ES2001941A6 - Un conjunto de laser con una estructura de laser de semiconductores - Google Patents

Un conjunto de laser con una estructura de laser de semiconductores

Info

Publication number
ES2001941A6
ES2001941A6 ES8601670A ES8601670A ES2001941A6 ES 2001941 A6 ES2001941 A6 ES 2001941A6 ES 8601670 A ES8601670 A ES 8601670A ES 8601670 A ES8601670 A ES 8601670A ES 2001941 A6 ES2001941 A6 ES 2001941A6
Authority
ES
Spain
Prior art keywords
laser
wavelength
lmax
semiconductor laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES8601670A
Other languages
English (en)
Inventor
Leslie David Westbrook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of ES2001941A6 publication Critical patent/ES2001941A6/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Radiation-Therapy Devices (AREA)

Abstract

UN COMPUESTO DE LASER CON UNA ESTRUCTURA DE LASER DE SEMICONDUCTORES EN QUE SU ANCHURA DE LINEA DE EMISION PUEDE REDUCIRSE HACIENDOLO FUNCIONAR A UNA LONGITUD DE ONDA MENOR QUE LA LONGITUD DE ONDA DE GANANCIA MAXIMA A LA CORRIENTE UMBRAL, LMAX. ESTE CONJUNTO COMPRENDE UN LASER DE GUIA DE ONDAS TABICADA PROVISTO DE UNA REJILLA DE DIFRACCION DE RETROALIMENTACION DISTRIBUIDA (DFB), 9. EL PERIODO DE LA REJILLA DE REFRACCION, 9, SE SELECCIONA PARA DAR AL LASER UNA LONGITUD DE ONDA DE EMISION PREDETERMINADA QUE ES MAS CORTA QUE LMAX. LA INVENCION ENCUENTRA APLICACION EN COMUNICACIONES OPTICAS, PARTICULARMENTE EN SISTEMAS COHERENTES.
ES8601670A 1985-09-09 1986-09-05 Un conjunto de laser con una estructura de laser de semiconductores Expired ES2001941A6 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB858522308A GB8522308D0 (en) 1985-09-09 1985-09-09 Semiconductor lasers

Publications (1)

Publication Number Publication Date
ES2001941A6 true ES2001941A6 (es) 1988-07-01

Family

ID=10584913

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8601670A Expired ES2001941A6 (es) 1985-09-09 1986-09-05 Un conjunto de laser con una estructura de laser de semiconductores

Country Status (9)

Country Link
US (1) US4754459A (es)
EP (1) EP0218344B1 (es)
JP (1) JPH0744308B2 (es)
AT (1) ATE96252T1 (es)
CA (1) CA1265604A (es)
DE (1) DE3689188T2 (es)
ES (1) ES2001941A6 (es)
GB (1) GB8522308D0 (es)
HK (1) HK135396A (es)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257783A (ja) * 1986-04-30 1987-11-10 Sharp Corp 半導体レ−ザ素子
FR2605801B1 (fr) * 1986-10-23 1989-03-03 Menigaux Louis Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu
GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
US5119393A (en) * 1989-06-14 1992-06-02 Hitachi, Ltd. Semiconductor laser device capable of controlling wavelength shift
US5317588A (en) * 1992-11-05 1994-05-31 Eastman Kodak Company Ridge waveguide distributed-feedback laser diode with a depressed-index cladding layer
US5305340A (en) * 1992-12-16 1994-04-19 International Business Machines Corporation Waveguide ridge laser device with improved mounting and ridge protection
US6330265B1 (en) * 1998-04-21 2001-12-11 Kabushiki Kaisha Toshiba Optical functional element and transmission device
EP1343232B1 (en) * 2002-03-08 2007-05-02 nanoplus GmbH Nanosystems and Technologies A semiconductor laser array with a lattice structure
TWI225723B (en) * 2002-04-12 2004-12-21 Univ Nat Taiwan Two-pole different width multi-layered semiconductor quantum well laser with carrier redistribution to modulate light-emission wavelength
US7613401B2 (en) * 2002-12-03 2009-11-03 Finisar Corporation Optical FM source based on intra-cavity phase and amplitude modulation in lasers
US8792531B2 (en) 2003-02-25 2014-07-29 Finisar Corporation Optical beam steering for tunable laser applications
WO2008080171A1 (en) * 2006-12-22 2008-07-03 Finisar Corporation Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element
US7941057B2 (en) * 2006-12-28 2011-05-10 Finisar Corporation Integral phase rule for reducing dispersion errors in an adiabatically chirped amplitude modulated signal
US8131157B2 (en) 2007-01-22 2012-03-06 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
WO2008097928A1 (en) * 2007-02-02 2008-08-14 Finisar Corporation Temperature stabilizing packaging for optoelectronic components in a transmitter module
US8027593B2 (en) 2007-02-08 2011-09-27 Finisar Corporation Slow chirp compensation for enhanced signal bandwidth and transmission performances in directly modulated lasers
US7991291B2 (en) * 2007-02-08 2011-08-02 Finisar Corporation WDM PON based on DML
JP4312239B2 (ja) * 2007-02-16 2009-08-12 富士通株式会社 光素子及びその製造方法
US7991297B2 (en) 2007-04-06 2011-08-02 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US8204386B2 (en) 2007-04-06 2012-06-19 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US8160455B2 (en) * 2008-01-22 2012-04-17 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US8260150B2 (en) 2008-04-25 2012-09-04 Finisar Corporation Passive wave division multiplexed transmitter having a directly modulated laser array
US8199785B2 (en) * 2009-06-30 2012-06-12 Finisar Corporation Thermal chirp compensation in a chirp managed laser
DE102009054592A1 (de) * 2009-12-14 2011-06-16 Dr. Johannes Heidenhain Gmbh Positionsmesseinrichtung

Also Published As

Publication number Publication date
CA1265604A (en) 1990-02-06
JPH0744308B2 (ja) 1995-05-15
DE3689188D1 (de) 1993-11-25
EP0218344B1 (en) 1993-10-20
US4754459A (en) 1988-06-28
JPS6261387A (ja) 1987-03-18
ATE96252T1 (de) 1993-11-15
GB8522308D0 (en) 1985-10-16
EP0218344A1 (en) 1987-04-15
DE3689188T2 (de) 1994-03-03
HK135396A (en) 1996-08-02

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Legal Events

Date Code Title Description
SA6 Expiration date (snapshot 920101)

Free format text: 2006-09-05

FD1A Patent lapsed

Effective date: 20060906