ES2011105A6 - Reactor epitaxial de susceptores concentrados. - Google Patents
Reactor epitaxial de susceptores concentrados.Info
- Publication number
- ES2011105A6 ES2011105A6 ES8802383A ES8802383A ES2011105A6 ES 2011105 A6 ES2011105 A6 ES 2011105A6 ES 8802383 A ES8802383 A ES 8802383A ES 8802383 A ES8802383 A ES 8802383A ES 2011105 A6 ES2011105 A6 ES 2011105A6
- Authority
- ES
- Spain
- Prior art keywords
- susceptors
- compact
- reactor
- epitaxial reactor
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 239000002178 crystalline material Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
SE DESCRIBE UN REACTOR EPITAXIAL DE GRAN CAPACIDAD PARA DEPOSICION POR REACCION QUIMICA DESDE FASE VAPOR, UTILIZABLE PREFERENTEMENTE PARA FORMACION DE EPITAXIAS DE SILICIO. LA BASE DE ESTA GRAN CAOPACIDAD RADICA EN EL AGRUPAMIENTO DE MULTIPLES SUSCEPTORES DE GRAFITO EN UN BLOQUE COMPACTO QUE SE CALIENTA HACIENDO PASAR CORRIENTE ELECTRICA POR TODOS ELLOS PREVIAMENTE INTERCONECTADOS PARA FORMAR UNA RESISTENCIA ELECTRICA. LOS GASES A REACCIONAR SE INYECTAN ENTRE LOS INTERDUCTOS O CAMARAS INDIVIDUALES DE REACCION FORMADAS ENTRE LOS SUSCRPTORES, SOBRE LOS CUALES, APOYADOS Y EN POSICION CASI VERTICAL, SE SITUAN LAS OBLEAS DE MATERIAL CRISTALINO, GENERALMENTE SILICIO, SOBRE LAS QUE SE FORMARA LA EPITAXIA. EL CONJUNTO DEL REACTOR SE ENCIERRA EN UNA CAMARA DE ACERO INOXIDABLE DORADA O ALUMINIZADA INTERNAMENTE QUE SE MANTIENE A BAJA TEMPERATURA MEDIANTE LA REFRIGERACION ADECUADA.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES8802383A ES2011105A6 (es) | 1988-07-28 | 1988-07-28 | Reactor epitaxial de susceptores concentrados. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES8802383A ES2011105A6 (es) | 1988-07-28 | 1988-07-28 | Reactor epitaxial de susceptores concentrados. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2011105A6 true ES2011105A6 (es) | 1989-12-16 |
Family
ID=8257538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES8802383A Expired ES2011105A6 (es) | 1988-07-28 | 1988-07-28 | Reactor epitaxial de susceptores concentrados. |
Country Status (1)
| Country | Link |
|---|---|
| ES (1) | ES2011105A6 (es) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2268974A1 (es) * | 2005-06-16 | 2007-03-16 | Universidad Politecnica De Madrid | Reactor epitaxial para la produccion de obleas a gran escala. |
-
1988
- 1988-07-28 ES ES8802383A patent/ES2011105A6/es not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2268974A1 (es) * | 2005-06-16 | 2007-03-16 | Universidad Politecnica De Madrid | Reactor epitaxial para la produccion de obleas a gran escala. |
| WO2006134194A3 (es) * | 2005-06-16 | 2007-04-12 | Univ Madrid Politecnica | Reactor epitaxial para la producción de obleas a gran escala |
| ES2268974B2 (es) * | 2005-06-16 | 2007-12-01 | Universidad Politecnica De Madrid | Reactor epitaxial para la produccion de obleas a gran escala. |
| US8435349B2 (en) | 2005-06-16 | 2013-05-07 | Universidad Politecnica De Madrid | Epitaxial reactor for mass production of wafers |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD2A | Announcement of lapse in spain |
Effective date: 20180802 |