ATE106169T1 - Doppelkanal-halbleiterlaser und sein herstellungsverfahren. - Google Patents

Doppelkanal-halbleiterlaser und sein herstellungsverfahren.

Info

Publication number: ATE106169T1
Authority: AT; Austria
Prior art keywords: manufacturing process; semiconductor laser; dual channel; channel semiconductor; stripe
Prior art date: 1991-07-19

Application number

AT92111883T

Other languages

English (en)

Inventor

Francois Brillouet

Patrick Garabedian

Leon Goldstein

Philippe Pagnod-Rossiaux

Original Assignee

Cit Alcatel

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-07-19

Filing date

1992-07-13

Publication date

1994-06-15

1992-07-13 Application filed by Cit Alcatel filed Critical Cit Alcatel

1994-06-15 Application granted granted Critical

1994-06-15 Publication of ATE106169T1 publication Critical patent/ATE106169T1/de

Links

238000004519 manufacturing process Methods 0.000 title abstract 2
230000009977 dual effect Effects 0.000 title 1
239000004065 semiconductor Substances 0.000 title 1
230000000903 blocking effect Effects 0.000 abstract 3
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
238000005530 etching Methods 0.000 abstract 1
239000000835 fiber Substances 0.000 abstract 1
230000003287 optical effect Effects 0.000 abstract 1
238000005086 pumping Methods 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

Physics & Mathematics (AREA)
Geometry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

AT92111883T 1991-07-19 1992-07-13 Doppelkanal-halbleiterlaser und sein herstellungsverfahren. ATE106169T1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR9109178A FR2679388B1 (fr)	1991-07-19	1991-07-19	Laser semi-conducteur a double canal et son procede de realisation.

Publications (1)

Publication Number	Publication Date
ATE106169T1 true ATE106169T1 (de)	1994-06-15

Family

ID=9415336

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT92111883T ATE106169T1 (de)	1991-07-19	1992-07-13	Doppelkanal-halbleiterlaser und sein herstellungsverfahren.

Country Status (8)

Country	Link
US (1)	US5278858A (de)
EP (1)	EP0523587B1 (de)
JP (1)	JPH07114309B2 (de)
AT (1)	ATE106169T1 (de)
CA (1)	CA2073885C (de)
DE (1)	DE69200147T2 (de)
ES (1)	ES2056003T3 (de)
FR (1)	FR2679388B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0639875A1 (de) *	1993-07-12	1995-02-22	BRITISH TELECOMMUNICATIONS public limited company	Elektrische Sperrstruktur für Halbleiter-Vorrichtung
JPH07288361A (ja) *	1994-04-18	1995-10-31	Nec Kansai Ltd	半導体レーザ及びその製造方法
KR970054972A (ko) *	1995-12-29	1997-07-31	김주용	레이저 다이오드 제조방법
US5956360A (en) *	1997-03-28	1999-09-21	Lucent Technologies Inc.	Uncooled lasers with reduced low bias capacitance effect
JP2003060309A (ja) *	2001-08-21	2003-02-28	Sumitomo Electric Ind Ltd	半導体レーザ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58110085A (ja) *	1981-12-23	1983-06-30	Nec Corp	埋め込み形半導体レ−ザ
JPS59125684A (ja) *	1983-01-06	1984-07-20	Nec Corp	埋め込み形半導体レ−ザ
NL8401172A (nl) *	1984-04-12	1985-11-01	Philips Nv	Halfgeleiderlaser.
JPS6346790A (ja) *	1986-08-15	1988-02-27	Nec Corp	埋込み型半導体レ−ザおよびその製造方法
NL8603009A (nl) *	1986-11-27	1988-06-16	Philips Nv	Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
JPH0666526B2 (ja) *	1988-07-28	1994-08-24	関西日本電気株式会社	半導体レーザダイオードとその製造方法
US4947400A (en) *	1989-06-26	1990-08-07	At&T Bell Laboratories	Laser-photodetector assemblage
JPH03203282A (ja) *	1989-12-29	1991-09-04	Nec Kansai Ltd	半導体レーザダイオード

1991
- 1991-07-19 FR FR9109178A patent/FR2679388B1/fr not_active Expired - Fee Related
1992
- 1992-07-13 AT AT92111883T patent/ATE106169T1/de not_active IP Right Cessation
- 1992-07-13 ES ES92111883T patent/ES2056003T3/es not_active Expired - Lifetime
- 1992-07-13 EP EP92111883A patent/EP0523587B1/de not_active Expired - Lifetime
- 1992-07-13 DE DE69200147T patent/DE69200147T2/de not_active Expired - Fee Related
- 1992-07-15 CA CA002073885A patent/CA2073885C/fr not_active Expired - Fee Related
- 1992-07-17 JP JP4191153A patent/JPH07114309B2/ja not_active Expired - Fee Related
- 1992-07-20 US US07/915,512 patent/US5278858A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0523587A1 (de)	1993-01-20
DE69200147D1 (de)	1994-06-30
DE69200147T2 (de)	1994-09-08
FR2679388A1 (fr)	1993-01-22
FR2679388B1 (fr)	1995-02-10
US5278858A (en)	1994-01-11
JPH07114309B2 (ja)	1995-12-06
JPH05206576A (ja)	1993-08-13
ES2056003T3 (es)	1994-09-01
EP0523587B1 (de)	1994-05-25
CA2073885A1 (fr)	1993-01-20
CA2073885C (fr)	1996-07-30

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Legal Events

Date	Code	Title	Description
1995-02-15	UEP	Publication of translation of european patent specification
2002-04-15	REN	Ceased due to non-payment of the annual fee