EP2887176A1 - Elektronischer Schaltkreis mit selbst kalibriertem PTAT-Referenzstrom, und sein Einsatzverfahren - Google Patents

Elektronischer Schaltkreis mit selbst kalibriertem PTAT-Referenzstrom, und sein Einsatzverfahren Download PDF

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Publication number
EP2887176A1
EP2887176A1 EP13198965.9A EP13198965A EP2887176A1 EP 2887176 A1 EP2887176 A1 EP 2887176A1 EP 13198965 A EP13198965 A EP 13198965A EP 2887176 A1 EP2887176 A1 EP 2887176A1
Authority
EP
European Patent Office
Prior art keywords
current
ptat
electronic circuit
transistors
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP13198965.9A
Other languages
English (en)
French (fr)
Other versions
EP2887176B1 (de
Inventor
Arnaud Casagrande
Jean-Luc Arend
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Swatch Group Research and Development SA
Original Assignee
Swatch Group Research and Development SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Swatch Group Research and Development SA filed Critical Swatch Group Research and Development SA
Priority to EP13198965.9A priority Critical patent/EP2887176B1/de
Priority to US14/558,839 priority patent/US9442509B2/en
Priority to TW103142196A priority patent/TWI675275B/zh
Priority to JP2014253730A priority patent/JP5918344B2/ja
Priority to CN201410784806.4A priority patent/CN104731148B/zh
Priority to KR1020140184793A priority patent/KR101749794B1/ko
Publication of EP2887176A1 publication Critical patent/EP2887176A1/de
Priority to HK15112380.6A priority patent/HK1211715B/xx
Application granted granted Critical
Publication of EP2887176B1 publication Critical patent/EP2887176B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

Definitions

  • This programmable resistor 8 can be composed of a network of resistors and programmable switches.
  • the resistor network comprises several resistors of unit value in series and / or partly in parallel.
  • switches may be provided by being connected in parallel with each unit resistor or groups of unit resistors, which is well known. The switches are controlled by digital signals or a control bit word from the processing unit 7 so as to bypass a number of unit resistors to adapt the resistive value of the programmable resistor 8.
  • the first current mirror comprises a first NMOS transistor N1 whose source is connected to ground, and the drain and the gate are connected together, and a second NMOS transistor N2 whose gate is connected to the gate of the first transistor NMOS N1 and the source is connected to the switched capacitor resistor 12, as well as to a filter capacitor C f .
  • the switched capacitor resistor 12 and the filter capacitor C f are also connected to the ground terminal in this embodiment.
  • the switched capacitor resistor 12 therefore comprises a capacitor C, a first electrode of which is connected to a first switch 4 and to a second switch 5.
  • a second electrode of the capacitor C is connected to the ground terminal.
  • this capacitor C may be a CMOS capacitor type capacitor or a thin oxide metal electrode capacitor. This makes it possible to have a switched capacitor resistor 12 with an accuracy of the order of ⁇ 5%, whereas an integrated standard resistor 8 is produced with an accuracy of the order of ⁇ 30%.
  • the first current mirror with the NMOS transistors can be replaced by a first current mirror with PMOS transistors, which is connected to the high potential terminal V DD
  • the second current mirror with the PMOS transistors can be replaced by a second current mirror with NMOS transistors, which is connected to the ground terminal.
  • the switched capacitor resistor 12 and the programmable resistor 8 are connected to the high potential terminal V DD .

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
EP13198965.9A 2013-12-20 2013-12-20 Elektronischer Schaltkreis mit selbst kalibriertem PTAT-Referenzstrom, und sein Einsatzverfahren Active EP2887176B1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP13198965.9A EP2887176B1 (de) 2013-12-20 2013-12-20 Elektronischer Schaltkreis mit selbst kalibriertem PTAT-Referenzstrom, und sein Einsatzverfahren
US14/558,839 US9442509B2 (en) 2013-12-20 2014-12-03 Electronic circuit with self-calibrated PTAT current reference and method for actuating the same
TW103142196A TWI675275B (zh) 2013-12-20 2014-12-04 具有自校準ｐｔａｔ電流參考的電子電路及對其致動的方法
JP2014253730A JP5918344B2 (ja) 2013-12-20 2014-12-16 自己較正されるｐｔａｔ電流基準を備えた電子回路及びこれを作動させる方法
CN201410784806.4A CN104731148B (zh) 2013-12-20 2014-12-17 具有ptat电流基准的电子电路及致动该电路的方法
KR1020140184793A KR101749794B1 (ko) 2013-12-20 2014-12-19 자기-교정된 ptat 전류 기준을 갖는 전자 회로 및 그것을 구동하는 방법
HK15112380.6A HK1211715B (en) 2013-12-20 2015-12-16 Electronic circuit with self-calibrated ptat current reference and method for actuating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP13198965.9A EP2887176B1 (de) 2013-12-20 2013-12-20 Elektronischer Schaltkreis mit selbst kalibriertem PTAT-Referenzstrom, und sein Einsatzverfahren

Publications (2)

Publication Number Publication Date
EP2887176A1 true EP2887176A1 (de) 2015-06-24
EP2887176B1 EP2887176B1 (de) 2022-09-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP13198965.9A Active EP2887176B1 (de) 2013-12-20 2013-12-20 Elektronischer Schaltkreis mit selbst kalibriertem PTAT-Referenzstrom, und sein Einsatzverfahren

Country Status (6)

Country Link
US (1) US9442509B2 (de)
EP (1) EP2887176B1 (de)
JP (1) JP5918344B2 (de)
KR (1) KR101749794B1 (de)
CN (1) CN104731148B (de)
TW (1) TWI675275B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10078016B2 (en) 2016-02-10 2018-09-18 Nxp Usa, Inc. On-die temperature sensor for integrated circuit
CN106055009A (zh) * 2016-06-17 2016-10-26 中国科学院微电子研究所 一种高精度带隙基准电路
CN108566173B (zh) * 2018-06-11 2024-11-26 杨俊杰 一种采用cmos工艺芯片内部的rc时间常数校正电路
CN109341890B (zh) * 2018-10-22 2021-05-14 安徽鸿创新能源动力有限公司 一种基于ntc温度传感器的bms温度采集系统及测量方法
US10747254B1 (en) * 2019-09-03 2020-08-18 Globalfoundries Inc. Circuit structure for adjusting PTAT current to compensate for process variations in device transistor
CN115235649B (zh) * 2021-04-25 2026-03-27 平头哥(上海)半导体技术有限公司 数字温度传感器
CN113253787A (zh) * 2021-06-17 2021-08-13 苏州裕太微电子有限公司 一种芯片内电阻校正电路
US11962311B2 (en) 2021-10-20 2024-04-16 Samsung Electronics Co., Ltd. Sub-sampling phase locked loop with compensated loop bandwidth and integrated circuit including the same
CN116795165B (zh) * 2023-07-25 2024-04-05 南京米乐为微电子科技股份有限公司 一种ptat电流源的输出调节电路
CN121596954A (zh) * 2026-01-30 2026-03-03 山东云海国创云计算装备产业创新中心有限公司 一种偏置电流产生电路及电子设备

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US7076384B1 (en) * 2004-09-29 2006-07-11 Xilinx, Inc. Method and apparatus for calibrating a current-based circuit
EP1712973A2 (de) * 2005-04-12 2006-10-18 St Microelectronics S.A. Stromkreis zur Erzeugung eines Bezugsstroms
US20060276986A1 (en) * 2005-06-06 2006-12-07 Standard Microsystems Corporation Automatic reference voltage trimming technique

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EP1155412A1 (de) * 1999-02-22 2001-11-21 Rose Research, L.L.C. Selbstregenerierende komparatorschaltung mit selbsttätiger eichung und verfahren dafür
US6987966B1 (en) * 1999-10-21 2006-01-17 Broadcom Corporation Adaptive radio transceiver with polyphase calibration
TW476418U (en) * 1999-11-26 2002-02-11 Ind Tech Res Inst Peak value collection and its calibration circuit
US6622927B2 (en) * 2001-05-08 2003-09-23 Ion E. Opris Low voltage thermostat circuit
US6954059B1 (en) * 2003-04-16 2005-10-11 National Semiconductor Corporation Method and apparatus for output voltage temperature dependence adjustment of a low voltage band gap circuit
JP2005128939A (ja) * 2003-10-27 2005-05-19 Fujitsu Ltd 半導体集積回路
JP2007531404A (ja) * 2004-03-22 2007-11-01 モビウス マイクロシステムズ，インク． モノリシックなクロック・ジェネレータおよびタイミング／周波数リファレンス
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US6844711B1 (en) * 2003-04-15 2005-01-18 Marvell International Ltd. Low power and high accuracy band gap voltage circuit
US7076384B1 (en) * 2004-09-29 2006-07-11 Xilinx, Inc. Method and apparatus for calibrating a current-based circuit
EP1712973A2 (de) * 2005-04-12 2006-10-18 St Microelectronics S.A. Stromkreis zur Erzeugung eines Bezugsstroms
US20060276986A1 (en) * 2005-06-06 2006-12-07 Standard Microsystems Corporation Automatic reference voltage trimming technique

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Also Published As

Publication number Publication date
TW201541219A (zh) 2015-11-01
JP5918344B2 (ja) 2016-05-18
KR20150073122A (ko) 2015-06-30
KR101749794B1 (ko) 2017-06-21
HK1211715A1 (en) 2016-05-27
CN104731148B (zh) 2016-08-31
US9442509B2 (en) 2016-09-13
US20150177772A1 (en) 2015-06-25
EP2887176B1 (de) 2022-09-14
CN104731148A (zh) 2015-06-24
JP2015122494A (ja) 2015-07-02
TWI675275B (zh) 2019-10-21

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