EP4553586A1 - Verfahren zur herstellung einer rückstellfeder mit genauer steifigkeit für einen uhrresonator - Google Patents

Verfahren zur herstellung einer rückstellfeder mit genauer steifigkeit für einen uhrresonator Download PDF

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Publication number
EP4553586A1
EP4553586A1 EP23208599.3A EP23208599A EP4553586A1 EP 4553586 A1 EP4553586 A1 EP 4553586A1 EP 23208599 A EP23208599 A EP 23208599A EP 4553586 A1 EP4553586 A1 EP 4553586A1
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EP
European Patent Office
Prior art keywords
return spring
stiffness
oxide
return
steps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP23208599.3A
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English (en)
French (fr)
Inventor
Frédéric Maier
Jean-Luc Bucaille
Sylvain Jeanneret
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Patek Philippe SA Geneve
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Patek Philippe SA Geneve
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Patek Philippe SA Geneve filed Critical Patek Philippe SA Geneve
Priority to EP23208599.3A priority Critical patent/EP4553586A1/de
Publication of EP4553586A1 publication Critical patent/EP4553586A1/de
Pending legal-status Critical Current

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    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/066—Manufacture of the spiral spring
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/045—Oscillators acting by spring tension with oscillating blade springs
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/20—Compensation of mechanisms for stabilising frequency
    • G04B17/22—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature
    • G04B17/227—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature composition and manufacture of the material used

Definitions

  • the present invention relates to the manufacture of a return spring for a watch resonator.
  • an inertial element oscillates under the action of an escapement that transmits pulses of mechanical energy to it and under the action of a return spring (hairspring or flexible guide of the resonator) that returns it to a position of equilibrium.
  • the balance is carried by a shaft whose pivots rotate in bearings and the hairspring is attached to the shaft by its inner end and to a frame bridge by its outer end.
  • the balance is suspended from a base and guided in rotation by an arrangement of elastic parts (the flexible guide), which also serves as a return spring.
  • the resonator constitutes the time base of a watch movement or mechanism. Together with the escapement, it forms an oscillator.
  • the term "oscillator” is sometimes used to refer to the resonator alone.
  • the present invention relates more particularly to the manufacture of a return spring for a watch resonator by etching a wafer of material. It is now well known in watchmaking to use etching techniques such as deep reactive ion etching (DRIE), chemical etching or laser etching to manufacture watch components in large numbers and precisely. The most common etching material is silicon.
  • DRIE deep reactive ion etching
  • chemical etching chemical etching
  • laser etching laser etching
  • stiffness is one of the two parameters (the other being the moment of inertia of the balance) which determine the frequency of the resonator. It is therefore important to be able to control it as precisely as possible.
  • Another patent, EP 3181939 describes a method for manufacturing a hairspring of precise stiffness according to which a) a hairspring is formed in dimensions smaller than the dimensions necessary to obtain a hairspring of a predetermined stiffness, b) the stiffness of the hairspring formed during step a) is determined by measuring the frequency of the hairspring coupled with a balance wheel having a predetermined inertia, c) the missing material thickness is calculated to obtain the hairspring of a predetermined stiffness and d) material is added to the hairspring formed during step a) to compensate for the missing material thickness.
  • thermoelastic coefficient Young's modulus thermal coefficient, known as CTE
  • CTE Young's modulus thermal coefficient
  • thermal expansion coefficient of the hairspring If one wishes to thermocompensate the resonator, that is to say to make its frequency almost insensitive to thermal variations by for example subjecting the hairspring to thermal oxidation, as proposed by the patents EP 3181938 And EP 3181939 as an additional step of the process, it is necessary to take into account the disturbance caused by step d) on the coefficient thermoelastic and the coefficient of thermal expansion, which complicates the calculations and theoretical study of the hairspring.
  • EP 3416001 relating to a method of manufacturing a flexible frequency-guided resonator
  • EP 3982205 relating to a method of manufacturing a watch spring, in particular flexible guidance or flexible guidance part of a resonator, of precise stiffness
  • EP 4030242 relating to a manufacturing process for spirals of precise stiffness, of the iterative type.
  • the present invention also relates to a watch resonator comprising a return spring manufactured by one of these two methods and a timepiece, for example a watch, comprising such a watch resonator.
  • the present invention is based on the observation that an oxide deposited at low temperature does not modify, or almost does not modify, the thermal characteristics (thermoelastic coefficient and thermal expansion coefficient) of the material on which it is deposited. It is thus possible, with the present invention, to adjust the stiffness of the return spring independently of the thermal compensation, therefore in a simpler and more reliable manner than in the prior art.
  • the return spring for a watch resonator manufactured by the method according to the invention is for example (i) a hairspring 1 as illustrated in Figure 1 , intended to be mounted on the axis of a balance wheel to form with the latter a balance-spring resonator, or (ii) the flexible guidance of a flexible guidance resonator 2 as illustrated in Figure 2 and described in the patent EP 3839651 , flexible guide formed for example by a part 3 comprising two crossed elastic blades 4, 5 and intended to be assembled to the balance 6 of the resonator, or else (iii) a flexible guide part, for example a part 7 (cf.
  • Figure 3 comprising a blade 8 and intended to be assembled head to tail to an identical part to form the flexible guide of a resonator as described in the patent application WO 2022/009102 .
  • the return spring can be a separate part or part of a monolithic part.
  • Formulas (2) to (5) above can be adapted to a hairspring or flexible guide whose blade(s) have a variable section.
  • df is the frequency variation
  • dT is the temperature variation
  • 1 E dE dT is the relative variation of Young's modulus as a function of temperature, i.e. the thermoelastic coefficient (CTE) of the hairspring or flexible guide
  • ⁇ s is the coefficient of thermal expansion of the hairspring or flexible guide, expressed in ppm.°C -1
  • ⁇ b is the coefficient of thermal expansion of the balance wheel, expressed in ppm.°C -1 .
  • thermoelastic coefficient and the coefficient of thermal expansion of the hairspring or flexible guide typically by thermally oxidizing the hairspring or flexible guide when it is made of silicon so that the sign of the thermoelastic coefficient, initially negative, becomes positive so that the term CTE+3 ⁇ s can compensate for the term 2 ⁇ b .
  • the method according to the invention comprises steps E1 to E6 illustrated in Figure 4 .
  • a return spring is formed having the shape of the desired return spring but having dimensions smaller than the dimensions necessary for its stiffness to be equal to a predetermined stiffness (desired stiffness).
  • a predetermined stiffness desired stiffness
  • Step E1 is preferably performed by etching a wafer of material.
  • the etching can be deep reactive ion etching (DRIE), chemical etching, plasma etching, focused ion beam etching (FIB) or laser etching, for example.
  • DRIE deep reactive ion etching
  • FIB focused ion beam etching
  • the material can be homogeneous or composite. It is, for example, based on silicon, quartz, glass (mineral), ceramic (e.g. silicon carbide or silicon nitride), carbon (crystalline or amorphous), metal or alloy.
  • the silicon-based material can be monocrystalline silicon (regardless of its crystal orientation, in particular ⁇ 001 ⁇ or ⁇ 111 ⁇ ), polycrystalline silicon or amorphous silicon. It can be doped or not. The chosen material must, however, have a melting point compatible with step E6 described below. Manufacturing techniques other than etching can be used to form the return spring, such as galvanic growth, chemical vapor deposition growth or additive manufacturing.
  • a second step E2 optional, which can be implemented in particular when the material of the wafer is based on silicon or silicon carbide, the return spring, and more generally the wafer on which it remains attached with the other return springs, is subjected to a thermal oxidation operation followed by a deoxidation operation to attenuate the surface defects of the return spring and increase its mechanical resistance, as proposed for example in the patent EP 3769162 .
  • Thermal oxidation is typically carried out between 600°C and 1300°C, preferably between 800°C and 1200°C, under an oxidizing atmosphere (in an oxidation furnace) comprising water vapor or dioxygen gas.
  • the oxide layer typically silicon dioxide (SiO 2 ), which covers the wafer and in particular the return spring is formed by consuming wafer material, which causes the interface between the wafer material and the oxide to recede.
  • the subsequent deoxidation operation consists of removing the oxide layer, for example by wet etching, vapor etching or dry etching.
  • a third step E3 is implemented when the material of the return spring produced in step E1 cannot, by itself, by its thermoelastic coefficient (CTE) and its thermal expansion coefficient ⁇ s , compensate for the term 2 ⁇ b in formula (7) above because, for example, its thermoelastic coefficient is of negative sign.
  • certain alloys specially designed for thermal compensation have a thermoelastic coefficient of positive sign. In the case therefore of a material with a thermoelastic coefficient of negative sign, it is subjected in step E3 to a thermal compensation operation aimed at modifying the sign of its thermoelastic coefficient.
  • thermal compensation can be implemented to substantially cancel the term CTE+3 ⁇ s , whatever the sign of the initial thermoelastic coefficient of the return spring, when the balance is made of a material with a substantially zero expansion coefficient ⁇ b .
  • the thermal compensation operation may consist of forming on the material a layer having a thermoelastic coefficient of opposite sign to that of said material, for example growing a layer of silicon dioxide by thermal oxidation (as described above) on silicon or silicon carbide constituting the etching material of step E1 or depositing a layer of silicon dioxide on the etching material by chemical or physical vapor deposition (CVD, PVD).
  • the thermal compensation operation may consist of modifying the structure or composition to a predetermined depth of all or part of the surface of the return spring, for example by crystallization (if an amorphous material is used in step E1), doping or diffusion of interstitial or substitution atoms.
  • step E3 the dimensions of the return spring are still smaller than the dimensions necessary to obtain the predetermined stiffness.
  • step E4 the stiffness of the return spring obtained in step E1 is determined, if applicable in step E2 or E3.
  • This determination of stiffness may be direct, i.e. be carried out on the return spring itself, or indirect, i.e. be carried out on one or more other return springs manufactured with said return spring in the pad, for example on one or more other return springs manufactured in the same area of the pad as said return spring or on several other return springs distributed on the pad and the average stiffness of which may be considered representative of all the return springs of the pad.
  • the balance of predetermined inertia can be a balance integrated into a counting machine on the working axis of which the hairspring is mounted.
  • An indirect method of determining the stiffness of the return spring manufactured in step E1 may consist of detaching from the wafer a sample of return springs manufactured with said return spring and determining the average of the stiffnesses of these return springs, said return spring and other return springs manufactured with it in step E1 being left on the wafer for steps E5 and E6 described below.
  • a thickness of oxide to be deposited on the return spring obtained in step E1, where appropriate in step E2 or E3, is calculated so that the stiffness of said return spring is equal to the predetermined stiffness.
  • the thickness or volume of oxide to be deposited may be homogeneous or not on the surface of the return spring.
  • the oxide is preferably silicon dioxide (SiO 2 ), but other oxides may be considered such as germanium, tantalum, zirconium or hafnium oxide.
  • an oxide layer, preferably silicon dioxide, having the thickness calculated in step E5 is deposited on the return spring to give it the predetermined stiffness.
  • the oxide deposition is carried out at low temperature, that is to say at a temperature which remains less than or equal to 500°C, preferably less than or equal to 400°C, preferably less than or equal to 300°C, preferably less than or equal to 200°C, preferably less than or equal to 150°C. Deposited at such temperatures, in fact, the oxides are not sufficiently dense to be able to have an influence on the thermal characteristics.
  • the temperature can vary during the deposition as long as it does not exceed the aforementioned values.
  • This oxide layer is typically deposited by the chemical vapor deposition (CVD) technique. However, it can be deposited by other techniques such as physical vapor deposition (PVD), plasma-enhanced chemical vapor deposition (PECVD), high-density plasma chemical vapor deposition (HDPCVD), molecular vapor deposition (MVD), atomic layer deposition (ALD) or the sol-gel process.
  • PVD physical vapor deposition
  • PECVD plasma-enhanced chemical vapor deposition
  • HDPCVD high-density plasma chemical vapor deposition
  • MVD molecular vapor deposition
  • ALD atomic layer deposition
  • This low-temperature deposited oxide layer not only does not disturb the thermal characteristics of the return spring but also does not modify the properties of the base material, whether monocrystalline, polycrystalline or amorphous.
  • the return spring as well as the other return springs still located in the plate and which have undergone the same treatment as said spring
  • the recall elements are detached from the wafer by breaking or removing the fasteners (formed during the etching of step E1) which held them.
  • FIG. 5 shows a second embodiment of the method according to the invention.
  • This second embodiment differs from the first embodiment in that it is iterative (incremental).
  • the second embodiment implements a step F4 of low-temperature deposition of a predetermined thickness of oxide, preferably silicon dioxide, on the return spring.
  • Step F4 is identical to step E6 of the first embodiment except that the thickness that is deposited is predetermined rather than calculated from the result of a stiffness measurement.
  • the stiffness of the return spring is determined in the same way as in step E4 of the first embodiment.
  • step F6 the method ends, for example by detaching the return spring from the wafer. If the stiffness is not within the predetermined range, the method returns to step F4 for additional low-temperature oxide deposition (to the predetermined thickness) followed by a new stiffness determination (step F5), the loop repeating until the return spring stiffness falls within the predetermined range.
  • the predetermined thickness of oxide deposited at each step F4 is chosen to be small enough that the increase in return spring stiffness it causes is less than the width of the predetermined range, preferably less than half the width of the predetermined range, preferably less than a quarter of the width of the predetermined range.
  • a third embodiment of the method according to the invention consists of forming several return springs in a wafer, according to any one of the methods and any one of the materials described above in relation to step E1, optionally implementing steps E2 and E3 described above on the wafer, determining the stiffness of each of the springs of the wafer, detaching from the wafer the return springs whose stiffness is included in a predetermined range, considered acceptable, leaving the other return springs on the wafer and covering them (in the same way as in step E6) with a layer of oxide, preferably silicon dioxide, deposited at low temperature, i.e.
  • This third embodiment takes up the principle set out in the patent EP 3769161 with the difference that the oxide is deposited at low temperature so as not to modify the thermal characteristics of the return springs.
  • the thickness of the oxide layer can be determined by calculation as a function of the stiffness of said other return springs left on the wafer.
  • the determination of the stiffness of each of the return springs can be direct or indirect, as explained in relation to step E4.
  • the stiffness of each return spring can be determined directly by coupling each of them to a balance of determined inertia and by measuring the frequency of the resonator thus formed, or the stiffness of certain return springs representative of respective zones of the wafer can be determined directly and the stiffness value of the return spring representative of its zone can be assigned to each of the other return springs.
  • the predetermined range is, for example, the second half of the stiffness dispersion range of the return springs manufactured in the wafer during the first step.
  • the oxide layer they receive allows their stiffness to be increased to a value in the second half of said dispersion range.
  • This halves the width of the stiffness dispersion range of the return springs manufactured in the wafer, i.e. the number of classes of these return springs, where each class comprises return springs having substantially the same stiffness.
  • a shorter predetermined range for example the last third, the last quarter, the last fifth, etc., of the stiffness dispersion range of the return springs manufactured in the wafer during the first step, can be chosen, and several iterations can be carried out to divide the number of classes by three, by four, by five, etc.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Micromachines (AREA)
EP23208599.3A 2023-11-08 2023-11-08 Verfahren zur herstellung einer rückstellfeder mit genauer steifigkeit für einen uhrresonator Pending EP4553586A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP23208599.3A EP4553586A1 (de) 2023-11-08 2023-11-08 Verfahren zur herstellung einer rückstellfeder mit genauer steifigkeit für einen uhrresonator

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EP23208599.3A EP4553586A1 (de) 2023-11-08 2023-11-08 Verfahren zur herstellung einer rückstellfeder mit genauer steifigkeit für einen uhrresonator

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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2423764A1 (de) 2010-08-31 2012-02-29 Rolex S.A. Vorrichtung zum Messen des Drehmomentes einer Spirale
EP3002638A2 (de) 2014-09-08 2016-04-06 Richemont International S.A. Herstellungsverfahren einer thermokompensierten spiralfeder
EP3181938A1 (de) 2015-12-18 2017-06-21 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material
EP3181939A1 (de) 2015-12-18 2017-06-21 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch zugabe von material
EP3416001A1 (de) 2017-06-13 2018-12-19 Patek Philippe SA Genève Herstellungsverfahren eines oszillators mit flexiblem zapfen
EP3769161A1 (de) 2018-03-20 2021-01-27 Patek Philippe SA Genève Verfahren zur herstellung von wärmekompensierten uhrhaarfedern mit präziser steifigkeit
EP3769162A1 (de) 2018-03-20 2021-01-27 Patek Philippe SA Genève Verfahren zur herstellung von uhrenherstellungskomponenten aus silicium
EP3839651A1 (de) 2019-12-19 2021-06-23 Patek Philippe SA Genève Mechanischer oszillator einer uhr mit flexibler führung
WO2022009102A1 (fr) 2020-07-10 2022-01-13 Patek Philippe Sa Geneve Oscillateur horloger a pivot flexible
EP3982205A1 (de) 2020-10-06 2022-04-13 Patek Philippe SA Genève Verfahren zur herstellung einer uhrfeder mit einer präzisen steifigkeit
EP4030242A1 (de) 2021-01-18 2022-07-20 Richemont International S.A. Verfahren zur herstellung von uhrwerks-spiralfedern
EP4030243A1 (de) 2021-01-18 2022-07-20 Richemont International S.A. Verfahren zur kontrolle und zur herstellung von uhrwerk-spiralfedern

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2423764A1 (de) 2010-08-31 2012-02-29 Rolex S.A. Vorrichtung zum Messen des Drehmomentes einer Spirale
EP3002638A2 (de) 2014-09-08 2016-04-06 Richemont International S.A. Herstellungsverfahren einer thermokompensierten spiralfeder
EP3181938A1 (de) 2015-12-18 2017-06-21 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material
EP3181939A1 (de) 2015-12-18 2017-06-21 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch zugabe von material
EP3416001A1 (de) 2017-06-13 2018-12-19 Patek Philippe SA Genève Herstellungsverfahren eines oszillators mit flexiblem zapfen
EP3769162A1 (de) 2018-03-20 2021-01-27 Patek Philippe SA Genève Verfahren zur herstellung von uhrenherstellungskomponenten aus silicium
EP3769161A1 (de) 2018-03-20 2021-01-27 Patek Philippe SA Genève Verfahren zur herstellung von wärmekompensierten uhrhaarfedern mit präziser steifigkeit
EP3769161B1 (de) * 2018-03-20 2022-04-13 Patek Philippe SA Genève Herstellungsverfahren von thermokompensierten spiralen mit exakter steifigkeit
EP3839651A1 (de) 2019-12-19 2021-06-23 Patek Philippe SA Genève Mechanischer oszillator einer uhr mit flexibler führung
WO2022009102A1 (fr) 2020-07-10 2022-01-13 Patek Philippe Sa Geneve Oscillateur horloger a pivot flexible
EP3982205A1 (de) 2020-10-06 2022-04-13 Patek Philippe SA Genève Verfahren zur herstellung einer uhrfeder mit einer präzisen steifigkeit
EP4030242A1 (de) 2021-01-18 2022-07-20 Richemont International S.A. Verfahren zur herstellung von uhrwerks-spiralfedern
EP4030243A1 (de) 2021-01-18 2022-07-20 Richemont International S.A. Verfahren zur kontrolle und zur herstellung von uhrwerk-spiralfedern

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