EP3132467A4 - Technologies de métrologie de tranche - Google Patents

Technologies de métrologie de tranche Download PDF

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Publication number
EP3132467A4
EP3132467A4 EP15779557.6A EP15779557A EP3132467A4 EP 3132467 A4 EP3132467 A4 EP 3132467A4 EP 15779557 A EP15779557 A EP 15779557A EP 3132467 A4 EP3132467 A4 EP 3132467A4
Authority
EP
European Patent Office
Prior art keywords
wafer metrology
metrology technologies
technologies
wafer
metrology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP15779557.6A
Other languages
German (de)
English (en)
Other versions
EP3132467A1 (fr
Inventor
Viktor Koldiaev
Marc KRYGER
John CHANGALA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Femtometrics Inc
Original Assignee
Femtometrics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Femtometrics Inc filed Critical Femtometrics Inc
Publication of EP3132467A1 publication Critical patent/EP3132467A1/fr
Publication of EP3132467A4 publication Critical patent/EP3132467A4/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
EP15779557.6A 2014-04-17 2015-04-16 Technologies de métrologie de tranche Pending EP3132467A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461980860P 2014-04-17 2014-04-17
PCT/US2015/026263 WO2015161136A1 (fr) 2014-04-17 2015-04-16 Technologies de métrologie de tranche

Publications (2)

Publication Number Publication Date
EP3132467A1 EP3132467A1 (fr) 2017-02-22
EP3132467A4 true EP3132467A4 (fr) 2017-11-01

Family

ID=54324589

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15779557.6A Pending EP3132467A4 (fr) 2014-04-17 2015-04-16 Technologies de métrologie de tranche

Country Status (4)

Country Link
US (14) US20150330908A1 (fr)
EP (1) EP3132467A4 (fr)
KR (1) KR102609862B1 (fr)
WO (1) WO2015161136A1 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015161136A1 (fr) 2014-04-17 2015-10-22 Femtometrix, Inc. Technologies de métrologie de tranche
WO2016077617A1 (fr) 2014-11-12 2016-05-19 Femtometrix, Inc. Systèmes permettant d'analyser des propriétés matérielles dans des signaux shg
US10763179B2 (en) * 2015-02-27 2020-09-01 Semilab Semiconductor Physics Laboratory Co., Ltd. Non-contact method to monitor and quantify effective work function of metals
KR102533125B1 (ko) 2015-09-03 2023-05-15 캘리포니아 인스티튜트 오브 테크놀로지 높은-ｋ 유전체를 특징화하는 시스템 및 방법
FR3049710B1 (fr) * 2016-03-31 2020-06-19 Unity Semiconductor Procede et systeme d'inspection par effet doppler laser de plaquettes pour la microelectronique ou l'optique
US10533836B2 (en) * 2016-09-15 2020-01-14 The Regents Of The University Of Michigan Multidimensional coherent spectroscopy using frequency combs
WO2018159272A1 (fr) * 2017-02-28 2018-09-07 国立大学法人東京工業大学 Dispositif de microscope électronique à photoémission à résolution temporelle et procédé d'acquisition d'image dynamique de porteuse à l'aide dudit dispositif
GB2587940B (en) * 2018-04-02 2023-06-14 Applied Materials Inc Inline chamber metrology
WO2019210265A1 (fr) * 2018-04-27 2019-10-31 Femtometrix, Inc. Systèmes et méthodes de détermination de caractéristiques de dispositifs à semi-conducteurs
WO2019210229A1 (fr) * 2018-04-27 2019-10-31 SK Hynix Inc. Métrologie optique non linéaire polarisée par champ utilisant une source de décharge corona
US11946863B2 (en) 2018-05-15 2024-04-02 Femtometrix, Inc. Second Harmonic Generation (SHG) optical inspection system designs
US11150313B1 (en) * 2018-05-25 2021-10-19 Hrl Laboratories, Llc On-chip excitation and readout architecture for high-density magnetic sensing arrays based on quantum defects
KR102750068B1 (ko) * 2018-09-18 2025-01-03 삼성전자주식회사 기판의 결함 검출 방법 및 이를 수행하기 위한 장치
TWI843737B (zh) * 2019-07-09 2024-06-01 韓商愛思開海力士有限公司 光學查驗樣品表面的方法及其系統
KR102370795B1 (ko) * 2020-03-25 2022-03-07 고려대학교 산학협력단 반도체 소자에 트랩이 미치는 영향을 예측하는 트랩 분석 모델링 시스템 및 그 동작 방법
CN112098498B (zh) * 2020-06-29 2024-05-03 平高集团有限公司 绝缘材料表面缺陷检测方法及装置
KR102628611B1 (ko) * 2020-09-01 2024-01-29 건국대학교 산학협력단 반도체 소자의 시뮬레이션 방법 및 장치
US12553708B2 (en) 2021-05-12 2026-02-17 Femtometrix, Inc. Second-harmonic generation for critical dimensional metrology
JP7773884B2 (ja) * 2021-10-29 2025-11-20 東京エレクトロン株式会社 基板処理方法及び基板処理システム
CN114823406B (zh) * 2022-03-31 2023-03-24 上海微崇半导体设备有限公司 一种基于二次谐波测量半导体多层结构的方法和装置
KR102708172B1 (ko) * 2022-04-06 2024-09-20 동국대학교 산학협력단 반도체 소자의 분석 방법 및 이를 위한 분석 장치
WO2023245019A1 (fr) * 2022-06-15 2023-12-21 Femtometrix, Inc. Métrologie dimensionnelle utilisant une optique non linéaire
WO2024015777A1 (fr) * 2022-07-12 2024-01-18 Femtometrix, Inc. Procédé et appareil pour des mesures shg et de dépôt par effet corona simultanées, non invasives, non intrusives et non mises à la terre
EP4573356A1 (fr) * 2022-08-15 2025-06-25 Trustees of Boston University Système de microscopie photothermique à infrarouge moyen à débit vidéo utilisant un balayage laser synchronisé
US20240176206A1 (en) * 2022-11-29 2024-05-30 Kla Corporation Interface-based thin film metrology using second harmonic generation
JP2024080718A (ja) 2022-12-05 2024-06-17 三星電子株式会社 対象物の表面を検査する装置
CN119223887A (zh) * 2023-06-28 2024-12-31 中国科学院物理研究所 光学二次谐波测量系统及其附带的样品台系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856159B1 (en) * 1999-03-18 2005-02-15 Vanderbilt University Contactless optical probe for use in semiconductor processing metrology
US20060044641A1 (en) * 1999-03-18 2006-03-02 Vanderbilt University Apparatus and methods of using second harmonic generation as a non-invasive optical probe for interface properties in layered structures

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH538687A (de) * 1971-11-23 1973-06-30 Bbc Brown Boveri & Cie Verfahren und Einrichtung zur Untersuchung der Störstellenkonzentration von Halbleitern
JPS55138438A (en) * 1979-04-16 1980-10-29 Olympus Optical Co Automatic exposing device for endoscope
US4286215A (en) * 1979-05-18 1981-08-25 Bell Telephone Laboratories, Incorporated Method and apparatus for the contactless monitoring carrier lifetime in semiconductor materials
US4652757A (en) 1985-08-02 1987-03-24 At&T Technologies, Inc. Method and apparatus for optically determining defects in a semiconductor material
US4812756A (en) 1987-08-26 1989-03-14 International Business Machines Corporation Contactless technique for semicondutor wafer testing
DE68925810T2 (de) 1989-01-13 1996-09-26 Ibm Verfahren und Vorrichtung zur Erzeugung von blaugrüner Lichtstrahlung
JPH0816607B2 (ja) * 1990-10-30 1996-02-21 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜処理制御方法
JP2682465B2 (ja) * 1994-09-26 1997-11-26 株式会社日立製作所 表面計測装置
US5557409A (en) 1994-10-13 1996-09-17 Advanced Micro Devices Inc. Characterization of an external silicon interface using optical second harmonic generation
FR2726369B1 (fr) 1994-11-02 1996-12-20 Alcatel Cable Procede de mesure du declin de potentiel et de la mobilite electronique d'un materiau
US6321601B1 (en) * 1996-08-06 2001-11-27 Brown University Research Foundation Optical method for the characterization of laterally-patterned samples in integrated circuits
US5814820A (en) 1996-02-09 1998-09-29 The Board Of Trustees Of The University Of Illinois Pump probe cross correlation fluorescence frequency domain microscope and microscopy
DE19781728B4 (de) 1996-04-26 2007-10-18 Brown University Research Foundation Optisches Verfahren und System zum Bestimmen mechanischer Eigenschaften eines Materials
US5844684A (en) 1997-02-28 1998-12-01 Brown University Research Foundation Optical method for determining the mechanical properties of a material
US5748317A (en) 1997-01-21 1998-05-05 Brown University Research Foundation Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
IL126949A (en) * 1998-11-08 2004-03-28 Nova Measuring Instr Ltd Apparatus for integrated monitoring of wafers and for process control in semiconductor manufacturing and a method for use thereof
WO2000055885A1 (fr) 1999-03-18 2000-09-21 Vanderbilt University Sonde optique sans contact a utiliser en metrologie de traitement de semiconducteurs
US6512385B1 (en) 1999-07-26 2003-01-28 Paul Pfaff Method for testing a device under test including the interference of two beams
US6147799A (en) 1999-10-08 2000-11-14 Agilent Technologies Inc. Physically compact variable optical delay element having wide adjustment range
US6356377B1 (en) 1999-11-10 2002-03-12 Agere Systems Guardian Corp. Mems variable optical delay lines
JP2002091512A (ja) 2000-09-12 2002-03-29 Meidensha Corp シーケンサのプログラミング支援装置
US6900894B2 (en) 2000-11-16 2005-05-31 Process Diagnostics, Inc. Apparatus and method for measuring dose and energy of ion implantation by employing reflective optics
US6791099B2 (en) 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
US6650800B2 (en) * 2001-03-19 2003-11-18 General Instrument Corporation Time slot tunable all-optical packet data demultiplexer
CN1539090A (zh) 2001-04-12 2004-10-20 �ź㴫 高折射率差纤维波导及其应用
JP3210654B1 (ja) 2001-05-02 2001-09-17 レーザーテック株式会社 光学式走査装置及び欠陥検出装置
US20030148391A1 (en) * 2002-01-24 2003-08-07 Salafsky Joshua S. Method using a nonlinear optical technique for detection of interactions involving a conformational change
US6795175B2 (en) 2002-05-21 2004-09-21 The Boeing Company System and method for imaging contamination on a surface
US6788405B2 (en) 2002-06-12 2004-09-07 The Boeing Company Nonlinear optical system for sensing the presence of contamination on a semiconductor wafer
US6781686B2 (en) 2002-06-19 2004-08-24 The Boeing Company Femtosecond optical surface imaging
US6882414B2 (en) 2002-06-19 2005-04-19 The Boeing Company Broadband infrared spectral surface spectroscopy
US7304305B2 (en) 2002-06-19 2007-12-04 The Boeing Company Difference-frequency surface spectroscopy
US6819844B2 (en) 2002-06-20 2004-11-16 The Boeing Company Fiber-optic based surface spectroscopy
ATE534935T1 (de) * 2002-06-28 2011-12-15 Mosaid Technologies Inc Optischer wellenlängenumwandler basierend auf vier-wellen-mischen
US7248062B1 (en) 2002-11-04 2007-07-24 Kla-Tencor Technologies Corp. Contactless charge measurement of product wafers and control of corona generation and deposition
JP3918054B2 (ja) * 2003-01-23 2007-05-23 独立行政法人物質・材料研究機構 物質の光応答を測定する方法およびその装置
KR101159070B1 (ko) 2003-03-11 2012-06-25 삼성전자주식회사 고유전율 산화막 형성방법, 이 방법으로 형성된 유전막이구비된 커패시터 및 그 제조방법
JP2004311580A (ja) 2003-04-03 2004-11-04 Toshiba Corp 半導体評価装置及び半導体評価方法
JP2005035235A (ja) 2003-07-18 2005-02-10 Noritsu Koki Co Ltd 画像露光装置
US20050058165A1 (en) * 2003-09-12 2005-03-17 Lightwave Electronics Corporation Laser having <100>-oriented crystal gain medium
WO2005054829A2 (fr) * 2003-11-25 2005-06-16 The Board Of Trustees Of The Leland Stanford Junior University Procede permettant de determiner le profil de non-linearite optique d'un materiau
US7362496B2 (en) 2004-04-20 2008-04-22 The Boeing Company Fiber gain medium and method of coupling pump energy into the same
JP2006054375A (ja) * 2004-08-13 2006-02-23 Shin Etsu Handotai Co Ltd 半導体ウェーハの評価装置
US7202691B2 (en) 2005-05-31 2007-04-10 Semiconductor Diagnostics, Inc. Non-contact method for acquiring charge-voltage data on miniature test areas of semiconductor product wafers
US7580138B2 (en) 2005-07-12 2009-08-25 Sematech, Inc. Methods and systems for characterizing semiconductor materials
US7433056B1 (en) 2005-07-15 2008-10-07 Kla-Tencor Technologies Corporation Scatterometry metrology using inelastic scattering
WO2007022538A2 (fr) 2005-08-19 2007-02-22 Kla-Tencor Technologies Corporation Plots d'essai, procedes et systemes de mesure des proprietes d'une tranche de silicium et systemes et procedes de controle du depot d'une charge sur une tranche pour en mesurer une ou plusieurs proprietes electriques
WO2007049259A1 (fr) * 2005-10-24 2007-05-03 Optical Metrology Patents Limited Dispositif et procede de mesure optique
US7718969B2 (en) * 2005-12-27 2010-05-18 Rensselaer Polytechnic Institute Methods and systems for generating amplified terahertz radiation for analyzing remotely-located objects
KR100683384B1 (ko) 2005-12-30 2007-02-15 동부일렉트로닉스 주식회사 반도체 소자의 계면 전하포획 밀도 측정 방법
JP4996856B2 (ja) 2006-01-23 2012-08-08 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
US7595204B2 (en) 2006-03-07 2009-09-29 Sematech, Inc. Methods and systems for determining trapped charge density in films
EP2013948A1 (fr) 2006-04-21 2009-01-14 ETH Zurich Systeme et procede de generation et de detection d'un rayonnement a large bande de l'ordre du terahertz
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US7659979B2 (en) 2006-10-17 2010-02-09 Kla-Tencor Corporation Optical inspection apparatus and method
US7684047B2 (en) 2006-10-27 2010-03-23 Lockheed Martin Corporation Apparatus and method for two wave mixing (TWM) based ultrasonic laser testing
GB0621560D0 (en) * 2006-10-31 2006-12-06 Infinitesima Ltd Probe assembly for a scanning probe microscope
JP5109123B2 (ja) 2007-03-08 2012-12-26 国立大学法人東京工業大学 電界分布又はキャリア分布を高次高調波の強度に基づいて検出する検出装置及びその検出方法
US7830527B2 (en) 2007-04-13 2010-11-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multiple frequency optical mixer and demultiplexer and apparatus for remote sensing
US8525287B2 (en) 2007-04-18 2013-09-03 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US7982944B2 (en) 2007-05-04 2011-07-19 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Method and apparatus for optical frequency comb generation using a monolithic micro-resonator
JP5276347B2 (ja) * 2007-07-03 2013-08-28 国立大学法人 新潟大学 シリコンウェーハ中に存在する原子空孔の定量評価装置、その方法、シリコンウェーハの製造方法、及び薄膜振動子
US9285338B2 (en) 2007-07-19 2016-03-15 University of Pittsburgh—of the Commonwealth System of Higher Education Separation of particles using multiplexed dielectrophoresis
CN101821665B (zh) 2007-07-31 2012-09-19 南京长青激光科技有限责任公司 铁电极板晶畴反转的方法及其应用
US8264693B2 (en) * 2007-12-06 2012-09-11 The Regents Of The University Of Michigan Method and system for measuring at least one property including a magnetic property of a material using pulsed laser sources
US7781739B1 (en) 2008-03-12 2010-08-24 Physical Optics Corporation Quantum-imaging system and mode of operation and method of fabrication thereof
US8009279B2 (en) * 2009-01-12 2011-08-30 Corning Incorporated Characterization of non-linear optical materials using bragg coupling
EP2211343A1 (fr) 2009-01-27 2010-07-28 Thomson Licensing Support d'enregistrement optique à haute densité de données
JP2010190722A (ja) 2009-02-18 2010-09-02 Hitachi High-Technologies Corp 欠陥検査方法及び欠陥検査装置
US20110100323A1 (en) 2009-04-16 2011-05-05 Ethanol Boosting Systems Llc Dimethyl ether (dme) enhanced gasoline engine
US20100272134A1 (en) 2009-04-22 2010-10-28 Blanding Douglass L Rapid Alignment Methods For Optical Packages
KR20130062274A (ko) 2010-03-31 2013-06-12 가부시키가이샤 가네카 구조체, 국재형 표면 플라즈몬 공명 센서용 칩 및 국재형 표면 플라즈몬 공명 센서, 및 이들의 제조 방법
CN201837582U (zh) 2010-10-19 2011-05-18 天津天狮生物发展有限公司 一体化光学臭氧产量检测装置
US8573785B2 (en) 2010-11-23 2013-11-05 Corning Incorporated Wavelength-switched optical systems
WO2012135961A1 (fr) * 2011-04-08 2012-10-11 British Columbia Cancer Agency Branch Appareil et procédés de microscopie multiphotonique
CN102353882B (zh) 2011-06-09 2014-02-19 北京大学 一种半导体器件的栅介质层陷阱密度和位置的测试方法
US8755044B2 (en) * 2011-08-15 2014-06-17 Kla-Tencor Corporation Large particle detection for multi-spot surface scanning inspection systems
US9652729B2 (en) 2011-10-27 2017-05-16 International Business Machines Corporation Metrology management
KR101829676B1 (ko) * 2011-12-29 2018-02-20 삼성전자주식회사 웨이퍼 열 처리 방법
US20130242303A1 (en) * 2012-03-13 2013-09-19 Nanometrics Incorporated Dual angles of incidence and azimuth angles optical metrology
KR20130107818A (ko) * 2012-03-23 2013-10-02 삼성전자주식회사 레이저 간섭계 및 이 레이저 간섭계를 이용한 변위 측정 시스템
JP5925006B2 (ja) 2012-03-26 2016-05-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US9194908B2 (en) 2012-03-28 2015-11-24 Infinitum Solutions, Inc. Metrology for contactless measurement of electrical resistance change in magnetoresistive samples
WO2014012848A1 (fr) 2012-07-17 2014-01-23 École Polytechnique Federale De Lausanne (Epfl) Dispositif et procédé de mesure et d'imagerie de rayonnement diffusé à génération de seconde harmonique
US20160238532A1 (en) * 2013-06-21 2016-08-18 Invenio Imaging Inc. Multi-photon systems and methods
EP2840385A1 (fr) 2013-08-23 2015-02-25 DCG Systems, Inc. Procédé et système de thermographie lock-in permettant de déterminer les paramètres de couche de matériau d'un échantillon
WO2015161136A1 (fr) 2014-04-17 2015-10-22 Femtometrix, Inc. Technologies de métrologie de tranche
CN105092999B (zh) 2014-05-19 2017-12-12 罗克韦尔自动化技术公司 利用多个指示的电力质量事件定位
EP2950338B1 (fr) 2014-05-28 2019-04-24 ams AG Procédé de découpage en dés pour l'encapsulation de puces sur tranches
US10371668B2 (en) 2014-07-11 2019-08-06 Vanderbilt University Apparatus and methods for probing a material as a function of depth using depth-dependent second harmonic generation
WO2016077617A1 (fr) 2014-11-12 2016-05-19 Femtometrix, Inc. Systèmes permettant d'analyser des propriétés matérielles dans des signaux shg
KR102533125B1 (ko) 2015-09-03 2023-05-15 캘리포니아 인스티튜트 오브 테크놀로지 높은-ｋ 유전체를 특징화하는 시스템 및 방법
TWI795596B (zh) 2015-10-05 2023-03-11 加州理工學院 特徵化高介電係數電介質之方法及其光學系統
JP6604629B2 (ja) 2016-02-15 2019-11-13 株式会社Ｓｃｒｅｅｎホールディングス 検査装置及び検査方法
US9554738B1 (en) 2016-03-30 2017-01-31 Zyomed Corp. Spectroscopic tomography systems and methods for noninvasive detection and measurement of analytes using collision computing
CN110300883B (zh) 2016-11-29 2022-05-10 光热光谱股份有限公司 用于增强光热成像和光谱的方法和设备
US10274310B2 (en) 2016-12-22 2019-04-30 The Boeing Company Surface sensing systems and methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy
US10942116B2 (en) 2017-10-09 2021-03-09 Photothermal Spectroscopy Corp. Method and apparatus for enhanced photo-thermal imaging and spectroscopy
US10591526B1 (en) 2018-04-09 2020-03-17 Cadence Design Systems, Inc. Systems and methods to generate a test bench for electrostatic discharge analysis of an integrated circuit design
WO2019210265A1 (fr) 2018-04-27 2019-10-31 Femtometrix, Inc. Systèmes et méthodes de détermination de caractéristiques de dispositifs à semi-conducteurs
WO2019210229A1 (fr) 2018-04-27 2019-10-31 SK Hynix Inc. Métrologie optique non linéaire polarisée par champ utilisant une source de décharge corona
US11946863B2 (en) 2018-05-15 2024-04-02 Femtometrix, Inc. Second Harmonic Generation (SHG) optical inspection system designs

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856159B1 (en) * 1999-03-18 2005-02-15 Vanderbilt University Contactless optical probe for use in semiconductor processing metrology
US20060044641A1 (en) * 1999-03-18 2006-03-02 Vanderbilt University Apparatus and methods of using second harmonic generation as a non-invasive optical probe for interface properties in layered structures

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
RICHARD D. SCHALLER ET AL: "Time-Resolved Second Harmonic Generation Near-Field Scanning Optical Microscopy", CHEMPHYSCHEM - A EUROPEAN JOURNAL OF CHEMICAL PHYSICS & PHYSICALCHEMISTRY., vol. 4, no. 11, 14 November 2003 (2003-11-14), DE, pages 1243 - 1247, XP055230650, ISSN: 1439-4235, DOI: 10.1002/cphc.200300907 *
See also references of WO2015161136A1 *
Z. MARKA ET AL: "Band offsets measured by internal photoemission-induced second-harmonic generation", PHYSICAL REVIEW, B. CONDENSED MATTER., vol. 67, 6 January 2003 (2003-01-06), US, pages 045302 - 1, XP055406975, ISSN: 0163-1829, DOI: 10.1103/PhysRevB.67.045302 *

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US10613131B2 (en) 2020-04-07
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US20220260626A1 (en) 2022-08-18
US20180217192A1 (en) 2018-08-02
US11821911B2 (en) 2023-11-21
US20150330909A1 (en) 2015-11-19
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US20180217193A1 (en) 2018-08-02
US11293965B2 (en) 2022-04-05
US20210055338A1 (en) 2021-02-25
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US12241924B2 (en) 2025-03-04
US20150331029A1 (en) 2015-11-19
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US20220413029A1 (en) 2022-12-29
US20180299497A1 (en) 2018-10-18
US20150331036A1 (en) 2015-11-19
US20150330908A1 (en) 2015-11-19
WO2015161136A1 (fr) 2015-10-22
US11150287B2 (en) 2021-10-19
US11415617B2 (en) 2022-08-16
KR102609862B1 (ko) 2023-12-04
US10663504B2 (en) 2020-05-26
US20250155486A1 (en) 2025-05-15

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