Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
  • H10F77/147—Shapes of bodies
• • G—PHYSICS
  • G04—HOROLOGY
  • G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
  • G04C10/00—Arrangements of electric power supplies in time-pieces
  • G04C10/02—Arrangements of electric power supplies in time-pieces the power supply being a radioactive or photovoltaic source
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F10/00—Individual photovoltaic cells, e.g. solar cells
  • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
  • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
  • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
  • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
  • H10F19/37—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate comprising means for obtaining partial light transmission through the integrated devices, or the assemblies of multiple devices, e.g. partially transparent thin-film photovoltaic modules for windows
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
  • H10F71/1385—Etching transparent electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/206—Electrodes for devices having potential barriers
  • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
  • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/20—Electrodes
  • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
  • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/40—Optical elements or arrangements
  • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
  • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/52—PV systems with concentrators

Definitions

• This type of solar cell consists, as described in document FR2681189, of an elementary solar cell arranged between a first electrode made of a transparent material and arranged on a transparent substrate, and a second electrode made of opaque metallic material. .
• the invention solves the aforementioned drawbacks by proposing an electronic device comprising a solar cell designed so as to meet the aesthetic requirements of the electronic device in which it is installed, for example a timepiece, while providing a level of electrical energy sufficient to supply the latter, that is to say with a high efficiency.
• the elementary solar cell is adapted to absorb the light radiation, that is to say the light radiation transmitted through the substrate, and to generate an electric voltage from the latter. to terminals of said first and second electrodes.
• the second electrode and the elementary solar cell are perforated by cavities of said solar cell so as to allow the passage of light radiation through said solar cell.
• the elementary solar cell is therefore capable of absorbing a greater quantity of light rays compared to those of the state of the art, which allows a substantial improvement in its efficiency.
• the elementary solar cell consists of three superposed layers made of amorphous silicon and embodying a p-i-n diode.
• the substrate is made of glass, sapphire, or polymer.
• the first and the second electrode are made of conductive transparent oxides, such as zinc oxide or indium-tin oxide.
• the second electrode and the elementary solar cell are perforated by cavities.
• the cavities may have a hexagonal cross section.
• the cross sections of the cavities can alternatively have all sorts of regular or irregular shapes, of simple or complex geometries providing paving of the first electrode.
• the elementary solar cell has a through opening so as to bring the first electrode to the level of the second electrode so as to allow connectivity of the two terminals.
• the dial is formed by the substrate, the solar cell being arranged so that the second electrode faces the crystal.
• Yet another aspect of the invention relates to a method for manufacturing a solar cell, for example in accordance with that described above, comprising the following successive steps:
• the solar cell structuring step makes it possible to generate cavities in the solar cell.
• the first electrode is perforated during the step of structuring the second electrode and the elementary solar cell.
• the first and the second electrode and the elementary solar cell are encapsulated with a transparent material forming a protective envelope.
• the timepiece comprises a case comprising a middle part, an ice cream and a base.
• the case defines an internal volume in which is housed a watch movement comprising the power supply circuit and the aforementioned motor or display means, and optionally a dial.
• the substrate 100 can constitute the crystal of the timepiece.
• the light radiation to which the first face 101 of said substrate 100 is subjected is then incident radiation. It is possible, in particular in this case, that the substrate 100 includes an antireflection treatment on its first surface 101 in order to maximize the amount of light radiation received through said substrate.
• the second electrode 120 and the elementary solar cell 130 are perforated so as to allow the passage, through said solar cell 10, of the transmitted radiation.
• the transmitted radiation can pass through the solar cell 10, the substrate 100 and the first electrode 110 being transparent, and part of this transmitted radiation can be reflected by a reflective element 150 of the electronic device.
• a reflective element 150 of the electronic device is constituted by the dial of the timepiece or by the watch movement.
• the solar cell 10 may comprise a protective envelope (not shown in the figures) made of a transparent material, encapsulating the first and the second electrodes 110 and 120, as well as the elementary solar cell 130.
• This protective envelope makes it possible to protect the solar cell 10 from any attack or external pollution.
• Such a protective envelope can be made of parylene, polyimide, nitrides or oxides.
• the elementary solar cell 130 can therefore absorb part of the radiation transmitted through the crystal and of the radiation reflected by the watch movement.
• the present invention also relates to a method of manufacturing a solar cell, for example in accordance with the solar cell 10 described previously.
• the manufacturing process comprises the following successive steps, represented chronologically respectively by FIGS. 2 to 5 and 1: deposition, on a transparent substrate 100, of a first electrode 110 in the form of a transparent electrically conductive layer, - deposit, on the first electrode 110, of an elementary solar cell 130 adapted to absorb light radiation and to generate an electric current from the latter,
• the structuring step makes it possible to form a plurality of cavities 140 in the solar cell 10.
• the first electrode can also be structured during this structuring step.
• the first and second electrodes 110 and 120 and the elementary solar cell 130 can be encapsulated with a transparent material forming a protective envelope.
• this final step can be carried out using material deposition methods that vary according to the material chosen to constitute the protective envelope.
• the final step can be carried out by a chemical vapor deposition method, if the material of the protective envelope is in parylene, by spin coating, in the case in which the material of the protective envelope is in polyimide, or by plasma-assisted chemical vapor deposition (CVD or ALD) if the material chosen to form the protective envelope is an oxide.
• CVD or ALD plasma-assisted chemical vapor deposition
• deposit the protective envelope by a method of physical vapor deposition, by evaporation or by sputtering, for example in the case where the protective envelope is made of nitrides.
• the step of structuring the second electrode 120 and the elementary solar cell 130 can be carried out in a single operation. This arrangement is made possible thanks to the particular design of the solar cell 10 according to the invention.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Photovoltaic Devices (AREA)
• Electromechanical Clocks (AREA)

Applications Claiming Priority (2)

Publications (1)

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ID=77543407

Family Applications (1)

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• 2022
  • 2022-05-20 US US18/292,160 patent/US20250113649A1/en active Pending
  • 2022-05-20 JP JP2024508964A patent/JP7850246B2/ja active Active
  • 2022-05-20 EP EP22729713.2A patent/EP4396633A1/de active Pending
  • 2022-05-20 WO PCT/EP2022/063792 patent/WO2023030703A1/fr not_active Ceased
  • 2022-05-20 CN CN202280057374.XA patent/CN117836725A/zh active Pending

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