ATE143175T1 - Dünnschicht-halbleiterbauelement - Google Patents

Dünnschicht-halbleiterbauelement

Info

Publication number
ATE143175T1
ATE143175T1 AT91302640T AT91302640T ATE143175T1 AT E143175 T1 ATE143175 T1 AT E143175T1 AT 91302640 T AT91302640 T AT 91302640T AT 91302640 T AT91302640 T AT 91302640T AT E143175 T1 ATE143175 T1 AT E143175T1
Authority
AT
Austria
Prior art keywords
thin film
film semiconductor
semiconductor component
layer
ohmic
Prior art date
Application number
AT91302640T
Other languages
English (en)
Inventor
Shinichi Takeda
Masato Yamanobe
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2078401A external-priority patent/JPH03278469A/ja
Priority claimed from JP2078402A external-priority patent/JPH03278470A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE143175T1 publication Critical patent/ATE143175T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
AT91302640T 1990-03-27 1991-03-26 Dünnschicht-halbleiterbauelement ATE143175T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2078401A JPH03278469A (ja) 1990-03-27 1990-03-27 薄膜半導体装置
JP2078402A JPH03278470A (ja) 1990-03-27 1990-03-27 薄膜半導体装置

Publications (1)

Publication Number Publication Date
ATE143175T1 true ATE143175T1 (de) 1996-10-15

Family

ID=26419477

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91302640T ATE143175T1 (de) 1990-03-27 1991-03-26 Dünnschicht-halbleiterbauelement

Country Status (4)

Country Link
US (1) US5150181A (de)
EP (1) EP0449585B1 (de)
AT (1) ATE143175T1 (de)
DE (1) DE69122148T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69117785T2 (de) * 1990-03-27 1997-02-06 Canon Kk Dünnschicht-Halbleiterbauelement
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
JP3348531B2 (ja) * 1994-07-08 2002-11-20 ソニー株式会社 薄膜トランジスタの水素化方法および薄膜トランジスタの形成方法
JPH09270519A (ja) * 1996-03-31 1997-10-14 Furontetsuku:Kk 薄膜トランジスタの製造方法
JP3082679B2 (ja) * 1996-08-29 2000-08-28 日本電気株式会社 薄膜トランジスタおよびその製造方法
KR100537376B1 (ko) * 1998-12-16 2006-03-14 엘지.필립스 엘시디 주식회사 박막트랜지스터 광센서의 제조방법
KR100776514B1 (ko) * 2000-12-30 2007-11-16 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
KR20070059559A (ko) * 2005-12-07 2007-06-12 삼성전자주식회사 표시 장치 및 그 제조 방법
KR20110081694A (ko) * 2010-01-08 2011-07-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 표시 장치의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
US4441113A (en) * 1981-02-13 1984-04-03 Energy Conversion Devices, Inc. P-Type semiconductor material having a wide band gap
JPS5961964A (ja) * 1982-10-01 1984-04-09 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH0614560B2 (ja) * 1983-03-11 1994-02-23 キヤノン株式会社 フォトセンサ
JPS60101940A (ja) * 1983-11-07 1985-06-06 Ricoh Co Ltd イメ−ジセンサ
JPS6129170A (ja) * 1984-07-19 1986-02-10 Canon Inc フオトセンサ及びその製造法
JPS6213274A (ja) * 1985-07-11 1987-01-22 Honda Motor Co Ltd 自動シ−ム溶接装置における軌道修正方法及び軌道修正装置
JPH06104370B2 (ja) * 1985-07-12 1994-12-21 キヤノン株式会社 記録装置
JPS639157A (ja) * 1986-06-30 1988-01-14 Canon Inc 薄膜トランジスタの製造方法
JPH0668484B2 (ja) * 1985-09-25 1994-08-31 株式会社神戸製鋼所 ステンレス被覆管の超音波探傷方法
JPH0740711B2 (ja) * 1986-06-20 1995-05-01 キヤノン株式会社 光センサの駆動方法及び画像入力装置
JPH01137674A (ja) * 1987-11-25 1989-05-30 Matsushita Electric Ind Co Ltd 薄膜トランジスタ

Also Published As

Publication number Publication date
DE69122148D1 (de) 1996-10-24
US5150181A (en) 1992-09-22
EP0449585B1 (de) 1996-09-18
DE69122148T2 (de) 1997-02-06
EP0449585A1 (de) 1991-10-02

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