ES2050945T3 - Laser reflector bragg distribuido para sistemas de comunicaciones con modulacion de frecuencia. - Google Patents

Laser reflector bragg distribuido para sistemas de comunicaciones con modulacion de frecuencia.

Info

Publication number
ES2050945T3
ES2050945T3 ES90300559T ES90300559T ES2050945T3 ES 2050945 T3 ES2050945 T3 ES 2050945T3 ES 90300559 T ES90300559 T ES 90300559T ES 90300559 T ES90300559 T ES 90300559T ES 2050945 T3 ES2050945 T3 ES 2050945T3
Authority
ES
Spain
Prior art keywords
frequency modulation
wave length
communication systems
gain
longer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90300559T
Other languages
English (en)
Inventor
Andrew R Chraplyvy
Thomas L Koch
Robert W Tkach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of ES2050945T3 publication Critical patent/ES2050945T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0618—Details on the linewidth enhancement parameter alpha

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

PARA SUPERAR LOS EFECTOS PERNICIOSOS DE LA RESPUESTA DE MODULACION DE FRECUENCIA EN LASERES SEMICONDUCTORES, DEBIDO A LA INYECCION DE CORRIENTE EN APLICACIONES DE MODULACION DE FRECUENCIA DIRECTA, SE HA DETERMINADO QUE EL FACTOR : DE INCREMENTO DE ANCHURA DE LINEA SE HAGA LO MAYOR POSIBLE. EN UNA REALIZACION, LASERES REFLECTORES BRAGG DISTRIBUIDOS ADECUADOS PARA LOS SISTEMAS DE COMUNICACION DE ONDAS LUMINOSAS POR MODULACION DE FRECUENCIA, ESTAN DISEÑADOS DE MANERA QUE TENGAN UN ELEMENTO DE REALIMENTACION INTEGRADO, TAL COMO UNA REJILLA ONDULADA, CUYO PASO EFECTIVO SE SELECCIONA DE MODO QUE LA LONGITUD DE ONDA DE BRAGG, Y POR LO TANTO LA LONGITUD DE ONDA DE FUNCIONAMIENTO DEL LASER, SEA MAS LARGA QUE LA LONGITUD DE ONDA A SUSTANCIALMENTE LA GANANCIA MAXIMA O CRESTA DE GANANCIA EN LA ESTRUCTURA DEL SEMICONDUCTOR. ES DECIR, LA LONGITUD DE ONDA DE LA REJILLA SE DESINTONIZA EFICAZMENTE HACIA LA LONGITUD DE ONDA MAS LARGA Y EL LADO DE MENOR ENERGIA DE LA CRESTA DEL PERFIL DE GANANCIA. TAL DESINTONIZACION AUMENTA EL FACTOR DE INTENSIFICACION DE LA ANCHURA DE BANDA DE TAL MODO QUE LA RESPUESTA DE MODULACION DE FRECUENCIA NO UNIFORME Y SUS EFECTOS SE REDUCEN AL MINIMO Y EN ALGUNOS CASOS SE ELIMINAN SUSTANCIALMENTE.
ES90300559T 1989-01-27 1990-01-18 Laser reflector bragg distribuido para sistemas de comunicaciones con modulacion de frecuencia. Expired - Lifetime ES2050945T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/303,526 US4905253A (en) 1989-01-27 1989-01-27 Distributed Bragg reflector laser for frequency modulated communication systems

Publications (1)

Publication Number Publication Date
ES2050945T3 true ES2050945T3 (es) 1994-06-01

Family

ID=23172526

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90300559T Expired - Lifetime ES2050945T3 (es) 1989-01-27 1990-01-18 Laser reflector bragg distribuido para sistemas de comunicaciones con modulacion de frecuencia.

Country Status (10)

Country Link
US (1) US4905253A (es)
EP (1) EP0380243B1 (es)
JP (1) JPH0824211B2 (es)
KR (1) KR930002819B1 (es)
CA (1) CA2006681C (es)
DE (1) DE69007813T2 (es)
DK (1) DK0380243T3 (es)
ES (1) ES2050945T3 (es)
HK (1) HK43195A (es)
SG (1) SG116194G (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111475A (en) * 1990-01-02 1992-05-05 At&T Bell Laboratories Analog optical fiber communication system, and laser adapted for use in such a system
US5031188A (en) * 1990-04-30 1991-07-09 At&T Bell Laboratories Inline diplex lightwave transceiver
US5051617A (en) * 1990-06-29 1991-09-24 National Research Council Canada Multilayer semiconductor waveguide device for sum frequency generation from contra-propagating beams
US5091916A (en) * 1990-09-28 1992-02-25 At&T Bell Laboratories Distributed reflector laser having improved side mode suppression
FR2681191A1 (fr) * 1991-09-06 1993-03-12 France Telecom Composant integre laser-modulateur a super-reseau tres couple.
FR2690295B1 (fr) * 1992-04-21 1994-06-03 France Telecom Systeme de transmission optique interactif.
US5384799A (en) * 1993-09-09 1995-01-24 Martin Marietta Corporation Frequency stabilized laser with electronic tunable external cavity
KR0138860B1 (ko) * 1994-12-09 1998-06-01 양승택 초격 회절판 구조의 분배 브락 반사경을 갖는 반도체 레이저
US6359685B1 (en) 1997-02-14 2002-03-19 Jds Uniphase Corporation Apparatus and method for generation of optical signals
US6396801B1 (en) 1998-03-17 2002-05-28 Trw Inc. Arbitrary waveform modem
US6327402B1 (en) 1999-02-04 2001-12-04 Lucent Technologies, Inc. Lightwave transmission system having wide pump wavebands
KR100337704B1 (ko) * 2000-07-04 2002-05-22 윤종용 전계흡수형 변조기가 집적된 레이저 다이오드의 제조 방법
JP4789319B2 (ja) * 2000-11-22 2011-10-12 富士通株式会社 レーザダイオードおよびその製造方法
JP2002198612A (ja) * 2000-12-25 2002-07-12 Nippon Sheet Glass Co Ltd 波長監視装置
US6574260B2 (en) 2001-03-15 2003-06-03 Corning Lasertron Incorporated Electroabsorption modulated laser
US6914925B2 (en) * 2001-08-10 2005-07-05 The Furukawa Electric Co., Ltd. Vertical cavity surface emitting semiconductor laser device
CN1774845B (zh) * 2004-03-23 2010-10-06 日本电信电话株式会社 Dbr型波长可变光源
US20110134957A1 (en) * 2009-12-07 2011-06-09 Emcore Corporation Low Chirp Coherent Light Source
US9306672B2 (en) 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
JP7145877B2 (ja) * 2017-12-15 2022-10-03 株式会社堀場製作所 半導体レーザ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3760292A (en) * 1970-12-22 1973-09-18 Bell Telephone Labor Inc Integrated feedback laser
US3884549A (en) * 1973-04-30 1975-05-20 Univ California Two demensional distributed feedback devices and lasers
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
US4096446A (en) * 1976-02-02 1978-06-20 Bell Telephone Laboratories, Incorporated Distributed feedback devices with perturbations deviating from uniformity for removing mode degeneracy
EP0106305B1 (en) * 1982-10-12 1989-03-15 Nec Corporation Double heterostructure semiconductor laser with periodic structure formed in guide layer
JPS60202974A (ja) * 1983-10-18 1985-10-14 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
US4751710A (en) * 1984-07-26 1988-06-14 Nec Corporation Semiconductor laser device
JPS6147685A (ja) * 1984-08-15 1986-03-08 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
JPS63104492A (ja) * 1986-10-22 1988-05-09 Nec Corp 波長制御分布ブラツグ反射型半導体レ−ザ
JP3805842B2 (ja) * 1996-11-01 2006-08-09 株式会社東芝 携帯形電子機器

Also Published As

Publication number Publication date
JPH0824211B2 (ja) 1996-03-06
JPH02246291A (ja) 1990-10-02
KR930002819B1 (ko) 1993-04-10
EP0380243A3 (en) 1991-06-05
DE69007813D1 (de) 1994-05-11
KR900012391A (ko) 1990-08-04
CA2006681C (en) 1993-05-18
SG116194G (en) 1994-11-25
EP0380243A2 (en) 1990-08-01
DE69007813T2 (de) 1994-07-28
EP0380243B1 (en) 1994-04-06
US4905253A (en) 1990-02-27
HK43195A (en) 1995-03-31
CA2006681A1 (en) 1990-07-27
DK0380243T3 (da) 1994-07-04

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