-12 2024-02-13 中国电子科技集团公司第十三研究所 半导体器件及利用异质结形成金刚石n型导电沟道的方法
WO2019077474A1 (fr) * 2017-10-16 2019-04-25 King Abdullah University Of Science And Technology Dispositifs à semi-conducteur au nitrure iii ayant une couche de contact en alliage de nitrure de bore et procédé de production
CN111223927B (zh) * 2020-04-22 2021-07-30 浙江集迈科微电子有限公司 GaN-金刚石-Si半导体结构、器件及制备方法
CN115440812B (zh) * 2022-09-30 2026-02-10 中科苏州微电子产业技术研究院 一种基于金刚石的横向hemt器件及其制造方法
CN116313745B (zh) * 2023-01-09 2026-01-23 西安电子科技大学 一种改善晶格失配的硼铝氮/金刚石二维电子气异质结结构及其制备方法
CN119855166A (zh) * 2024-12-31 2025-04-18 武汉大学 基于极化界面二维电子气效应的金刚石二极管及其制备方法

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Also Published As

Publication number Publication date
EP2082431A1 (fr) 2009-07-29
US7557378B2 (en) 2009-07-07
ATE551724T1 (de) 2012-04-15
EP2455973B1 (fr) 2016-03-23
EP2455973A3 (fr) 2012-09-12
US20080121897A1 (en) 2008-05-29
US20100090228A1 (en) 2010-04-15
US7968865B2 (en) 2011-06-28
EP2082431B1 (fr) 2012-03-28
WO2008057193A1 (fr) 2008-05-15

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