ES2015776A6 - Metodo de fabricacion de dispositivos semiconductores. - Google Patents

Metodo de fabricacion de dispositivos semiconductores.

Info

Publication number
ES2015776A6
ES2015776A6 ES8902881A ES8902881A ES2015776A6 ES 2015776 A6 ES2015776 A6 ES 2015776A6 ES 8902881 A ES8902881 A ES 8902881A ES 8902881 A ES8902881 A ES 8902881A ES 2015776 A6 ES2015776 A6 ES 2015776A6
Authority
ES
Spain
Prior art keywords
entities
substrate
composition
reaction
substrate material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES8902881A
Other languages
English (en)
Inventor
Patrick Kent Gallagher
Martin Laurence Green
Roland Albert Levy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES2015776A6 publication Critical patent/ES2015776A6/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

METODO DE FABRICACION DE DISPOSITIVOS SEMICONDUCTORES. COMPRENDE LA ETAPA DE REACCIONAR AL MENOS DOS ENTIDADES REACTIVAS PARA FORMAR UN MATERIAL CONTENIENDO METAL SOBRE UNA REGION O REGIONES DE UN SUSTRATO PROCESADO O SIN PROCESAR. UN HECHO INHERENTE AL METODO ES EL RECONOCIMIENTO DE QUE UNA DE LAS ENTIDADES REACTIVAS REACCIONARA FRECUENTEMENTE CON EL MATERIAL DEL SUSTRATO PARA PRODUCIR RESULTADOS ALTAMENTE INDESEABLES, DESCONOCIDOS CON ANTERIORIDAD, POR EJEMPLO, LA EROSION CASI COMPLETA DE LOS COMPONENTES DE DISPOSITIVOS ANTERIORMENTE FABRICADOS. POR TANTO, SEGUN EL METODO DE LA INVENCION, SE EMPLEA CUALQUIERA DE DIVERSAS TECNICAS PARA REDUCIR LA VELOCIDAD DE REACCION ENTRE EL MATERIAL DEL SUSTRATO Y LA ENTIDAD QUE REACCIONA CON ESTE MATERIAL, AL TIEMPO QUE SE EVITA UNA REDUCCION SUSTANCIAL EN LA VELOCIDAD DE REACCION ENTRE LAS DOS ENTIDADES.
ES8902881A 1988-10-07 1989-08-17 Metodo de fabricacion de dispositivos semiconductores. Expired - Lifetime ES2015776A6 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25499988A 1988-10-07 1988-10-07

Publications (1)

Publication Number Publication Date
ES2015776A6 true ES2015776A6 (es) 1990-09-01

Family

ID=22966407

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8902881A Expired - Lifetime ES2015776A6 (es) 1988-10-07 1989-08-17 Metodo de fabricacion de dispositivos semiconductores.

Country Status (4)

Country Link
EP (1) EP0363065A3 (es)
JP (1) JPH02170425A (es)
KR (1) KR900007056A (es)
ES (1) ES2015776A6 (es)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057925A (ja) * 1983-09-09 1985-04-03 Matsushita Electronics Corp シリコン上へのタングステン膜の形成方法
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
JPS6156412A (ja) * 1984-08-28 1986-03-22 Fujitsu Ltd 半導体装置の製造方法
JPS6250468A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 薄膜のプラズマ気相成長方法
US4766006A (en) * 1986-05-15 1988-08-23 Varian Associates, Inc. Low pressure chemical vapor deposition of metal silicide
JP2592844B2 (ja) * 1987-07-10 1997-03-19 株式会社東芝 高融点金属膜の形成方法

Also Published As

Publication number Publication date
KR900007056A (ko) 1990-05-09
EP0363065A2 (en) 1990-04-11
JPH02170425A (ja) 1990-07-02
EP0363065A3 (en) 1990-07-25

Similar Documents

Publication Publication Date Title
BR7603505A (pt) Processo de fabricacao de um dispositivo semicondutor e dispositivo semicondutor fabricado por este processo
ES8207658A1 (es) Un metodo de fabricacion de una aleacion semiconductora
BR7501870A (pt) Dispositivo semicondutor, processo para a fabricacao de um dispositivo semicondutor
SE7906300L (sv) Framstellningsforfarande
EP0085332A3 (de) Metallisierte Halbleiter und Verfahren zu ihrer Herstellung
IT7826099A0 (it) Processo di fabbricazione di un contatto di tantalio su un substrato semiconduttore di silicio.
KR890004409A (ko) 반도체 소자 화학적 엣칭 방법
SE8604054L (sv) Kiselstalband och sett att tillverka detta
KR870003678A (ko) 고열전도성 세라믹스 기판
BR7600385A (pt) Processo para a producao de um composto organico e composicao a base deste composto
FR2404024A1 (fr) Compositions de polymeres a degradation reglee et leurs applications
FR2517665B1 (fr) Procede de fabrication d'un materiau fritte a base de nitrure de silicium, et materiau obtenu par ce procede
IT7927119A0 (it) Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori.
ES2015776A6 (es) Metodo de fabricacion de dispositivos semiconductores.
KR910007159A (ko) Mos형 반도체장치
FR2293798A1 (fr) Procede pour la fabrication de diamants semi-conducteurs perfectionnes, et diamants ainsi obtenus
ES2006502A6 (es) Procedimiento para fabricar dispositivos y dospositivos fabricados por el mismo
ES2041813T3 (es) Material a base de oxidos metalicos.
KR880009138A (ko) 금속화층이 형성된 질화알루미늄 소결체 및 이의 제조방법
PT95435A (pt) Processo de producao de uma pelicula depositada e de um dispositivo semicondutor
FR2566581B1 (fr) Procede de mise a la masse de dispositifs semi-conducteurs plans et de circuits integres, et produits ainsi obtenus
ES2032623T3 (es) Procedimiento para la fabricacion de aglomerados de vidriado por extrusin, vidriados producidos en base a este procedimiento y piezas vidriadas con estos.
GB1516003A (en) Wafers for use in the manufacture of semiconductor components
FR2109804A5 (en) Alumina ceramic insulators - contg heavy metal oxides and prepd by sinter-sealing shaped powder mixt
KR900005571A (ko) 화합물 반도체장치와 그 제조방법