ES2011105A6 - Compact epitaxial reactor - Google Patents

Compact epitaxial reactor

Info

Publication number
ES2011105A6
ES2011105A6 ES8802383A ES8802383A ES2011105A6 ES 2011105 A6 ES2011105 A6 ES 2011105A6 ES 8802383 A ES8802383 A ES 8802383A ES 8802383 A ES8802383 A ES 8802383A ES 2011105 A6 ES2011105 A6 ES 2011105A6
Authority
ES
Spain
Prior art keywords
susceptors
compact
reactor
epitaxial reactor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES8802383A
Other languages
Spanish (es)
Inventor
Lopez Antonio Luque
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUNDACION GENERAL de la UNIVER
Original Assignee
FUNDACION GENERAL de la UNIVER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUNDACION GENERAL de la UNIVER filed Critical FUNDACION GENERAL de la UNIVER
Priority to ES8802383A priority Critical patent/ES2011105A6/en
Publication of ES2011105A6 publication Critical patent/ES2011105A6/en
Expired legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Abstract

The high-capacity reactor for deposition from vapour phase by chemical reaction, pref. for making silicon epitaxias, consists of a group of graphite susceptors in a compact block, heated by an electric current through the susceptors, which are interconnected to form an electrical resistance. The reactant gases are introduced into the individual reaction ducts at chambers between the susceptors, over which the wafers of crystalline material, usually silicon, on which the epitaxia is to be formed are supported in almost vertical position. The reactor assembly is enclosed in a stainless steel chamber, gilded or aluminised internally, which is maintained at a low temp. by suitable cooling.
ES8802383A 1988-07-28 1988-07-28 Compact epitaxial reactor Expired ES2011105A6 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES8802383A ES2011105A6 (en) 1988-07-28 1988-07-28 Compact epitaxial reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES8802383A ES2011105A6 (en) 1988-07-28 1988-07-28 Compact epitaxial reactor

Publications (1)

Publication Number Publication Date
ES2011105A6 true ES2011105A6 (en) 1989-12-16

Family

ID=8257538

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8802383A Expired ES2011105A6 (en) 1988-07-28 1988-07-28 Compact epitaxial reactor

Country Status (1)

Country Link
ES (1) ES2011105A6 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2268974A1 (en) * 2005-06-16 2007-03-16 Universidad Politecnica De Madrid EPITAXIAL REACTOR FOR THE PRODUCTION OF LARGE SCALE OBLEAS.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2268974A1 (en) * 2005-06-16 2007-03-16 Universidad Politecnica De Madrid EPITAXIAL REACTOR FOR THE PRODUCTION OF LARGE SCALE OBLEAS.
WO2006134194A3 (en) * 2005-06-16 2007-04-12 Univ Madrid Politecnica Epitaxial reactor for the large-scale production of wafers
ES2268974B2 (en) * 2005-06-16 2007-12-01 Universidad Politecnica De Madrid EPITAXIAL REACTOR FOR THE PRODUCTION OF LARGE SCALE OBLEAS.
US8435349B2 (en) 2005-06-16 2013-05-07 Universidad Politecnica De Madrid Epitaxial reactor for mass production of wafers

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Legal Events

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FD2A Announcement of lapse in spain

Effective date: 20180802