ES2038012T3 - Mesa elevadora y procedimiento de transporte. - Google Patents

Mesa elevadora y procedimiento de transporte.

Info

Publication number
ES2038012T3
ES2038012T3 ES199090106915T ES90106915T ES2038012T3 ES 2038012 T3 ES2038012 T3 ES 2038012T3 ES 199090106915 T ES199090106915 T ES 199090106915T ES 90106915 T ES90106915 T ES 90106915T ES 2038012 T3 ES2038012 T3 ES 2038012T3
Authority
ES
Spain
Prior art keywords
support
lifting table
disc
slot
bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES199090106915T
Other languages
English (en)
Inventor
Rudolf Wagner
Hans Dr. Hirscher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Application granted granted Critical
Publication of ES2038012T3 publication Critical patent/ES2038012T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/136—Associated with semiconductor wafer handling including wafer orienting means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Jigs For Machine Tools (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Furnace Details (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Forging (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Tunnel Furnaces (AREA)

Abstract

LA MESA ELEVADORA (1) TIENE UN APOYO (5) PARA LA PIEZA A TRABAJAR QUE SUBE Y BAJA Y ES GUIADA EN UNA CARCASA, CON EL CUAL SE PUEDE TRANSPORTAR UNA PIEZA EN FORMA DE DISCO (6) A UNA CAMARA DE TRATAMIENTO (36) DE UNA INSTALACION AL VACIO. PARA PODER CORREGIR LA POSICION DE LA PIEZA (6) PUESTO SOBRE EL APOYO (5) POR UNA MAQUINA, ASI COMO PARA ASEGURAR LA PIEZA DURANTE EL TRANSPORTE SIRVEN ELEMENTOS DE SUJECION (30) QUE SE ENCUENTRAN EN AMBOS LADOS DE LA MESA ELEVADORA (1). ESTOS SE COMPONEN DE UNA BARRA (29) EN EL EXTREMO DE UN SALIENTE (14) QUE ESTA FIJADO EN UN EJE (10) MONTADO EN LA MESA ELEVADORA DE FORMA GIRATORIA QUE SE GIRA DENTRO DE UN CAMPO DE GIRO MEDIANTE UN MOTOR (12) PARA MOVER EL ELEMENTO DE SUJECION EN UNA DE SUS DOS POSIBLES POSICIONES. CON DOS ELEMENTOS DE SUJECION (30) MONTADOS UNO AL LADO DEL OTRO EN UN LADO DE LA MESA Y UN ELEMENTO DE SUJECION MONTADO EN EL LADO OPUESTO DE LA MESA SE PUEDE CORREGIR LA POSICION DE LA PIEZA (6) SOBRE EL APOYO (5). UN DISCO (29) MONTADO EN UN EXTREMO DE CADA BARRA (20) DEL ELEMENTO DE SUJECION (30) SOBREPASA EL BORDE DE LA PIEZA (6) Y LA ASEGURA DURANTE EL TRANSPORTE HACIA ARRIBA. EL ELEMENTO DE SUJECION (30) SE MUEVE HACIA ABAJO MEDIANTE EL MOTOR Y SE COLOCA JUNTO CON EL DISCO (29) DEBAJO DE UNA TAPA (34) CON EL FIN DE PROTEGERLO DE LOS EFECTOS DEL TRATAMIENTO DE SUPERFICIE DE LA PIEZA (6) DENTRO DE LA CAMARA DE PROCESAMIENTO (36). EL APOYO (5) PARA LA PIEZA A TRATAR TIENE UN DISPOSITIVO DE CALENTAMIENTO (50) CON UNA ESPIRAL DE CALEFACCION (56) COLOCADA DENTRO DE UNA PLACA (51) EN UN RANURA (52). POR LA RANURA (52) PASA UN GAS QUE SALE POR PEQUEÑOS AGUJEROS EN LA PLACA (55) QUE CUBRE LA RANURA, PARA FORMAR UN COJIN DE GAS QUE SIRVE COMO CONDUCTOR DE CALOR Y SE OCUPA DE MANTENER UN CALENTAMIENTO O ENFRIAMIENTO UNIFORME DE LA PIEZA A TRATAR.
ES199090106915T 1989-05-08 1990-04-11 Mesa elevadora y procedimiento de transporte. Expired - Lifetime ES2038012T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3915039A DE3915039A1 (de) 1989-05-08 1989-05-08 Hubtisch

Publications (1)

Publication Number Publication Date
ES2038012T3 true ES2038012T3 (es) 1993-07-01

Family

ID=6380264

Family Applications (2)

Application Number Title Priority Date Filing Date
ES199090106915T Expired - Lifetime ES2038012T3 (es) 1989-05-08 1990-04-11 Mesa elevadora y procedimiento de transporte.
ES199090108364T Expired - Lifetime ES2038016T3 (es) 1989-05-08 1990-05-03 Soporte para una pieza en forma de disco asi como camara de proceso en vacio.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES199090108364T Expired - Lifetime ES2038016T3 (es) 1989-05-08 1990-05-03 Soporte para una pieza en forma de disco asi como camara de proceso en vacio.

Country Status (8)

Country Link
US (2) US5051054A (es)
EP (2) EP0396923B1 (es)
JP (2) JPH02308547A (es)
KR (3) KR900017725A (es)
AT (2) ATE85589T1 (es)
DD (2) DD298450A5 (es)
DE (5) DE3943482C2 (es)
ES (2) ES2038012T3 (es)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107499905A (zh) * 2017-09-25 2017-12-22 广州启盈机电设备有限公司 一种定位装置
CN114619080A (zh) * 2020-12-10 2022-06-14 宁波聚士捷机械股份有限公司 一种高精度精密加工用数控雕铣机

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KR900017726A (ko) 1990-12-19
DE59000869D1 (de) 1993-03-25
DD298435A5 (de) 1992-02-20
US5033538A (en) 1991-07-23
US5051054A (en) 1991-09-24
KR0166973B1 (ko) 1999-01-15
DD298450A5 (de) 1992-02-20
EP0397029A2 (de) 1990-11-14
JPH0349839A (ja) 1991-03-04
EP0397029A3 (en) 1990-12-12
EP0396923B1 (de) 1993-02-10
EP0396923A1 (de) 1990-11-14
EP0397029B1 (de) 1993-02-10
DE3915039A1 (de) 1990-11-15
DE3943478A1 (de) 1990-11-15
ATE85589T1 (de) 1993-02-15
JPH02308547A (ja) 1990-12-21
ES2038016T3 (es) 1993-07-01
DE3943482A1 (de) 1990-11-15
KR920701534A (ko) 1992-08-12
KR900017725A (ko) 1990-12-19
DE3943482C2 (de) 1994-07-07
KR0132665B1 (ko) 1998-04-13
DE59000868D1 (de) 1993-03-25
ATE85658T1 (de) 1993-02-15
DE3943478C2 (de) 1995-11-16
JP2918986B2 (ja) 1999-07-12
DE3915039C2 (es) 1992-01-09

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