ES2011105A6 - Reactor epitaxial de susceptores concentrados. - Google Patents

Reactor epitaxial de susceptores concentrados.

Info

Publication number
ES2011105A6
ES2011105A6 ES8802383A ES8802383A ES2011105A6 ES 2011105 A6 ES2011105 A6 ES 2011105A6 ES 8802383 A ES8802383 A ES 8802383A ES 8802383 A ES8802383 A ES 8802383A ES 2011105 A6 ES2011105 A6 ES 2011105A6
Authority
ES
Spain
Prior art keywords
susceptors
compact
reactor
epitaxial reactor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES8802383A
Other languages
English (en)
Inventor
Lopez Antonio Luque
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUNDACION GENERAL de la UNIVER
Original Assignee
FUNDACION GENERAL de la UNIVER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUNDACION GENERAL de la UNIVER filed Critical FUNDACION GENERAL de la UNIVER
Priority to ES8802383A priority Critical patent/ES2011105A6/es
Publication of ES2011105A6 publication Critical patent/ES2011105A6/es
Expired legal-status Critical Current

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Abstract

SE DESCRIBE UN REACTOR EPITAXIAL DE GRAN CAPACIDAD PARA DEPOSICION POR REACCION QUIMICA DESDE FASE VAPOR, UTILIZABLE PREFERENTEMENTE PARA FORMACION DE EPITAXIAS DE SILICIO. LA BASE DE ESTA GRAN CAOPACIDAD RADICA EN EL AGRUPAMIENTO DE MULTIPLES SUSCEPTORES DE GRAFITO EN UN BLOQUE COMPACTO QUE SE CALIENTA HACIENDO PASAR CORRIENTE ELECTRICA POR TODOS ELLOS PREVIAMENTE INTERCONECTADOS PARA FORMAR UNA RESISTENCIA ELECTRICA. LOS GASES A REACCIONAR SE INYECTAN ENTRE LOS INTERDUCTOS O CAMARAS INDIVIDUALES DE REACCION FORMADAS ENTRE LOS SUSCRPTORES, SOBRE LOS CUALES, APOYADOS Y EN POSICION CASI VERTICAL, SE SITUAN LAS OBLEAS DE MATERIAL CRISTALINO, GENERALMENTE SILICIO, SOBRE LAS QUE SE FORMARA LA EPITAXIA. EL CONJUNTO DEL REACTOR SE ENCIERRA EN UNA CAMARA DE ACERO INOXIDABLE DORADA O ALUMINIZADA INTERNAMENTE QUE SE MANTIENE A BAJA TEMPERATURA MEDIANTE LA REFRIGERACION ADECUADA.
ES8802383A 1988-07-28 1988-07-28 Reactor epitaxial de susceptores concentrados. Expired ES2011105A6 (es)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES8802383A ES2011105A6 (es) 1988-07-28 1988-07-28 Reactor epitaxial de susceptores concentrados.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES8802383A ES2011105A6 (es) 1988-07-28 1988-07-28 Reactor epitaxial de susceptores concentrados.

Publications (1)

Publication Number Publication Date
ES2011105A6 true ES2011105A6 (es) 1989-12-16

Family

ID=8257538

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8802383A Expired ES2011105A6 (es) 1988-07-28 1988-07-28 Reactor epitaxial de susceptores concentrados.

Country Status (1)

Country Link
ES (1) ES2011105A6 (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2268974A1 (es) * 2005-06-16 2007-03-16 Universidad Politecnica De Madrid Reactor epitaxial para la produccion de obleas a gran escala.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2268974A1 (es) * 2005-06-16 2007-03-16 Universidad Politecnica De Madrid Reactor epitaxial para la produccion de obleas a gran escala.
WO2006134194A3 (es) * 2005-06-16 2007-04-12 Univ Madrid Politecnica Reactor epitaxial para la producción de obleas a gran escala
ES2268974B2 (es) * 2005-06-16 2007-12-01 Universidad Politecnica De Madrid Reactor epitaxial para la produccion de obleas a gran escala.
US8435349B2 (en) 2005-06-16 2013-05-07 Universidad Politecnica De Madrid Epitaxial reactor for mass production of wafers

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Effective date: 20180802