EP3403303A4 - Techniques d'alignement laser utilisées dans des circuits intégrés photoniques - Google Patents

Techniques d'alignement laser utilisées dans des circuits intégrés photoniques Download PDF

Info

Publication number: EP3403303A4
Authority: EP; European Patent Office
Prior art keywords: techniques used; laser alignment; alignment techniques; integrated photonic; photonic circuits
Prior art date: 2016-02-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP17753975.6A

Other languages

German (de)

English (en)

Other versions

EP3403303B1 (fr

EP3403303A1 (fr

Inventor

Roe Hemenway

Cristian Stagarescu

Daniel MEEROVICH

Malcolm R. Green

Wolfgang PARZ

Jichi MA

Richard Robert Grzybowski

Nathan BICKEL

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

MACOM Technology Solutions Holdings Inc

Original Assignee

MACOM Technology Solutions Holdings Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2016-02-19

Filing date

2017-02-17

Publication date

2019-04-03

2017-02-17 Application filed by MACOM Technology Solutions Holdings Inc filed Critical MACOM Technology Solutions Holdings Inc

2017-02-17 Priority to EP18194958.7A priority Critical patent/EP3447556B1/fr

2017-02-17 Priority to EP20163531.5A priority patent/EP3691060B1/fr

2018-11-21 Publication of EP3403303A1 publication Critical patent/EP3403303A1/fr

2019-04-03 Publication of EP3403303A4 publication Critical patent/EP3403303A4/fr

2020-04-22 Application granted granted Critical

2020-04-22 Publication of EP3403303B1 publication Critical patent/EP3403303B1/fr

Status Active legal-status Critical Current

2037-02-17 Anticipated expiration legal-status Critical

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
- G02B6/4232—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using the surface tension of fluid solder to align the elements, e.g. solder bump techniques
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4238—Soldering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
Semiconductor Lasers (AREA)
Optical Couplings Of Light Guides (AREA)
Optical Integrated Circuits (AREA)

EP17753975.6A 2016-02-19 2017-02-17 Techniques d'alignement laser utilisées dans des circuits intégrés photoniques Active EP3403303B1 (fr)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
EP18194958.7A EP3447556B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques
EP20163531.5A EP3691060B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US201662297735P	2016-02-19	2016-02-19
PCT/US2017/018481 WO2017143264A1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser utilisées dans des circuits intégrés photoniques

Related Child Applications (4)

Application Number	Title	Priority Date	Filing Date
EP18194958.7A Division EP3447556B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques
EP18194958.7A Division-Into EP3447556B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques
EP20163531.5A Division EP3691060B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques
EP20163531.5A Division-Into EP3691060B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques

Publications (3)

Publication Number	Publication Date
EP3403303A1 EP3403303A1 (fr)	2018-11-21
EP3403303A4 true EP3403303A4 (fr)	2019-04-03
EP3403303B1 EP3403303B1 (fr)	2020-04-22

Family

ID=59626373

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
EP18194958.7A Active EP3447556B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques
EP17753975.6A Active EP3403303B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser utilisées dans des circuits intégrés photoniques
EP20163531.5A Active EP3691060B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
EP18194958.7A Active EP3447556B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
EP20163531.5A Active EP3691060B1 (fr)	2016-02-19	2017-02-17	Techniques d'alignement laser dans des circuits intégrés photoniques

Country Status (8)

Country	Link
US (3)	US10027087B2 (fr)
EP (3)	EP3447556B1 (fr)
JP (2)	JP7155007B2 (fr)
KR (1)	KR102545749B1 (fr)
CN (2)	CN109075525A (fr)
CA (1)	CA3014585C (fr)
IL (1)	IL261072B (fr)
WO (1)	WO2017143264A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP3447556B1 (fr) *	2016-02-19	2020-04-29	MACOM Technology Solutions Holdings, Inc.	Techniques d'alignement laser dans des circuits intégrés photoniques
US11194092B2 (en)	2018-11-21	2021-12-07	Skorpios Technologies, Inc.	Etched facet in a multi quantum well structure
FR3091932B1 (fr) *	2019-01-22	2021-02-12	St Microelectronics Crolles 2 Sas	Système photonique et son procédé de fabrication
CN110764196B (zh) *	2019-09-09	2020-12-08	浙江大学	用于光纤阵列与平面光波导耦合的无导销可插拔对准结构
WO2021161971A1 (fr) *	2020-02-14	2021-08-19	古河電気工業株式会社	Dispositif optique à semi-conducteur et procédé de fabrication de dispositif optique à semi-conducteur
NL2026563B1 (en) *	2020-09-28	2022-05-30	Photonip B V	Optical assembly
US11888286B2 (en) *	2020-10-21	2024-01-30	Marvell Asia Pte Ltd	Laser chip for flip-chip bonding on silicon photonics chips
TWI786599B (zh) *	2021-04-15	2022-12-11	國立高雄科技大學	角型反射的高速光二極體結構
DE112023000722T5 (de) *	2022-03-15	2024-11-14	Ams-Osram International Gmbh	Laserdioden-bauelement, laserdioden-vorrichtung und verfahren zur herstellung eines laserdioden-bauelements
WO2024184004A1 (fr) *	2023-03-06	2024-09-12	Ams-Osram International Gmbh	Dispositif laser et procédé de fabrication d'un dispositif laser
DE112024000589T5 (de) *	2023-03-22	2025-11-27	Ams-Osram International Gmbh	Optoelektronische halbleitereinheit sowie bauelemente und ein verfahren zu ihrer herstellung
EP4699196A2 (fr) *	2023-04-19	2026-02-25	Dustphotonics	Appareil d'alignement et de support laser
CN116338366B (zh) *	2023-05-29	2023-09-29	中久光电产业有限公司	半导体激光器vbg耦合过程检测设备
WO2025188175A1 (fr) *	2024-03-05	2025-09-12	Fingate Technologies Pte. Ltd.	Laser monomode et procédé d'intégration pour sa fabrication
WO2025186328A1 (fr) *	2024-03-08	2025-09-12	Ams-Osram International Gmbh	Composant optoélectronique et procédé de fabrication d'un composant optoélectronique
DE102024115244A1 (de) *	2024-05-31	2025-12-04	Ams-Osram International Gmbh	Optoelektronische vorrichtung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5488678A (en) *	1993-08-03	1996-01-30	Sharp Kabushiki Kaisha	Assembly structure for an optical integrated circuit device
US5656507A (en) *	1992-01-28	1997-08-12	British Telecommunications Public Limited Company	Process for self-aligning circuit components brought into abutment by surface tension of a molten material and bonding under tension
US5881190A (en) *	1996-05-16	1999-03-09	Bookham Technology Limited	Assembly of an optical component and an optical waveguide
GB2381082A (en) *	2001-10-17	2003-04-23	Marconi Caswell Ltd	Optical waveguide with alignment feature in core layer

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2813780B2 (ja) *	1990-01-08	1998-10-22	日本電信電話株式会社	ハイブリッド型光集積回路
US5023881A (en) *	1990-06-19	1991-06-11	At&T Bell Laboratories	Photonics module and alignment method
JP2762792B2 (ja) *	1991-08-30	1998-06-04	日本電気株式会社	光半導体装置
JP2869279B2 (ja) *	1992-09-16	1999-03-10	三菱電機株式会社	半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
US5376582A (en) *	1993-10-15	1994-12-27	International Business Machines Corporation	Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement
JP3658426B2 (ja) *	1995-01-23	2005-06-08	株式会社日立製作所	光半導体装置
JP3184440B2 (ja) *	1995-02-10	2001-07-09	株式会社リコー	半導体発光装置
US5838703A (en) *	1996-09-30	1998-11-17	Motorola, Inc.	Semiconductor laser package with power monitoring system and optical element
US6327289B1 (en) *	1997-09-02	2001-12-04	Matsushita Electric Industrial Co., Ltd.	Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
JPH11191643A (ja) *	1997-12-25	1999-07-13	Kyocera Corp	チップキャリア及びこれを用いた光素子モジュール
JP2000105322A (ja)	1998-09-29	2000-04-11	Nippon Telegr & Teleph Corp <Ntt>	光部品用実装基板および光部品用実装基板の製造方法
US6214178B1 (en) *	1998-12-22	2001-04-10	Lucent Technologies, Inc.	Focused ion beam formation of angled optoelectronic devices
US6625357B2 (en) *	1999-03-29	2003-09-23	Tyco Electronics Corporation	Method for fabricating fiducials for passive alignment of opto-electronic devices
HK1049705A1 (zh) *	1999-07-16	2003-05-23	Hybrid Micro Technologies Aps	硅板上有源与无源光学部件的混合集成
JP4198867B2 (ja)	2000-06-23	2008-12-17	株式会社東芝	アンテナ装置
JP3884903B2 (ja)	2000-09-01	2007-02-21	日本オプネクスト株式会社	光モジュール、光伝送装置及びその製造方法
JP2002094168A (ja) *	2000-09-19	2002-03-29	Toshiba Corp	半導体レーザ装置及びその製造方法
KR100908623B1 (ko) *	2001-10-30	2009-07-21	호야 코포레이션 유에스에이	광출력의 횡단 전달을 이용하는 광학적 접합 장치 및 방법
US6993053B2 (en) *	2002-04-03	2006-01-31	The Australian National University	Thin clad diode laser
KR100975521B1 (ko) *	2003-10-04	2010-08-12	삼성전자주식회사	발광 소자 조립체
JP3987500B2 (ja) *	2004-02-17	2007-10-10	浜松ホトニクス株式会社	光配線基板および光配線基板の製造方法
KR100637929B1 (ko) *	2004-11-03	2006-10-24	한국전자통신연구원	하이브리드형 광소자
JP2009003096A (ja)	2007-06-20	2009-01-08	Sumitomo Bakelite Co Ltd	光導波路モジュール、光導波路モジュールの製造方法
JP5156502B2 (ja) *	2007-06-26	2013-03-06	パナソニック株式会社	光モジュール
US8168939B2 (en)	2008-07-09	2012-05-01	Luxtera, Inc.	Method and system for a light source assembly supporting direct coupling to an integrated circuit
US8064493B2 (en) *	2009-06-12	2011-11-22	Binoptics Corporation	Surface emitting photonic device
JP2012208147A (ja)	2011-03-29	2012-10-25	Sumitomo Electric Ind Ltd	光電変換モジュール用部品及び光電変換モジュール及び光電変換モジュール用部品の製造方法
CN103378179B (zh)	2012-04-16	2016-08-31	源杰科技股份有限公司	光电元件封装体及可拆卸式封装结构
CN107565374B (zh)	2012-05-08	2020-08-07	镁可微波技术有限公司	具有光束形状修改的激光器
US9830937B1 (en) *	2016-01-22	2017-11-28	Seagate Technology Llc	Horizontal cavity surface emitting laser assembly features for heat assisted magnetic recording
EP3447556B1 (fr) *	2016-02-19	2020-04-29	MACOM Technology Solutions Holdings, Inc.	Techniques d'alignement laser dans des circuits intégrés photoniques
US11616341B2 (en) *	2019-07-24	2023-03-28	Yale University	Systems and methods for chip-scale lasers with low spatial coherence and directional emission

2017
- 2017-02-17 EP EP18194958.7A patent/EP3447556B1/fr active Active
- 2017-02-17 CA CA3014585A patent/CA3014585C/fr active Active
- 2017-02-17 KR KR1020187026725A patent/KR102545749B1/ko active Active
- 2017-02-17 EP EP17753975.6A patent/EP3403303B1/fr active Active
- 2017-02-17 EP EP20163531.5A patent/EP3691060B1/fr active Active
- 2017-02-17 CN CN201780020561.XA patent/CN109075525A/zh active Pending
- 2017-02-17 JP JP2018544056A patent/JP7155007B2/ja active Active
- 2017-02-17 WO PCT/US2017/018481 patent/WO2017143264A1/fr not_active Ceased
- 2017-02-17 CN CN202010111899.XA patent/CN111509555B/zh active Active
- 2017-02-17 US US15/436,474 patent/US10027087B2/en active Active
2018
- 2018-07-16 US US16/036,454 patent/US11658459B2/en active Active
- 2018-08-09 IL IL261072A patent/IL261072B/en unknown
2022
- 2022-10-05 JP JP2022160918A patent/JP7615098B2/ja active Active
2023
- 2023-04-26 US US18/307,362 patent/US20230261432A1/en active Pending

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5656507A (en) *	1992-01-28	1997-08-12	British Telecommunications Public Limited Company	Process for self-aligning circuit components brought into abutment by surface tension of a molten material and bonding under tension
US5488678A (en) *	1993-08-03	1996-01-30	Sharp Kabushiki Kaisha	Assembly structure for an optical integrated circuit device
US5881190A (en) *	1996-05-16	1999-03-09	Bookham Technology Limited	Assembly of an optical component and an optical waveguide
GB2381082A (en) *	2001-10-17	2003-04-23	Marconi Caswell Ltd	Optical waveguide with alignment feature in core layer

Also Published As

Publication number	Publication date
WO2017143264A1 (fr)	2017-08-24
CN111509555A (zh)	2020-08-07
JP2019509635A (ja)	2019-04-04
US20180342851A1 (en)	2018-11-29
US20230261432A1 (en)	2023-08-17
KR102545749B1 (ko)	2023-06-21
CN111509555B (zh)	2024-02-27
IL261072B (en)	2022-03-01
EP3447556A2 (fr)	2019-02-27
EP3691060A1 (fr)	2020-08-05
IL261072A (en)	2018-10-31
EP3403303B1 (fr)	2020-04-22
US11658459B2 (en)	2023-05-23
CN109075525A (zh)	2018-12-21
JP2022189842A (ja)	2022-12-22
CA3014585A1 (fr)	2017-08-24
EP3447556B1 (fr)	2020-04-29
KR20180115289A (ko)	2018-10-22
US10027087B2 (en)	2018-07-17
EP3403303A1 (fr)	2018-11-21
US20170244216A1 (en)	2017-08-24
CA3014585C (fr)	2024-03-19
EP3447556A3 (fr)	2019-03-27
EP3691060B1 (fr)	2021-09-08
JP7615098B2 (ja)	2025-01-16
JP7155007B2 (ja)	2022-10-18

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