EP4133536A4 - Leuchtdiodenstruktur und herstellungsverfahren dafür - Google Patents

Leuchtdiodenstruktur und herstellungsverfahren dafür Download PDF

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Publication number
EP4133536A4
EP4133536A4 EP21784647.6A EP21784647A EP4133536A4 EP 4133536 A4 EP4133536 A4 EP 4133536A4 EP 21784647 A EP21784647 A EP 21784647A EP 4133536 A4 EP4133536 A4 EP 4133536A4
Authority
EP
European Patent Office
Prior art keywords
light
emitting diode
manufacturing methods
diode structure
methods therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21784647.6A
Other languages
English (en)
French (fr)
Other versions
EP4133536A1 (de
Inventor
Wing Cheung CHONG
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raysolve Optoelectronics Suzhou Co Ltd
Original Assignee
Raysolve Optoelectronics Suzhou Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/162,515 external-priority patent/US12224304B2/en
Application filed by Raysolve Optoelectronics Suzhou Co Ltd filed Critical Raysolve Optoelectronics Suzhou Co Ltd
Publication of EP4133536A1 publication Critical patent/EP4133536A1/de
Publication of EP4133536A4 publication Critical patent/EP4133536A4/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
EP21784647.6A 2020-04-09 2021-03-26 Leuchtdiodenstruktur und herstellungsverfahren dafür Pending EP4133536A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063007829P 2020-04-09 2020-04-09
US17/162,515 US12224304B2 (en) 2020-04-09 2021-01-29 Light emitting diode structure with individual fuctionable LED units and method for manufacturing the same
PCT/CN2021/083179 WO2021203987A1 (en) 2020-04-09 2021-03-26 Light emitting diode structure and method for manufacturing thereof

Publications (2)

Publication Number Publication Date
EP4133536A1 EP4133536A1 (de) 2023-02-15
EP4133536A4 true EP4133536A4 (de) 2024-05-08

Family

ID=76333624

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21784647.6A Pending EP4133536A4 (de) 2020-04-09 2021-03-26 Leuchtdiodenstruktur und herstellungsverfahren dafür

Country Status (4)

Country Link
EP (1) EP4133536A4 (de)
JP (2) JP2023525439A (de)
KR (1) KR102911671B1 (de)
CN (1) CN112992964B (de)

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CN114023861A (zh) * 2021-11-01 2022-02-08 镭昱光电科技(苏州)有限公司 Micro-LED芯片结构及其制作方法
CN114497333B (zh) * 2021-12-21 2024-12-17 镭昱光电科技(苏州)有限公司 Micro-LED微显示芯片及其制作方法
CN114784034B (zh) * 2022-02-24 2026-03-20 镭昱光电科技(苏州)有限公司 Micro-LED微显示芯片及其制作方法
CN114566515B (zh) * 2022-02-28 2025-09-12 镭昱光电科技(苏州)有限公司 微型发光二极管显示芯片及其制备方法
CN114628563B (zh) * 2022-05-12 2022-09-09 镭昱光电科技(苏州)有限公司 Micro LED显示芯片及其制备方法
CN114759130B (zh) * 2022-06-15 2022-09-02 镭昱光电科技(苏州)有限公司 一种Micro-LED显示芯片及其制备方法
CN115472641B (zh) 2022-11-01 2023-03-24 镭昱光电科技(苏州)有限公司 一种微显示芯片及其制备方法
CN115498089B (zh) * 2022-11-16 2023-02-17 镭昱光电科技(苏州)有限公司 微显示器件及制备方法
WO2024130132A1 (en) * 2022-12-16 2024-06-20 Lumileds Llc Modular device for addressable light emitting diode arrays
WO2025091231A1 (en) * 2023-10-31 2025-05-08 Jade Bird Display (shanghai) Limited Micro-led array layer and micro-led display panel
WO2025243570A1 (ja) * 2024-05-23 2025-11-27 日亜化学工業株式会社 発光素子の製造方法及び発光素子

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US20180287027A1 (en) * 2017-03-30 2018-10-04 Vuereal Inc. Vertical solid-state devices
US20190164947A1 (en) * 2017-11-24 2019-05-30 Lumens Co., Ltd. Method for fabricating high-efficiency micro-led module

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WO2016122725A1 (en) * 2015-01-30 2016-08-04 Technologies Llc Sxaymiq Micro-light emitting diode with metal side mirror
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US20180287027A1 (en) * 2017-03-30 2018-10-04 Vuereal Inc. Vertical solid-state devices
US20190164947A1 (en) * 2017-11-24 2019-05-30 Lumens Co., Ltd. Method for fabricating high-efficiency micro-led module

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Also Published As

Publication number Publication date
KR102911671B1 (ko) 2026-01-14
KR20220139993A (ko) 2022-10-17
JP2023525439A (ja) 2023-06-16
CN112992964B (zh) 2023-07-07
JP7733147B2 (ja) 2025-09-02
JP2024059811A (ja) 2024-05-01
CN112992964A (zh) 2021-06-18
EP4133536A1 (de) 2023-02-15

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