ES2056003T3 - Laser semiconductor de doble canal y su procedimiento de realizacion. - Google Patents

Laser semiconductor de doble canal y su procedimiento de realizacion.

Info

Publication number
ES2056003T3
ES2056003T3 ES92111883T ES92111883T ES2056003T3 ES 2056003 T3 ES2056003 T3 ES 2056003T3 ES 92111883 T ES92111883 T ES 92111883T ES 92111883 T ES92111883 T ES 92111883T ES 2056003 T3 ES2056003 T3 ES 2056003T3
Authority
ES
Spain
Prior art keywords
realization
procedure
semiconductor laser
channel semiconductor
double channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92111883T
Other languages
English (en)
Inventor
Francois Brillouet
Patrick Garabedian
Leon Goldstein
Philippe Pagnod-Rossiaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Nokia Inc
Original Assignee
Alcatel CIT SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA, Nokia Inc filed Critical Alcatel CIT SA
Application granted granted Critical
Publication of ES2056003T3 publication Critical patent/ES2056003T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

LA CORRIENTE DE ALIMENTACION DE UN LASER DE FOSFURO DE INDIO O ARSENIURO DE GALIO ESTA CONFINADO EN UNA CINTA LASER (14A) POR DOS MEDIOS. UN MEDIO DE BLOQUEO DE CORRIENTE CERCANA Y CONSTITUIDO POR UNA UNION BLOQUEANTE (JB) FORMADA EN DOS CANALES LATERALES (CL) QUE DELIMITAN ESTA CINTA. UN MEDIO DE BLOQUEO DE CORRIENTE ALEJADA ESTA CONSTITUIDA POR UNA CAPA SEMIAISLANTE (24) IMPURIFICADA CON HIERRO Y DEPOSITADA EPITAXIALMENTE ANTES DEL GRABADO DE LOS CANALES LATERALES. LA INVENCION SE APLICA PARTICULARMENTE EN LA REALIZACION DE LOS LASERES DE BOMBEO UTILIZADOS EN LOS AMPLIFICADORES OPTICOS DE LAS CONEXIONES DE FIBRAS OPTICAS.
ES92111883T 1991-07-19 1992-07-13 Laser semiconductor de doble canal y su procedimiento de realizacion. Expired - Lifetime ES2056003T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9109178A FR2679388B1 (fr) 1991-07-19 1991-07-19 Laser semi-conducteur a double canal et son procede de realisation.

Publications (1)

Publication Number Publication Date
ES2056003T3 true ES2056003T3 (es) 1994-09-01

Family

ID=9415336

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92111883T Expired - Lifetime ES2056003T3 (es) 1991-07-19 1992-07-13 Laser semiconductor de doble canal y su procedimiento de realizacion.

Country Status (8)

Country Link
US (1) US5278858A (es)
EP (1) EP0523587B1 (es)
JP (1) JPH07114309B2 (es)
AT (1) ATE106169T1 (es)
CA (1) CA2073885C (es)
DE (1) DE69200147T2 (es)
ES (1) ES2056003T3 (es)
FR (1) FR2679388B1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0639875A1 (en) * 1993-07-12 1995-02-22 BRITISH TELECOMMUNICATIONS public limited company Electrical barrier structure for semiconductor device
JPH07288361A (ja) * 1994-04-18 1995-10-31 Nec Kansai Ltd 半導体レーザ及びその製造方法
KR970054972A (ko) * 1995-12-29 1997-07-31 김주용 레이저 다이오드 제조방법
US5956360A (en) * 1997-03-28 1999-09-21 Lucent Technologies Inc. Uncooled lasers with reduced low bias capacitance effect
JP2003060309A (ja) * 2001-08-21 2003-02-28 Sumitomo Electric Ind Ltd 半導体レーザ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110085A (ja) * 1981-12-23 1983-06-30 Nec Corp 埋め込み形半導体レ−ザ
JPS59125684A (ja) * 1983-01-06 1984-07-20 Nec Corp 埋め込み形半導体レ−ザ
NL8401172A (nl) * 1984-04-12 1985-11-01 Philips Nv Halfgeleiderlaser.
JPS6346790A (ja) * 1986-08-15 1988-02-27 Nec Corp 埋込み型半導体レ−ザおよびその製造方法
NL8603009A (nl) * 1986-11-27 1988-06-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
JPH0666526B2 (ja) * 1988-07-28 1994-08-24 関西日本電気株式会社 半導体レーザダイオードとその製造方法
US4947400A (en) * 1989-06-26 1990-08-07 At&T Bell Laboratories Laser-photodetector assemblage
JPH03203282A (ja) * 1989-12-29 1991-09-04 Nec Kansai Ltd 半導体レーザダイオード

Also Published As

Publication number Publication date
EP0523587A1 (fr) 1993-01-20
DE69200147T2 (de) 1994-09-08
CA2073885C (fr) 1996-07-30
EP0523587B1 (fr) 1994-05-25
JPH05206576A (ja) 1993-08-13
JPH07114309B2 (ja) 1995-12-06
DE69200147D1 (de) 1994-06-30
CA2073885A1 (fr) 1993-01-20
ATE106169T1 (de) 1994-06-15
FR2679388B1 (fr) 1995-02-10
US5278858A (en) 1994-01-11
FR2679388A1 (fr) 1993-01-22

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